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Part : BD64550EFVE2 Supplier : ROHM Manufacturer : Chip1Stop Stock : 50 Best Price : $14.40 Price Each : $17.00
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Part : LPC11E36FBD64/501E Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : 83 Best Price : £2.48 Price Each : £3.83
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BD645 Datasheet

Part Manufacturer Description PDF Type
BD645 Bourns NPN SILICON POWER DARLINGTONS Original
BD645 Comset Semiconductors Silicon NPN Darlington Power Transistors Original
BD645 Philips Semiconductors Silicon Darlington Power Transistor Original
BD645 Power Innovations NPN SILICON POWER DARLINGTON Original
BD645 General Electric 8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. Scan
BD 645 Infineon Technologies TRANS DARLINGTON NPN 60V 8A 3TO-220AB Scan
BD645 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD645 Mullard Quick Reference Guide 1977/78 Scan
BD645 N/A Basic Transistor and Cross Reference Specification Scan
BD645 N/A Transistor Replacements Scan
BD645 N/A Shortform Transistor PDF Datasheet Scan
BD645 N/A Transistor Replacements Scan
BD645 N/A Shortform Transistor PDF Datasheet Scan
BD645 N/A Cross Reference Datasheet Scan
BD645 N/A Transistor Replacements Scan
BD645 N/A Transistor Replacements Scan
BD645 N/A Transistor Replacements Scan
BD645 N/A Transistor Replacements Scan
BD645 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD645 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BD645

Catalog Datasheet MFG & Type PDF Document Tags

BD649

Abstract: BD645 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE BD645 , . NOITAMROFNI NOTES: 1. 2. 3. 4. V 140 BD645 Collector-emitter voltage (IB = 0) UNIT , BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 Collector-emitter BD647
Bourns
Original
BD646 BD648 BD650 BD652 BD649 equivalent bd650 bd649 transistor bd645 transistor bd647 TCS130AB TCS130AC

lg bd645

Abstract: BD649 philips BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D â  7110fl2b 0042^ 741 «RHIN , ; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL n L. SbE D R1 711DÃ2b ODMSIS? bflâ MPHIN T , gain ratio of matched pairs at VqE = 3 V IC = 4A BD643/BD644 lc = 3A BD645/BD646 Diode forward , load; Iq = 4.5 A (see Fig. 3) 5bE T> 'CBO BD643; BD645; BD647; BD649; RD651_ 711002b , Material Copyrighted By Its Respective Manufacturer BD643; BD645; BD647; BD649; BD651 / \ PHILIPS
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BD644 lg bd645 BD649 philips darlington bd 645 bd649 PNP transistor B0645 transistor D 649 T0-220 T-33-29 IEC134

BD645

Abstract: bd647 Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Collector-Base Voltage VCEO Value Collector , Temperature range BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Unit 150 mA 62.5 Watts 150 °C -65 to
Comset Semiconductors
Original
darlington bd647 IC 651 BD643/645/647/649/651

BD651

Abstract: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN , August 1991 bbS3T31 00343*34 Tfil 213 BD643; BD645; BD647; BD649; BD651 J V R1 typ , ; BD645; BD647; BD649; BD651_ Silicon Darlington power transistors J CHARACTERISTICS Tj = , /BD644 1C = 3 A BD645/BD646 max. max. 2.5 - _ _ hF E l/hFE2 2.5 2.5 Diode , bbS3T31 â¡ 0 3 4 3 c flSl lb f Z 1988 215 BD643; BD645; BD647; BD649; BD651 Switching
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S3T31 D034401 00344D2

BD647

Abstract: transistor bd647 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE BD645 , . NOITAMROFNI NOTES: 1. 2. 3. 4. V 140 BD645 Collector-emitter voltage (IB = 0) UNIT , BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD645 Collector-emitter BD647
Bourns
Original
bd645 transistor TIS130AC

BD649

Abstract: BD647 SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power , Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BD645 VCBO , BD645 VCEO UNIT 80 100 V 120 Open collector 5 V Collector current-DC 8 A , =25 SavantIC Semiconductor Product Specification BD645/647/649/651 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD645 V(BR)CEO
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Original
PC 649 BD645/647/649/651 BD646/648/650/652

