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BD645 Datasheet

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BD645 N/A Basic Transistor and Cross Reference Specification
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54.11 Kb

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BD645 N/A Transistor Replacements
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78.66 Kb

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BD645 N/A Shortform Transistor PDF Datasheet
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1 pages,
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BD645 N/A Transistor Replacements
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BD645 N/A Shortform Transistor PDF Datasheet
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1 pages,
162.39 Kb

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BD645 N/A Cross Reference Datasheet
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36 Kb

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BD645 N/A Transistor Replacements
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1 pages,
85.7 Kb

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BD645 N/A Transistor Replacements
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77.46 Kb

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BD645 N/A Transistor Replacements
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1 pages,
61.81 Kb

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BD645 N/A Transistor Replacements
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1 pages,
69.02 Kb

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BD645

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Abstract: Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 Collector-Base Voltage VCEO Value Collector , Temperature range BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD643 BD643 BD645 BD647 BD647 BD649 BD649 BD651 BD651 Unit 150 mA 62.5 Watts 150 °C -65 to ... Original
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5 pages,
339.15 Kb

BD652 BD650 BD649 equivalent BD644 BD648 BD646 BD651 bd650 bd649 darlington bd647 BD643 bd647 BD649 BD645 BD643/645/647/649/651 BD643/645/647/649/651 abstract
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Abstract: SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power , Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BD645 VCBO , BD645 VCEO UNIT 80 100 V 120 Open collector 5 V Collector current-DC 8 A , TC=25 SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD645 ... Original
datasheet

4 pages,
112.41 Kb

BD651 IC 651 BD647 BD645 BD649 BD646/648/650/652 BD646/648/650/652 abstract
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Abstract: Transistore File Number 1241 BD643 BD643, BD645, BD647 BD647, BD649 BD649 8-Ampere N-P-N Darlington Power Transistors , and shunt regulators - Audio amplifiers (FLANGE) JEDEC TO-22QAB The RCA-BD643 RCA-BD643, BD645, BD647 BD647, and , max. BD643 BD643 BD645 BD647 BD647 BD649 BD649 45 60 80 100 V 45 60 80 100 V K v A A A A W W/«C •c 19 n , BD643 BD643, BD645, BD647 BD647, BD649 BD649 ELECTRICAL CHARACTERISTICS, Case Temperature (Tq) Unless Otherwise Specified CHARACTERISTIC TEST CONDITIONS -r LIMITS UNITS VOLTAGE Vdc CURRENT Adc BD643 BD643 BD645 VCB vce VBE ... OCR Scan
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4 pages,
128.98 Kb

n69s darlington bd647 BD643 B13 transistors BD647 BD645 BD649 datasheet abstract
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Abstract: BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ratings at 25癈 case temperature (unless otherwise noted) RATING SYMBOL VALUE BD645 , NOITAMROFNI NOTES: 1. 2. 3. 4. V 140 BD645 Collector-emitter voltage (IB = 0) UNIT , BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25癈 case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 Collector-emitter BD647 BD647 ... Original
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5 pages,
81.75 Kb

BD645 BD652 BD651 BD650 bd648 BD646 bd645 transistor BD649 transistor bd647 BD647 BD648 BD645 abstract
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Abstract: BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ratings at 25癈 case temperature (unless otherwise noted) RATING SYMBOL VALUE BD645 , NOITAMROFNI NOTES: 1. 2. 3. 4. V 140 BD645 Collector-emitter voltage (IB = 0) UNIT , BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25癈 case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 Collector-emitter BD647 BD647 ... Original
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4 pages,
61.44 Kb

