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Part : BD242B Supplier : STMicroelectronics Manufacturer : Avnet Stock : - Best Price : $0.3779 Price Each : $0.4439
Part : BD242BG Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.2189 Price Each : $0.2319
Part : BD242B Supplier : STMicroelectronics Manufacturer : Newark element14 Stock : 960 Best Price : $0.1750 Price Each : $0.5470
Part : BD242B Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 3,632 Best Price : $0.31 Price Each : $0.31
Part : BD242B Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 1,050 Best Price : $0.18 Price Each : $0.18
Part : BD242BG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 32,171 Best Price : $0.36 Price Each : $0.36
Part : BD242BFP Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 100 Best Price : - Price Each : -
Part : BD242B Supplier : STMicroelectronics Manufacturer : TME Electronic Components Stock : 37 Best Price : $0.1949 Price Each : $0.3127
Part : BD242B Supplier : Fairchild Semiconductor Manufacturer : ComSIT Stock : 2,890 Best Price : - Price Each : -
Part : BD242B Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 628 Best Price : - Price Each : -
Part : BD242B Supplier : Motorola Manufacturer : Chip One Exchange Stock : 481 Best Price : - Price Each : -
Part : BD242BG Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 257 Best Price : - Price Each : -
Part : BD242B Supplier : STMicroelectronics Manufacturer : Chip1Stop Stock : 2,780 Best Price : $0.9860 Price Each : $0.9860
Part : BD242BG Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 100 Best Price : $0.5358 Price Each : $0.5358
Part : BD242B Supplier : STMicroelectronics Manufacturer : element14 Asia-Pacific Stock : 935 Best Price : $0.24 Price Each : $0.5680
Part : BD242B Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : 935 Best Price : £0.5240 Price Each : £0.8580
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BD242B Datasheet

Part Manufacturer Description PDF Type
BD242B Bourns PNP SILICON POWER TRANSISTORS Original
BD242B Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BD242B Motorola Complementary Silicon Plastic Power Transistors Original
BD242B Motorola 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS Original
BD242B On Semiconductor Complementary Silicon Plastic Power Transistors Original
BD242B Philips Semiconductors Silicon Epitaxial Base Power Transistors Original
BD242B Power Innovations PNP SILICON POWER TRANSISTORS Original
BD242B STMicroelectronics complementary power transistor Original
BD242B STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original
BD242B STMicroelectronics NPN power transistors Original
BD242B USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. Original
BD242B Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS Scan
BD242B Continental Device India Semiconductor Device Data Book 1996 Scan
BD242B Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan
BD242B Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BD242B Ferranti Semiconductors Quick Reference Guide 1985 Scan
BD242B Ferranti Semiconductors Power Transistors 1977 Scan
BD242B General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. Scan
BD242B Micro Electronics PNP SILICON EPITAXIAL BASE POWER TRANSISTORS Scan
BD242B Mospec POWER TRANSISTORS(3A,40W) Scan
Showing first 20 results.

BD242B

Catalog Datasheet MFG & Type PDF Document Tags

BD241

Abstract: BD241C ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Emitter-Base Voltage (IC = 0) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A IC BD241B/BD242B BD241C/BD242C Collector Current BD241/BD242 BD241A/BD242A ICM BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Base Current BD241B/BD242B BD241C/BD242C BD241/BD242 @ Tamb BD241A/BD242A = 25° C BD241B/BD242B BD241C/BD242C Power Dissipation
Comset Semiconductors
Original
BD241 BD242 BD241C BD242C BD242A BD241A BD241B/BD242B

BD242

Abstract: BD242B BD242 Collector-base voltage HAN INC Open emitter BD242B VALUE -70 V -90 -115 BD242 -45 Collector-emitter voltage -60 Open base V BD242B Emitter-base voltage , ) Collector-emitter sustaining voltage UNIT -60 IC=30mA; IB=0 V BD242B -80 BD242C VCEsat MAX , -0.3 mA BD242/A VCE=-30V; IB=0 BD242B/C BD242 ICES VCE=-45V; VBE=0 BD242A , BD242B IN TOR UC BD242C -0.2 mA -1 mA VCE=-80V; VBE=0 VCE=-100V; VBE
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Original
BD242/A/B/C BD241/A/B/C BD242B/C

BD241C

Abstract: MARKING 242B BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic , ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCES VEB IC BD242B , Assembly Location = Year = Work Week ORDERING INFORMATION Device BD241C BD242B BD242C Package TO , 155 August, 2003 - Rev. 5 Publication Order Number: BD241C/D BD241C* (NPN), BD242B (PNP , ) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc BD242B BD241C, BD242C Collector Cutoff Current (VCE
ON Semiconductor
Original
MARKING 242B npn transistor 400 volts.10 amperes 241c

