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TPS3847108DBVT Texas Instruments 380-nA Voltage Monitor for 12-V rails 5-SOT-23 -40 to 105 visit Texas Instruments
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BD376/378/380

Catalog Datasheet MFG & Type PDF Document Tags

BD380

Abstract: BD375 BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications · Complement to , 2000 BD376/378/380 Typical Characteristics 100 -500 VCE(sat)(mV), SATURATION VOLTAGE , ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD376/378/380 Package , Collector-Base Voltage Parameter : BD376 : BD378 : BD380 Value - 50 - 75 - 100 Units V V V - 45 - 60 - 80 V V V V VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380 VEBO
Fairchild Semiconductor
Original
BD375 BD377 BD379 BD376/378/380

bd379

Abstract: BD376 BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications · Complement to , , February 2000 BD376/378/380 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. B, February 2000 BD376/378/380 Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 , =25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO , V V V A A A W °C °C 1. Emitter VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380
Fairchild Semiconductor
Original

BD375

Abstract: BD376 BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications · Complement to , , February 2000 BD376/378/380 Typical Characteristics 100 -500 80 VCE(sat)(mV), SATURATION , , February 2000 BD376/378/380 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 , =25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD376 : BD378 : BD380 1 TO , ~ 150 Units V V V V V V V A A A W °C °C VCEO Collector-Emitter Voltage : BD376 : BD378 : BD380
Fairchild Semiconductor
Original
TO-126 fairchild BD38010STU

BD380

Abstract: BD376 INCHANGE Semiconductor isc Silicon PNP Power Transistors BD376/378/380 ELECTRICAL CHARACTERISTICS , isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 , =25) SYMBOL PARAMETER VALUE BD376 VEBO Collector-Emitter Voltage -75 -100 -45 BD378 -60 BD380 VCEO BD378 BD376 Collector-Base Voltage -50 BD380 VCBO UNIT
INCHANGE Semiconductor
Original
380 transistor

BD376

Abstract: BD380 BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING , Classification 6 10 16 25 hFE 1 40 - 100 63 - 160 100 - 250 150 - 375 BD376/378 , Symbol - 100 V - 45 V - 60 V VCBO : BD376 Collector Emitter Voltage : BD376 , Condition VCEO(sus) : BD378 *Collector Emitter Sustaining Voltage - 100 : BD376 : BD376 , uA - 100 uA : BD376 Emitter Cutoff Current ICBO IEBO hFE1 *DC Current Gain
Samsung Electronics
Original
BD-376

BD376

Abstract: BD377 BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS , Copyrighted By Its Respective Manufacturer BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN , Symbol Rating Unit Collector Base Voltage : BD376 VcBO - 50 V : BD378 - 75 V : BD380 - 100 V Collector Emitter Voltage : BD376 VcEO - 45 V : BD378 - 60 V : BD380 - 80 V Emitter Base Voltage Vebo - , 'Collector Emitter Sustaining Voltage : BD376 Vceo(sus) lc=- 100mA, lB= 0 - 45 V : BD378 - 60 V
-
OCR Scan

BD376

Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING , r C orporation tm BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN , : BD378 - 60 V : BD380 - 80 V C ollector Base Voltage Sym bol : BD376 V cbO C ollector Em itter V oltage : BD376 V cE O Em itter Base Voltage V ebo -5 V C , =25°C) Characteristic Sym bol â'™ C ollector E m itter Sustaining V oltage : BD376 Test C ondition Min
-
OCR Scan
Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS , 40-100 447 ELECTRONICS BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR EMITTER , Characteristic l : BD376 : BD378 : BD380 C ollecto r E m itter Voltage: BD376 : BD378 : BD380 E m itter Base , 3 ELECTRICAL CHARACTERISTICS Characteristic 'C o lle c to r E m itter Sustaining Voltage BD376 BD378 BD380 C o lle cto r Base Voltage BD376 BD378 BD380 C ollecto r C uto ff Current BD376 BD378 BD380 -
OCR Scan
Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS · Complement to BD375, BD377 and BD379 respectively A B S O LU TE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD376 : BD378 : BD3B0 Collector Emitter Voltage . BD376 : BD378 : BD380 , 449 ELECTRONICS BD376/378/380 DC CURRENT GAIN PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR , Sustaining Voltage BD376 BD378 BD380 Collector Base Voltage BD376 BD378 BD380 Collector Cutoff Current BD376 -
OCR Scan
100UA
Abstract: BD376/378/380 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS , ^ 1 9 9 9 F airchild S e m iconductor Corporation BD376/378/380 PNP EPITAXIAL SILICON , Collector Base Voltage : BD378 : BD380 Collector Emitter Voltage : BD376 : BD378 : BD380 Emitter Base , 5 -6 0 -8 0 -5 -2 -3 -1 25 150 -55 ~ 150 Unit V V V V V V V A A A W °C °C : BD376 Pc T j T , : BD376 : BD378 : BD380 Collector Base Voltage : BD378 : BD380 Collector Cutoff Current : BD378 : BD380 -
OCR Scan

