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BD235 Datasheet

Part Manufacturer Description PDF Type
BD235 Central Semiconductor Power Transistors TO-126 Case Original
BD235 Continental Device India Plastic Power Transistors Original
BD235 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BD235 Micro Commercial Components TRANS GP BJT NPN 60V 2A 3TO-126 Original
BD235 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original
BD235 STMicroelectronics complementary power transistor Original
BD235 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original
BD235 STMicroelectronics NPN power transistors Original
BD235 STMicroelectronics NPN power transistors Original
BD235 Transys Electronics Plastic-Encapsulated Transistors Original
BD235 Weitron NPN Epitaxial Planar Transistors Original
BD235 Continental Device India Semiconductor Device Data Book 1996 Scan
BD235 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BD235 Motorola Motorola Transistor Datasheets Scan
BD235 Motorola The European Selection Data Book 1976 Scan
BD235 Motorola European Master Selection Guide 1986 Scan
BD235 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BD235 Mullard Quick Reference Guide 1977/78 Scan
BD235 N/A Semiconductor Master Cross Reference Guide Scan
BD235 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
Showing first 20 results.

BD235

Catalog Datasheet MFG & Type PDF Document Tags

BD235

Abstract: bd237 equivalent BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN , codes Marking Package Packaging BD235 BD235 SOT-32 Tube BD237 BD237 SOT , BD235, BD237 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit BD235 BD237 VCBO Collector-base voltage (IE = 0) 60 100 V VCER , temperature Doc ID 4189 Rev 3 BD235, BD237 2 Electrical characteristics Electrical
STMicroelectronics
Original
BD238 bd237 equivalent 4189

bd237

Abstract: BD235 BD235 BD237 NPN power transistors Features . NPN transistors Applications Audio , Marking Package Packaging BD235 BD237 BD235 BD237 SOT-32 SOT-32 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 BD235 BD237 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit BD235 , -65 to 150 °C 150 °C IC TJ 2/9 Max. operating junction temperature BD235
STMicroelectronics
Original
BD236 0016114E JESD97

bd233

Abstract: MCC TM Micro Commercial Components BD233 BD235 BD237 #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 , BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Emitter-Base Voltage Collector Current (DC , Collector-Emitter Breakdown Voltage BD233 (IC=0.1Adc, IB=0) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff Current BD233 (VCB=45Vdc, IE=0) ICBO BD235 (VCB=60Vdc, IE=0) BD237 (VCB=100Vdc, IE , MAX. (Continuous) s DC 1 BD235 0.1 10 BD237 1 BD233 IC[A], COLLECTOR
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BD234/236/238

BD233

Abstract: MCC · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# BD233 BD235 BD237 , Storage Temperature Rating Collector-Emitter Voltage BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 , (sus) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff Current BD233 (VCB=45Vdc, IE=0) ICBO BD235 (VCB=60Vdc, IE=0) BD237 (VCB=100Vdc, IE=0) Emitter Cutoff Current IEBO (VBE=5.0Vdc, IC=0) DC , BD235 BD237 s 25 20 15 10 5 0.1 1 10 0 0 25 50 o 75 100 125 150
Micro Commercial Components
Original
BD233/235/237

BD233

Abstract: FT501 BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ , 141 BD233 BD235 BD237 K A IIN U S T-33-09 \ PHILIPS INTERNATIONAL 5bE D I , BD233 BD235 BD237 ShE D I 71JiDfl2b DQMEflSb STfi T-33-09 h F E l / h FE2 < 1,6 PHILIPS , BD235 BD237 PHILIPS INTERNATIONAL SbE D T -3 3 - 09 7110a5b DD45flS7 434 I PHIN Fig. 4 Safe , BD233 BD235 L I
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FT501 7Z78131 7Z62575
Abstract: !"# BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors · · · · Features Power , Temperature Storage Temperature Rating Collector-Emitter Voltage BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Rating 45 60 80 45 60 100 45 60 100 5 2 6 25 150 -65 to +150 Unit V D A K V R E B , =0.1Adc, IB=0) VCEO(sus) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff Current BD233 (VCB=45Vdc, IE=0) ICBO BD235 (VCB=60Vdc, IE=0) BD237 (VCB=100Vdc, IE=0) Emitter Cutoff Current IEBO (VBE Micro Commercial Components
Original

bd237

Abstract: BD234 % !"# Features · · · BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors , Voltage VCBO Collector-Emitter Voltage VCER VEBO IC ICP PC TJ TSTG BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 Emitter-Base Voltage Collector Current (DC) Collector Current , (IC=0.1Adc, IB=0) VCEO(sus) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff Current BD233 (VCB=45Vdc, IE=0) ICBO BD235 (VCB=60Vdc, IE=0) BD237 (VCB=100Vdc, IE=0) Emitter Cutoff
Micro Commercial Components
Original
BD234 bd235 datasheet

