500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
BD244B ON Semiconductor 6.0 A, 80 V PNP Bipolar Power Transistor, 1200-BLKBG visit Digikey

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BD244BG Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3577 Price Each : $0.4116
Part : BD244BTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2229 Price Each : €0.4429
Part : BD244BTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2069 Price Each : $0.2189
Part : BD244BTU Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.3002 Price Each : $0.3455
Part : BD244B Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 6,715 Best Price : $0.25 Price Each : $0.25
Part : BD244B Supplier : Harris Semiconductor Manufacturer : Rochester Electronics Stock : 271 Best Price : $1.05 Price Each : $1.05
Part : BD244BG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 7,956 Best Price : $0.60 Price Each : $0.60
Part : BD244BTU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 150 Best Price : $0.51 Price Each : $0.51
Part : BD244BTU Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 1,100 Best Price : - Price Each : -
Part : BD244BG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 850 Best Price : $0.8182 Price Each : $0.8182
Part : BD244BG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 41 Best Price : $0.8182 Price Each : $0.8182
Part : BD244BG Supplier : ON SEMICONDUCTOR Manufacturer : New Advantage Stock : 1,100 Best Price : $0.4765 Price Each : $0.5062
Part : BD244BTU Supplier : Fairchild Semiconductor Manufacturer : New Advantage Stock : 900 Best Price : $0.2706 Price Each : $0.2875
Shipping cost not included. Currency conversions are estimated. 

BD244B Datasheet

Part Manufacturer Description PDF Type
BD244B Bourns PNP SILICON POWER TRANSISTORS Original
BD244B Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original
BD244B Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BD244B Motorola Complementary Silicon Plastic Power Transistors Original
BD244B On Semiconductor Complementary Silicon Plastic Power Transistors Original
BD244B Philips Semiconductors Silicon Epitaxial Base Power Transistors Original
BD244B Power Innovations PNP SILICON POWER TRANSISTORS Original
BD244B STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original
BD244B USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. Original
BD244B Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS Scan
BD244B Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan
BD244B Continental Device India Semiconductor Device Data Book 1996 Scan
BD244B Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BD244B Ferranti Semiconductors Quick Reference Guide 1985 Scan
BD244B Ferranti Semiconductors Power Transistors 1977 Scan
BD244B General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. Scan
BD244B Mospec POWER TRANSISTORS(6A,65W) Scan
BD244B Mospec Complementary Silicon Plastic Power Transistor Scan
BD244B Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD244B Motorola European Master Selection Guide 1986 Scan
Showing first 20 results.

BD244B

Catalog Datasheet MFG & Type PDF Document Tags

bd244

Abstract: TRANSISTOR BD244 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , "¦) BD244A BD244B VALUE -55 VCER -70 -115 BD244 -45 BD244A BD244B V CEO BD244C , without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0
-
Original
TRANSISTOR BD244 BD243 TCS634AF SAS634AD TIS633AB

BD243B

Abstract: bd244c ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package , BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices , ) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 , Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc
ON Semiconductor
Original
1N5825 MSD6100 BD243B/D

BD243

Abstract: BD244 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (RBE = 100 ) BD244A BD244B VCER BD244B -70 V -90 -115 BD244 , BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , V CE = -70 V V BE = 0 BD244A -0.4 cut-off current V CE = -90 V V BE = 0 BD244B
Power Innovations
Original

bd243c

Abstract: Transistor bd243c Collector Emitter Sustaining Voltage - V cE O (sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - , AB Package BD243B BD243C* BD244B BD244C* ` Motorola Preferred Device NPN PNP · · MAXIMUM , perating and Storage Junction Temperature Range Symbol VCEO VCB Veb BD243B BD244B 80 80 5.0 , , Inc. 1995 ftf) M O T O R O L A BD243B BD243C BD244B BD244C ELECTRICAL CHARACTERISTICS (T q = 2 , m A d c , I b = 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C, BD244B, BD244C Ic e s BD243B
-
OCR Scan
Transistor bd243c
Abstract: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD244A BD244 BD244B BD244C BD244B , change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , = 1 kHz f = 1 MHz 20 3 30 15 -1.5 -2 V V IB = 0 BD244A BD244B BD244C BD244 BD244A BD244B BD244C BD244/244A BD244B/244C MIN -45 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP MAX UNIT Bourns
Original
TCS634AH TCS634AE

