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BD897 Datasheet

Part Manufacturer Description PDF Type
BD897 Bourns NPN SILICON POWER DARLINGTONS Original
BD897 Power Innovations NPN SILICON POWER DARLINGTON Original
BD897 General Electric 8 A N-P-N darlington power transistor. 60 V. 70 W. Scan
BD897 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD897 Motorola European Master Selection Guide 1986 Scan
BD897 N/A Cross Reference Datasheet Scan
BD897 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD897 N/A Semiconductor Master Cross Reference Guide Scan
BD897 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD897 N/A Shortform Transistor Datasheet Guide Scan
BD897 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD897 National Semiconductor Shortform National Semiconductor Datasheet Scan
BD897 National Semiconductor PRO ELECTRON SERIES - JFET Scan
BD897 Texas Instruments 60 V, 8 A, 70 W, NPN silicon power darlington Scan
BD897A Bourns NPN SILICON POWER DARLINGTONS Original
BD897A Power Innovations NPN SILICON POWER DARLINGTON Original
BD897A General Electric 8 A N-P-N darlington power transistor. 60 V. 70 W. Scan
BD897A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD897A Motorola European Master Selection Guide 1986 Scan
BD897A N/A Cross Reference Datasheet Scan
Showing first 20 results.

BD897

Catalog Datasheet MFG & Type PDF Document Tags

C03GE

Abstract: BD901 "2.°! _;_uanington Power Transistors File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: â , VIEW IUi-S»ll JEDEC TO-220AB The RCA-BD895, BD895A, BD897, BD897A, BD899, BD899A, and BD901 are , 5081' G E SOLID STATE CME~ 17278 dT^SB'Z? Darlington Power Transistors BD895, BD895A, BD897, BD897A , "^ _Darlington Power Transistore BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 ELECTRICAL CHARACTERISTICS
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BD896 C03GE BD597 case BD901 I/BD899 darlington series bd 0Q17577 45-60-80-100-V TQ-220AB 92CS-32690

BD897

Abstract: BD901 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 , maximum ratings at 25°C case temperature (unless otherwise noted) BD895 BD895A BD897 BD897A BD899 , BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS 62c 3&600 , 4 BD895A, BD897A 750 750 , VBE(on) VCE = 3V. IC = 3 A, See Notes 3 and 4 BD895, BD897 2.5 2.5 V , Notes 3 and 4 BD895, BD897 2.5 2.5 V lc = 4 A, Ig = 16mA, See Notes 3 and 4 BD895A, BD897A 2.8 2.8 â
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1N914 D03bt T-33-29

transistor BD901

Abstract: BD901 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , BD895 BD897 VALUE 45 BD897 BD899 VCEO 60 80 V 100 BD901 VEBO 5 , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , CONDITIONS MIN BD895 Collector-emitter BD897 80 IB = 0 VCE = 30 V ICEO IB = 0 BD895 0.5 Collector-emitter VCE = 30 V IB = 0 BD897 0.5 cut-off current VCE = 40 V
Bourns
Original
BD898 BD900 BD902 transistor BD901 7508A

transistor BD901

Abstract: BD901 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , temperature (unless otherwise noted) RATING SYMBOL BD895 Collector-base voltage (IE = 0) BD897 , ) UNIT 45 45 BD897 BD899 VCEO BD901 60 80 V 100 V EBO 5 V Continuous , , BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical , 60 BD899 MAX 80 BD897 0.5 cut-off current V CE = 40 V IB = 0 BD899 0.5
Power Innovations
Original

transistor BD901

Abstract: bd897 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , ) RATING BD895 Collector-base voltage ( lE = 0) BD897 BD899 BD901 BD895 Collector-em itter voltage ( lB = 0) BD897 BD899 BD901 Base-emitter voltage Continuous collector current Continuous base current , processing does not necessarily include testing of all parameters. BD895, BD897, BD899, BD901 NPN SILICON , BD897 BD899 BD901 V V CE= Collector-em itter 'C E O 30 V 30 V 40 V 50 V 45 V 60 V 80 V lB =
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7508A

