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BLM03BD241SN1D Murata Manufacturing Co Ltd Ferrite Chip, 1 Function(s), 0.2A, EIA STD PACKAGE SIZE 0201, 2 PIN visit Digikey Buy

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BD241 Datasheet

Part Manufacturer Description PDF Type
BD241 Bourns NPN SILICON POWER TRANSISTORS Original
BD241 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BD241 On Semiconductor TRANSISTOR TRANSISTOR,BJT,NPN,45V V(BR)CEO,5A I(C),TO-220AB, BIP General Purpose Power Original
BD241 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original
BD241 Power Innovations NPN SILICON POWER TRANSISTORS Original
BD241 Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS Scan
BD241 Continental Device India Semiconductor Device Data Book 1996 Scan
BD241 Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan
BD241 Continental Device India TO-220 NPN Power Package Transistors Scan
BD241 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BD241 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BD241 Ferranti Semiconductors Power Transistors 1977 Scan
BD241 General Electric Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. Scan
BD241 Micro Electronics NPN SILICON EPITAXIAL BASE POWER TRANSISTORS Scan
BD241 Micro Electronics Semiconductor Device Data Book Scan
BD241 Mospec Complementary Silicon Plastic Power Transistor Scan
BD241 Mospec POWER TRANSISTORS(3A,40W) Scan
BD241 Motorola European Master Selection Guide 1986 Scan
BD241 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD241 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BD241

Catalog Datasheet MFG & Type PDF Document Tags

B0241A

Abstract: BD241 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Copyright C 1997, Povwf InnovaUone Um , temperature (unless otherwise noted) RATINO BD241 CoHector-emitter voltage (Rgg = 100 Q) B0241A BD241B BD241C BD241 CoBector-emitter voltage (tc » 30 mA) BD241A BD241B BD241C Emitter-base voltage Continuous , MIN 45 60 80 100 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241/241A BD241B/241C TYP MAX , 2-17 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997
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NPN Transistor BD241 tpm300 BD242

BD241

Abstract: BD241C ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Emitter-Base Voltage (IC = 0) BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A IC BD241B/BD242B BD241C/BD242C Collector Current BD241/BD242 BD241A/BD242A ICM BD241B/BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Base Current BD241B/BD242B BD241C/BD242C BD241/BD242 @ Tamb BD241A/BD242A = 25° C BD241B/BD242B BD241C/BD242C Power Dissipation
Comset Semiconductors
Original
BD242C BD242A BD242/A/B/C BD241/BD242 BD241A/BD242A BD241B/BD242B BD241C/BD242C

BD241C

Abstract: BD241A Collector-Emitter Voltage : BD241 VceO 45 V : BD241A 60 V : BD241B 80 V : BD241C 100 V Collector Emitter Voltage : BD241 VcER 55 V : BD241A 70 V : BD241B 90 V : BD241C 115 V Emitter Base Voltage Vebo 5 V , Voltage : BD241 Vceo(sus) lc= 30mA, lB= 0 45 V BD241A 60 V BD241B 80 V BD241C 100 V Collector Cutoff Current : BD241/A IcEO Vce = 30V, lB=0 0.3 mA BD241B/C Vce = 60V, lB=0 0.3 mA Collector Cutoff Current : BD241 Ices Vce=45V, VBE=0 0.2 mA BD241A Vce=60V, Vbe=0 0.2 mA BD241B
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TRANSISTOR bd241 BD241/A/B/C BD241/A BD241B/C

D241C

Abstract: Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector , : BD241 : BD241A : BD241B : B D241C Collector Cutoff Current : (Tc =25 ) Symbol V ceo( sus) Iq = , qe = 100V, V be = 0 Iebo h FE V eb = 5 V , Collector Cutoff Current : BD241A : : BD241B B , BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
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B0242c

Abstract: ,V_= 0 ) (V.- 80V, V.," 0 ) (VCI= 100V.V,.= 0 ) BD241 .BD242 BD241A.BD242A BD241B.BD242B BD241C.BD242C BD241M2/41A/42A BD241 B/42B/41 C/42C BD241/42 BD241A/42A BD241 B/42B BD241C/42C , general purpose power amplifier and switching applications. NPN BD241 BD241A BD241B BD241C , 80V(Mln)- BD241B.BD242B 100V(Min)- BD241C.BD242C â'¢ DC Current Gain hFE= 25(Mn)eic- 1 ,OA , Symbol BD241 BD241A BD241B BD241C Unit BD242 BD242A BD242B B0242C Collector-Emitter Voltage VCEO
New Jersey Semiconductor
Original
BD241M2/41A/42A BD241/42 BD241A/42A BD241C/42C