transistor bd647 BD652 BD651 Bd645 equivalent BD650 BD646 BD647 BD648 BD649 BD649 equivalent bd650 bd649 BD645 BD645 abstract
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Abstract: File Num ber 1241 BD643 BD643, BD645, BD647 BD647, BD649 BD649 8-Ampere N-P-N Darlington Power Transistors , , BD645, BD647 BD647, and BD649 BD649 are m onolithic silicon n-p-n D arlington transistors designed fo r low and m , . T c > 2 5 °C . 45 45 BD645 60 60 s R , . c 235 "C 2-260 BD643 BD643, BD645, BD647 BD647, BD649 BD649 ELECTRICAL CHARACTERISTICS, At Case , H CUR RENT Ade BD643 BD643 Min. - Max. LIMITS BD645 Min. Max. UNITS VCE 20 30 VBE c 0.5 0.2 2 ... OCR Scan
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3 pages,
95.24 Kb

tic 2260 lg bd645 darlington bd647 BD643 BD645 BD647 BD649 BD643 abstract
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Abstract: BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , temperature (unless otherwise noted) RATING SYMBOL BD645 Collector-base voltage (IE = 0) BD647 BD647 , NOTES: 1. 2. 3. 4. V 140 BD645 Collector-emitter voltage (IB = 0) UNIT 80 -65 to , include testing of all parameters. 1 BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS MAY , noted) PARAMETER TEST CONDITIONS MIN BD645 MAX 80 BD649 BD649 100 BD647 BD647 0.5 ... Original
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6 pages,
114.97 Kb

BD652 BD651 BD650 BD648 BD646 BD645 BD649 equivalent BD649 BD647 BD645 abstract
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Abstract: J PHILIPS INTERNATIONAL SbE D BD643 BD643; BD645; BD647 BD647; BD649 BD649; BD651 BD651 _ m 7110fi2b , August 1991 213 BD643 BD643; BD645; BD647 BD647; BD649 BD649; BD651 BD651 PHILIPS INTERNATIONAL 5bE D 711Dfl2b ODMS'IS? , 0; V CB = 1 / 2 V CB0 max; Tj = 150 °C 5bE D BD643 BD643; BD645; BD647 BD647; BD649 BD649; BD651 BD651_ 711002b 0042 , current gain ratio o f matched pairs at V q E = 3 V Iq = 4 A BD643/BD644 BD643/BD644 Iq = 3 A BD645/BD646 Diode , ; BD645; BD647 BD647; BD649 BD649; BD651 BD651 / PHILIPS INTERNATIONAL Switching times (see Figs 4 and 5) I q = 3 A ... OCR Scan
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10 pages,
396.75 Kb

bd645 transistor transistor BD6 BD643 BD645 BD647 BD649 BD651 BD643 abstract
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Abstract: BD643 BD643; BD645; BD647 BD647; BD649 BD649; BD651 BD651 PHILIPS INTERNATIONAL 5bE D - 7110fl2b 0042^ 741 «RHIN , BD643 BD643; BD645; BD647 BD647; BD649 BD649; BD651 BD651 PHILIPS INTERNATIONAL n L. SbE D R1 711D-2b ODMSIS? bflâ MPHIN , gain ratio of matched pairs at VqE = 3 V IC = 4A BD643/BD644 BD643/BD644 lc = 3A BD645/BD646 Diode forward , load; Iq = 4.5 A (see Fig. 3) 5bE T> 'CBO BD643 BD643; BD645; BD647 BD647; BD649 BD649; RD651 RD651_ 711002b , Copyrighted By Its Respective Manufacturer BD643 BD643; BD645; BD647 BD647; BD649 BD649; BD651 BD651 / \ PHILIPS INTERNATIONAL ... OCR Scan
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10 pages,
233.06 Kb

b0651 BD643 BD644 BD646 BD647 BD648 BD649 a 741 j bd649 PNP transistor BD650 BD651 BD652 transistor bd647 transistor bd646 philips TRANSISTORS 1968 BD643 abstract
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Abstract: BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD645 Collector-base voltage ( lE = 0) BD647 BD647 BD649 BD649 BD651 BD651 BD645 Collector-em itter voltage ( lB = 0 , all parameters. BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS M AY 1993 - REVISED , TEST CONDITIONS BD645 Collector-em itter V (BR)CEO MIN 60 80 100 120 TYP MAX UNIT , > 30 V lB = 0 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD645 BD647 BD647 BD649 BD649 BD651 BD651 Tc Tc Tc = = = 0.5 0.5 0.5 0.5 ... OCR Scan
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6 pages,
206.12 Kb

