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BD843 Datasheet

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BD843 N/A Shortform Transistor PDF Datasheet
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1 pages,
163.63 Kb

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BD843 N/A Cross Reference Datasheet
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1 pages,
35.36 Kb

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BD843 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
94.56 Kb

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BD843 N/A Shortform Data and Cross References (Misc Datasheets)
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1 pages,
33.83 Kb

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BD843 Continental Device India Limited TO-202 NPN Plastic Package Transistors
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2 pages,
66.23 Kb

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BD843 Philips Semiconductors / NXP Semiconductors Silicon Planar Epitaxial Power Transistors
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8 pages,
213.59 Kb

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BD843

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Abstract: BD839 BD839 BD841 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a , V M E C H A N IC A L D A T A 10, U max 0,5 BD841 BD841 60 60 60 3 2 10 150 25 125 BD843 100 80 100 , ) Plastic flash allowed w ith in this zone. September 1994 423 BD839 BD839 BD841 BD841 BD843 RATINGS Lim , to + 150 max. 150 BD843 100 80 100 5 V V V V A A W W 'c 'CM Plot ^to t Tstg Ti °c °c ^ th j mb = 424 September 1994 Silicon planar epitaxial power transistors BD839 BD839 BD841 BD841 BD843 ... OCR Scan
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6 pages,
125.13 Kb

BD839 BD841 BD843 BD840 BD842 BD844 BD839 abstract
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Abstract: BD839 BD839 BD841 BD841 BD843 PHILIPS INTERNATIONAL SbE J> - 7110fl2b 0043025 273 «PHIN T-3Z-05- T-3Z-05- SILICON , QUICK REFERENCE DATA BD839 BD839 BD841 BD841 BD843 Collector-base voltage (open emitter) vCBO max. 45 60 100 V , BD841 BD841 BD843 PHILIPS INTERNATIONAL SbE T> - RATINGS Limiting values in accordance with the Absolute , air From junction to mounting base BD839 BD839 BD841 BD841 BD843 vCBO max. 45 60 100 V vCEO max. 45 60 80 , IC = 50 mA; VCE = 5 V D.C. current gain ratio of BD839/BD840 BD839/BD840, BD841/BD842 BD841/BD842, BD843/BD844 | lC |-150 mA ... OCR Scan
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8 pages,
220.36 Kb

IEC134 BD844 BD843 BD842 BD841 BD840 BD839 J 3305 BD839 abstract
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Abstract: yv BD 839 BD841 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in , complements are BD840 BD840, BD842 BD842 and BD844 BD844. QUICK REFERENCE DATA BD839 BD839 BD841 BD841 BD843 Collector-base voltage , Copyrighted By Its Respective Manufacturer BD 839 BD841 BD841 BD843 RATINGS Limiting values in accordance with , transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. J V BD 839 BD841 BD841 BD843 Collector , , bd843/bd844 hFEl/hFE2 typ. 1,3 | 'C | = 150 m A; |VCE| = 2V < 1.6 * VgE decreases by about 2,3 mV/K ... OCR Scan
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8 pages,
213.59 Kb

BD844 BD843 BD842 BD839 BD841 BD840 T0-202 BD839 abstract
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Abstract: ; BD138 BD138; BD140 BD140 BD827 BD827 Replaced by BD829 BD829 BD839 BD839; BD841 BD841; BD843 Replaced by TO126 BD226 BD226; BD228 BD228 ... Original
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1 pages,
4.03 Kb

bc107 transistor bf241 2N3053 equivalent 2n4126 replacement semiconductors replacement guide transistor 2n3053 2N3440 REPLACEMENT BD827 BCY56 transistor BF451 2n4125 equivalent BC109C datasheet 2n2222a REPLACEMENT 2N2297 2N2483 2N2297 abstract
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Abstract: BD840 BD840 BD842 BD842 _I I BD844 BD844 PHILIPS INTERNATIONAL SbE 7 - 1 OflE!b D043D7b ^-P'HIN T-33- T-33- i T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T0-202 T0-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839 BD839, BD841 BD841 and BD843. QUICK REFERENCE DATA BD840 BD840 BD 842 BD844 BD844 Collector-base voltage , of BD839/BD840 BD839/BD840, BD841/BD842 BD841/BD842, BD843/BD844 hFEl/hFE2 typ. 1,3 |IC| = 150 mA; |VCE j = 2 V < 1,6 ... OCR Scan
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8 pages,
220.38 Kb

