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BD377 Datasheet

Part Manufacturer Description PDF Type
BD377 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BD377 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
BD377 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BD377 N/A Semiconductor Master Cross Reference Guide Scan
BD377 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD377 N/A Shortform Transistor Datasheet Guide Scan
BD377 N/A Shortform Electronic Component Datasheets Scan
BD377 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD377 N/A Basic Transistor and Cross Reference Specification Scan
BD377 N/A Shortform Transistor PDF Datasheet Scan
BD377 N/A Shortform Transistor PDF Datasheet Scan
BD377 N/A Shortform Transistor PDF Datasheet Scan
BD377 N/A Cross Reference Datasheet Scan
BD377 N/A Transistor Replacements Scan
BD377 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD377 National Semiconductor PRO ELECTRON SERIES - JFET Scan
BD377 National Semiconductor Shortform National Semiconductor Datasheet Scan
BD377 SGS-Ates Misc. Data Book Scans 1975/76 Scan
BD377 SGS-Thomson SGS-Thomson Transistor Datasheets Scan
BD37710 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
Showing first 20 results.

BD377

Catalog Datasheet MFG & Type PDF Document Tags

BD377

Abstract: BD379 Symbol Rating Unit Collector Base Voltage BD375 VcbO 50 V BD377 75 V BD379 100 V Collector Emitter Voltage BD375 VcEO 45 V BD377 60 V BD379 80 V Emitter-Base Voltage Vebo 5 V Collector , Sustaining Voltage BD375 Vceo(sus) lc= 100mA, lB= 0 45 V BD377 60 V BD379 80 V Collector Base Voltage BD375 VcBO lc= 100nA, lE=0 50 V BD377 75 V BD379 100 V Collector Cutoff Current BD375 IcBO Vcb = 45V, Ie= 0 2 HA BD377 Vcb = 60V, lE=0 2 HA BD379 Vcb = 80V, lE=0 2 HA
-
OCR Scan
BD376 BD378 BD380 BD-375 transistor 377 BD375/377/379

bd379

Abstract: bd375 =25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO , °C 1. Emitter VCEO Collector-Emitter Voltage : BD375 : BD377 : BD379 Emitter-Base Voltage , otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379 Collector-Base Breakdown Voltage Collector Cut-off Current : BD375 : BD377 : BD379 : BD375 : BD377 : BD379 Test
Fairchild Semiconductor
Original

bd379

Abstract: BD37916STU products technical support my Fairchild company Product BD37710STU BD37716STU BD3776STU BD37725STU Product , =25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO , V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD375 : BD377 : BD379 Emitter-Base , =25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379 Collector-Base Breakdown Voltage Collector Cut-off Current : BD375 : BD377 : BD379 : BD375 : BD377
Fairchild Semiconductor
Original
BD37916STU BD37525STU BD377-10 BD3796STU BD37925STU BD37910STU

BD375

Abstract: transistor 377 Characteristic C ollecto r Base Voltage BD375 BD377 BD379 Symbol V cbo Rating 50 75 100 45 60 80 5 2 3 1 25 150 - 55 ^ 150 Unit V V V V V V V A A A W X °C C ollecto r E m itter Voltage BD375 : BD377 BD379 , Characteristic ` C ollector E m itter S ustaining Voltage: BD375 BD377 BD379 C o lle cto r Base Voltage BD375 BD377 BD379 C o lle cto r C uto ff Current BD375 BD377 BD379 E m itter C u to ff Current DC Current Gain
-
OCR Scan

bd379

Abstract: Characteristic C ollector Base Voltage Sym bol BD375 Rating Unit 50 V V cbO BD377 V , 2 A lc 3 A Ib BD375 1 A V cE O BD377 BD379 Em itter-Base Voltage , ax Unit V V lc = 100nA, lE= 0 V BD379 50 V 75 V cbO BD377 C ollector C utoff C urrent Typ 45 80 lc = 100mA, lB= 0 BD377 C ollector Base Voltage Min 60 V c e o (S U S ) V 100 BD375 V VCB = 45V, lE= 0 2 HA BD377 VCB = 60V, lE= 0
-
OCR Scan