B0645

Abstract: BD85 BD643; BD645; BD647; BD649; BD651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base , TÃ"T This Material Copyrighted By Its Respective Manufacturer BD643; BD645; BD647; BD649; BD651 V , Respective Manufacturer Silicon Darlington power transistors BD643; BD645; BD647; BD649; BD651 , VCE = 60 V DC current gain ratio of matched pairs at Vce = 3 V 'C = 4A BD643/BD644 lC = 3 A BD645 , Manufacturer BD643; BD645; BD647; BD649; BD651 Switching times (see Figs 4 and 5) lc = 3A;lBon = -lBoff=
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BD85 b0652 transistor bd646 D0344 80651 bd851 MSA060-1 0344G2 53S31
Abstract: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , 25°C case temperature (unless otherwise noted) RATING BD645 BD647 Collector-base voltage , Emitter-base voltage Continuous collector current 80 UNIT 100 120 V 140 BD645 BD647 , actual device performance in their specific applications. 1 BD645, BD647, BD649, BD651 NPN SILICON , current TEST CONDITIONS current VCE = 30 V IB = 0 BD645 IB = 0 VCE = 60 V hFE VCE Bourns
Original
SAS130AC
Abstract: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , 25°C case temperature (unless otherwise noted) RATING BD645 BD647 Collector-base voltage (IE = 0) SYMBOL V CBO E T E L O S B O BD649 BD651 BD645 Collector-emitter , . 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , = 0 BD645 IB = 0 VCE = 60 V hFE VCE(sat) VBE(sat) VBE(on) current Forward Bourns
Original
Abstract: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for , (unless otherwise noted) RATING BD645 BD647 Collector-base voltage (IE = 0) BD649 SYMBOL , Continuous collector current 80 UNIT 100 120 V 140 BD645 BD647 VALUE 60 V CEO , actual device performance in their specific applications. 1 BD645, BD647, BD649, BD651 NPN SILICON , current TEST CONDITIONS current VCE = 30 V IB = 0 BD645 IB = 0 VCE = 60 V hFE VCE Bourns
Original

bd645 transistor

Abstract: transistor BD6 J PHILIPS INTERNATIONAL SbE D BD643; BD645; BD647; BD649; BD651 _ m 7110fi2b 0042 , BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D 711Dfl2b ODMS'IS? bflB M P H I N T , CB0 max; Tj = 150 °C 5bE D BD643; BD645; BD647; BD649; BD651_ 711002b 0042*120 514 IPHIN T , 3 V Iq = 4 A BD643/BD644 Iq = 3 A BD645/BD646 Diode forward voltage lF = 3 A C ollector capacitance , increasing temperature. July 1988 215 BD643; BD645; BD647; BD649; BD651 / PHILIPS
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transistor BD6 H 649 A transistor MSA060 0042T32 7Z82902 T--33--2

bd649

Abstract: BD651 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD645 Collector-base voltage ( lE = 0) BD647 BD649 BD651 BD645 Collector-em itter voltage ( lB = 0 , all parameters. BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS M AY 1993 - REVISED , TEST CONDITIONS BD645 Collector-em itter V (BR)CEO MIN 60 80 100 120 TYP MAX UNIT , > 30 V lB = 0 BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 Tc Tc Tc = = = 0.5 0.5 0.5 0.5
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darlington bd647

Abstract: TL 2262 File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors , , BD645, BD647, and BD649 are m onolithic silicon n-p-n D arlington transistors designed fo r low and m , . T c > 2 5 °C . 45 45 BD645 60 60 s R 1 , . c 235 "C 2-260 BD643, BD645, BD647, BD649 ELECTRICAL CHARACTERISTICS, At Case , H CUR RENT Ade BD643 Min. - Max. LIMITS BD645 Min. Max. UNITS VCE 20 30 VBE c 0.5 0.2 2
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TL 2262 tic 2260 220AB

B0647

Abstract: B0645 ) RATING BD645 Cottector-base voltage (lE = o) BD647 BD649 BÛ651 B0645 BD647 BD649 BD651 Emitter-base , include testing of aB parameters. INNOVATIONS 3-3 BD645, BD647, BD649, BD651 NPN SILICON POWER , BD645 BD647 BD649 BD651 BD645 BD647 BD649 BD651 Tc = 150°C Tc a ISO^C Tc = 150' C Tc = 150°C (see Notes , 2.5 3 2.5 V V V BD645 B0647 BD649 BD651 MIN 60 80 100 120 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2.0 2.0 2.0 , "C/W 1o II o ii o ii is BD645, BD647, BD649, BD651 NPN SILICON POWER
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TAG 064 DARUNG70NS TIS13QAC

BD647

Abstract: BD651 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , temperature (unless otherwise noted) RATING SYMBOL BD645 Collector-base voltage (IE = 0) BD647 , NOTES: 1. 2. 3. 4. V 140 BD645 Collector-emitter voltage (IB = 0) UNIT 80 -65 to , include testing of all parameters. 1 BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS MAY , noted) PARAMETER TEST CONDITIONS MIN BD645 MAX 80 BD649 100 BD647 0.5
Power Innovations
Original

BD645

Abstract: BD649 Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power , RCA-BD643, BD645, BD647, and BD649 are monolithic silicon n-p-n Darlington transistors designed for low-and , /8 In. (3.17 mm) from case lor 10 s max. BD643 BD645 BD647 BD649 45 60 80 , ~sTÃ'TE " 01E17274' D 'T" 33""2-7 Darlington Power Transistors_ BD643, BD645, BD647, BD649 ELECTRICAL , UNITS VOLTAGE Vdc CURRENT Adc BD643 BD645 VCB vce VBE 'C Min. Max. Min. Max. 'ceo 20 30 â
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D 17275 n69s B13 transistors TQ-220AB 92CS- 2069IR3 0D1757S 3A750 92CH-32699