bd649 BD645 BD647 BD649 BD651 BD646 BD648 BD650 BD652 BD645 abstract
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Abstract: w BD 643 • BD 645 • BD 647 • BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: • Hohe Sperrspannung • Sehr hohe Stromverstärkung • Verlustleistung 62,5 W • Glaspassivierung • BD 643, BD 645, BD 647, BD 649 sind komplementär zu BD 644, BD 646, BD 648, BD 650 Features: • High reverse voltage • Very high current transfer ratio 0 Power dissipation 62,5 W • Glass pa ... OCR Scan
datasheet

4 pages,
69.07 Kb

BD 647 BD 643 BD 644 BD 645 B0647 b 647 c BD 650 BD NPN transistors BO 648 BO 649 B0649 b 647 a c B0645 B0643 BD 649 datasheet abstract
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Abstract: Q62901-B65 dissipation versus temperature Plot =1 iTaui: Vce = parameter BD643 BD643, BD645, BD647 BD647, BD649 BD649 111 V[E=0 (0 20V , AKTIENGESELLSCHAF Collector current Ic = t (VeE) Vce = 3 V; Taj, = 25°C BD643 BD643, BD645, BD647 BD647, BD649 BD649 10' 0 1 2 3V , = 25 °C mA BD643 BD643, BD645, BD647 BD647, BD649 BD649 436 1813 D-02 ... OCR Scan
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4 pages,
126.38 Kb

2SC 645 B0645 BD645 d237 B0643 J50J1 Q62702-D231 BD 104 Q62702-D237 Q62702-D236 Q62702-D233 Q62702-D235 BD 650 BD 649/BD 650 Q62702-D229 datasheet abstract
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Abstract: - 25C D 0235bQS 00043"7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 ° BD 643 BD 645 BD 647 BD 649 Epibase power darlington transistors (62.5W) BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting area. These darlington transistors for AF app ... OCR Scan
datasheet

4 pages,
238.99 Kb

TOP-66 b 647 c T-33-29 643/BD 645/BD 647/BD 649/BD T-33-29 abstract
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Abstract: 17273 ~ _ Darlington Power Transistore File N um ber 1241 BD643 BD643, BD645 , plifiers JEDEC TO-220AB Qc The RCA-BD643 RCA-BD643, BD645, BD647 BD647, and BD649 BD649 are m o n o lith ic s ilic o n , types. M A X IM U M R A T IN G S , A b s o lu te -M a x im u m V a lu e s: BD643 BD643 BD645 60 60 > ; A , _ B0643 B0643, BD645, BD647 BD647, BD649 BD649 E L E C T R IC A L C H A R A C T E R IS T IC S , A t C ase T e m p , .T LIMITS BD643 BD643 Min. - - Max. 0.5 0.2 2 BD645 Min. Max. 0.5 0.2 2 2 - - V I mA UNITS CUR RENT ... OCR Scan
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4 pages,
202.97 Kb

B0643 datasheet abstract
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Abstract: BD645 Cottector-base voltage (lE = o) BD647 BD647 BD649 BD649 BÛ651 B0645 B0645 BD647 BD647 BD649 BD649 BD651 BD651 Emitter-base voltage , aB parameters. INNOVATIONS 3-3 BD645, BD647 BD647, BD649 BD649, BD651 BD651 NPN SILICON POWER DARLINGTONS MAY , noted) P A RA M ET ER Cotteclor-emitter breakdown voftage TEST CONDITIONS 80645 BD647 BD647 BD649 BD649 BD651 BD651 BD645 BD647 BD647 BD649 BD649 BD651 BD651 BD645 BD647 BD647 BD649 BD649 BD651 BD651 Tc = 150°C Tc a ISO^C Tc = 150' C Tc = 150°C (see Notes 5 and , 2.5 V V V BD645 B0647 B0647 BD649 BD649 BD651 BD651 MIN 60 80 100 120 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2.0 2.0 2.0 2.0 5 ... OCR Scan
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4 pages,
157.97 Kb