BD379

Abstract: BD375 Parameter : BD375 : BD377 : BD379 Collector-Base Voltage Value 50 75 100 Units V V V 45 60 80 V V V V VCEO Collector-Emitter Voltage : BD375 : BD377 : BD379 VEBO , Voltage : BD375 : BD377 : BD379 Test Condition Min. IC = 100mA, IB = 0 45 60 80 V V V 50 75 100 V V V BVCBO Collector-Base Breakdown Voltage : BD375 : BD377 : BD379 IC = 100µA, IE = 0 ICBO Collector Cut-off Current : BD375 : BD377 : BD379 Typ
Fairchild Semiconductor
Original

transistor 377

Abstract: BD376 -55-150 Unit V : BD377 Collector Emitter Voltage : BD379 : BD375 : BD377 : V V V V V V A A A W , Sustaining Voltage BD375 BD377 BD379 Collector Base Voltage BD375 BD377 BD379 Collector Cutoff Current BD375 BD377 BD379 Emitter Cutoff Current * DC Current Gain * Collector Emitter Saturation Voltage * Base
-
OCR Scan
Abstract: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · C om plem ent to BD376, BD378 and BD380 respectively T O -126 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic C ollector Base Voltage BD375 BD377 BD379 C ollector Em itter Voltage BD375 BD377 , tic * C ollector Em itter Sustaining Voltage BD375 BD377 BD379 C ollector Base Voltage BD375 BD377 BD379 C ollector Cutoff C urrent BD375 BD377 BD379 Em itter C utoff Current * DC C urrent Gain * C -
OCR Scan

BD375

Abstract: BD376 BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications · Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC , and q Complement to BD375, BD377 and applications BD379 respectively New products Product selection , Memory space Optoelectronics Markets and q Complement to BD375, BD377 and applications BD379 respectively , to BD375, BD377 and applications BD379 respectively New products Product selection and parametric
Fairchild Semiconductor
Original
TO-126 fairchild BD38010STU

BD282

Abstract: BD285 Semiconductors Transistors - NPN/PNP Complementary NPN/PNP Complementary Transistors REFERENCE TABLE Code Max PX0T @ Tc=25'C Polarity (W) LVcf0 LVcbo Max lc (V) (V) (A) hF FE (A) Min Stock fT No. Outline Drawing No. BC440 BC460 BC441 BC461 BD281 BD282 BD283 BD284 BD285 BD286 BD375 BD376 BD377 B0378 BD379 BD380 BD433 B0434 BSS15 (2N5320) BSS17 (2N5322) BSS1S (2NS321) BSS18 (2NS323) NPN \ PNP / NPN PNP NPN \ PNP / NPN PNP NPN Ì PNP j NPN PNP NPN PNP NPN PNP NPN PNP
-
OCR Scan
B0283 BC461 2N5322 NPN TRANSISTORS LIST complementary npn-pnp npn pnp 40250 31634G 31635E 34326E

BD376

Abstract: BD380 BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 · Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 50 V : BD378 - 75 V : BD380 Collector Base Voltage Symbol - 100 V - 45 V - 60 V VCBO : BD376 Collector Emitter Voltage : BD376 VCEO : BD378 - 80 VEBO -5 V Collector Current (DC) IC -2 A Collector
Samsung Electronics
Original
BD-376

BD376

Abstract: BD377 BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â'¢ Complement to BD375, BD377 and BD379 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD376 VcBO - 50 V : BD378 - 75 V : BD380 - 100 V Collector Emitter Voltage : BD376 VcEO - 45 V : BD378 - 60 V : BD380 - 80 V Emitter Base Voltage Vebo - 5 V Collector Current (DC) lc - 2 A Collector Current (Pulse) lc - 3 A Base Current Ib - 1 A
-
OCR Scan
Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD375, BD377 and BD379 respectively TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic l : BD376 : BD378 : BD380 C ollecto r E m itter Voltage: BD376 : BD378 : BD380 E m itter Base Voltage C ollecto r Current (DC) C ollecto r Current (Pulse) Base Current C ollecto r D issipation (Tc = 25°C) J un ction Temperature Storage Temperature C ollector Base Voltage V GBC I [ I -5 0 -7 5 - 100 -
OCR Scan

