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BDV64B Datasheet

Part Manufacturer Description PDF Type
BDV64B Bourns PNP SILICON POWER DARLINGTONS Original
BDV64B Motorola Complementary Silicon Plastic Power Darlingtons Original
BDV64B On Semiconductor TRANS DARLINGTON BJT PNP 100V 10A 3TO-218 Original
BDV64B On Semiconductor DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS Original
BDV64B On Semiconductor BDV64 - TRANSISTOR 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218, PLASTIC, CASE 340D-02, 3 PIN, BIP General Purpose Power Original
BDV64B Power Innovations PNP SILICON POWER DARLINGTONS Original
BDV64B Mospec POWER TRANSISTORS(12A,125W) Scan
BDV64B Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDV64B Motorola European Master Selection Guide 1986 Scan
BDV64B N/A Shortform Transistor PDF Datasheet Scan
BDV64B N/A Transistor Replacements Scan
BDV64B N/A Cross Reference Datasheet Scan
BDV64B N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDV64B N/A Shortform Transistor Datasheet Guide Scan
BDV64B N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDV64B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan
BDV64B STMicroelectronics Shortform Data Book 1988 Scan
BDV64B Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDV64B Transys Electronics Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-218, 3-Pin Scan
BDV64BF Philips Semiconductors PNP Silicon Darlington Power Transistor Original
Showing first 20 results.

BDV64B

Catalog Datasheet MFG & Type PDF Document Tags

BDV64B

Abstract: Bdv64a BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , voltage ( lE = 0) BDV64A BDV64B BDV64C BDV64 Collector-em itter voltage ( lB = 0) BDV64A BDV64B BDV64C Em , not necessarily include testing of all parameters. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER , -120 TYP MAX UNIT breakdown voltage -30 mA lB = 0 (see Note 4) BDV64A BDV64B , -40 V -50 V -60 V -5 V lB = 0 CD II o BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Tc
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BDV65 BDV65A BDV65B BDV65C

BDV64

Abstract: BDV64A BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , V IB = 0 BDV64A -2 cut-off current VCB = -50 V IB = 0 BDV64B -2 V VCB
Bourns
Original
TCS145AD TCS145AE TCS145AF TIS140AA

BDV64B

Abstract: BDV64C BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , ) BDV64A BDV64B BDV64C VCEO VC80 SY M BO L VALUE -60 -80 -100 -120 -60 -80 -100 -120 V EBO ·c >CM !b Ptot , not necessaruy irusuoe testing or ait parameters. fj BDV64, BDV64A, BDV64B, BDV64C PNP SILICON , (BR)CEO MIN -60 -80 -100 -120 BDV64A BDV64B BDV64C BDV64 BDV64A B0V64B BDV64C BDV64 BDV64A B0V64B BDV64C BOV64 BOV64A BDV64B BDV64C TYP MAX UNIT ic = -30 mA ¡B - 0 , _, . . (see Note 4
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8DV64B

transistor K 1413

Abstract: Y182 i BDV64; 64A _ I l BDV64B; 64C PHILIPS , 5,5 -0 ,4 ± 0 ,0 5 - 1,6 7 Z 96696 April 1988 629 BDV64; 64A BDV64B; 64C PHILIPS C , transistors BDV64;. 64A BDV64B; 64C 5bE ] ) 711Gfi2b DD433MM lbT T- 33- 31 hFE hFE hFE ~ V BE - v , . October 1985 631 BDV64; 64A BDV64B: 64C PHILIPS L SbE D INTERNATIONAL 7 110 a2b , BDV64; 64A BDV64B; 64C SbE J > 711005b 004334b T31 * P H I N T -3 3 -3 1 PHILIPS INTERNATIONAL
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transistor K 1413 Y182 transistors BDV64B 0D43342 T-33-31 7Z78130 0DM3347 7Z82768

