500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

BD843 Datasheet

Part Manufacturer Description PDF Type
BD843 Philips Semiconductors Silicon Planar Epitaxial Power Transistors Original
BD843 Continental Device India TO-202 NPN Plastic Package Transistors Scan
BD843 N/A Shortform Transistor PDF Datasheet Scan
BD843 N/A Cross Reference Datasheet Scan
BD843 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD843 N/A Shortform Data and Cross References (Misc Datasheets) Scan

BD843

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BD839 BD841 BD843 PHILIPS INTERNATIONAL SbE J> â  7110fl2b 0043025 273 «PHIN T , BD844. QUICK REFERENCE DATA BD839 BD841 BD843 Collector-base voltage (open emitter) vCBO max. 45 , Respective Manufacturer BD839 BD841 BD843 PHILIPS INTERNATIONAL SbE T> â  RATINGS Limiting values in , From junction to ambient in free air From junction to mounting base BD839 BD841 BD843 vCBO max , of BD839/BD840, BD841/BD842, BD843/BD844 | lC |-150 mA; | VCE | = 2 V BD839 BD841 _^ BD843 â -
OCR Scan
BD840 BD842 IEC134 J 3305 T-3Z-05- T0-202 T-33-05
Abstract: BD839 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a , V M E C H A N IC A L D A T A 10, U max 0,5 BD841 60 60 60 3 2 10 150 25 125 BD843 100 80 100 , ) Plastic flash allowed w ith in this zone. September 1994 423 BD839 BD841 BD843 RATINGS Lim , to + 150 max. 150 BD843 100 80 100 5 V V V V A A W W 'c 'CM Plot ^to t Tstg Ti °c °c ^ th j mb = 424 September 1994 Silicon planar epitaxial power transistors BD839 BD841 BD843 -
OCR Scan
BD843/BD844 7Z82555
Abstract: BD839 BD841 BD843 JV SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon , emitter) BD841 BD843 VcBO max. 45 60 100 VcEO max. 45 60 80 V V , . bb53T31 0D3MMtm 'JbT Y Marclr1981 7757 253 BD839 BD841 BD843 J V RATINGS Limiting values in accordance w ith the Absolute Maximum System (IE C 134) BD839 BD841 BD843 max. 45 , 62,5 K/W = 12,5 K/W BD839 BD841 BD843 Silico n planar epitaxial power transistors -
OCR Scan
8D844 53T31 0Q344T1 S3T31 0034S00 00345D1
Abstract: yv BD 839 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors , . P-N-P complements are BD840, BD842 and BD844. QUICK REFERENCE DATA BD839 BD841 BD843 , â  This Material Copyrighted By Its Respective Manufacturer BD 839 BD841 BD843 RATINGS , BD 839 BD841 BD843 Collector cut-off current 'E-0;VCB«30V 'cbo < 100 nA lE-0;VCB = 30V;Tj , gain ratio of bd839/bd840, bd841/bd842, bd843/bd844 hFEl/hFE2 typ. 1,3 | 'C | = 150 m A; |VCE| = -
OCR Scan
7Z82989 7Z82991 7Z82984 S3131 7Z82982 00345G1
Abstract: BD840 BD842 _I I BD844 PHILIPS INTERNATIONAL SbE 7 â  1 OflE!b D043D7b ^â P'HIN T-33- i T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843. QUICK REFERENCE DATA BD840 BD 842 BD844 , of BD839/BD840, BD841/BD842, BD843/BD844 hFEl/hFE2 typ. 1,3 |IC| = 150 mA; |VCE j = 2 V < 1,6 -
OCR Scan
FL110 B0844 3317 fhilips B0840 MAX15062 D043D7 DDM3G37 T-33-17 7Z82990 DD430H2 7Z82988
Abstract:  BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843. QUICK REFERENCE DATA BD840 BD842 BD844 Collector-base voltage -VcBO max. 45 60 100 V Collector-emitter voltage ~vCEO max. 45 60 80 V Collector-emitter voltage (Rqe , V *T typ. 50 MHz D.C. current gain ratio of BD839/BD840, BD841/BD842, BD843/BD844 hFE1/hFE2 -
OCR Scan
lem HA 00345D2 DD345D 7Z8298S
Abstract: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843. QUICK REFERENCE DATA BD840 Collector-base voltage -V c B O Collector-emitter voltage BD842 BD844 max , , BD843/BD844 | I C | = 150m A; |V C E | - 2 V h FE1/h FE2 typ. < 1,3 1,6 25 40 to 250 25 -
OCR Scan
D34SD2 003MS04 G03MSGT
