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Part : BD139 Supplier : STMicroelectronics Manufacturer : Avnet Stock : 20,000 Best Price : $0.2010 Price Each : $0.52
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Part : BD139 Supplier : STMicroelectronics Manufacturer : Newark element14 Stock : 6,589 Best Price : $0.2010 Price Each : $0.52
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Part : BD139-16 Supplier : STMicroelectronics Manufacturer : Newark element14 Stock : 151 Best Price : $0.1580 Price Each : $0.51
Part : BD13910STU Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 196 Best Price : $0.1880 Price Each : $0.49
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Part : BD139G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.1980 Price Each : $0.23
Part : BD13910S Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 4,494 Best Price : $0.22 Price Each : $0.27
Part : BD13910STU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 136,584 Best Price : $0.22 Price Each : $0.27
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Part : BD1396STU Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 129 Best Price : $0.22 Price Each : $0.27
Part : BD139G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 26,393 Best Price : $0.25 Price Each : $0.31
Part : NJVBD139G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 6,000 Best Price : - Price Each : -
Part : BD139 Supplier : STMicroelectronics Manufacturer : RS Components Stock : 6,854 Best Price : £0.14 Price Each : £0.19
Part : BD139-10 Supplier : STMicroelectronics Manufacturer : RS Components Stock : 1,350 Best Price : £0.1040 Price Each : £0.1710
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Part : BD139-16 Supplier : STMicroelectronics Manufacturer : RS Components Stock : 940 Best Price : £0.1810 Price Each : £0.2640
Part : BD139-16 Supplier : STMicroelectronics Manufacturer : RS Components Stock : 1,220 Best Price : £0.1810 Price Each : £0.3140
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Part : BD139 Supplier : STMicroelectronics Manufacturer : TME Electronic Components Stock : 11,865 Best Price : $0.0909 Price Each : $0.2523
Part : BD139-10 Supplier : STMicroelectronics Manufacturer : TME Electronic Components Stock : 1,581 Best Price : $0.0892 Price Each : $0.2360
Part : BD139-16 Supplier : STMicroelectronics Manufacturer : TME Electronic Components Stock : 138 Best Price : $0.0847 Price Each : $0.2049
Part : BD13916STU Supplier : ON Semiconductor Manufacturer : TME Electronic Components Stock : 1,112 Best Price : $0.1404 Price Each : $0.2401
Part : BD139 Supplier : - Manufacturer : Chip One Exchange Stock : 28 Best Price : - Price Each : -
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Part : BD139G Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 1,665 Best Price : - Price Each : -
Part : BD139-10 Supplier : STMicroelectronics Manufacturer : Chip1Stop Stock : 832 Best Price : $1.26 Price Each : $1.26
Part : BD139-16 Supplier : STMicroelectronics Manufacturer : Chip1Stop Stock : 15,016 Best Price : $1.14 Price Each : $2.53
Part : BD13910S Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 11,500 Best Price : $1.53 Price Each : $1.53
Part : BD13910STU Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 4,400 Best Price : $1.68 Price Each : $6.89
Part : BD13916STU Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 12,110 Best Price : $1.79 Price Each : $7.36
Part : BD139G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 1,000 Best Price : $1.81 Price Each : $3.77
Part : BD139G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 5,246 Best Price : $1.68 Price Each : $3.77
Part : BD139 Supplier : STMicroelectronics Manufacturer : element14 Asia-Pacific Stock : 13,379 Best Price : $0.17 Price Each : $0.6260
Part : BD139-10 Supplier : STMicroelectronics Manufacturer : element14 Asia-Pacific Stock : 84 Best Price : $0.12 Price Each : $0.5630
Part : BD139-10 Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 5,252 Best Price : $0.09 Price Each : $0.2360
Part : BD139-16 Supplier : STMicroelectronics Manufacturer : element14 Asia-Pacific Stock : 844 Best Price : $0.13 Price Each : $0.6140
Part : BD13910STU Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 311 Best Price : $0.16 Price Each : $0.5880
Part : BD13916S Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,971 Best Price : $0.16 Price Each : $0.5880
Part : BD13916STU Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,251 Best Price : $0.17 Price Each : $0.6140
Part : BD139 Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : 9,231 Best Price : £0.1320 Price Each : £0.1930
Part : BD139-10 Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 4,754 Best Price : £0.2420 Price Each : £0.5680
Part : BD139-10 Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : 622 Best Price : £0.10 Price Each : £0.31
Part : BD139-16 Supplier : STMicroelectronics Manufacturer : Farnell element14 Stock : 1,581 Best Price : £0.0876 Price Each : £0.4340
Part : BD13910STU Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 486 Best Price : £0.1480 Price Each : £0.4130
Part : BD13916S Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 1,987 Best Price : £0.1480 Price Each : £0.4130
Part : BD13916STU Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 2,518 Best Price : £0.1560 Price Each : £0.4550
Part : BD139 Supplier : STMicroelectronics Manufacturer : New Advantage Stock : 4,000 Best Price : - Price Each : -
Part : BD139-10 Supplier : STMicroelectronics Manufacturer : New Advantage Stock : 6,400 Best Price : $0.09 Price Each : $0.09
Part : BD13910S Supplier : Fairchild Semiconductor Manufacturer : New Advantage Stock : 13,750 Best Price : $0.16 Price Each : $0.17
Part : BD13916STU Supplier : Fairchild Semiconductor Manufacturer : New Advantage Stock : 10,238 Best Price : $0.15 Price Each : $0.17
Part : BD139G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 500 Best Price : $0.22 Price Each : $0.34
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BD139 Datasheet

