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Part : BD899 Supplier : Bourns Manufacturer : Bristol Electronics Stock : 4,310 Best Price : $0.2925 Price Each : $1.1250
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BD899 Datasheet

Part Manufacturer Description PDF Type
BD899 Bourns NPN SILICON POWER DARLINGTONS Original
BD899 Power Innovations NPN SILICON POWER DARLINGTON Original
BD899 General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Scan
BD899 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD899 Motorola European Master Selection Guide 1986 Scan
BD899 N/A Cross Reference Datasheet Scan
BD899 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD899 N/A Semiconductor Master Cross Reference Guide Scan
BD899 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD899 N/A Shortform Transistor Datasheet Guide Scan
BD899 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD899 National Semiconductor Shortform National Semiconductor Datasheet Scan
BD899 National Semiconductor PRO ELECTRON SERIES - JFET Scan
BD899 Texas Instruments 80 V, 8 A, 70 W, NPN silicon power darlington Scan
BD899A Bourns NPN SILICON POWER DARLINGTONS Original
BD899A Power Innovations NPN SILICON POWER DARLINGTONS Original
BD899A General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Scan
BD899A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD899A Motorola European Master Selection Guide 1986 Scan
BD899A N/A Cross Reference Datasheet Scan
Showing first 20 results.

BD899

Catalog Datasheet MFG & Type PDF Document Tags

C03GE

Abstract: BD901 '" bd899a only 3 4« 750 â'" _ _ vbe bd899.bd901 3 3® â'" 2.5 â'" 2.5 v bd899a only 3 4a â , "2.°! _;_uanington Power Transistors File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: â , VIEW IUi-S»ll JEDEC TO-220AB The RCA-BD895, BD895A, BD897, BD897A, BD899, BD899A, and BD901 are , ) from casa for 10 s max. BD897 BD8S7A 60 60 BD899 BD899A 80 80
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BD896 C03GE BD597 case BD901 darlington series bd bd901 power applications 0Q17577 45-60-80-100-V TQ-220AB 92CS-32690

BD897

Abstract: BD901 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 , BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS 62c 3&600 , ) PARAMETER TEST CONDITIONS BD899, BD899A BD901 UNIT MIN TYP MAX MIN TYP MAX V|BRICEO ic = 100 mA, ìb , . IC = 3 A, See Notes 3 and 4 BD899, BD 901 2.5 2.5 V VCE = 3V, le = 4A, See Notes 3 and 4 BD899A 2.5 , "961726 TEXAS INSTR (OPTO) 62C 36602 0 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER
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1N914 D03bt T-33-29

transistor BD901

Abstract: BD901 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) BD899 V CBO 60 80 BD901 V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 BD895 BD897 VALUE 45 BD897 BD899 VCEO 60 80 V 100 BD901 VEBO 5 , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , IB = 0 BD899 0.5 V VCE = 50 V 0.2 Collector cut-off VCB = 100 V IE = 0
Bourns
Original
BD898 BD900 BD902 transistor BD901 7508A

transistor BD901

Abstract: BD901 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , BD899 VALUE VCBO 60 80 BD901 V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 45 BD897 BD899 VCEO BD901 60 80 V 100 V EBO 5 V Continuous , , BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical , 60 BD899 MAX 80 BD897 0.5 cut-off current V CE = 40 V IB = 0 BD899 0.5
Power Innovations
Original

transistor BD901

Abstract: bd897 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , ) RATING BD895 Collector-base voltage ( lE = 0) BD897 BD899 BD901 BD895 Collector-em itter voltage ( lB = 0) BD897 BD899 BD901 Base-emitter voltage Continuous collector current Continuous base current , processing does not necessarily include testing of all parameters. BD895, BD897, BD899, BD901 NPN SILICON , BD897 BD899 BD901 V V CE= Collector-em itter 'C E O 30 V 30 V 40 V 50 V 45 V 60 V 80 V lB =
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BD901

