BD895A BD897A BD899A BD896A BD898A BD900A TCS130AD TCS130AB TCS130AC SAS130AE

NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BD896A, BD898A and BD900A 70 W at 25°C Case Temperature 8 A

BD895A BD895A, BD897A BD897A, BD899A BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BD896A BD896A, BD898A BD898A and BD900A BD900A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD897A BD897A V CBO BD895A BD895A BD897A BD897A 60 V 80 BD899A BD899A Collector-emitter voltage (IB = 0) UNIT 45 BD895A BD895A Collector-base voltage (IE = 0) VALUE 45 VCEO BD899A BD899A 60 V 80 VEBO 5 Continuous collector current IC 8 A Continuous base current IB 0.3 A W Emitter-base voltage V Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating free-air temperature range TA -65 to +150 °C Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. NOITAMROFNI TCUDORP AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD895A BD895A, BD897A BD897A, BD899A BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter breakdown voltage TEST CONDITIONS MIN BD895A BD895A IB = 0 BD897A BD897A (see Note 3) MAX 60 BD899A BD899A IC = 100 mA TYP 80 V VCE(sat) VBE(on) VEC 0.5 BD897A BD897A 0.5 VCE = 40 V IB = 0 BD899A BD899A 0.5 IE = 0 BD895A BD895A 0.2 IE = 0 BD897A BD897A 0.2 Collector cut-off VCB = 80 V IE = 0 BD899A BD899A 0.2 current VCB = 45 V IE = 0 TC = 100°C BD895A BD895A 2 IE = 0 TC = 100°C BD897A BD897A 2 VCB = 80 V hFE BD895A BD895A IB = 0 VCB = 60 V IEBO IB = 0 VCE = 30 V VCB = 60 V ICBO VCE = 30 V VCB = 45 V ICEO UNIT 45 IE = 0 TC = 100°C BD899A BD899A 2 VEB = 5V IC = 0 (see Notes 3 and 4) VCE = 3V IC = 4 A (see Notes 3 and 4) 16 mA IC = 4 A 3V IC = 4 A Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage IB = VCE = IE = 8 A mA mA 2 mA (see Notes 3 and 4) 2.8 V (see Notes 3 and 4) 2.5 V 3.5 V 750 IB = 0 NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP ton IB(on) = 12 mA IB(off) = -12 mA 1 µs VBE(off) = -3.5 V RL = 10 tp = 20 µs, dc 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. TCUDORP 2 IC = 3 A Turn-off time NOITAMROFNI Turn-on time toff AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD895A BD895A, BD897A BD897A, BD899A BD899A NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AD TCS130AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AB TCS130AB 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. NOITAMROFNI TCUDORP AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD895A BD895A, BD897A BD897A, BD899A BD899A NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS130AE SAS130AE 1·0 0·1 BD895A BD895A BD897A BD897A BD899A BD899A 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB TIS130AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. NOITAMROFNI TCUDORP 4 AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.