D242B

Abstract: D241C Vdc (Min.) BD241B, BD242B = 100 Vdc (Min.) BD241C, BD242C · High Current Gain - Bandwidth Product f j , Temperature Flange Symbol VCEO VCES Ve b 'c BD241B BD242B 80 90 5.0 3.0 5.0 1.0 40 0.32 - 6 5 t o + 150 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Watts W /"C °C BD241B BD241C* PNP NPN BD242B BD242C , Bipolar Power Transistor Device Data BD241B B D241C BD242B BD242C ELECTRICAL CHARACTERISTICS (T c - , ) Coiiector-Emitter Saturation Voltage (IC - 3.0 Adc, lB - 600 Adc) hFE 25 10 VcE(sat) 1.2 VßE(on) 1.8 BD241B, BD242B
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D242B BD242B equivalent

BD2428

Abstract: HEP transistors BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations , CoHector-emltter voltage (ic = -30 mA) BD242A BD242B BD242C V Emitter-base vottage Continuous collector , , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS JU N E 1973 - REVISED M ARCH 1997 electrical , 0 BD242B BD242C BD242 BD242A BD2428 BD242C BD242/242A BD242B/242C Collector-emltter icES , values vary slightly with transistor parameters. 2-24 BD242, B0242A, BD242B, BD242C PNP SILICON
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OCR Scan
HEP transistors 8D242B

NT 407 F TRANSISTOR

Abstract: BD241B Emitter­Base Voltage Symbol BD241B BD242B BD241C BD242C Unit Collector­Emitter Voltage VCEO , - VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C · High , *Motorola Preferred Device BD241B BD241C* PNP BD242B BD242C* . . . designed for use in general , , VEB = 0) mAdc 200 200 BD241B, BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241B, BD241C, BD242B, BD242C ICEO BD241B, BD242B BD241C
Motorola
Original
NT 407 F TRANSISTOR NT 407 F power transistor BD241B/D
Abstract: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , "¦) BD242A BD242B VALUE -55 VCER -70 -115 BD242 -45 BD242A BD242B V CEO BD242C , , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 , Collector-emitter VCE = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B -
Original
TCS632AB TCS632AC SAS632AD TIS631AA

bd242 TRANSISTOR equivalent

Abstract: BD242B BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V , = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B -0.2
Bourns
Original
bd242 TRANSISTOR equivalent

bd242 TRANSISTOR equivalent

Abstract: BD242B BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V , = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B -0.2
Bourns
Original
631AA
Abstract: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , UNIT BD242C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD242A BD242 BD242B BD242C BD242B Continuous collector current Continuous base current Peak collector current (see , Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C PNP SILICON POWER , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 -1.2 -1.8 V V IB = 0 BD242A BD242B BD242C BD242 Bourns
Original
TCS632AH

BA241

Abstract: 30Vc amplifier and switching applications. BD241C * BD242B BD242C * *ON Semiconductor Preferred Device NPN , 500 mAdc VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C VCE = 1.2 Vdc (Max , VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector­Emitter , 1 January, 2001 ­ Rev. 8 Publication Order Number: BA241C/D BD241C BD242B BD242C 40 PD , Cutoff Current (VCE = 60 Vdc, IB = 0) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO ICES 0.3 mAdc µAdc
ON Semiconductor
Original
BA241 30Vc ba241c

bd242 TRANSISTOR equivalent

Abstract: BD242A BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (RBE = 100 ) BD242A BD242B VCER BD242B V -90 -45 VCEO BD242C -60 , BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C , V CE = -70 V V BE = 0 BD242A -0.2 cut-off current V CE = -90 V V BE = 0 BD242B
Power Innovations
Original

BD242A

Abstract: BD241 N AMER PHILIPS/DISCRETE 55E D â  bb53131 GGimGS â¡ â  BD242; BD242A BD242B; BD242C j I j , BD242; BD242A BD242B; BD242C / 1/j.^v.r iil S5E D ^53131 GOlTMOb S T-33-19 RATINGS Limiting , BD242; A < < < 0,1 BD242B;C - > -VBE < ~vCEsat < hfel > E(BR) > 0,1 0,2 mA mA, mA 0,2 , epitaxial base power transistors SSE D â  bbS3T31 QQITMO? 4 â  BD242; BD242A BD242B; BD242C Transition , Its Respective Manufacturer N AMER PHILIPS/DISCRETE BD242; BD242A BD242B; BD242C 'X 2SE D â
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OCR Scan
thermal d242 198S 241B T0-220AB T-33-T9 S3T31

bipolar transistor td tr ts tf

Abstract: BD241C BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general , (Max) @ IC = 3.0 Adc · Collector­Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min.) BD242B VCEO , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector­Emitter Voltage , Vdc, VEB = 0) mAdc 200 200 BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241C, BD242B, BD242C ICEO 0.3 mAdc 80 100 BD242B
Motorola
Original
bipolar transistor td tr ts tf BD241C-D