BD241

Abstract: BD241A M AMER PHILIPS/DISCRETE - 2SE 5 â  L,bS3131 001^315 1 â  Il BD241; BD241A 11 BD241B; BD241C , Respective Manufacturer N AMER PHILIPS/DISCRETE: BD241; BD241A BD241B; BD241C r^/ j/i, Jl BSE D bbSB^i , bbSBTBl 00113^7 S â  BD241; BD241A BD241B; BD241C T-33-11 3 MHz lon typ. 0,3 fis t0ff typ. 1 us , Manufacturer N AMER PHILIPS/DISCRETE 2SE D â  ^53131 00113=10 7 BD241; BD241A II BD241B; BD241C JI -y V_T , â  BD241; BD241A BD241B; BD241C T-33-H 7Z88343 ~ 'cMma x â'" rô = I A l,UI 'Cmax
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S3131 T0-220AB 7Z88345 S3T31 7Z6295U

BD241

Abstract: BD241B BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 TYPICAL , Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD241, BD241A, BD241B, BD241C NPN , Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BD241, BD241A, BD241B, BD241C , Collector-emitter voltage (RBE = 100 ) BD241A BD241B VALUE VCER 70 90 BD241C 45 BD241A
Power Innovations
Original
bd242 TRANSISTOR equivalent

BD241

Abstract: bd242 TRANSISTOR equivalent BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , subject to change without notice. 1 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS , notice. 3 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING , 1·0 0·1 BD241 BD241A BD241B BD241C 0·01 1·0 10 100 1000 VCE - , Collector-emitter voltage (RBE = 100 ) BD241B VCER 70 90 BD241C 45 BD241A BD241B V CEO 60
Bourns
Original
TCS631AH TCS631AC SAS631AG TIS631AA
Abstract: Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current , itio ns Min Typ Max Unit 45 V : BD241A 60 V : BD241B 80 V , mA : BD241B V ce = 80V, V be = 0 0.2 mA : BD241C V ce = 100V, Vbe = 0 0.2 mA 1 mA Collector Cutoff Current :BD241/A IcEO : BD241B/C Collector Cutoff Current -
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transistor crossreference

Abstract: NPN Transistor BD241 : BD241 : BD241A : BD241B : BD241C Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C , =25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD241 : BD241A : BD241B : BD241C Collector Cut-off Current Collector Cut-off Current : BD241/A : BD241B/C : BD241 : BD241A : BD241B : BD241C Test Condition IC = - 30mA, IB = 0 Min. 45 60 80 100 0.3 0.3 0.2 0.2 0.2 0.2 1 , BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications · Complement to BD242/A
Fairchild Semiconductor
Original
transistor crossreference transistor cross reference TRANSISTOR b 115 fairchild

BD241

Abstract: BD242C CDIL =30mA, IB=0 ICEO BD241/242 BD241A/242A BD241B/242B BD241C/242C VCE=30V, IB=0 Collector Cut off , 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290 e-mail sales@cdil.com www.cdil.com www.cdilsemi.com BD241_242Rev_1 , Dissipation upto Ta=25ºC PD 2.0 W 16 mW/ºC DESCRIPTION BD241A BD242A BD241B BD242B , Certified Manufacturer PLASTIC POWER TRANSISTORS BD241, A, B, C NPN BD242, A, B, C PNP TO , MAXIMUM RATINGS (Ta=25ºC) SYMBOL BD241 BD242 Collector Emitter Voltage VCEO 45 Collector
Continental Device India
Original
BD242C CDIL BD241/242 BD241A/242A C-120 141102E