Abstract: BD899 BD899A only VBE BD899.BD901 BD899A only VCE(sat) BD899 BD901 BD899A only hfe f = 1 MHz 3 4« 3* 0.016 - 1 , BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON]) S E CT OR SbE D File , A (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications , BD89S, BD645, BD895A, BDS97, BD897A, BD899, BD899A, and BD901 are m onolithic silicon n-p-n Darling ton , . BD897 BD897A 60 60 - 5 BD899 BD899A 80 80 BD901 - 100 100 V V V A A W W/°C ·C VCEO(sus
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220AB BD89SA BD896A BDB95

7508A

Abstract: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use , BD901 45 BD897 BD899 V CEO BD901 Base-emitter voltage V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 E T E L O S B O BD899 VALUE 60 80 V 100 , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , CONDITIONS MIN BD895 BD897 MAX 60 BD899 80 BD901 Collector-emitter TYP 100 V
Bourns
Original
TCS130AB TCS130AC SAS130AD TIS130AB
Abstract: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use , (unless otherwise noted) RATING SYMBOL BD895 Collector-base voltage (IE = 0) BD897 BD899 VALUE 45 V CBO 60 80 BD901 45 BD897 BD899 V CEO BD901 Base-emitter voltage V , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , IB = 0 BD899 0.5 V VCE = 50 V 0.2 Collector cut-off VCB = 100 V IE = 0 Bourns
Original

case BD901

Abstract: BD901 °C 'ebo v CEO , BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: 9 2 C S , VEBO. 45 45 BD897 BD897A 60 60 - 5 . 8 0.1 BD899 BD899A 80 80 BD901 - 100 100 'c , 150 - 235 °C 2-263 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 E L E C T R IC A
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transistor BD901

Abstract: BD897 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) BD899 V CBO 60 80 BD901 V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 BD895 BD897 VALUE 45 BD897 BD899 VCEO 60 80 V 100 BD901 VEBO 5 , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , IB = 0 BD899 0.5 V VCE = 50 V 0.2 Collector cut-off VCB = 100 V IE = 0
Bourns
Original

BD901

Abstract: BD897 OND EMIC GE S AN Collector-base voltage Open emitter BD899 VCEO CONDITIONS , base V BD899 Emitter-base voltage IC Base current PT 100 Collector current-DC , 60 IC=100mA, IB=0 V BD899 80 BD901 VCEsat TYP. 100 IC=3A ,IB=12mA 2.5 V , BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD897 VCE=30V, IB , =0 BD899 ICEO BD895 0.2 2.0 VCE=50V, IB=0 SEM E Collector cut-off current IN
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ic 901 BD895/897/899/901 BD896/898/900/902

B0897

Abstract: case BD901 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations , Collector-base voltage (tg = 0) BD897 BD899 BD901 BD895 Coti eel or-emitter voltage ( % = 0) BD897 BD899 BD901 , . I NNOVATI ONS P 3-11 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS A U G U ST , 60 V 80 V 45V 60 V 80 V tB =0 0D895 BD897 BD899 BD901 BD895 B0897 BD899 BD901 T c = 100°C Tc , ) (see Notes 3 and 4) 750 BD895 BD897 BD899 BD901 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2 2 2 2 2 mA mA mA
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D895 B0898 B0901

BD901

Abstract: BD897 Collector-base voltage BD897 BD899 VALUE 45 Open emitter 60 80 BD901 Collector-emitter voltage V 100 BD895 VCEO UNIT 45 BD897 BD899 Open base BD901 60 80 V , Collector-emitter breakdown voltage MIN MAX UNIT 45 BD897 60 IC=100mA, IB=0 V BD899 80 , =0 TC=100 0.2 2.0 VCB=60V, IE=0 TC=100 0.2 2.0 BD899 VCB=80V, IE=0 TC=100 0.2 2.0 BD901 VCB=100V, IE=0 TC=100 0.2 2.0 BD895 VCE=30V, IB=0 BD897 VCE=30V, IB=0 BD899
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D895