Part Manufacturer Description PDF Type
BD139 Central Semiconductor Leaded Power Transistor General Purpose Original
BD139 Fairchild Semiconductor NPN Epitaxial Silicon Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original
BD139 Motorola Plastic Medium Power Silicon NPN Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original
BD139 On Semiconductor Plastic Medium Power Silicon NPN Transistor Original
BD139 Philips Semiconductors NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original
BD139 Philips Semiconductors NPN power transistors - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original
BD139 Philips Semiconductors NPN GENERAL PURPOSE POWER TRANSISTORS Original
BD139 Philips Semiconductors Silicon Planar Epitaxial Power Transistors Original
BD139 Siemens Cross Reference Guide 1998 Original
BD139 STMicroelectronics Complementary low voltage transistor Original
BD139 STMicroelectronics NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original
BD139 Various Russian Datasheets Transistor Original
BD139 Continental Device India NPN Plastic Power Transistor Scan
BD139 Continental Device India Semiconductor Device Data Book 1996 Scan
BD139 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
BD139 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BD139 Motorola Motorola Transistor Datasheets Scan
BD139 Motorola The European Selection Data Book 1976 Scan
BD139 Motorola European Master Selection Guide 1986 Scan
BD139 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
Showing first 20 results.

BD139

Catalog Datasheet MFG & Type PDF Document Tags

BD139

Abstract: BD140 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 Package , , VCE = -2 V 25 40 25 250 NPN IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 63 , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal
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Original
BD139 application BD140 application circuits circuits BD139 NPN transistor BD140 npn TRANSISTOR NPN BD140 of ic BD140 BD135-16/BD139-16 BD136-16/BD140-16 JESD97

BD139

Abstract: bd137 !"# BD135 BD137 BD139 )HDWXUHV · · · · 0D[LPXP5DWLQJV Rating Collector-Emitter Voltage , = 40 (Min) @IC = 150mAdc Complementary with BD136, BD138, BD140 Symbol BD135 BD137 BD139 VCEO Value , Silicon 45,60,80 Volts TO-126 A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage , Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , BD135 BD137 BD139 MCC TM Micro Commercial Components 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0
Micro Commercial Components
Original
BD135-BD137-BD139

BD135 CURVES

Abstract: BD140 application circuits circuits BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140-16 Rev , IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 63 100 160 250 PNP IEBO 0.1 10 , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal
STMicroelectronics
Original
BD135 CURVES TRANSISTOR NPN BD139 transistor BD135 BD139 time bd139 bd140 BD13910

power transistor bd139

Abstract: BD139 transistor 25 40 160 25 BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 , =150mA 40 250 hFE VCE=2.0V, IC=500mA 25 SYMBOL hFE TEST CONDITIONS VCE=2.0V, IC=150mA BD139 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed
Central Semiconductor
Original
power transistor bd139 BD139 transistor power transistor bd137 BD139 amplifier transistor bd137 TRANSISTOR BD139