B0643

Abstract: d 17275 17273 ~ _ Darlington Power Transistore File N um ber 1241 BD643, BD645 , plifiers JEDEC TO-220AB Qc The RCA-BD643, BD645, BD647, and BD649 are m o n o lith ic s ilic o n , . M A X IM U M R A T IN G S , A b s o lu te -M a x im u m V a lu e s: BD643 BD645 60 60 > ; A 19 , _ B0643, BD645, BD647, BD649 E L E C T R IC A L C H A R A C T E R IS T IC S , A t C ase T e m p , .T LIMITS BD643 Min. - - Max. 0.5 0.2 2 BD645 Min. Max. 0.5 0.2 2 2 - - V I mA UNITS CUR RENT
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BD649C 3A75DA1 001727L

MAX2XX

Abstract: 2 sb 647 V \ \ MAGNA ESsS fpE gj If li lisi?:. BD645; 647 BD649; 651 SILICON DARLINGTON POWER , 3 V vCBO vCEO CM rtot Ti hFE hFE fhfe max. max. max. max. max. typ. > typ. BD645 647 649 , in mm 5,9 min i I 15,8 mcx »-0,6 â 2,4 BD645; 647 BD649; 651 CIRCUIT DIAGRAM r < R1 I , Limiting values in accordance with the Absolute Maximum System (IEC 134) bd645 647 649 651 , * Based on maximum averaae iunction temripraturp in lino w/ith mmm^n BD645; BD649; CHARACTERISTICS Tj =
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MAX2XX 2 sb 647 sb 649 a 7Z664 8D645

BD649

Abstract: BD647 File Number 1241 SbE ] > BD643, BD645, BD647, BD649 4302271 OOMObflZ £21 HARRIS SEMTCOND , o JEDEC TQ-220AB r t : 9 8 C S -3 9 9 6 9 Oc The BD643, BD645, BD647, and BD649 are , . BD643 45 45 BD645 60 60 « A 1? BD647 80 80 BD649 100 100 V V V A A A W W/°C ·c c , 0.5 -55 to 150 235 ·C 2-260 BD643, BD645, BD647, BD649 Unless Otherwise Specified , all types. 2-261 SbE ]> 4302271 0Q40bfl4 3T4 «HAS HARRIS SEMICOND SECTOR BD643, BD645, BD647
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BD64S 00m0 2069IR

BD 649

Abstract: 2SC 645 , BD645.BD647, BD649 104 IO3 10' t 10* mA 1812 0-01 435 ESC D â  fl23SbQS 00043^0 7 «SIEG 25C , perm, power dissipation versus temperature Plot =1 iTaui: Vce = parameter BD643, BD645, BD647, BD649 , °C BD643, BD645, BD647, BD649 10' 0 1 2 3V - BD 643 BD 645 -BD 647 BD 649 Collector-emitter saturation voltage Vce«. = ' Vài hr e = 250; T^ = 25 °C mA BD643, BD645, BD647, BD649 436 1813 D-02
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Q62702-D229 Q62702-D235 Q62702-D231 J50J1 BD 649 2SC 645 TOP-66 BD 104 NPN Q62901-B65 BD 649/BD 650 23SLQS 643/BD 645/BD 647/BD 649/BD

BO 649

Abstract: darlington bd 645 BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D â  7110fl2b 0042^ 741 «RHIN , ; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL n L. SbE D R1 711DÃ2b ODMSIS? bflâ MPHIN T , gain ratio of matched pairs at VqE = 3 V IC = 4A BD643/BD644 lc = 3A BD645/BD646 Diode forward , load; Iq = 4.5 A (see Fig. 3) 5bE T> 'CBO BD643; BD645; BD647; BD649; RD651_ 711002b , Material Copyrighted By Its Respective Manufacturer BD643; BD645; BD647; BD649; BD651 / \ PHILIPS
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Q62702-D376 BO 649 BD 104 b 647 c Q62702-D236 Q62702-D233 Q62702-D237 Q62702-D374 Q62901-B55

BD 649

Abstract: darlington bd 645 V \ \ MAGNA ESsS fpE gj If li lisi?:. BD645; 647 BD649; 651 SILICON DARLINGTON POWER , 3 V vCBO vCEO CM rtot Ti hFE hFE fhfe max. max. max. max. max. typ. > typ. BD645 647 649 , in mm 5,9 min i I 15,8 mcx »-0,6 â 2,4 BD645; 647 BD649; 651 CIRCUIT DIAGRAM r < R1 I , Limiting values in accordance with the Absolute Maximum System (IEC 134) bd645 647 649 651 , * Based on maximum averaae iunction temripraturp in lino w/ith mmm^n BD645; BD649; CHARACTERISTICS Tj =
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b 647 a c BD 650 BD NPN transistors B0649 BD 644 BD 647 653/1077A1
Showing first 20 results.