BD238

Abstract: BD236 BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistor in Jedec SOT , ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN BD235 BD237 PNP BD236 , PNP types voltage and current values are negative. October 1995 1/4 BD235/BD236/BD237/BD238 , ) I C = 100 mA for BD235/BD236 for BD237/BD238 Unit 0.1 2 T c = 150 o C Max. mA mA
STMicroelectronics
Original
BD235/BD236 BD235/BD236/BD237/BD238

BD237

Abstract: BD235 Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power , VCBO PARAMETER Collector-base voltage OND IC BD233 SEM GE BD235 HAN INC Open emitter BD237 BD233 VCEO Collector-emitter voltage BD235 Open base BD237 VEBO , BD233 BD235 BD237 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , ) Collector-emitter sustaining voltage BD235 IC=0.1A; IB=0 80 VCB=45V; IE=0 BD235 VCB=60V; IE
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bd237 datasheet SEM 238
Abstract: EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 , 100 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.25 10 UNIT V V V V A A W W mW/ ºC , /234 Collector Cut off Current BD235/236 VCB=60V, IE=0 VCB=100V, IE=0 BD237/238 UNIT µA µA , 100 TC = 150ºC BD233/234 VCB=45V, IE=0 BD235/236 VCB=60V, IE=0 VCB=100V, IE=0 BD237/238 Emitter Cut off Current IC=0.1A, IB=0 BD233/234 BD235/236 BD237/238 IC=1.0A, IB=0.1A IC=1.0A, VCE Continental Device India
Original
BD235/236 C-120 1221102E
Abstract: _ y \ _ BD233 BD235 BD237 SILICON EPITAXIAL-BASE , emitter) v CBO Collector-emitter voltage (open base) BD235 BD237 max* 45 60 100 , BD235 BD237 y v R A TIN G S Limiting values in accordance with the Absolute Maximum System (IE C 134) BD233 Collector-base voltage (open emitter) v CBO max. 45 BD235 60 BD237 100 , 43A 40 to 250 > MHz BD233 BD235 BD237 Silicon epitaxial-base power transistors J -
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Q03M32S 00343E7 7Z82885 003432T 7ZI2970A

BD235 PHILIPS

Abstract: BD233 BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> â  711002b 0042Ã5M 725 «PHIN SILICON , BD238. Matched pairs can be supplied. QUICK REFERENCE DATA BD233 BD235 BD237 Collector-base , Respective Manufacturer BD233 BD235 BD237 y T-33-09 V PHILIPS INTERNATIONAL SbE ]> I HAIIIMGS , BD233 BD235 BD237 Collector-base voltage (open emitter) vCBO max. 45 60 100 V Collector-emitter , transistors BD233 BD235 BD237 PHILIPS INTERNATIONAL ShE D I CHARACTERISTICS (continued) Tj = 25 °C
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BD235 PHILIPS bd233 T bd237 philips Audio amplifier circuits T3309 BD237-10

BD233

Abstract: BD234 EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 , 45 45 45 SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD BD237 BD238 100 80 100 BD235 , Current BD235/236 VCB=60V, IE=0 VCB=100V, IE=0 BD237/238 UNIT µA µA µA 2.0 2.0 2.0 mA mA , =0 BD233/234 VCB=60V, IE=0 BD235/236 VCB=100V, IE=0 BD237/238 Emitter Cut off Current IC=0.1A, IB=0 BD233/234 BD235/236 BD237/238 IC=1.0A, IB=0.1A IC=1.0A, VCE=2V Data Sheet MIN TYP 45 60
Continental Device India
Original
238r BD233-BD234 CDIL BD238 CDIL BD233

BD237

Abstract: bd235 (TA=25 unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BD233 BD235 BD237 BD233 BD235 BD237 Value 45 60 100 45 60 80 5 2 1.25 150 -65-150 Units V 0.660 0.860 VCEO , breakdown voltage BD233 BD235 BD237 Collector-emitter breakdown voltage BD233 BD235 BD237 Emitter-base breakdown voltage Collector cut-off current BD233 BD235 BD237 Emitter cut-off current unless otherwise
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Original

BD238

Abstract: BD237 / = r SGS-THOMSON BD235/BD236 BD237/BD238 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors In Jedec SOT-32 plastic package inteded for use In medium power linear and switching applications , BD235/BD236/BD237/BD238 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max " C/W , BD235/BD236/BD237/BD238 DC Current Gain (NPN type) DC Current Gain (PNPtype) Collector-Emitter
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BD235-BD236 BD237-BD238 2V102 NPN pnp MATCHED PAIRS BD239 BB237 BD23S/BD236