BD841 BD842 BD843 IEC134 B0840 BD839 BD844 B0844 BD840 BD840 abstract
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Abstract: BD840 BD840 BD842 BD842 BD844 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T0-202 T0-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839 BD839, BD841 BD841 and BD843. QUICK REFERENCE DATA BD840 BD840 BD842 BD842 BD844 BD844 Collector-base voltage -VcBO max. 45 60 100 V Collector-emitter voltage ~vCEO max. 45 60 80 V Collector-emitter voltage (Rqe , 50 MHz D.C. current gain ratio of BD839/BD840 BD839/BD840, BD841/BD842 BD841/BD842, BD843/BD844 hFE1/hFE2 typ. 1,3 ... OCR Scan
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8 pages,
212.76 Kb

lem HA BD843 BD841 BD839 BD844 BD842 BD840 T0-202 BD840 abstract
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Abstract: Philips Semiconductors Replacement list REPLACEMENT/WITHDRAWAL TYPES Selection guide The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER 2N2297 2N2297 2N2483 2N2483 2N2904 2N2904; 2N2904A 2N2904A 2N3020 2N3020 2N3053 2N3053 2N3439 2N3439; 2N3440 2N3440 2N4030 2N4030 ; 2N4032 2N4032 2N4123 2N4123 2N4125 2N4125 2N4400 2N4400 2N4402 2N4402 2N930 2N930 2P81219 2P81219 2PB709 2PB709 2PB710 2PB710 2PC1815L 2PC1815L 2PD601 2PD601 2PD602 2PD602 BBC 178; BC179 BC179 BC375 BC375 BC376 BC376 BCF70 BCF70 BCV64 BCV64 BCX58 BCX58; BCX59 BCX59 BCX78 BCX78; BCX79 BCX79 BCY56 BCY56; BCY57 BCY57 BCY65 BCY65 BCY72 BCY72 BD136-6 BD136-6, BD138-6 BD138-6, BD140-6 BD140-6 BD827 BD827 BD839 BD839; BD841 BD841 ; BD843 ... OCR Scan
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2 pages,
70.3 Kb

BC107 replacement 2N4124 bc548 2n2297 2n2222a smd BD136 smd P2T2907 replacement of 2N3053 p2t* smd Philips Semiconductors Selection Guide 2n4126 replacement SMD BC547 bd138 smd bc558 SMD datasheet abstract
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Abstract: 250 50 TO-202 BD843 100 80 5.0 25 25 40 250 5.0 1000.0 150.0 2 2 2 1000 125 TO-202 CSC1212A CSC1212A 80 ... OCR Scan
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2 pages,
66.23 Kb

TO-202 2SC2068R 2SC2068Y B0817 BF858 BF859 CSC2611 CSC2621 CSC2621D CSC2621E CSC282 csc2821c 2SC2068 bd817 B0815 datasheet abstract
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Abstract: 250 50 TO-202 BD843 100 80 5.0 25 25 40 250 5.0 1000.0 150.0 2 2 2 1000 125 TO-202 CSC1212A CSC1212A 80 ... OCR Scan
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2 pages,
66.87 Kb

CSC2621E 2SC2068R 2SC2068Y BF858 BF859 CSC2611 CSC2621 CSC2621D 2SC2068 B0817 B0815 bd817 datasheet abstract
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Abstract: BD840 BD840 BD842 BD842 BD844 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P N-P silicon transistors, in a plastic T 0 -2 0 2 package, recom m ended fo r use in television circuits and audio applications. N-P-N com plem ents are BD 839, BD841 BD841 and BD843. QUICK REFERENCE DATA BD840 BD840 Collector-base voltage C o lle c to r-e m itte r voltage C o lle c to r-e m itte r voltage (R g g = 1 k i i ) Em itter-base voltage C o lle ctor c u rre n t (peak value) T otal pow er dissipation Tgm b = °C (free air) T m b = 25 ... OCR Scan
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6 pages,
128.63 Kb

BD840 BD842 BD844 BD841 BD843 BD840 abstract
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Abstract: Q62901-B65 649 DC current gain hfs - fife) VcE = 3 V; Tax, = 25 °C BD843, BD645 BD645.BD647 BD647, BD649 BD649 104 IO3 10' t ... OCR Scan
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4 pages,
126.38 Kb

B0645 BD645 d237 B0643 J50J1 Q62702-D231 Q62702-D233 Q62702-D236 Q62702-D237 BD 104 BD 650 Q62702-D235 BD 649/BD 650 Q62702-D229 darlington bd 645 datasheet abstract
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Shortform Datasheet Search Results

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BD843 N/A Si NPN Power HF BJT

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BD843 N/A Silicon NPN

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