Abstract: Philips Semiconductors Replacement list REPLACEMENT/WITHDRAWAL TYPES Selection guide The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER 2N2297 2N2483 2N2904; 2N2904A 2N3020 2N3053 2N3439; 2N3440 2N4030 ; 2N4032 2N4123 2N4125 2N4400 2N4402 2N930 2P81219 2PB709 2PB710 2PC1815L 2PD601 2PD602 BBC 178; BC179 BC375 BC376 BCF70 BCV64 BCX58; BCX59 BCX78; BCX79 BCY56; BCY57 BCY65 BCY72 BD136-6, BD138-6, BD140-6 BD827 BD839; BD841 ; BD843 -
OCR Scan
2N4033 BC107B 2PC1815 P2T2907 mps6514 replacement replacement BC107 bsx45 replacement 2n2222a REPLACEMENT replacement of 2N3053 BC109C replacement BDX46 BF198 BF241 BF451 BF484 BF584
Abstract: ; BD138; BD140 BD827 Replaced by BD829 BD839; BD841; BD843 Replaced by TO126 BD226; BD228 Philips Semiconductors
Original
2N4124 bc548 bcy71 replacement 2n3053 replacement 2N4126 bc548 2n3019 equivalent BC109C datasheet 2N3019 2N2484 2N2905A BSX45 MPSA44 MPSA45
Abstract: 500 250 50 TO-202 BD843 100 80 5.0 25 25 40 250 5.0 1000.0 150.0 2 2 2 1000 125 TO -
OCR Scan
2SC2068 2SC2068R 2SC2068Y BF859 CSC2611 CSC2621 bd817 B0815 B0817 CSC2621D 2SC20680
Abstract: 500 250 50 TO-202 BD843 100 80 5.0 25 25 40 250 5.0 1000.0 150.0 2 2 2 1000 125 TO -
OCR Scan
CSC2621E BF858 csc2821c CSC282 TO-202 CSC2821C BF857 CSC1212A BD81S
Abstract: 30 25 40 25 100 BD843 80 5.0 40 250 60 200 80 80 5.0 50 -
OCR Scan
CSC2621C 2SC20S8Y CSC1212B BD815 CSC1212C BD825
Abstract: BD 643. BD 645, BD647. BD 649 DC current gain hfs - fife) VcE = 3 V; Tax, = 25 °C BD843 -
OCR Scan
Q62702-D229 Q62702-D235 Q62702-D231 Q62702-D236 Q62702-D233 J50J1 BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 23SLQS T-33-29 643/BD 645/BD 647/BD 649/BD
Abstract: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P N-P silicon transistors, in a plastic T 0 -2 0 2 package, recom m ended fo r use in television circuits and audio applications. N-P-N com plem ents are BD 839, BD841 and BD843. QUICK REFERENCE DATA BD840 Collector-base voltage C o lle c to r-e m itte r voltage C o lle c to r-e m itte r voltage (R g g = 1 k i i ) Em itter-base voltage C o lle ctor c u rre n t (peak value) T otal pow er dissipation Tgm b = °C (free air) T m b = 25 -
OCR Scan
Abstract: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D â  7110fl2b 00M303L. 34T « P H I N T3- T -3l SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD 839, BD841 and BD843. Q U IC K R E F E R E N C E D A T A BD840 Collector-base voltage BD842 BD844 45 60 ~ v CBO max. 100 V Collector-em itter voltage -
OCR Scan
d844 Transistors BD 330 GGM3G37 43DM2 DPM3043
Abstract: BD230 BD231 BD329 BD330 BD825 BD826 BD827 BD828 BD829 BD830 BD839 BD840 BD841 BD842 BD843 BD844 BDP31 -
OCR Scan
2PA733P 2PA1015L 2PC945K 2PC945P 2PC945Q 2n2222 -331 transistors 2n2222 -331 2N2222A 331 2n2222 a 331 2n2222 331 transistors 2n2222 331 BC107 BC107A BC108 BC108A BC108B BC108C
Abstract: BD825 BD827 BD829 BD839 BD841 BD843 BDX35 BDX36 BDX37 BDX42 BDX43 BDX44 PNP BD132 BD136 BD138 BD140 -
OCR Scan
BC337 BC550 JC337A 2n2222 h 331 transistors PNP 2n3906 331 2n2222 - 331 2n2222 2n5401 2n5551 Philips Semiconductors Selection Guide BC109 BC140 BC141 BC337A BC338
Abstract: BD827 BD828 BD829 BD830 BD839 BD840 BD841 BD842 BD843 BD844 BD933 B0933F BD934 BD934F BD935 BD935F BD936 -
OCR Scan
BA583 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BA220 BA221 BA223 BA281 BA314 BA315
Abstract: BD830 BD839 BD840 BD841 BD842 BD843 BD844 BD933 BD933F BD934 D D S D S D S D D D -
Original
TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 2N109 2N1304 2N1305 2N1307 2N1613 2N1711
Showing first 20 results.