BDV64

Abstract: transistors BDV64B CONDITIONS DUC ICON BDV64 SEM E -80 Open emitter ANG INCH BDV64B V -100 , BDV64B Emitter-base voltage -100 BDV64C VEBO UNIT -60 BDV64A Collector-base voltage , -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat TYP. -120 IC=-5A ,IB=-20mA -2.0 , Collector cut-off current ICBO BDV64A BDV64B BDV64C ICEO VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 SEM E ANG CH IN BDV64B BDV64C mA -0.4 -2.0 -0.4 -2.0 TOR
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BDV64/64A/64B/64C BDV65/65A/65B/65C

TIS140

Abstract: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , (unless otherwise noted) RATING BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B BDV64 SYMBOL VALUE , 150°C free air temperature at the rate of 28 mW/°C. E T E L O S B O BDV64C BDV64A BDV64B VCEO , 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60
Bourns
Original
TIS140

BDV64

Abstract: BDV64A G füAffSYS BDV64, BDV64A, BDV64B, BDV64C fUGTRONICS pNp SILICON POWER DARLINGTONS LIMITED â , = 0) BDV64 BDV64A BDV64B BDV64C VCBO -60 -80 -100 -120 V Collector-emitter voltage (lB = 0) BDV64 BDV64A BDV64B BDV64C VCEO -60 -80 -100 -120 V Emitter-base voltage VEBO -5 V Continuous collector , air temperature at the rate of 28 mW/°C. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER , lB = 0 (see Note 4) BDV64A BDV64B BDV64C -80 -100 -120 V VCB = -30 V lB = 0 BDV64 -2 'ceo
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BDV64

Abstract: BDV64B BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , V IB = 0 BDV64A -2 cut-off current VCB = -50 V IB = 0 BDV64B -2 V VCB
Bourns
Original
BDV65, BDV64
Abstract: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , Collector-base voltage (IE = 0) BDV64A BDV64B BDV64C BDV64 Collector-emitter voltage (IB = 0) BDV64A BDV64B , SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60 , °C TC = 150°C TC = 150°C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B Bourns
Original

BDV64

Abstract: BDV65A BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , (unless otherwise noted) RATING SYMBOL BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B VCBO BDV64C Collector-emitter voltage (IB = 0) BDV64B UNIT -60 -80 -100 V -120 , , BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical , MAX -80 BDV64B -100 BDV64A -2 cut-off current V CB = -50 V IB = 0 BDV64B
Power Innovations
Original

BDV64

Abstract: transistors BDV64B Collector-base voltage -80 Open emitter V BDV64B -100 BDV64C -120 BDV64 -60 BDV64A VCEO Collector-emitter voltage -80 Open base V BDV64B Emitter-base voltage -100 , MIN VBE BDV64A V BDV64B -100 -120 Collector-emitter saturation voltage IC , =150 VCB=-120V, IE=0 VCB=-60V, IE=0;TC=150 -0.4 -2.0 Collector cut-off current BDV64A BDV64B , =0 BDV64B -0.4 -2.0 VCE=-30V, IB=0 VCE=-50V, IB=0 BDV64C ICEO UNIT -80 IC=-30mA, IB
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bdv64b transistor

Abstract: ic 7493  BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors , Mounting instructions and Accessories. 7Z9669S April 1988 657 BDV64; 64A BDV64B; 64C ^ CIRCUIT , BDV64B; 64C CHARACTERISTICS Tj = 25 °C unless otherwise specified. D.C. current gain* -lc = 1 A , ; 64A BDV64B; 64C v cc V|M" T 7Z78130 ~VIM = 16,5 V -vCc = 16 V VBB = 6,5 V R1 = 56 n R2 = , circuit. 660 October 1980 Silicon Darlington power transistors BDV64; 64A BDV64B; 64C Fig. 5 Safe
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bdv64b transistor ic 7493 7Z77491 7Z664A6
Abstract: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors , instructions and Accessories. Y April 1988 b bS3^31 00347fifc> 53b 629 BDV64; 64A BDV64B; 64C , 0 3 4 7 5 7 472 ka mA mA mA BDV64; 64A BDV64B; 64C Silicon Darlington power , 7 r October 1985 631 BDV64; 64A BDV64B; 64C 16,5 V 16 V 6,5 V 56 O 4ion 560 n , =] E4S BDV64; 64A BDV64B; 64C Silicon Darlington power transistors 7 V Fig. 5 Safe -
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S3T31 Q0347TE