bd649 B0647 B0645 BD647 BD649 BD651 DARUNG70NS BD646 BD648 BD650 BD652 BD647 abstract
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BD538 BD538 BD538 BD538 BD643 BD643 BD643 BD643 BDX53B BDX53B BDX53B BDX53B BD644 BD644 BD644 BD644 BDX54B BDX54B BDX54B BDX54B BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646
www.datasheetarchive.com/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/bipcros2.htm
STMicroelectronics 28/06/2000 112.56 Kb HTM bipcros2.htm
BD538 BD538 BD538 BD538 BD643 BD643 BD643 BD643 BDX53B BDX53B BDX53B BDX53B BD644 BD644 BD644 BD644 BDX54B BDX54B BDX54B BDX54B BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646
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STMicroelectronics 14/06/1999 112.29 Kb HTM bipcros2-v2.htm
BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646 BDX54B BDX54B BDX54B BDX54B BD647 BD647 BD647 BD647 BDX53B BDX53B BDX53B BDX53B BD648 BD648 BD648 BD648
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STMicroelectronics 20/10/2000 118.05 Kb HTM bipcros2-v1.htm
BD644 BD644 BD644 BD644 BDX54B BDX54B BDX54B BDX54B BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646 BDX54B BDX54B BDX54B BDX54B BD647 BD647 BD647 BD647 BDX53B BDX53B BDX53B BDX53B BD648 BD648 BD648 BD648 BDX54B BDX54B BDX54B BDX54B BD649 BD649 BD649 BD649 BDX53C BDX53C BDX53C BDX53C BD650 BD650 BD650 BD650 BDX54C BDX54C BDX54C BDX54C
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STMicroelectronics 14/06/1999 194.65 Kb HTM 3649-v2.htm
BD643 BD643 BD643 BD643 BDX53B BDX53B BDX53B BDX53B BD644 BD644 BD644 BD644 BDX54B BDX54B BDX54B BDX54B BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646 BDX54B BDX54B BDX54B BDX54B BD647 BD647 BD647 BD647 BDX53B BDX53B BDX53B BDX53B BD648 BD648 BD648 BD648 BDX54B BDX54B BDX54B BDX54B BD649 BD649 BD649 BD649 BDX53C BDX53C BDX53C BDX53C
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STMicroelectronics 25/05/2000 61.07 Kb HTM 3649-v3.htm
BD644 BD644 BD644 BD644 BDX54B BDX54B BDX54B BDX54B BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646 BDX54B BDX54B BDX54B BDX54B BD647 BD647 BD647 BD647 BDX53B BDX53B BDX53B BDX53B BD648 BD648 BD648 BD648 BDX54B BDX54B BDX54B BDX54B BD649 BD649 BD649 BD649 BDX53C BDX53C BDX53C BDX53C BD650 BD650 BD650 BD650 BDX54C BDX54C BDX54C BDX54C
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STMicroelectronics 02/04/1999 232.33 Kb HTM 3649-v1.htm
BD643 BD643 BD643 BD643 BDX53B BDX53B BDX53B BDX53B BD644 BD644 BD644 BD644 BDX54B BDX54B BDX54B BDX54B BD645 BDX53B BDX53B BDX53B BDX53B BD646 BD646 BD646 BD646 BDX54B BDX54B BDX54B BDX54B BD647 BD647 BD647 BD647 BDX53B BDX53B BDX53B BDX53B BD648 BD648 BD648 BD648 BDX54B BDX54B BDX54B BDX54B BD649 BD649 BD649 BD649 BDX53C BDX53C BDX53C BDX53C BD650 BD650 BD650 BD650
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STMicroelectronics 20/10/2000 64.89 Kb HTM 3649.htm
description: "awbbd645" *a Device model created by analog_uprev for bd645 on Sun Feb 4 09:49:44 IST 2001
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Spice Models 26/03/2008 43.75 Kb LIB bjnd.lib