BD241

Abstract: BD241C BD241 VCBO Collector-base voltage BD241A VALUE 55 Open emitter 70 BD241B Collector-emitter voltage 115 BD241 45 BD241A Open base 60 BD241B Emitter-base voltage V , =0 V BD241B 80 BD241C VCEsat MAX 45 BD241A TYP. 100 Collector-emitter , V ICEO Collector cut-off current 0.3 mA 0.2 mA 1 mA BD241/A BD241B/C VCE=60V; IB=0 BD241 VCE=45V; VBE=0 BD241A VCE=60V; VBE=0 BD241B VCE=80V; VBE
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Original

bd242 TRANSISTOR

Abstract: BD241 G IRANSYS ELECTRONICS LIMITED BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS , BD241 55 BD241A 70 Collector-emitter voltage (RBE = 100 Q) BD241B VCER 90 V BD241C 115 BD241 45 BD241A 60 Collector-emitter voltage (lc = 30 mA) BD241B VCEO 80 V BD241C 100 , Q, Vcc = 20 V. BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical , Current - A Figure 3. BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE
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bd242 TRANSISTOR T0220
Abstract: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case , subject to change without notice. BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS , BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS , 0·1 BD241 BD241A BD241B BD241C E T E L O S B O 0·01 1·0 10 100 1000 Bourns
Original
Abstract: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , are subject to change without notice. 3 BD241, BD241A, BD241B, BD241C NPN SILICON POWER , 0.1 = 10% DC Operation 10 1·0 0·1 BD241 BD241A BD241B BD241C 0·01 1·0 10 , "¦) BD241A BD241B VALUE 55 VCER 70 90 BD241C 45 BD241A BD241B V CEO BD241C , , BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case -
Original

BD241B

Abstract: BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , Collector-emitter voltage (IC = 30 mA) Emitter-base voltage BD241A BD241 BD241B BD241C BD241B Continuous , . 1 BD241, BD241A, BD241B, BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25 , V V IB = 0 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241/241A BD241B/241C MIN 45 60 80 100 , Specifications are subject to change without notice. BD241, BD241A, BD241B, BD241C NPN SILICON POWER
Bourns
Original
TCS631AB

BD241

Abstract: BD242/A/B/C 0.3 mA BD241/A VCE=30V; IB=0 BD241B/C BD241 ICES VCE=45V; VBE=0 BD241A , BD241 Collector-base voltage HAN INC Open emitter BD241B VALUE 70 V 90 115 BD241 45 Collector-emitter voltage 60 Open base V BD241B Emitter-base voltage 80 BD241C VEBO UNIT 55 BD241C BD241A VCEO OND EMIC GE S BD241A VCBO CONDITIONS , ) Collector-emitter sustaining voltage UNIT 60 IC=30mA; IB=0 V BD241B 80 BD241C VCEsat MAX
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BD241

Abstract: BD241A ollecto r E m itter Voltage BD241 BD241A BD241B BD241C C ollecto r E m itter Voltage BD241 BD241A BD241B BD241C E m itter Base Voltage C o lle cto r C urrent (DC) C o lle cto r C urrent (Pulse) Base Current C o , CHARACTERISTICS rr-25 °c) Characteristic 'C o lle c to r E m itter S ustaining Voltage BD241 BD241A BD241B BD241C BD241/A BD241B/C BD241 BD241A BD241B BD241C Symbol V c e o (S U S ) Test Condition lc = 30mA, Iq = 0 , BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
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300//S
Abstract: File N um ber 671 BD241, BD241A, BD241B, BD241C Epitaxial-Base Silicon N-P-N VERSAWATT , Types BD241, B D 241A , BD 241B, and BD241C are epitaxial- BD241, BD241A, BD241B, BD241C ELECTRICAL , BD241, BD241A, BD241B, BD241C F ig . 1- M a x im u m sa fe o p e ra tin g areas f o r a ll type s , 90 80 5 5 1 40 2 115 100 5 5 1 40 2 V V V A A W W BD241A BD241B BD241C - See Fig. 2 , r0ja ms, LIM ITS BD241 M IN . _ - CURRENT A dc *C BD241A M IN . _ - BD241B M IN . - -
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BD242- 92CS-19663 92CS-2CM6

BD24IC

Abstract: B0241A Power Transistors File Number 671 BD241, BD241A, BD241B, BD241C Epitaxial-Base Silicon N-P-N VERSAWATT , types BD242, BD242A, BD242B, and BD242C Types BD241, BD241A, BD241B, and BD241C are epitaxial-base , RATINGS, Absolute-Maximum Values: BD241 BD241A BD241B BD241C COLLECTOR-TO-EMITTER VOLTAGE: With external , Electron Power Transistors _ 0 1 E 17531 T-33-II BD241, BD241 A, BD241B, BD241C ELECTRICAL , Transistors BD241, BD241 A, BD241B, BD241C [ vCCO MAX. »45 V (80241) Vcco MAX. â'¢ 60V (B0241A) IVcEO
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T0-22QAB BD24IB BD24IC BOZ41A 80241c BD242S 13A7S0 0017S3D BD241- DD17S3S 17532--D

