500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BDT61C Supplier : - Manufacturer : ComSIT Stock : 45 Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

BDT61B Datasheet

Part Manufacturer Description PDF Type
BDT61B Bourns NPN SILICON POWER DARLINGTONS Original
BDT61B Philips Semiconductors Silicon Darlington Power Transistor Original
BDT61B Power Innovations NPN SILICON POWER DARLINGTONS Original
BDT61B Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDT61B N/A Shortform Transistor PDF Datasheet Scan
BDT61B N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDT61B N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDT61B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan
BDT61BF Philips Semiconductors Silicon Darlington Power Transistor Original
BDT61BF N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDT61BF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDT61BF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan
BDT61B-S Bourns NPN DARLINGTON 100V 4A Original

BDT61B

Catalog Datasheet MFG & Type PDF Document Tags

BDT60C

Abstract: BDT61A BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDT61B V CBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 BDT61 BDT61A VALUE 60 BDT61A BDT61B VCEO 80 100 V 120 BDT61C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B, BDT61C , 0.5 cut-off current VCE = 50 V IB = 0 BDT61B 0.5 V VCE = 60 V 0.2 Collector
Bourns
Original
BDT60 BDT60A BDT60B BDT60C TCS110AB TCS110AC

sas110

Abstract: BDT60 BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , BDT61B VALUE VCBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 60 BDT61A BDT61B VCEO BDT61C 80 100 V 120 V EBO 5 V , , BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical , MAX 80 BDT61B 100 BDT61A 0.5 cut-off current V CE = 50 V IB = 0 BDT61B
Power Innovations
Original
sas110 750-AT-1

BDT61

Abstract: BDT60C BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDT61B V CBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 BDT61 BDT61A VALUE 60 BDT61A BDT61B VCEO 80 100 V 120 BDT61C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B, BDT61C , 0.5 cut-off current VCE = 50 V IB = 0 BDT61B 0.5 V VCE = 60 V 0.2 Collector
Bourns
Original

dg43550

Abstract: BDT61 BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE D I SILICON DARLINGTON POWER TRANSISTORS , -1991 507 This Material Copyrighted By Its Respective Manufacturer BDT61;61A BDT61B;61C j \ PHILIPS , =3V BDT61;61A BDT61B;61C 711002b 0043222 bl7 PHIN IM 0 â'" ru T- -33-2 9 'CBO < 0,2 mA 'CBO < 0,5 , BDT61;61A BDT61B:61C PHILIPS INTERNATIONAL CHARACTERISTICS (continued) Diode, forward voltage lF= 1,5 , BDT61B;61C 711Gfl2L, 00M322M 4tT*PHIN T-33-2^ 7Z82S58 m ip= 0,1 ms 10 100 d.c. : BDT61 BDT61A
-
OCR Scan
QGM3221 dg43550 diagram DARLINGTON DG43550 X-33-2 B2565 7Z82099
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , 80 100 BDT61C 60 BDT61A BDT61B V CEO BDT61C Emitter-base voltage V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 E T E L O S B O BDT61B VALUE , BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case , BDT61B 100 BDT61C Collector-emitter TYP 120 V ICEO IC = 30 mA IB = 0 VCE = Bourns
Original
SAS110AB TIS110AA

5BE1

Abstract: Darlington NPN Silicon Diode BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ] > I 711002(3 0 0 4 3 5 5 0 Ö44 » P H I N , August-1991 507 BDT61;61A BDT61B;61C / \ PHILIPS INTERNATIONAL SbE T > 711065b , power transistors BDT61;61A BDT61B;61C 5bE J > 711002b 0043222 bl7 P H I N ~ T- - 3 3 - 2 9 'CBO , %. " V August' 1988 509 - BDT61;61A BDT61B:61C PHILIPS INTERNATIONAL CHARACTERISTICS , BDT61;61A BDT61B;61C 5bE D 711002b 0043224 4^T T -3 3 -2 9 PHILIPS INTERNATIONAL PHIN Fig. 6
-
OCR Scan
5BE1 Darlington NPN Silicon Diode Q0M322S G04B527 B2097
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , ) BDT61A BDT61B VALUE 60 V CBO 80 100 BDT61C 60 BDT61A BDT61B V CEO BDT61C , 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B, BDT61C NPN , current VCE = 50 V IB = 0 BDT61B 0.5 V VCE = 60 V 0.2 Collector cut-off VCB = , IE = 0 TC = 150°C BDT61A 2.0 IE = 0 TC = 150°C BDT61B 2.0 VCB = 60 V VEC Bourns
Original