OPERATIONAL AMPLIFIERS 179 4024 TSH150CN TSH150CN TSH150CN TSH150CN OPA620KP OPA620KP OPA620KP OPA620KP Replacement VOLTAGE REGULATORS 200 2149 L7912CV L7912CV L7912CV L7912CV TA79012P TA79012P TA79012P TA79012P Replacement VOLTAGE REGULATORS 200 2149 L7912CV L7912CV L7912CV L7912CV TA79012P TA79012P TA79012P TA79012P Replacement Power Bipolar 228 5069 2N4920 2N4920 2N4920 2N4920 2N6556 2N6556 2N6556 2N6556 Nearest Preferred Power Bipolar 225 5288 BU941ZT BU941ZT BU941ZT BU941ZT BU941ZT BU941ZT BU941ZT BU941ZT Replacement OPERATIONAL AMPLIFIERS 179 2472 TSH10IN TSH10IN TSH10IN TSH10IN EL2044CN EL2044CN EL2044CN EL2044CN Replacement Power Bipolar 228 4126 TIP115 TIP115 TIP115 TIP115 MJE700T MJE700T MJE700T MJE700T Nearest Preferred Power Bipolar 224 1021 BUL216 BUL216 BUL216 BUL216 KSC5027 KSC5027 KSC5027 KSC5027 Nearest Preferred Power Bipolar 227 5989 BUX48A BUX48A BUX48A BUX48A BUW46 BUW46 BUW46 BUW46 Nearest P
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STMicroelectronics 30/03/1999 445.18 Kb TXT xref.txt
SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P2M 03P2M 03P2M 03P2M Replacement NEC SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 6630 X00602MA X00602MA X00602MA X00602MA 03P4M 03P4M 03P4M 03P4M Replacement NEC SENSITIVE GATE SCR SENSITIVE GATE SCRs SCRs 257 7482 P0111DA P0111DA P0111DA P0111DA 03P4MF 03P4MF 03P4MF 03P4MF Replacement NEC 0.8A SCRS SENSITIVE GATE SCRs SCRs 257 7482 P0111DA P0111DA P0111DA P0111DA 03P4MG 03P4MG 03P4MG 03P4MG Replacement NEC 0.8A SCRS SENSITIVE GATE SCRs SCRs 257 7480 X0205MA X0205MA X0205MA X0205MA 03P6MG 03P6MG 03P6MG 03P6MG Replacement NEC 1.25A SCRS SENSITIVE GATE SCRs 5067 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 M24C01-RBN6 24AA01-I/P 24AA01-I/P 24AA01-I/P 24AA01-I/P Replacement MICROCHIP 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K 16K/8K/4K/2K/1K SERIAL I 2 C BUS EEPROM 5067
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STMicroelectronics 31/01/2001 1362.78 Kb TXT xref-v4.txt

Shortform Datasheet Search Results

Part Manufacturer Description Shortform Datasheet Ordering
BD645 N/A Silicon NPN Darlington Diode

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BD645 N/A Darlington, Power

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BD645/646 N/A Complementary Monolithic Transistor Pair - Comp-pair,darlington

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BD645F N/A NPN Darlington Transistor

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BD645F N/A Silicon NPN Darlington Diode

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Fairchild Cross Reference Results

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NTE263 Buy BD645 Buy
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On Semiconductor Cross Reference Results

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2N6043G Buy BD645 Buy Advanced Semiconductor Close
TIP100G Buy BD645 Buy Advanced Semiconductor Close

STMicroelectronics Cross Reference Results

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BDX53B Buy BD645 Buy - Nearest Preferred Power Bipolar

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