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BD897A Datasheet

Part Manufacturer Description PDF Type
BD897A Bourns NPN SILICON POWER DARLINGTONS Original
BD897A Power Innovations NPN SILICON POWER DARLINGTON Original
BD897A General Electric 8 A N-P-N darlington power transistor. 60 V. 70 W. Scan
BD897A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD897A Motorola European Master Selection Guide 1986 Scan
BD897A N/A Cross Reference Datasheet Scan
BD897A N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD897A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD897A N/A Shortform Transistor Datasheet Guide Scan
BD897A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD897A National Semiconductor Shortform National Semiconductor Datasheet Scan
BD897A National Semiconductor PRO ELECTRON SERIES - JFET Scan
BD897A Texas Instruments 60 V, 8 A, 70 W, NPN silicon power darlington Scan
BD897A-S Bourns NPN DARLINGTON 60V 8A Original

BD897A

Catalog Datasheet MFG & Type PDF Document Tags

C03GE

Abstract: BD901 "2.°! _;_uanington Power Transistors File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: â , VIEW IUi-S»ll JEDEC TO-220AB The RCA-BD895, BD895A, BD897, BD897A, BD899, BD899A, and BD901 are , 5081' G E SOLID STATE CME~ 17278 dT^SB'Z? Darlington Power Transistors BD895, BD895A, BD897, BD897A , "^ _Darlington Power Transistore BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 ELECTRICAL CHARACTERISTICS
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BD896 C03GE BD597 case BD901 I/BD899 darlington series bd 0Q17577 45-60-80-100-V TQ-220AB 92CS-32690

BD895A

Abstract: BD896A BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with , (unless otherwise noted) RATING SYMBOL BD897A V CBO BD895A BD897A 60 V 80 BD899A , notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 BD899A IC = 100 mA TYP 80 V VCE(sat) VBE(on) VEC 0.5 BD897A 0.5 VCE = 40 V IB = 0
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BD896A BD898A BD900A S130AB
Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD895A Collector-base voltage ( lE = 0) BD897A BD899A BD895A Collector-em itter voltage ( lB = 0) BD897A , not necessarily include testing of all parameters. BD895A, BD897A, BD899A NPN SILICON POWER , (see Note 3) BD897A BD899A CD MIN 45 60 80 TYP MAX UNIT breakdown voltage V , > LO BD895A BD897A BD899A BD895A BD897A BD899A T c = 100°C T c = 100°C T c = 100°C (see Notes 3 and -
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Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with , otherwise noted) RATING SYMBOL BD897A V CBO V CEO 60 V 80 BD899A Emitter-base voltage V 45 BD895A BD897A 60 80 BD899A Collector-emitter voltage (IB = 0) UNIT 45 , change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical , breakdown voltage TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 Bourns
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TCS130AB TCS130AC SAS130AE TIS130AB

BD895A

Abstract: BD896A BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited , (unless otherwise noted) RATING SYMBOL BD895A Collector-base voltage (IE = 0) BD897A VCBO 60 V 80 BD895A BD897A UNIT 45 BD899A Collector-emitter voltage (IB = 0) VALUE , include testing of all parameters. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST , BD895A IB = 0 (see Note 3) BD897A MAX 60 BD899A IC = 100 mA TYP 80 V
Power Innovations
Original
Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with , noted) RATING SYMBOL BD897A V CBO E T E L O S B O BD899A BD895A Collector-emitter voltage (IB = 0) BD897A V CEO BD899A Emitter-base voltage UNIT 45 BD895A , Specifications are subject to change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER , )CEO Collector-emitter breakdown voltage TEST CONDITIONS MIN BD895A IB = 0 BD897A Bourns
Original

BD897

Abstract: BD901 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 , maximum ratings at 25°C case temperature (unless otherwise noted) BD895 BD895A BD897 BD897A BD899 , BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS 62c 3&600 , , BD897A UNIT MIN TYP MAX MIN TYP MAX V(BR|CEO IC = 100mA, Ià = 0, - See Note 3 45 60 V 'CEO VCE = , 4 BD895A, BD897A 750 750 , VBE(on) VCE = 3V. IC = 3 A, See Notes 3 and 4 BD895, BD897 2.5 2.5 V
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1N914 D03bt T-33-29

BD895A

Abstract: BD896A BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with , (unless otherwise noted) RATING SYMBOL BD897A V CBO BD895A BD897A 60 V 80 BD899A , notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 BD899A IC = 100 mA TYP 80 V VCE(sat) VBE(on) VEC 0.5 BD897A 0.5 VCE = 40 V IB = 0
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Abstract: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited , Collector-base voltage (!g = 0} BD895A BD897A BD899A SYMBOL VALUE 45 60 SO 45 60 60 5 8 0.3 70 2 -65 to , processing does not necessarily include testing of aR parameters. INNOVATIONS 3-15 BD895A, BD897A , CONDITIONS BD895A »8=0 !a = 0 la =0 la = 0 !e = MIN 45 60 80 BD897A BD899A BD395A BD897A 8DB99A B0895A BD897A BD899A TYP MAX UNIT V (see Note 3} 0.5 0.5 0.5 0.2 0.2 0.2 2 2 2 2 750 2.8 mA -
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B0898A BDS97A T1S130A

