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Part : BD246CS Supplier : Bourns Manufacturer : ComSIT Stock : 14,960 Best Price : - Price Each : -
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BD246/246A

Catalog Datasheet MFG & Type PDF Document Tags

BD246

Abstract: BD246C =-4V -3.0 V ICEO Collector cut-off current -0.7 mA -1 mA BD246/246A VCE=-30V; IB , SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors , ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE BD246 VCEO Collector-emitter voltage BD246A -70 BD246B -90 -115 BD246 Collector-base voltage -55 BD246C VCBO -45 , SavantIC Semiconductor Product Specification BD246/A/B/C Silicon PNP Power Transistors
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bd245 BD246/A/B/C BD245/A/B/C BD246/246A BD246B/246C

B0246

Abstract: BD2468 BD246B BD246C BD246/246A BD246B/246C -45 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 40 20 4 -1 -4 , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 19&7. Power Innovations , maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYM BO L BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C V CEO V ALUE -55 -70 Collector-emitter voltage (R8E = 100 Í2 , include testing ot all parameters. INNOVATIONS » 2-39 BD246, BD246A, BD246B, BD246C PNP SILICON
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B0246 BD2468 B0-246 B0246B

BD246

Abstract: transistor BD245 current vCE = vCE = -30 V -60 V lB = 0 lB = 0 BD246/246A BD246B/246C -0.7 -0.7 mA 'ebo Emitter cut-off , TRANSYS ELECTRONICS LIMITED BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS â , Collector-emitter voltage (RBE = 100 Q) BD246 BD246A BD246B BD246C vcer -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD246 BD246A BD246B BD246C vceo -45 -60 -80 -100 V Emitter-base voltage vebo -5 V , . BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case
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transistor BD245

BD246c

Abstract: -1.6 -3 V V IB = 0 BD246A BD246B BD246C BD246 BD246A BD246B BD246C BD246/246A BD246B/246C MIN -45 -60 , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , °C case temperature (unless otherwise noted) RATING BD246 Collector-emitter voltage (RBE = 100 ) BD246A , BD246C BD246 BD246A BD246B V CEO BD246C VEBO IC IB ICM Ptot Ptot Tj ½LIC2 Tstg TL PRODUCT , . BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case
Bourns
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TCS634AB TCS634AC SAS634AC TIS633AA

BD246

Abstract: transistor BD245 -30 V IB = 0 BD246/246A -0.7 current VCE = -60 V IB = 0 BD246B/246C -0.7 , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , 0, RS = 0.1 , VCC = -20 V. NOITAMROFNI NOTES: 1. 2. 3. 4. V -90 BD246 Collector-emitter voltage (IC = -30 mA) UNIT -55 BD246 BD246A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD246, BD246A, BD246B, BD246C
Bourns
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bd246c

Abstract: bd246 BD246B BD246C BD246/246A BD246B/246C MIN -45 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD246 Collector-emitter voltage (RBE = 100 ) BD246A BD246B BD246C BD246 Collector-emitter , without notice. BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD246 V(BR
Bourns
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TCS634AG

BD246C

Abstract: BD246 -30 V IB = 0 BD246/246A -0.7 current VCE = -60 V IB = 0 BD246B/246C -0.7 , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , 0, RS = 0.1 , VCC = -20 V. NOITAMROFNI NOTES: 1. 2. 3. 4. V -90 BD246 Collector-emitter voltage (IC = -30 mA) UNIT -55 BD246 BD246A VALUE TCUDORP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD246, BD246A, BD246B, BD246C
Bourns
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transistor bd246a

BD245

Abstract: transistor BD245 BD246C -0.4 Collector cut-off VCE = -30 V IB = 0 BD246/246A -0.7 current V CE = , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD246 Collector-emitter voltage (RBE = 100 ) BD246A BD246B VCER BD246B -70 V -90 -115 BD246 , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997
Power Innovations
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BD246C

Abstract: transistor BD245 LU > -30 V -60 V > up BD246/246A BD246B/246C mA o o 40 (see Notes 5 and 6) 20 4 (see , BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , ounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD246 , BD246B BD246C BD246 V Collector-em itter voltage (lc = -30 mA) BD246A BD246B BD246C V CEO , not necessarily include testing of all parameters. BD246, BD246A, BD246B, BD246C PNP SILICON POWER
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BD246