BDT618

Abstract: BDT60C ST BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , otherwise noted) RATING SYM BOL VALUE UNIT CoJlector-base voilage (lE = 0) 8DT61 BDT61A BDT61B BDT61C 0DT61 BDT61A BDT61B BDT61C VCEO VCBO 60 80 100 120 60 80 100 120 V EBO V CoHector-emitter , include testing of all parameters. INNOVATIONS P 3-31 BDT61, BDT61 A, BDT61B, BDT61C NPN , )CEO breakdown voftage !c = 30 mA i8 =0 (see Note 3) BDT61 BDT81A BDT61B BDT61C BDT61
-
OCR Scan
BDT618 BDT60C ST BOT61 3DT61
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , noted) RATING BDT61 Collector-base voltage ( lE = 0) BDT61A BDT61B BDT61C BDT61 Collector-em itter voltage ( lB = 0) BDT61A BDT61B BDT61C Em itter-base voltage Continuous collector current Continuous base , , BDT61B, BDT61C NPN SILICON POWER DARLINGTONS AUG UST 1993 - REVISED MARCH 1997 electrical , = 0 (see Note 3) BDT61A BDT61B BDT61C V > 30 V 40 V 50 V 60 V 60 V 80 V 100 V 120 V -
OCR Scan
T0-220
Abstract: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS G Designed for Complementary Use , voltage (IE = 0) BDT61A BDT61B VALUE 60 V CBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 BDT61A BDT61B VCEO 80 100 V 120 BDT61C VEBO , , BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case , cut-off current VCE = 50 V IB = 0 BDT61B 0.5 breakdown voltage V VCE = 60 V IB = 0 -
Original
Abstract: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS , 0034b75 fl?T August 1991 507 BDT61;61A BDT61B;61C R1 typ. 6 kSl R2 typ. 1 0 0 « Fig. 2 , 0D34b7b 70b mA BDT61;61A BDT61B;61C Silicon Darlington power transistors CHARACTERISTICS Tj , < 300 ps; S < 2%. ) ^^33^31 0D34b?7 b4S ( August 1988 509 BDT61;61A BDT61B;61C , circuit. 510 Y March 1986 bbSBTBl 00341=76 SfiS i- BDT61;61A BDT61B;61C Silicon -
OCR Scan
003MLAQ S3T31 7Z82097

BDT61

Abstract: transistor BD 512 BDT61;61A BDT61B;61C A SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors , '¢0.6 -«-2_4 MSA0S0 - I ^August 1991507 ^53^31 0034b75 Ã"7T BDT61.61A BDT61B;61C RI typ. 6 kSÏ R2 typ , Darlington power transistors BDT61;61A BDT61B;61C CHARACTERISTICS Tj = 25 °C unless otherwise , Manufacturer BDT61.61A BDT61B;61C CHARACTERISTICS (continued) Diode, forward voltage IF = 1.5A vF < 2 V lF , Respective Manufacturer BDT61;61A BDT61B;61C â  'CMmax -Iô = O.OII- 7 -1 'Cma
-
OCR Scan
IEC134 transistor BD 512 1FC15 7Z82565 53T31 7ZS2099

philips BDV64A

Abstract: BDX67 1.5A/6mA _ BDT61 BDT61A BDT61B BDT61C BDT60 BDT60A BDT60B BDT60C TO-220AB 4A
-
OCR Scan
BDX67 philips BDV64A TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

philips BDV64A

Abstract: T1P121 N AflER PHILIPS/DISCRETE ESE D â  ^53131 DOlbEl? h H Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS (in order of current rating) TYPE PACKAGE OUTLINE 'C(DC)O) VCEO MINIMUM hps at Ig VCE(Mt) MAX. atices to«(typ-)at NPN PNP TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 TO-220AB 2A 60V 80V 100V 1000 at 1A and 500 at 2A 2.5V at 2A/8mA BD675 BD677 BD679 BD681 BD683 BD676 BD678 BD680 BD682 BD684 TO-126 4A 45V 60V 80V 100V 120 V 750 al 1.5A 2.5V at 1.5A/6mA BDT61 BDT61A BDT61B BDT61C
-
OCR Scan
BDT63A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR 2a 100v NPN TIP120 TIP121 TIP122 TIP125 TIP126 TIP127

TCS-11

Abstract: BDT60 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE
Bourns
Original
TCS-11 TCS115AB TCS115AC SAS115AB

T2D 22 diode

Abstract: T2D 56 DIODE BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA BDT60 A B -VC BO max. 60 80 100 120 V ~ v CEO max. 60 80 100 120 V C Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) - 'c
-
OCR Scan
T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode A060-1
Abstract: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is currently available, but not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 Bourns
Original

dg432

Abstract: BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE T > 711002b 00432G4 bTl HIPHIN T- 33- ? ( SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. Q U ICK R E F E R E N C E D A T A BDT60 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) Collector current (peak value) Total power
-
OCR Scan
dg432 MSA060-1 GQ432D5 DDM32Q7 7Z78130 DG4320 0043S10

BDT60

Abstract: BDT60B BDT60;60A BDT60B;60C SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA BDT60 a b C Collector-base voltage (open emitter) -vcbo max. 60 80 100 120 v Collector-emitter voltage (open base) ~vCEO max. 60 80 100 120 v Collector current (d.c.) -
-
OCR Scan
transistor d 1991 ar transistor 2TH kia 494 MSA060 7Z82561 7Z88218 7Z82564
Abstract: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature Bourns
Original

LC1 DT60

Abstract: BDT60 BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE D â  TiioflEb 00143204 tu «PHIN T- 33- ?( SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA BDT60 A B C Collector-base voltage (open emitter) ~vCBO max. 60 80 100 120 V Collector-emitter voltage (open base) -vCEO max. 60 80 100 120 V Collector current
-
OCR Scan
LC1 DT60 z825 0D43205 T-33-31

BDT60C

Abstract: BDT60 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK q AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE (TOP VIEW) q 50 W at 25°C Case Temperature q 4 A Continuous Collector Current B 1 q Minimum hFE of 750 at 1.5 V, 3 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case
Power Innovations
Original

BDT60C ST

Abstract: BDT60C BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright® 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 · · · · Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum of 750 at 1.5 V, 3 A B C T0-220 P A C KA G E (TOP VIEW) cc Pin 2 is fn electrical contact wfth the mounting base. MDTRACA a b so lu te m axim um ra tin gs at 25°C c a se
-
OCR Scan
150CC

BDT60C

Abstract: BDT60 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE
Bourns
Original
Showing first 20 results.