BU4060

Abstract: BU409 BD376 50 45 2 25 40 0.15/2 1 1/100 BD377 BD378 75 60 2 25 40 0.15/2 1 1/100 wl BD379 BD380 100 80 2
-
OCR Scan
2N3716 2N3792 2N5873 2N5871 2N5874 2N5872 BU4060 BU409 2N5876 BD136 5S14D 33-O/
Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS · Complement to BD375, BD377 and BD379 respectively A B S O LU TE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD376 : BD378 : BD3B0 Collector Emitter Voltage . BD376 : BD378 : BD380 Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Tc=25'C) Junction Temperature Storage Temperature V ebo lc lc Ib Symbol VcBO Rating -5 0 -7 -
OCR Scan
100UA

KSC5036

Abstract: BD139 1 0.1 0.6 10 0.25 3 25 60 BD377 BD378 2 0.15 40 375 1 0.1 1.0 25 60 BD235 BD236 2 1 25 1
-
OCR Scan
KSC2682 KSA1142 KSC3502 KSC3503 KSA1381 KSA1406 KSC5036 BD139 KSC5034 KSE350 B0138 GG11S31

BD267

Abstract: 3/3 3/3 3/3 3/3 1/0.5 7M 7M 7M 7M 60 60 60 60 15 BD362 BD375 BD376 BD377
-
OCR Scan
BD267 BD262B BD263A BD263B BD266 T0126

BD380

Abstract: BD375 BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications · Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 Value - 50 - 75 - 100 Units V V V - 45 - 60 - 80 V V V V VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 VEBO
Fairchild Semiconductor
Original

kse350

Abstract: kse2 TRANSISTORS 2. POWER TRANSISTORS 2-1. General Purpose Transistors 2.1.1 TO-126 Type Transistors lc (A) 0.1 VcEO (V) 180 200 300 0.1 0.2 0.1 0.1 0.15 0.2 0.3 0.5 200 120 250 300 200 300 120 60 250 300 300 350 1.2 1.5 120 160 45 60 80 2 45 45 60 60 80 80 3 30 40 45 45 60 60 80 80 4 22 32 45 60 80 5 25 60 KSC3953 KSC2258 KSC2258A K SC5036 KSC2688 KSC5035 KSC5034 BD157 BD158 KSE340 BD159 KSC2690 KSC2690A BD135 BD137 BD139 BD375 BD233 BD377 BD235 BD379 BD237 KSD882 KSE180 KSD794 BD175 KSD794A KSE181
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OCR Scan
kse2 BD177 KSE182 BD179 BD435 BD437 BD439

bd139k

Abstract: ksd 180 TRANSISTORS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1 General Purpose Transistors 2.1.1 To-126 Type T ran sisto rs lc VcEO (V) 180 200 300 0.1 0.2 0.1 0.1 0.15 0.2 0.3 0.5 200 120 250 300 200 300 120 60 250 300 300 350 1.2 1.5 120 160 45 60 80 400 2 45 45 60 60 80 80 3 30 40 45 45 60 60 80 80 4 22 32 45 60 80 5 25 60 K SC 395 3 K SC 225 8 K SC 225 8A K SC 5036 K SC 2688 K SC 503 5 K SC 5034 BD157 BD158 K SE 3 4 0 BD159 K SC 269 0 K SC 2 6 9 0 A BD135 BD137 BD139 K SE 130 03 BD375 BD233 BD377 BD235
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OCR Scan
SE181 bd139k ksd 180 sc2682 se130 SB 772 SD882 BD441 SE200 BD234 BD238 BD176

BD376

Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD375, BD377 and BD379 respectively TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic l : BD376 : BD378 : BD380 C ollecto r E m itter Voltage: BD376 : BD378 : BD380 E m itter Base Voltage C ollecto r Current (DC) C ollecto r Current (Pulse) Base Current C ollecto r D issipation (Tc = 25°C) J un ction Temperature Storage Temperature C ollector Base Voltage V GBC I [ I -5 0 -7 5 - 100
-
OCR Scan

BUX 127

Abstract: bdw 51 52 BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications · Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 Value - 50 - 75 - 100 Units V V V - 45 - 60 - 80 V V V V VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 VEBO
-
OCR Scan
BDX71 3055H BUX 127 bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C BD244B BD434 BD440 BD681 BD682 BD712
Showing first 20 results.