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Part : BDS16VC470M10TP10�10 Supplier : Samyoung Electronics Manufacturer : Chip One Exchange Stock : 16,970 Best Price : - Price Each : -
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BDS16VC470M10TP10�10

Catalog Datasheet MFG & Type PDF Document Tags

mt3514

Abstract: KBPC606 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600
Sensitron Semiconductor
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mt3514 KBPC606 mt2502 KBU1006 Sensitron Semiconductor b40c3700 MP1500 B40C800 B80C800 B125C800 B250C800 B380C800 B500C800

GFM 64A

Abstract: GDV 64A 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0
Micro Commercial Components
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GFM 64A GDV 64A GFM 85A 625 GFG 79mcc GFr 58A DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12

mb101

Abstract: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0
Micro Commercial Components
Original
mb101 MB05M MB10M DB101 DB102 HDB103G HDB104G
Abstract: -8 RG1676-9 RG1676-10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Electrocube
Original
RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6

SR1K-2

Abstract: SR1K2 CECC 42 000 203 10/00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10,0 40 5,0 40 5,0 40 10,0 40 10,0 40 10,0 58 58 58 58 58 58 58 5,0 10,0 5,0 5,0 5,0 10,0 10,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10/00 SIOV Metal Oxide
EPCOS
Original
SR1K-2 SR1K2 capacitor K460 SR2S14 Z5U Metal Oxide Varistor 155Z SHCVSR1S14BM474X SR2S14BM474X SR1S14BM105Z SR1S14BM

CL31A106KOHNNN

Abstract: CL10B105KA8NNN 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering
Samsung Electro-Mechanics
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CL31A106KOHNNN CL10B105KA8NNN CL21F105ZBFNNN CL21F105ZAFNNN CL21F105ZOFNNN CL21F225ZAFNNN CL21F225ZOFNNN CL21F475ZQFNNN

SMAJ15CA

Abstract: SMAJ24CA with a 10/1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10/1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600
EIC Semiconductor
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SMAJ15CA SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA 188CA DO-214AC UL94V-O SMAJ188CA SMAJ78CA SMAJ85A

SMCJ10C

Abstract: SMCJ10CA * * * * * 0.305(7.75) 0.030(0.76) * 1500W peak pulse power capability with a 10/1000µs waveform , unless otherwise specified. Rating Symbol Peak Pulse Power Dissipation on 10/1000ms waveform Peak Pulse Current on 10/1000µs waveform (1) (2) (1) Typical thermal resistance , Junction to , (V) Maximum Reverse Leakage @ VWM IR (µA) SMCJ5.0C 6.40 7.82 10 5.0 2000 156.3 SMCJ5.0CA 6.40 7.25 10 5.0 2000 163.0 9.2 SMCJ6.0C 6.67 8.15
EIC Semiconductor
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SMCJ10C SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA DO-214AB SMCJ160CA SMCJ170C SMCJ170CA SMCJ188C SMCJ188CA

TO-32-070

Abstract: 2SA1678 50 50 50 50 50 50 50 50 50 Vebo (V) 10 10 10 10 10 10 6 6 10 10 10 10 5 6 5 5 10 6 6 6 6 5 5 5 5 6 6 6 10 10 10 10 5 6 (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 500 , 250 250 250 250 250 250 200 250 200 250 200 250 200 250 Vce (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 0 10 1 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Ic te (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
-
OCR Scan
TO-32-070 2SA1678 2SJ193 2SK1413 Application Notes FC124 2sb631k T0220ML

BCR141

Abstract: BCR141F 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current , = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off , Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz , 10 2 10 3 - 10 2 IC h FE mA 10 1 10 1 10 0 -1 10 10 0 10 1
Infineon Technologies
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BCR141 BCR141F BCR141L3 BCR141S BCR141T BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174

1Nu5

Abstract: IN418 75 125 50 55 25 70 23 23 90 100 75 60 75 75 75 100 90 100 100 100 100 100 125 20 25 10 1,0 1.0 1.0 1.0 1.0 5 5 7.5 4 3 50 30 10 100 6 10 10 10 25 3 1.0 1.0 1.5 1.5 1.0 5 25 12.7 12.8 3 5 6 35 1000 3 3 10 iö 1.0 1.0 1.0 1.0 1.0 410 1500 500 800 200 50 50 100 50 20 1.0 1.0 1.0 1.0 1.0 5 2.5 5 25 5 80 1500 150 100 10 20 50 50 50 10 1.0 1.0 1.0 1.0 1.0 5 5 4 5 15 7 800 500 500 300 10 iso 150 150 30 1.0 l.Q 1.0 1.0 1.0 15 3.6 4 5 5 300 300 500 800 600 30 75 75 100
-
OCR Scan
1N34A 1N3592 1Nu5 IN418 1Ns4 IN270 1N42 UN309 1N55B 1N70A 1N98A 1N777 11N781
Abstract: Power : 600 W FEATURES : * 600W peak pulse power capability with a 10/1000µs waveform * Excellent , Peak Pulse Power Dissipation on 10/1000μs waveform Peak Pulse Current on 10/1000μs waveform (1 , 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 , 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2 EIC Semiconductor
Original
TH97/2478 TH09/2479 TH07/1033 DO-214AA UL94V-0 SMBJ188A

