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BD246 Datasheet

Part Manufacturer Description PDF Type
BD246 Bourns PNP SILICON POWER TRANSISTORS Original
BD246 Power Innovations PNP SILICON POWER TRANSISTOR Original
BD246 N/A Shortform Transistor PDF Datasheet Scan
BD246 N/A Shortform Transistor PDF Datasheet Scan
BD246 N/A Transistor Replacements Scan
BD246 N/A Cross Reference Datasheet Scan
BD246 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BD246 N/A Semiconductor Master Cross Reference Guide Scan
BD246 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BD246 N/A Shortform Transistor Datasheet Guide Scan
BD246 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BD246 Texas Instruments The Power Semiconductor Data Book 1974 Scan
BD246 Texas Instruments Discrete Devices 1978 Scan
BD246 Texas Instruments Supply Division Product Catalogue 1978/79 Scan
BD246 Transys Electronics BJT, PNP, Power Transistor, IC 10A Scan
BD246 Transys Electronics PNP SILICON POWER TRANSISTORS Scan
BD246A Bourns PNP SILICON POWER TRANSISTORS Original
BD246A Power Innovations PNP SILICON POWER TRANSISTOR Original
BD246A N/A Shortform Transistor PDF Datasheet Scan
BD246A N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

BD246

Catalog Datasheet MFG & Type PDF Document Tags

transistor BD245

Abstract: BD246 TRANSYS ELECTRONICS LIMITED BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS â , Collector-emitter voltage (RBE = 100 Q) BD246 BD246A BD246B BD246C vcer -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD246 BD246A BD246B BD246C vceo -45 -60 -80 -100 V Emitter-base voltage vebo -5 V , . BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , COLLECTOR CURRENT tcs634ac -1-0 . - Collector Current - A Figure 3. BD246, BD246A, BD246B, BD246C PNP
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BD245 transistor BD245 b0246

BD246

Abstract: BD245 BD246A BD246B BD246C BD246 BD246A BD246B BD246C Emitter-Base Voltage IC Value IC ICM , VCE = -70 V , VBE = 0 BD246A VCE = -90 V , VBE = 0 BD246B VCE = -115 V , VBE = 0 ICES BD246 BD246C BD246 BD246A BD246B BD246C VCE = -30 V , IB = 0 ICEO Collector Cut-off , Base-Emitter Voltage(*) VE B = -5 V , IC = 0 IC = -30 mA, IB = 0 BD246 BD246A BD246B BD246C VCE = , BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors
Comset Semiconductors
Original
BD246 EQUIVALENT

B0246

Abstract: BD2468 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 19&7. Power Innovations , BD246C BD246 BD246A BD246B BD246C V CEO V ALUE -55 -70 Collector-emitter voltage (R8E = 100 Í2 , include testing ot all parameters. INNOVATIONS » 2-39 BD246, BD246A, BD246B, BD246C PNP SILICON , = VCc * v" -5 V -4 V -4 V -4 V -0.3 A -2.5 A -4 V -4 V r =0 BD246A BD2468 BD246C BD246 BD246A , . BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS JUN E 1973 - REVISED M ARCH 1997 TYPICAL
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B0-246 B0246B

BD246

Abstract: BD246C ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE BD246 VCEO Collector-emitter voltage BD246A -70 BD246B -90 -115 BD246 Collector-base voltage -55 BD246C VCBO -45 BD246A BD246B Open base BD246C VEBO UNIT Emitter-base voltage -60 -80 V V -100 , BD246B -80 BD246C -100 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB , SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors
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BD246/A/B/C BD245/A/B/C BD246/246A BD246B/246C

BD246c

Abstract: BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , BD246C BD246 BD246A BD246B V CEO BD246C VEBO IC IB ICM Ptot Ptot Tj ½LIC2 Tstg TL PRODUCT , . BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , -1.6 -3 V V IB = 0 BD246A BD246B BD246C BD246 BD246A BD246B BD246C BD246/246A BD246B/246C MIN -45 -60 , . BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC
Bourns
Original
TCS634AB TCS634AC SAS634AC TIS633AA

BD246

Abstract: transistor BD245 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD246, BD246A, BD246B, BD246C , notice. BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS , change without notice. 3 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS MAXIMUM , Operation -10 -1·0 -0·1 BD246 BD246A BD246B BD246C -0·01 -1·0 -10 -100 -1000
Bourns
Original

BD246C

Abstract: BD246 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD246, BD246A, BD246B, BD246C , notice. BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS , change without notice. 3 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS MAXIMUM , Operation -10 -1·0 -0·1 BD246 BD246A BD246B BD246C -0·01 -1·0 -10 -100 -1000
Bourns
Original
transistor bd246a

BD245

Abstract: transistor BD245 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , transistor parameters. PRODUCT 2 INFORMATION BD246, BD246A, BD246B, BD246C PNP SILICON POWER , -1·0 -0·1 BD246 BD246A BD246B BD246C -0·01 -1·0 -10 -100 -1000 VCE - , mounting tab. PRODUCT MDXXAW INFORMATION 5 BD246, BD246A, BD246B, BD246C PNP SILICON POWER
Power Innovations
Original

BD246C

Abstract: transistor BD245 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , BD246B BD246C BD246 V Collector-em itter voltage (lc = -30 mA) BD246A BD246B BD246C V CEO , not necessarily include testing of all parameters. BD246, BD246A, BD246B, BD246C PNP SILICON POWER , BD246A BD246B BD246C V o o o o V BE = 0 V BE = 0 V BE = 0 V BE = 0 lB = 0 lB = 0 II _o BD246 , parameters. PRODUCT I N F O R M A T I O N 2 BD246, BD246A, BD246B, BD246C PNP SILICON POWER
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bd246c