BD244

Abstract: b0244c BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS â'¢ Designed for Complementary Use , 100 Q) BD244 BD244A BD244B BD244C VCER -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD244 BD244A BD244B BD244C VCEO -45 -60 -80 -100 V Emitter-base voltage VEBO -5 V Continuous , LIMITED BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical characteristics at 25 , Collector-emitter breakdown voltage lc = -30 mA (see Note 5) lB = 0 BD244A BD244B BD244C -60 -80 -100 V VCE
-
OCR Scan
b0244c B0244A T0220

bd244

Abstract: BD243 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO , subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0
Bourns
Original

BD244C

Abstract: BD244 Rating Unit Collector-Emitter Voltage : BD244 Vobo - 45 V BD244A - 60 V BD244B - 80 V BD244C - 100 V Collector Emitter Voltage : BD244 Vceo - 45 V BD244A - 60 V BD244B - 80 V BD244C - , Emitter Sustaining Voltage : BD244 Vceo(sus) lc=- 30mA, lb= 0 - 45 V BD244A - 60 V BD244B - , mA : BD244B/244C Vce= - 60V, lb=0 - 0.7 mA Collector Cutoff Current : BD244 Ices Vce = - 45V, Vbe = 0 - 0.4 mA BD244A Vce = - 60V, Vbe = 0 - 0.4 mA BD244B Vce =-80V, Vbe =0 - 0.4 mA
-
OCR Scan
BD243A BD243 transistor transistor bd244c BD244/A/B/C BD244B/244C

BD243CG

Abstract: WT1D BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package TO-220 TO-220 (Pb-Free) TO-220 TO , BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , (sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - , RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Symbol VCEO Value 80 100 80 100 5.0 6 10 2.0 65 0.52 -65 to +150 Unit Vdc 1 Vdc 2 3
ON Semiconductor
Original
WT1D
Abstract: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -115 -45 -60 UNIT BD244B BD244C BD244 V Collector-em itter voltage (lc = -30 mA) BD244A BD244B BD244C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Note 5) v ' V CE= -55 V -70 V -90 V lo = B 0 BD244A BD244B BD244C V o o o o V BE = -
OCR Scan
T0-220

BD244B

Abstract: r z 7 S GS-TH O M S O N Ä T # Kl(g«LiM(s)!0(gS BD243B/C BD244B/C COMPLEMENTARY SILICON POWER , linear and switching applications. The complementary PNP types are BD244B and BD244C respectively , Param eter NPN PNP V CBO V CEO V ebo lc IC M Ib Value BD243B BD244B 80 80 5 6 10 2 65 -65 to 150 150 , M arch 1 9 9 7 BD243B/C BD244B/C THERMAL DATA Rlh]-case Rl h] - amb Therm al Therm al , rated V ceo Ic e o fo r B D243B/BD244B fo r BD243C /B D244C Veb = E E < Ie b o 5
-
OCR Scan
BD244B/C

TRANSISTOR BD244

Abstract: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , current BD244A BD244B BD244C UNIT -55 E T E L O S B O BD244B VALUE V CEO , change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0
Bourns
Original
Abstract: BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , * MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Collector Current - Continuous Collector Current - , BD243BG BD243CG BD244BG *For additional information on our Pb-Free strategy and soldering details, please , September, 2013 - Rev. 14 Publication Order Number: BD243B/D BD243B, BD243C (NPN), BD244B, BD244C ON Semiconductor
Original

1N5825

Abstract: BD243B * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B , · Collector Emitter Sustaining Voltage - · · VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , : BD243B/D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î , mAdc, IB = 0) mAdc Min Unit - - VCEO(sus) BD243B, BD244B BD243B BD243C, BD244C
ON Semiconductor
Original

1N5825

Abstract: BD243B * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B , · Collector Emitter Sustaining Voltage - · · VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , /D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î Î , Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) mAdc Min - - VCEO(sus) BD243B, BD244B BD243B
ON Semiconductor
Original