Abstract: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use , otherwise noted) RATING SYMBOL BD895 Collector-base voltage (IE = 0) BD897 V CBO 60 80 BD901 45 BD897 BD899 V CEO BD901 Base-emitter voltage V 100 BD895 , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , CONDITIONS MIN BD895 BD897 MAX 60 BD899 80 BD901 Collector-emitter TYP 100 V
Bourns
Original
TCS130AB TCS130AC SAS130AD TIS130AB
Abstract: BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use , (unless otherwise noted) RATING SYMBOL BD895 Collector-base voltage (IE = 0) BD897 BD899 VALUE 45 V CBO 60 80 BD901 45 BD897 BD899 V CEO BD901 Base-emitter voltage V , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , CONDITIONS MIN BD895 Collector-emitter BD897 80 IB = 0 VCE = 30 V ICEO IB = 0 BD895 Bourns
Original

transistor BD901

Abstract: BD897 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , BD895 BD897 VALUE 45 BD897 BD899 VCEO 60 80 V 100 BD901 VEBO 5 , Specifications are subject to change without notice. 1 BD895, BD897, BD899, BD901 NPN SILICON POWER , CONDITIONS MIN BD895 Collector-emitter BD897 80 IB = 0 VCE = 30 V ICEO IB = 0 BD895 0.5 Collector-emitter VCE = 30 V IB = 0 BD897 0.5 cut-off current VCE = 40 V
Bourns
Original

B0897

Abstract: case BD901 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations , Collector-base voltage (tg = 0) BD897 BD899 BD901 BD895 Coti eel or-emitter voltage ( % = 0) BD897 BD899 BD901 , . I NNOVATI ONS P 3-11 BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS A U G U ST , otherwise noted) PARAM ETER Collector-emitter V (BR)CEO TEST CONDITIONS B D 89 5 BD897 BDfjgg BD901 , 60 V 80 V 45V 60 V 80 V tB =0 0D895 BD897 BD899 BD901 BD895 B0897 BD899 BD901 T c = 100°C Tc
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D895 B0898 B0901

BD901

Abstract: BD899 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 HARR IS SENICON]) S E CT OR SbE D File , A (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications , . BD897 BD897A 60 60 - 5 BD899 BD899A 80 80 BD901 - 100 100 V V V A A W W/°C ·C VCEO(sus , . BD895A, BD897, BD897A, BD899, BD899A, BD901 HARRIS SEIUCOND SECTOR SbE ]> 4302271 004 0bflb 177 H H A S , BD895A,BD897A VBE BD895.BD897 BD896A.BD897A VCE(sat) BD895 BD897 b 0 0 LIMITS BD 997 BDB95 UNITS
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BD645 BD89S BDS97 220AB BD89SA

case BD901

Abstract: BD901 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 File Number 1240 8-Ampere N-P-N , (BD895A, BD897A, BD899A) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: 9 2 C S , Fig. 1- S ch e m a tic d ia g ra m fo r a ll types. The BD895, BD645, BD895A, BD897, BD897A, BD899 , VEBO. 45 45 BD897 BD897A 60 60 - 5 . 8 0.1 BD899 BD899A 80 80 BD901 - 100 100 'c , 150 - 235 °C 2-263 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 E L E C T R IC A
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BD901

Abstract: BD897 TOR UC Absolute maximum ratings(Ta=25) SYMBOL PARAMETER BD895 BD897 VCBO INCH , VALUE 45 60 V 80 BD901 100 BD895 45 BD897 Collector-emitter voltage 60 Open , CONDITIONS BD895 V(BR)CEO Collector-emitter breakdown voltage MIN MAX UNIT 45 BD897 , BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD897 VCE=30V, IB
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ic 901 BD895/897/899/901 BD896/898/900/902