B0241A

Abstract: TIP 32 transistor BD241, BD241A, BD241B, BD241C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , (unless otherwise noted) BD241 BD241A BD241B BD241C Collector-Emitter Voltage (RfiE = 100 .55 v , Instruments BD241, BD241A, BD241B, BD241C electrical characteristics at 25 °C case temperature PARAMETER TEST CONDITIONS BD241 MIN MAX B0241A MIN MAX BD241B MIN MAX v(BRICEO IC = 30 mA, See Note 6 là = 0 , BD241, BD241A, BD241B, BD241C VOLTAGE AND CURRENT WAVEFORMS max. safe operating area Tç s25°C 32
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TIP 32 transistor transistor TIP 32 TIP 35 transistor transistor BD 246 BDX 241 transistor BD 137 BD242A-C 40PEP 80PEP

BO 241 A

Abstract: bd2410 BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS â , Collector-Emitter Voltage : BD241 VceO 45 V : BD241A 60 V : BD241B 80 V : BD241C 100 V Collector Emitter Voltage : BD241 VcER 55 V : BD241A 70 V : BD241B 90 V : BD241C 115 V Emitter Base Voltage Vebo 5 V , Voltage : BD241 Vceo(sus) lc= 30mA, lB= 0 45 V BD241A 60 V BD241B 80 V BD241C 100 V Collector Cutoff Current : BD241/A IcEO Vce = 30V, lB=0 0.3 mA BD241B/C Vce = 60V, lB=0 0.3 mA
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BO 241 A bd2410 TF 241 BD - 100 V jc31 BD NPN transistors CB-117

T0-220B

Abstract: pj30 BD241/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS , Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241 : BD241A , Sustaining Voltage : BD241 Unit 45 60 80 100 55 70 90 115 5 3 5 1 40 150 -65 ~ 150 V , 1 mA Collector Cutoff Current :BD241/A IcEO : BD241B/C Collector Cutoff Current : BD241 Emitter Cutoff Current Ic e s h FE V eb = 5V, lc = 0 V ce= 4V, lc = 1A 25 V ce
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T0-220B pj30 241a 241B U241B
Abstract: Certified Manufacturer PLASTIC POWER TRANSISTORS BD241, A, B, C NPN BD242, A, B, C PNP TO , MAXIMUM RATINGS (Ta=25ºC) SYMBOL BD241 BD242 Collector Emitter Voltage VCEO 45 Collector , =30mA, IB=0 ICEO BD241/242 BD241A/242A BD241B/242B BD241C/242C VCE=30V, IB=0 Collector Cut off Current MIN MAX 45 60 80 100 UNIT V V V V BD241, A / 242, A mA VCE=60V, IB , PLASTIC POWER TRANSISTORS BD241, A, B, C NPN BD242, A, B, C PNP TO-220 Plastic Package ELECTRICAL -
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tip 420 transistor

Abstract: BD245C TEXAS INSTRUMENTS Power Transistors File Number 671 BD241, BD241A, BD241B, BD241C Epitaxial-Base Silicon N-P-N VERSAWATT , types BD242, BD242A, BD242B, and BD242C Types BD241, BD241A, BD241B, and BD241C are epitaxial-base , RATINGS, Absolute-Maximum Values: BD241 BD241A BD241B BD241C COLLECTOR-TO-EMITTER VOLTAGE: With external , Electron Power Transistors _ 0 1 E 17531 T-33-II BD241, BD241 A, BD241B, BD241C ELECTRICAL , VOLTAGE Vdc CURRENT A dc BD241 BOZ41A BD241B 8DZ41C UNITS VCE VBE 'c 'b MIN. MAX. MIN. MAX, MIN
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BD245 BD245A BD245B BD245C tip 420 transistor BD245C TEXAS INSTRUMENTS transistor tip 420 transistor BD245 BD246A-C
Showing first 20 results.