BD242

Abstract: BD242C CONDITIONS BD242 VCBO Collector-base voltage BD242A VALUE -55 Open emitter -70 BD242B Collector-emitter voltage -115 BD242 -45 BD242A Open base -60 BD242B Emitter-base voltage , IC=30mA; IB=0 V BD242B -80 BD242C VCEsat MAX -45 BD242A TYP. -100 , BD242/A BD242B/C VCE=-60V; IB=0 BD242 VCE=-45V; VBE=0 BD242A VCE=-60V; VBE=0 BD242B
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Original
vbe0 30v

BD242

Abstract: : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C , : BD242 : BD242A : BD242B : BD242C Collector Cut-off Current Collector Cut-off Current : BD242/A : BD242B/C : BD242 : BD242A : BD242B : BD242C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 -
Fairchild Semiconductor
Original

BD242A

Abstract: : BD242B - 80 V : BD242C - 100 V - 55 V C ollector Em itter V oltage : BD242 V ceO VcER : BD242A - 70 V : BD242B - 90 V - 115 V Em itter Base Voltage , : BD242A - 45 V - 60 lc = V : BD242B - 80 V : BD242C - 100 V C ollector , : BD242B/C - 0.3 mA V ce = - 45V, VBE= 0 - 0.2 mA : BD242A V ce = - 60V, VBE= 0 - 0.2 mA : BD242B V ce = - 80V, VBE= 0 - 0.2 mA : BD242C V ce = -1 0 0 V , VBE= 0
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OCR Scan
241/A/B/C 242/A
Abstract: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -70 -90 -115 -45 -60 UNIT BD242B BD242C BD242 V Collector-em itter voltage (lc = -30 mA) BD242A BD242B BD242C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , . Production processing does not necessarily include testing of all parameters. P BD242, BD242A, BD242B , V -90 V lo B =0 BD242A BD242B BD242C V V BE = 0 V BE = 0 V BE = 0 V BE = 0 lB = 0 -
OCR Scan

BD242S

Abstract: BD242B Transistors _ BD242, BD242A, BD242B, BD242C File Number 672 Epitaxial-Base Silicon P-N-P VERSAWATT , types BD241, BD241A, BD241B, and BD241C Types BD242, BD242A, BD242B, and BD242C are epitaxial-base , RATINGS, Absolute-Maximum Values: BD242 BD242A BD242B BD242C COLLECTOR-TO-EMITTER VOLTAGE: With , Transistors BD242, BD242A, BD242B, BD242C ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25°C characteristic symbol test conditions limits units voltage v dc current a dc bd242 bd242a bd242b
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BD242S 17533 BD242- BD241- GD17S3S 92CS-19661
Abstract: BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http , ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà à à à à ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà MAXIMUM RATINGS Symbol BD242B , BD242B TOâ'220AB 50 Units/Rail Thermal Resistance, Junctionâ'toâ'Case RqJC 3.125 °C/W BD242BG TOâ'220AB (Pbâ'Free) 50 Units/Rail BD242C TOâ'220AB 50 Units/Rail , BD242B BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0 ON Semiconductor
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BD24x

Abstract: BD241CG BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed , Symbol VCEO VCES VEB IC BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage , Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION Device BD241C BD241CG BD242B BD242BG , ) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc Collector , = 0) BD242B BD241C, BD242C ICES 200 mAdc IEBO 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain
ON Semiconductor
Original
BD24x BD242CG

400 watts amplifier circuit diagram

Abstract: BD241C-D BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol BD242B BD241C , Unit BD242B TO-220AB 50 Units/Rail Thermal Resistance, Junction to Ambient RJA 62.5 , 1 Publication Order Number: BD241C/D BD241C* (NPN), BD242B (PNP), BD242C* (PNP) PD, POWER , TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 BD241C* (NPN), BD242B
ON Semiconductor
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400 watts amplifier circuit diagram BDXXX

BD241C-D

Abstract: BD241C BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit , , Junction-to-Ambient RqJA 62.5 °C/W BD242B TO-220AB 50 Units/Rail Thermal Resistance , Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEO mAdc 200 mAdc IEBO 1.0 mAdc BD242B , ICES Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) BD242B BD241C
ON Semiconductor
Original
Showing first 20 results.