bd379

Abstract: BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â'¢ C om plem ent to BD376, BD 378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BD375 Rating Unit 50 V V cbO BD377 V BD379 C ollecto r E m itter Voltage 75 100 V 45 V 60 V 80 V 5 V lc 2 A lc 3 A Ib BD375 1 A V cE O BD377 BD379 Em itter-Base Voltage
-
OCR Scan

bd379

Abstract: BD37916STU BD375/377/379 BD375/377/379 Medium Power Linear and Switching Applications · Complement to BD376, BD378 and BD380 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC , Markets and q Complement to BD376, BD378 and applications BD380 respectively New products Product , Complement to BD376, BD378 and applications BD380 respectively New products Product selection and parametric , to BD376, BD378 and applications BD380 respectively New products Product selection and parametric
Fairchild Semiconductor
Original
BD37916STU BD37525STU BD377-10 BD3796STU BD37925STU BD37910STU

ksd 168

Abstract: KSA 1102 KSR2102 Page 343 345 347 349 351 352 353 354 355 357 359 361 363 365 367 369 371 373 375 376 377 378 , BD241 BD242 BD243 BD244 BD375 BD377 BD379 BD376 BD378 BD380 BD433 BD435 BD437 BD434 B0436 BD438 BD439
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OCR Scan
ksd 168 KSA 1102 ksd 301 ksp13 601 BD442 13003 sd KSA473 KSA539 KSA542 KSA614 KSA642 KSA643

KSD 303

Abstract: ksd 180 346 348 350 352 Vol.1 Vol.1 354 357 359 361 363 365 367 Vol.1 369 372 375 378 381 384 387 390 393 396 , BD239 BD240 BD241 BD242 BD243 BD244 BD375 BD377 BD379 BD376 BD378 BD380 BD433 BD435 BD437 BD434 BD436
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OCR Scan
KSP20 SS80S0 KSD 303 ksd 180 bd681 9 435 tip bc548 BC548 ksd 201 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916

BD377

Abstract: BD379 BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â'¢ Complement to BD376, BD378 and BD380 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD375 VcbO 50 V BD377 75 V BD379 100 V Collector Emitter Voltage BD375 VcEO 45 V BD377 60 V BD379 80 V Emitter-Base Voltage Vebo 5 V Collector Current (DC) lc 2 A * Collector Current (Pulse) lc 3 A Base Current Ib 1 A Collector Dissipation (Tc
-
OCR Scan
BD-375 transistor 377

BD282

Abstract: BD285 Semiconductors Transistors - NPN/PNP Complementary NPN/PNP Complementary Transistors REFERENCE TABLE Code Max PX0T @ Tc=25'C Polarity (W) LVcf0 LVcbo Max lc (V) (V) (A) hF FE (A) Min Stock fT No. Outline Drawing No. BC440 BC460 BC441 BC461 BD281 BD282 BD283 BD284 BD285 BD286 BD375 BD376 BD377 B0378 BD379 BD380 BD433 B0434 BSS15 (2N5320) BSS17 (2N5322) BSS1S (2NS321) BSS18 (2NS323) NPN \ PNP / NPN PNP NPN \ PNP / NPN PNP NPN Ì PNP j NPN PNP NPN PNP NPN PNP NPN PNP
-
OCR Scan
B0283 BC461 2N5322 NPN TRANSISTORS LIST complementary npn-pnp npn pnp 40250 31634G 31635E 34326E

BU4060

Abstract: BU409 BD376 50 45 2 25 40 0.15/2 1 1/100 BD377 BD378 75 60 2 25 40 0.15/2 1 1/100 wl BD379 BD380 100 80 2
-
OCR Scan
2N3716 2N3792 2N5873 2N5871 2N5874 2N5872 BU4060 BU409 2N5876 BD136 5S14D 33-O/

BD375

Abstract: transistor 377 BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BD376, BD378 and BD380 respectively TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r Base Voltage BD375 BD377 BD379 Symbol V cbo Rating 50 75 100 45 60 80 5 2 3 1 25 150 - 55 ^ 150 Unit V V V V V V V A A A W X °C C ollecto r E m itter Voltage BD375 : BD377 BD379 E m itter Base Voltage C o lle cto r Current (DC) C o lle cto r C urrent (Pulse) Base Current C o
-
OCR Scan

transistor 377

Abstract: BD376 BD375/377/379 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS · Complement to BD376, BD378 and BD380 respectively A B S O LU T E MAXIMUM RATINGS Characteristic Collector Base Voltage : Symbol BD375 V ceo Rating 50 75 100 45 60 80 5 2 3 1 25 150 -55-150 Unit V : BD377 Collector Emitter Voltage : BD379 : BD375 : BD377 : V V V V V V A A A W t t V ceo BD379 V ebo lc lc Ib Emitter-Base Voltage Collector Current (DC) * Collector
-
OCR Scan

bd379

Abstract: bd375 BD375/377/379 BD375/377/379 Medium Power Linear and Switching Applications · Complement to BD376, BD378 and BD380 respectively NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO-126 2.Collector Value 50 75 100 45 60 80 5 2 3 1 25 150 - 55 ~ 150 3.Base Units V V V V V V V A A A W °C °C 1. Emitter VCEO Collector-Emitter Voltage : BD375 : BD377 : BD379 Emitter-Base Voltage
Fairchild Semiconductor
Original
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