Abstract: BD245 BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors , Base Current Power Dissipation @ Tmb = 25° C Junction Temperature Storage Temperature BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C Emitter-Base Voltage IC Value IC ICM , COMSET SEMICONDUCTORS Value Unit 1.56 42 °C / W °C / W 1/3 BD246, A, B, C , BD246 BD246C BD246 BD246A BD246B BD246C VCE = -30 V , IB = 0 ICEO Collector Cut-off
Comset Semiconductors
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BD246 EQUIVALENT

BD250

Abstract: bd249 (Ta= ) SYMBOL PARAMETER CONDITIONS BD246 VCBO Collector-base voltage BD246A BD246B , BD246B Open base BD246C VEBO V -115 BD246 VCEO UNIT Emitter-base voltage -60
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BD250 BD250A BD250B BD250C bd249 BD249 EQUIVALENT BD250/A/B/C BD249/A/B/C

tip 420 transistor

Abstract: BD246 TEXAS INSTRUMENTS BD246, BD246A, BD246B, BD246C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD246 BD246A BD246B Collector-Emitter Voltage (Rbe = 10012).-55 V -70 , : Supplementary data may be published at a later date. 2-52 Texas Instruments BD246, BD246A, BD246B, BD246C electrical characteristics at 25 °C case temperature PARAMETER TEST CONDITIONS BD246 B024GA BD246B BD246C , are nominal; exact values vary slightly with transistor parameters. 2-52 Texas Instruments BD246
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tip 420 transistor BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 transistor BD 246 tip npn BD245A-C 40PEP 80PEP

BC125

Abstract: BD250 (Ta=) SYMBOL PARAMETER CONDITIONS VALUE TOR UC BD246 VCBO -55 , VEBO HAN C IN Collector-emitter voltage UNIT BD246 BD246A -70 V -90 -115
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BC125 BD250/250A BD250B/250C

BD245C

Abstract: bd245 SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD245 VCBO Collector-base voltage BD245A
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BD245B BD245C BD245/245A BD245B/245C

transistor BD245

Abstract: BD245C isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BD245 VEBO Collector-Emitter Voltage
INCHANGE Semiconductor
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BD245 transistor NPN Transistor 10A 70V NPN Transistor VCEO 80V 100V BD245/A BD245B/C
Abstract: BD245B BD245C BD246 BD246A NPN NPN NPN PNP PNP SOT 9 3 SOT 93 SOT93 SOT 9 3 SOT 9 3 -
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BD234 BD235 BD236 BD237 BD238 T0126

R3381

Abstract: R3498 Sold BD245 BD245A BD245A-S BD245B BD245B-S BD245C BD245C-S BD245-S BD246 BD246A BD246A-S
Bourns
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MP150SG BD250C-S BD251 BDW85 BDW85-S R3381 R3498 a101 transistor R3381-S buv49 BLBF40 MG15G-1040R MG15F-1040R E34947 BD246B-S

BD245C

Abstract: bd245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997. Power Innovations Limited. UK JUNE 1973 - REVISED MARCH 1997 · · · · · Designed for Complementary Use with the BD246 Series 80 W at 25'C Case Temperature B C SOT-93 PACKAGE (TOP VIEW) 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available E C Pin 2 is in electrical contact with the m ounting base. c Ç absolute maximum ratings at 25°C case temperature (unless
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b0245c 8D245 B0245C

transistor BD245

Abstract: BD245 BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/ global/pdfs/TSP1203_SOT93_POM.pdf. SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with
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TCS633AG TCS633AB TCS633AC SAS633AC

r3381

Abstract: R3498 BD245-S BD246 BD246A BD246A-S BD246B BD246B-S BD246C BD246C-S BD246-S BD249 BD249A BD249A-S
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BU466 TIC253D-S TIC263D-S TIC263M MP150s tipl763 buv48s TRANSISTOR 612 BD249B BD249B-S BD249C BD249C-S BD249-S BD250A-S

transistor BD 246

Abstract: TIP 32 transistor BD246C -0.4 Collector cut-off VCE = -30 V IB = 0 BD246/246A -0.7 current V CE =
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BD240 BD240A BD240B BD240C TIP 32 transistor transistor TIP 32 TIP 29 transistor TIP 31 Transistor bd 244 BD239A-C
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