BD901

Abstract: BD897 Collector-base voltage BD897 BD899 VALUE 45 Open emitter 60 80 BD901 Collector-emitter voltage V 100 BD895 VCEO UNIT 45 BD897 BD899 Open base BD901 60 80 V , Collector-emitter breakdown voltage MIN MAX UNIT 45 BD897 60 IC=100mA, IB=0 V BD899 80 , BD901 VCB=100V, IE=0 TC=100 0.2 2.0 BD895 VCE=30V, IB=0 BD897 VCE=30V, IB=0 BD899 VCE=40V, IB=0 BD901 ICEO 2.5 BD897 ICBO IC=3A ,IB=12mA BD895 VBE
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Original
bd901 power applications

D895

Abstract: BD 895 > 62C 3 6 5 9 9 BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS , (unless otherwise noted) BD895 BD895A Collector-base voltage 45V 45 V f BD897 BD897A 60 V 60 V , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS electrical characteristics , , BD895A, BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARUNGTONS thermal characteristics , D 895, BD 897 B D 8 9 5 A ,B D 8 9 7 A B D 895, BD897 B D 8 9 5 A ,B D 8 9 7 A B D 895, BD 897 B D 8
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BD 895 bdw 34 a

D895

Abstract: transistor Bd 699 MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | MOTOROLA TECHNICAL DATA SEMICONDUCTOR BD895, BD895A BD897, BD897A BD899, BD899A BD901 DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS 45-60-80-100 V O L T S 70 W ATTS PLASTIC POWER SILICON NPN DARLINGTONS . for use as output , , 699A, 701. M A X IM U M R A TIN G S BD895 BD899 Symbol BD895A BD897 BD899A BD897A V C EO VC B veb , GüaM7bb 1 | BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 T-33-29 E L E C T R IC A L C H A R A
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BD695A transistor Bd 699 D-897 bd897 motorola BDS95A AN-415

BDX538

Abstract: TP121 . 4 3 70 BDX53A 8 60 750 min. 3 3 60 BD645 8 60 750 min. 3 3 62.5 BD897, A 8 60 750 min. 3 3 70
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2N6385 2N6650 2N6383 BDX83 2N6055 2N6384 BDX538 TP121 2N6056 000S733

BD897

Abstract: Power Transistors www.jmnic.com BD897 Silicon PNP Transistors Features BCE With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 60 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A PC Collector power dissipation 70 W Tj Junction
JMnic
Original
Abstract: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless Bourns
Original
TCS135AB TCS135AC SAS135AD

BOX53C

Abstract: box54c POWER TRANSISTORS â'" BIPOLAR PLASTIC (continued) TO-220AB Package (continued) Resistive Switching ts t, fT PD (Case) lcCont VcEO (SUS) Device Type hFE @lc US HS @lc MHz Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min @ 25"C 8 40 2N6386 1 k/20k 3 20# 65 45 BDX53 BDX54 750 min 3 60 BD895 BD896 750 min 3 70 BD895A BD896A 750 min 4 70 60 BDX53A BDX54A 750 min 3 60 TIP130 TIP135 1k/15k 4 70 BD897 BD898 750 min 3 70 BD897A BD898A
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BD807 BOX53C box54c BOX33C box53b transistor box54c box53a 2N6043 2N6040 TIP100 TIP105 2N6044 2N6041
Abstract: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is currently available, but not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature Bourns
Original

TIC106M SCR

Abstract: TIC106D equivalent BD746 BD746A BD746B BD746C BD808 BD810 BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A , TIP36C TIP36C BD544A BD544B BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A BD899 BD899A
Bourns
Original
TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP30C BD240C TIPP32C BD242B BD242C TIP32B

TIC106D equivalent

Abstract: TIC106M SCR BD746 BD746A BD746B BD746C BD808 BD810 BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A , TIP36C TIP36C BD544A BD544B BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A BD899 BD899A
Bourns
Original
BD249 EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent TIP32C BD540C BD244B BD244C TIP42B TIP42C
Showing first 20 results.