Abstract: transistor Bd 699 MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | MOTOROLA TECHNICAL DATA SEMICONDUCTOR BD895, BD895A BD897, BD897A BD899, BD899A BD901 DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS 45-60-80-100 V O L T S 70 W ATTS PLASTIC POWER SILICON NPN DARLINGTONS . for use as output , , 699A, 701. M A X IM U M R A TIN G S BD895 BD899 Symbol BD895A BD897 BD899A BD897A V C EO VC B veb , GüaM7bb 1 | BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 T-33-29 E L E C T R IC A L C H A R A
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BD695A transistor Bd 699 D-897 bd897 motorola BDS95A AN-415

D895

Abstract: BD 895 > 62C 3 6 5 9 9 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS , BD899 BD899A 80 V 80 V BD901 100V 100V Collector-emitter voltage (Ib = 0 ) Emitter-base voltage , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS electrical characteristics , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARUNGTONS thermal characteristics , , BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS S TA TIC FORW ARD
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BD 895 bdw 34 a

BDX538

Abstract: TP121 65 BDX53B 8 80 750 min. 3 3 60 BD647 8 80 750 min. 3 3 62.5 BD899, A 8 80 750 min. 3 3 7Q 2N6045
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2N6385 2N6650 2N6383 BDX83 2N6055 2N6384 BDX538 TP121 2N6056 000S733

BDX53D

Abstract: D45VH4 1 Baza/Base 2 Kolektor/Collector 3 Emitor/Emitter J0,7maks 5,2mgks Sl./Fig. 60 Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type Uceo lo Ptoi hfE pri/at le fi Si./ NPN PNP (V) . (A) ' m min/maks (A) (MHz) Fig. 2N6044 2N6041 80 â'¢:'â'¢- 8 â'¢â'¢ 75 1k/l0k 4 4 TIP101 TIP106 ¿v â  80 1k/20k 3 4 BDX53B BDX54B . 60 750 min 3 TIP131 TIP136 -â'¢ :.: 70 1k/15k 4 BD899 BD900 - i - " ^ . - i - 70 750 min 3 BD899A BD900A â'¢ ., '. -'- "70 750 min 4
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BDX53D D44H5 BD807 D44E3 SE9302 BUS36 D45VH4 bdw41 BDX53C BDX54C TIP132 TIP137 2N6042 TIP102

r3673

Abstract: Y1031 BD744C BD744C-S BD897A BD897A-S BD898 BD898-S BD899 BD899A BD899A-S BD899-S BD900 BD900-S
Bourns
Original
TIP43 Y1031 r3673 TIC106D Thyristor r3673 Philippines R3672 BLBF39 MP150SG KTMC-1030NAP E106817 TIP122-S TIP125

BOX53C

Abstract: box54c 1.5 typ 3 4# 80 BDX53B BDX54B 750 min 3 60 TIP131 TIP136 1k/15k 4 70 BD899 BD900 750 min 3 70 BD899A BD900A 750 min 4 70 100 BDX53C BDX54C 750 min 3 60 TIP132 TIP137
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2N6386 BOX53C box54c BOX33C box53b transistor box54c box53a BDX53 BDX54 BDX53A BDX54A TIP130
Abstract: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless Bourns
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TCS135AB TCS135AC SAS135AD

TIC106M SCR

Abstract: TIC106D equivalent BD899 BD899A BD900 BD900A BD901 BD902 BD909 BD910 BD911 BD912 BDW73 BDW73A BDW73B BDW73C , TIP36C TIP36C BD544A BD544B BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A BD899 BD899A
Bourns
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TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP30C BD240C TIPP32C BD242B BD242C TIP32B

TIC106D equivalent

Abstract: TIC106M SCR BD899 BD899A BD900 BD900A BD901 BD902 BD909 BD910 BD911 BD912 BDW73 BDW73A BDW73B BDW73C , TIP36C TIP36C BD544A BD544B BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A BD899 BD899A
Bourns
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BD249 EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent TIP32C BD540C BD244B BD244C TIP42B TIP42C
Showing first 20 results.