IC 7400

Abstract: BD233 )-Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 , °C Storage , Temperature Tstg -65 to +150 °C Device Marking BD233 = BD233 , BD235 = BD235 , BD237 = BD237 WEITRON http://www.weitron.com.tw BD233/235/237 ELECTRICAL , Voltage IC = 100µA, IE = 0 BD233 BD235 BD237 Collector-Base Breakdown Voltage IC = 10mA, IB = 0 BD233 BD235 BD237 Emitter-Base Breakdown Voltage IC = 0, IE = 100µA Collector Cutoff Current VCB
Weitron
Original
IC 7400 7400 IC symbol bd233 equivalent 290TYP

BD233

Abstract: BD235 . EMITTER Value Units 45 60 100 45 60 80 5 V V 2 A BD233 BD235 BD237 BD233 BD235 BD237 2. COLLECTOR 3. BASE 123 VCEO Collector-Emitter Voltage VEBO , = 1mA, IC=0 5 V VCB= 45V, IE=0 BD233 BD235 60 80 BD237 ICBO VCB= 60V, IE , BD235 Collector cut-off current MAX 45 BD233 BD235 MIN IEBO VEB= 5V, IC=0 HFE(1
Jiangsu Changjiang Electronics Technology
Original
transistor 45 f 123 BD235 TRANSISTOR
Abstract: Street Chatsworth !"# $ % !"# BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors A K N , Storage Temperature BD233 BD235 BD237 BD233 BD235 BD237 BD233 BD235 BD237 D V E B M V , Parameter Min Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BD233 (IC=0.1Adc, IB=0) BD235 (IC=0.1Adc, IB=0) BD237 (IC=0.1Adc, IB=0) Collector Cutoff Current BD233 (VCB=45Vdc, IE=0) ICBO BD235 , . (Continuous) DC 1 BD233 BD235 BD237 s 25 20 15 10 5 0.1 1 10 0 0 25 50 o Micro Commercial Components
Original

BD233

Abstract: BD237 Rating Unit Collector Base Voltage : BD233 Vobo 45 V : BD235 60 V : BD237 100 V Collector Emitter Voltage : BD233 Vceo 45 V : BD235 60 V : BD237 80 V Collector Emitter Voltage : BD233 VcER 45 V : BD235 60 V : BD237 100 V Emitter Base Voltage Vebo 5 V Collector Current (DC) lc 2 A Collector , BD235 60 V BD237 80 V Collector Cutoff Current BD233 IcBO VCB= 45V, Ie= 0 100 HA BD235
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BD233/23
Abstract: Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80 V 45 V : BD235 60 V : BD237 100 V 5 V C ollector Base , Sustaining Voltage Sym bol BD233 Test C ondition Min Typ M ax Unit 45 V BD235 , = 0 V 100 HA BD235 V CB = 60V, lE= 0 100 HA BD237 r"1r-* -â'™ E m itter C -
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BD237

Abstract: BD 235 , EBO BD233 BD235 BD237 45 60 80 V 45 60 80 V B 2/V.2.422/0477 A 2 53 BD 233 â'¢ BD 235 â'¢ BD 237
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BD 235 SD235 BD 237 BD 100 V 32-DIN BD NPN transistors 2DIN125A

BD235STU

Abstract: transistor BD 325 Voltage : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 : BD233 : BD235 : BD237 Value 45 60 100 45 60 80 , * Collector-Emitter Sustaining Voltage : BD233 : BD235 : BD237 Collector Cut-off Current : BD233 : BD235 : BD237 IEBO , . (Continuous) DC 1 BD233 BD235 BD237 s 25 20 15 10 5 0.1 1 10 0 0 25 50 o , Product Folder - Fairchild P/N BD235 - NPN Epitaxial Silicon Transistor SEARCH | Parametric | Cross , products space space space BD235 Products groups NPN Epitaxial Silicon Transistor Analog and Mixed Signal
Fairchild Semiconductor
Original
BD235STU transistor BD 325 BD237STU

amplificateur

Abstract: BD233 Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power , VCBO PARAMETER Collector-base voltage OND IC BD233 SEM GE BD235 HAN INC Open emitter BD237 BD233 VCEO Collector-emitter voltage BD235 Open base BD237 VEBO , BD233 BD235 BD237 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified , ) Collector-emitter sustaining voltage BD235 IC=0.1A; IB=0 80 VCB=45V; IE=0 BD235 VCB=60V; IE
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amplificateur bd 233 bo236 vertical tv deflexion CB-16
Showing first 20 results.