BD243

Abstract: BD244 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO , subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0
Bourns
Original
Abstract: BD243CG BD244B BD244BG BD244C BD244CG Package Shippingâ'  TOâ'220 TOâ'220 (Pbâ'Free , BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , ' â'¢ â'¢ http://onsemi.com VCEO(sus) = 80 Vdc (Min) â' BD243B, BD244B = 100 Vdc (Min) â , Packages are Available* MAXIMUM RATINGS Rating Symbol Collectorâ'Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collectorâ'Base Voltage BD243B, BD244B BD243C, BD244C Emitterâ'Base ON Semiconductor
Original
220AB

BD243C

Abstract: BD244C BD243B/BD243C BD244B/BD244C ® COMPLEMENTARY SILICON POWER TRANSISTORS s , switching applications. The complementary PNP types are BD244B and BD244C respectively. 1 2 3 , t NPN BD243B BD243C PNP BD244B BD244C 100 V 100 V V CBO , / BD244B / BD244C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal , ition s I C = 30 mA for BD243B/BD244B for BD243C/BD244C Collector-Emitter Saturation Voltage
STMicroelectronics
Original
DSA0082460 morocco bd244c BD244B/BD244C P011C

BD243C APPLICATION

Abstract: 1N5825 Base-Emitter Resistance ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG , BD243B, BD243C* (NPN) BD244B, BD244C* (PNP) BD243C and BD244C are Preferred Devices , ) @ IC = 6.0 Adc ·Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = , Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100
ON Semiconductor
Original
BD243C APPLICATION
Abstract: general purpose amplifier and switching applications. BD243B BD243C * BD244B BD244C * *ON , Sustaining Voltage - · · VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BD243B BD244B 80 80 BD243C BD244C 100 100 Unit Vdc Vdc , ) BD243B, BD243B BD244B BD243C, BD244C ICEO ICES 0.7 mAdc µAdc BD243B, BD243C, BD244B, BD244C Collector , = 0) BD243B, BD244B BD243C, BD244C - - - 400 400 1.0 IEBO mAdc ON CHARACTERISTICS (1) DC Current ON Semiconductor
Original

BD244C

Abstract: IC 3180 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C · High Current Gain Bandwidth , Range Symbol VCEO VCB VEB BD243B BD243C* PNP BD244B BD244C* ·Motorola Preferred Dtvie* NPN BD243B BD244B 80 80 5.0 6 10 2.0 BD243C BD244C 100 100 Unit Vdc Vdc Vdc Adc 6 AMPERE POWER , Collector-Emltter Sustaining Voltage (1) (IC - 30 mAdc, I b - 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C, BD244B, BD244C Ic e s BD243B, BD244B BD243C, BD244C 'e b o - 400 400 1.0 mAdc nAdc Symbol VCEO(sus) 80
-
OCR Scan
D243B IC 3180 transistor c 3181 D243C D244B

transistor tip 3055

Abstract: Tip 3054 BD244, BD244A, BD244B, BD244C FOR POWER AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD244 BD244A BD244B Collector-Emitter Voltage (FIbe = 100 .-55 V -70 V , ;'pigmentary data may be published at a later date. Texas Instruments 2-45 BD244, BD244A, BD244B, BD244C electrical characteristics at 25 °C case temperature PARAMETER BD244 BD244A BD244B BD244C TEST CONDIT , , BD244A, BD244B, BD244C s voltage and current waveforms Dissipation derating curve Ptot='
-
OCR Scan
transistor tip 3055 Tip 3054 transistor BD 240 BD243A..C BD 245 TIP 50 transistor BD243A-C 40PEP 80PEP
Abstract: D.C. current gain * - I C = 300 mA; - V C e = 4 V - I C = 3 A ; - V Ce = 4 V BD244; A BD244B , base power transistors BD244; BD244A BD244B; BD 2 4 4 C Tâ'"33â'"21 Transition frequency at f = ,   tifeiS3T31 0011422 Q BD244; B D 2 4 4 A BD244B; B D 2 4 4 C Fig. 4 Test circuit for turn-off breakdown , power transistors BD244: BD244A BD244B; BD244C J T-33-2T Fig. 5 Safe Operating ARea; T mjj , N AMER PHILIPS/DISCRETE BD244; B D 2 4 4 A [( BD244B; BD244C l J 10-2 . 5SE D â -
OCR Scan
S3T31 BD244BM 3D244C T-33-21 53T31 S3131
Showing first 20 results.