BD897A

Abstract: BD895A Collector-base voltage BD897A VALUE 45 Open emitter 60 BD899A Collector-emitter voltage 45 BD897A Open base BD899A VEBO Emitter-base voltage IC Base current PT 60 V 80 , SYMBOL PARAMETER CONDITIONS BD895A V(BR)CEO Collector-emitter breakdown voltage BD897A , on voltage IC=4A ; VCE=3V 2.5 V VCB=45V, IE=0 TC=100 0.2 2.0 BD897A VCB=60V, IE=0 TC=100 0.2 2.0 VCB=80V, IE=0 TC=100 0.2 2.0 BD895A VCE=30V, IB=0 BD897A
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BD895A/897A/899A BD896A/898A/900A

BD901

Abstract: BD899 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON]) S E CT OR SbE D File , A (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications , BD89S, BD645, BD895A, BDS97, BD897A, BD899, BD899A, and BD901 are m onolithic silicon n-p-n Darling ton , . BD897 BD897A 60 60 - 5 BD899 BD899A 80 80 BD901 - 100 100 V V V A A W W/°C ·C VCEO(sus , . BD895A, BD897, BD897A, BD899, BD899A, BD901 HARRIS SEIUCOND SECTOR SbE ]> 4302271 004 0bflb 177 H H A S
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220AB BD89SA BDB95

BD895A

Abstract: BD897A OND IC BD895A Collector-base voltage SEM E BD897A ANG INCH Collector-emitter voltage Open emitter Emitter-base voltage IC BD895A V 45 BD897A Open base 60 , (BR)CEO Collector-emitter breakdown voltage BD897A TYP. MAX UNIT 45 IC=100mA, IB , =0 TC=100 0.2 2.0 BD897A VCB=60V, IE=0 TC=100 0.2 2.0 BD899A VCB=80V, IE=0 TC=100 0.2 2.0 BD895A VCE=30V, IB=0 BD897A VCE=30V, IB=0 BD899A VCE=40V, IB=0 Collector
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case BD901

Abstract: BD901 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: 9 2 C S , Fig. 1- S ch e m a tic d ia g ra m fo r a ll types. The BD895, BD645, BD895A, BD897, BD897A, BD899 , VEBO. 45 45 BD897 BD897A 60 60 - 5 . 8 0.1 BD899 BD899A 80 80 BD901 - 100 100 'c , 150 - 235 °C 2-263 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 E L E C T R IC A
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D895

Abstract: BD 895 > 62C 3 6 5 9 9 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS , (unless otherwise noted) BD895 BD895A Collector-base voltage 45V 45 V f BD897 BD897A 60 V 60 V , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS electrical characteristics , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARUNGTONS thermal characteristics , , BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS S TA TIC FORW ARD
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D895 BD 895 bdw 34 a

D895

Abstract: transistor Bd 699 MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | MOTOROLA TECHNICAL DATA SEMICONDUCTOR BD895, BD895A BD897, BD897A BD899, BD899A BD901 DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS 45-60-80-100 V O L T S 70 W ATTS PLASTIC POWER SILICON NPN DARLINGTONS . for use as output , , 699A, 701. M A X IM U M R A TIN G S BD895 BD899 Symbol BD895A BD897 BD899A BD897A V C EO VC B veb , GüaM7bb 1 | BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 T-33-29 E L E C T R IC A L C H A R A
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BD695A transistor Bd 699 transistor BD901 D-897 bd897 motorola BDS95A AN-415

BOX53C

Abstract: box54c POWER TRANSISTORS â'" BIPOLAR PLASTIC (continued) TO-220AB Package (continued) Resistive Switching ts t, fT PD (Case) lcCont VcEO (SUS) Device Type hFE @lc US HS @lc MHz Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min @ 25"C 8 40 2N6386 1 k/20k 3 20# 65 45 BDX53 BDX54 750 min 3 60 BD895 BD896 750 min 3 70 BD895A BD896A 750 min 4 70 60 BDX53A BDX54A 750 min 3 60 TIP130 TIP135 1k/15k 4 70 BD897 BD898 750 min 3 70 BD897A BD898A
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BD807 BOX53C box54c BOX33C box53b transistor box54c box53a 2N6043 2N6040 TIP100 TIP105 2N6044 2N6041

BD895A

Abstract: BD896A BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD898A V CBO BD896A BD898A -60 V -80 BD900A
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r3673

Abstract: Y1031 BD744C BD744C-S BD897A BD897A-S BD898 BD898-S BD899 BD899A BD899A-S BD899-S BD900 BD900-S
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TIP43 Y1031 r3673 TIC106D Thyristor r3673 Philippines R3672 BLBF39 MP150SG KTMC-1030NAP E106817 TIP122-S TIP125

BDX334

Abstract: bdy37a 3.00 3.00 3.00 2 2 2 3 3 3 3 1 T022Ã T0220 T0220 T0220 BD895A BD897 BD897A BD899 NPN NPN NPN NPN 70.0
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BD647 BD649 BD795 BD796 BD797 BD798 BDX334 bdy37a BDY56 0QDD053

r3673

Abstract: Y1031 BD743B BD743B-S BD743C BD743C-S BD744A BD744A-S BD744B BD744C BD744C-S BD897A BD897A-S BD898
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mp150s TIC226D Philippines transistor bf64 bd657 R3673-S transistor bf65 TIP125-S TIP126 TIP126-S TIP127 TIP127-S TIP130-S

BDX538

Abstract: TP121 BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD898A V CBO BD896A BD898A -60 V -80 BD900A
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2N6385 2N6650 2N6383 BDX83 2N6055 2N6384 BDX538 TP121 2N6056 000S733

TIC106M SCR

Abstract: TIC106D equivalent BD743B BD743B-S BD743C BD743C-S BD744A BD744A-S BD744B BD744C BD744C-S BD897A BD897A-S BD898
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TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP30C BD240C TIPP32C BD242B BD242C TIP32B
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