marking 74s

Abstract: BAS170W - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA , rf - 34 - - - 100 ps Forward voltage matching1) VF IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz , = f = 10 kHz BAS 70W/BAS 170W 2.0 CT f = 1MHz (VR) EHB00044 pF (IF
Infineon Technologies
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BAS70 BAS170W BAS70-02L BAS70-02W BAS70-04 BAS70-04T marking 74s BAS70-04S
Abstract: ) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 750 880 1000 - - 20 , ) #3;#2; IF = 10 mA VF AC Characteristics Diode capacitance pF VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time #2; IF = 25 mA 1 rr VF is the , . / BAS170W Forward resistance rf = f = 10 kHz BAS 70W/BAS 170W 2.0 CT #4; f = 1MHz (VR Infineon Technologies
Original
BAS70-04W BAS70-06 BAS70-06W BAS70-05 BAS70-05W BAS70-07

BGY 602

Abstract: BD 882 capability with a 10/1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 250oC/10 seconds at terminals Mechanical Data Case: JEDEC DO-214AB(SMC , unless otherwise specified.) Parameter Symbol Peak pulse current with a 10/1000us waveform (1) Unit P PPM Peak pulse power dissipation with a 10/1000us waveform (1) (2) Value Minimum 1500 , . Max. Test current at IT (mA) SMCJ5.0 GDD BD D 6.40 7.82 10 5.0 1000
Good-Ark
Original
BGY 602 BD 882 KD 605 447 gev GHG 432 SMCJ10 440CA MIL-STD-750 SMCJ150 SMCJ150A SMCJ160 SMCJ160A

CL21B105K

Abstract: CL05A105K Size Code 05 10 EIA Code 0402 0603 L 1.00±0.05 1.60±0.10 1.60±0.10 2.00±0.10 2.00±0.10 2.00±0.10 , . High Capacitance Table (X5R) Capacitance () Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 15 47 100 220 High Capacitance Table_Low Profile (X5R) Size(mm) Tmax (mm) Capacitance () Vr(V) 6.3 0402(1005) 0.3 10 16 6.3 10 0603(1608) 0.5 16 25 10 0.7 16 25 0805(2012) 4 6.3 0.95
Samsung Electro-Mechanics
Original
CL21B105K CL05A105K CL05A225 CL21B475K CL32B106K CL21B225K

BCR191

Abstract: BCR191F voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 , - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0,5 mA , Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V
Infineon Technologies
Original
BCR191 BCR191S BCR191F BCR191L3 BCR191T BCR191W BCR191/F/L3 BCR191T/W EHA07173 EHA07183

WK2 94V0

Abstract: transistor wu1 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -10/-1 -1/-0.1 -10/-1 -5/-0.25 -5/-0.5 -10/-1 -1/-0.1 -10/-1 -5/-0.25 -5/-0.5 -5/-0.25 -10/-1 -1/-0.1 -10/-1 -0.5/-0.05 -5/-0.25 -5/-0.5 -5/-0.25 -10/-1 -1/-0.1 -10/-1 -0.5/-0.05 -5/-0.25 -5/-0.5 , 250 250 250 250 250 250 250 250 250 250 250 250 250 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5 -10/-5
-
Original
WK2 94V0 transistor wu1 94v0 wk2 wk2 sot 23 wk1 sot-23 wu1 sot-23 CHDTA114TMPT CHDTA115TMPT CHDTA124TMPT CHDTA143TMPT CHDTA144TMPT CHDTA114TEPT
Abstract: 17.5 17.5 17.5 17.5 17.5 17 .5 17 .5 17.5 UAX. C O LL. O IS S. in Free A ir ji 2 5 * C Pc (W alls) 1.0 1.0 1.0 1.0 1 .0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 2.0 2.0 2 .0 M X. BVC Eo T E , IfB O Vet 025* C (A M P ) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 h « (M IN . , 1.0 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IJQ 1.0 1.5 1.5 1.5 1.5 1.5 1.5 15 15 15 15 15 15 15 15 15 , TYPE M AX. C O LL. D IS S . w / in f. Heat Sink (W alls) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 -
OCR Scan
SP2255 TRSP2505S

Transistor WRS

Abstract: BCR198 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 50 Collector current IC 70 , - 190 - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 V, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0,5 mA , Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V
Infineon Technologies
Original
BCR198 BCR198S BCR198F BCR198L3 BCR198T BCR198W Transistor WRS BCR198/F/L3 BCR198T/W
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