Abstract: bd246 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD246 Collector-emitter voltage (RBE = 100 ) BD246A BD246B BD246C BD246 Collector-emitter , without notice. BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 -1 -4 -1.6 -3 V V IB = 0 BD246A BD246B BD246C BD246 BD246A , SEPTEMBER 2002 Specifications are subject to change without notice. BD246, BD246A, BD246B, BD246C PNP
Bourns
Original
TCS634AG

BD250

Abstract: bd249 (Ta= ) SYMBOL PARAMETER CONDITIONS BD246 VCBO Collector-base voltage BD246A BD246B VALUE -55 Collector emitter -70 -90 BD246C Collector-emitter voltage -45 BD246A BD246B Open base BD246C VEBO V -115 BD246 VCEO UNIT Emitter-base voltage -60
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BD250 BD250A BD250B BD250C bd249 BD249 EQUIVALENT BD250/A/B/C BD249/A/B/C

tip 420 transistor

Abstract: BD246 TEXAS INSTRUMENTS BD246, BD246A, BD246B, BD246C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , : Supplementary data may be published at a later date. 2-52 Texas Instruments BD246, BD246A, BD246B, BD246C electrical characteristics at 25 °C case temperature PARAMETER TEST CONDITIONS BD246 B024GA BD246B BD246C , -% \ r " V 2-52 Texas Instruments BD246, BD246A, BD246B, BD246C vCER = »(Rbe); 'C -30mA "be hFE = , (unless otherwise noted) BD246 BD246A BD246B Collector-Emitter Voltage (Rbe = 10012).-55 V -70
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tip 420 transistor BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 transistor BD 246 tip npn BD245A-C 40PEP 80PEP

BC125

Abstract: BD250 (Ta=) SYMBOL PARAMETER CONDITIONS VALUE TOR UC BD246 VCBO -55 BD246A Collector-base voltage OND IC Collector emitter BD246B SEM GE BD246C VCEO VEBO HAN C IN Collector-emitter voltage UNIT BD246 BD246A -70 V -90 -115 -45 -60 Open base V BD246B -80 BD246C -100 Emitter-base voltage Open
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BC125 BD250/250A BD250B/250C

BD245C

Abstract: bd245 SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD245 VCBO Collector-base voltage BD245A
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BD245B BD245C BD245/245A BD245B/245C

transistor BD245

Abstract: BD245C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BD245 VEBO Collector-Emitter Voltage
INCHANGE Semiconductor
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BD245 transistor NPN Transistor 10A 70V NPN Transistor VCEO 80V 100V BD245/A BD245B/C
Abstract: BD245B BD245C BD246 BD246A NPN NPN NPN PNP PNP SOT 9 3 SOT 93 SOT93 SOT 9 3 SOT 9 3 , /1 4/1 80 80 80 80 80 BD246B BD246C BD249 BD249A BD249B PNP PNP NPN NPN NPN -
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BD234 BD235 BD236 BD237 BD238 T0126

R3381

Abstract: R3498 Sold BD245 BD245A BD245A-S BD245B BD245B-S BD245C BD245C-S BD245-S BD246 BD246A BD246A-S BD246B BD246B-S BD246C BD246C-S BD246-S BD249 BD249A BD249A-S BD249B BD249B-S BD249C
Bourns
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MP150SG BD250C-S BD251 BDW85 BDW85-S R3381 R3498 a101 transistor R3381-S buv49 BLBF40 MG15G-1040R MG15F-1040R E34947 BD249C-S

BD245C

Abstract: bd245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997. Power Innovations Limited. UK JUNE 1973 - REVISED MARCH 1997 · · · · · Designed for Complementary Use with the BD246 Series 80 W at 25'C Case Temperature B C SOT-93 PACKAGE (TOP VIEW) 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available E C Pin 2 is in electrical contact with the m ounting base. c Ç absolute maximum ratings at 25°C case temperature (unless
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b0245c 8D245 B0245C

transistor BD245

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/ global/pdfs/TSP1203_SOT93_POM.pdf. SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with
Bourns
Original
TCS633AG TCS633AB TCS633AC SAS633AC

r3381

Abstract: R3498 BD245-S BD246 BD246A BD246A-S BD246B BD246B-S BD246C BD246C-S BD246-S BD249 BD249A BD249A-S
Bourns
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BU466 TIC253D-S TIC263D-S TIC263M MP150s tipl763 buv48s TRANSISTOR 612 BD249-S BD250A-S BD250B-S BD250-S BD251-S BD745B

BD NPN transistors

Abstract: BD 139 140 BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD246 Collector-emitter voltage (RBE = 100 ) BD246A BD246B VCER BD246B -70 V -90 -115 BD246 , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN BD246 V (BR)CEO
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BD NPN transistors BD 139 140 BD139 BD139-6 BD - 100 V BD244

TIP 48 transistor

Abstract: TIP 32 transistor BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD246 Collector-emitter voltage (RBE = 100 ) BD246A BD246B BD246C BD246 Collector-emitter , without notice. BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD246 V(BR , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 -1 -4 -1.6 -3 V V IB = 0 BD246A BD246B BD246C BD246 BD246A
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BD242 BD242A BD242B BD242C TIP 48 transistor TIP 32 transistor transistor TIP 32 BD241A-C
Showing first 20 results.