transistors BDV64B

Abstract: BDV64 VCBO Collector-base voltage BDV64A VALUE -60 Open emitter -80 BDV64B Collector-emitter voltage -120 BDV64 -60 BDV64A Open base -80 BDV64B Emitter-base voltage , MIN MAX UNIT -60 BDV64A -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat , =-30V, IE=0;TC=150 -0.4 -2.0 BDV64A VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 -0.4 -2.0 BDV64B , -2.0 BDV64 VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 BDV64B VCE=-50V, IB=0 BDV64C
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64b diode

transistors BDV64B

Abstract: BDV65BG BDV65B(NPN), BDV64B(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output , PNP COLLECTOR 2,4 BASE 1 BASE 1 EMITTER 3 BDV65B EMITTER 3 BDV64B THERMAL , 1 Publication Order Number: BDV65B/D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TO , ORDERING INFORMATION Device Order Number BDV65BG BDV64BG BDV65BG BDV64BG Package Type TO-218 (Pb-Free) TO , Vdc Vdc BDV65B (NPN), BDV64B (PNP) http://onsemi.com 3 BDV65B (NPN), BDV64B (PNP) NPN 10K
ON Semiconductor
Original
all number npn pnp transistor pin out data npn power amplifier circuit
Abstract: plem entary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in , TEMPERATURE (°C) Figure 1. Power Derating REV 8 MOTOROLA >M otorola, Inc. 1996 BDV65B BDV64B , hFE , D CURRENT GAIN C BDV65B BDV64B 0.1 1 10 0.1 1 Figure 2. DC Current Gain , TC = 25°C * \ \ : -BONDING WIRE LIMIT s nv A , BDV65B, BDV64B , Device Data 3 (NORMALIZED) r(t), TRANSIENT THERMAL RESISTANCE BDV65B BDV64B t, TIME (ms -
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340D-02

BDV64

Abstract: transistors BDV64B BDV64; 64A BDV64B; 64C PHILIPS INTERNATIONAL SbE D â  711002b 0043342 31L «PHIN T , BDV64B; 64C \ PHILIPS INTERNATIONAL CIRCUIT DIAGRAM SbE T> ?110aSb DDM33M3 255 BIPHIN Tâ , ;- 64A BDV64B; 64C 711002b 0043344 lbT IPHIN -16 v hFE hFE hFE -VBE "vCEsat Cc fhfe VF Vf Tâ , This Material Copyrighted By Its Respective Manufacturer BDV64; 64A BDV64B: 64C philips international , Silicon Darlington power transistors PHILIPS INTERNATIONAL 10 -le (A) BDV64; 64A BDV64B: 64C 5bE D
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philips BDV64A BDV64 C bdv64s T-33-3 7Z36696 7Z7749I-
Abstract: BDV65Bâ'‰(NPN), BDV64Bâ'‰(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as , BDV64B SOTâ'93 (TOâ'218) CASE 340D 1 2 3 TOâ'247 CASE 340L STYLE 3 NOTE: Effective , . 14 1 Publication Order Number: BDV65B/D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TOâ , '218 (Pbâ'Free) 30 Units / Rail BDV64BG TOâ'218 (Pbâ'Free) 30 Units / Rail BDV65BG TOâ'247 (Pbâ'Free) 30 Units / Rail BDV64BG TOâ'247 (Pbâ'Free) 30 Units / Rail Device Order Number ON Semiconductor
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BDV64B

Abstract: BDV65B ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. · , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V , BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B, BDV64B 10 , Response http://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE
ON Semiconductor
Original

transistors BDV64B

Abstract: bdv64b transistor Resistors BDV65B PNP BDV64B DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 6 0 -8 0 , Data BDV65B BDV64B ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter , Power Transistor Device Data 3-209 BDV65B BDV64B PNP hpE. D C CURRENT GAIN IC, COLLECTOR , Operating Area 3-210 Motorola Bipolar Power Transistor Device Data BDV65B BDV64B r(t), TRANSIENT
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340D-01
Showing first 20 results.