bd139

Abstract: bd139 application note MCC BD135 BD137 BD139 #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth , [LPXP#3;5DWLQJV#3; Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value VCEO #1;#2;#3;#4;#5;#6;#7; Unit 45 60 80 #3; K A Vdc N Collector-Base Voltage BD135 BD137 BD139 , Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5
Micro Commercial Components
Original
bd139 application note

bd139

Abstract: BD135 BD139 NPN SILICON TRANSISTORS â  STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package , ICM BD139 45 80 V 45 80 V V A 3 C o lle c to r P e a k C u rre n t 5 , e ra tin g J u n c tio n T e m p e ra tu re 1/4 BD135/BD139 THERMAL DATA R e s is ta n c e , BD139 80 = 0 .0 5 A 0.5 V = 2 V 1 V lc = 0.5 A V ce h F E* DC C u rre n
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OCR Scan
BD135/BD139 GCS4S90 BD135/

8D139

Abstract: BDL39 BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n , circuits. The BD136, BD138 and BD140 are complementary to the BD135, BD137 and BD139 respectively. QUICK , 0034255 35ô ill BD135 BD137 BD139 yv. RATINGS Limiting values in accordance with the Absolute , . current gain ratio of matched pairs BD135/BD136; BD137/BD138; BD139/BD140 |ICl=150 mA;|VcEl = 2V BD135 BD137 BD139 max. 45 60 100 V max. 45 60 80 V max. 45 60 100 V max. 5 5 5 V max. 1,5 1,5 1,5 A max
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OCR Scan
8D139 BDL39 bdxxx Transistor 80139 BD135 NPN transistor bd139m

BD139

Abstract: bd140-10 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140 , IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 63 100 160 250 PNP Emitter cut-off , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features I Products are , and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal
STMicroelectronics
Original

transistor BD139 N

Abstract: power transistor bd139 25 190 TYP BD135-10 BD137-10 BD139-10 MIN MAX 63 160 TEST CONDITIONS VCE=2.0V, IC=150mA BD139 100 80 UNIT V V V A A A A W W °C °C/W °C/W BD139 MIN MAX 100 10 100 80 0.5 1.0 40 63 250 25 190 TYP UNIT nA µA nA V V V MHz BD135-16 BD137-16 BD139-16 , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed
Central Semiconductor
Original
transistor BD139 N BD139 N BD139 PIN DATA to126 case bd135 N transistor bd135-16 100MH

bd139

Abstract: bd137 =100MHz 190 SYMBOL TEST CONDITIONS hFE VCE=2.0V, IC=500mA BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 MIN MAX 100 250 MHz R3 (18-September 2009) Central TM Semiconductor , BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors , Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD
Central Semiconductor
Original
bd137 Transistor power transistor bd135 BD139 NPN BD139 power transistor

BD139

Abstract: =2.0V, IC=500mA BD135-10 BD137-10 BD139-10 MIN MAX 63 160 MAX 100 10 100 0.5 1.0 UNITS , BD135-16 BD137-16 BD139-16 MIN MAX 100 250 R4 (13-March 2014) BD135 BD137 BD139 SILICON , BD135 BD137 BD139 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are silicon NPN epitaxial planar transistors , (SAT) VBE(ON) hFE hFE hFE fT SYMBOL hFE BD135 45 45 BD137 BD139 60 100 60 80 5.0
Central Semiconductor
Original

8D139

Abstract: bd139 , BD139-10 Collector cutoff current versus temperature kaO ~ '(T'amh) nA BD135, BD137, BD139 ras 150 , BD135, BD137, BD139 14 Permissible pulse load Jt. rthjc = f (t); v= parameter W BD136, BD137. BD139 , range . Ic = f(Vce);Tea« = 60°C;v = 0 A B D 135, BD137, BD139 Collector current Ic = f (VBE) VCE = 2 , configuration) mA BD135, BD137. BD139 10lr Base-emitter saturation voltage v0EMt=f(jy hn =10; ramb = parameter (common emitter configuration) mA BD136, BD137. BD139 Vf 0 02 0,4 Q6 0,8 10 12V -"-"cEsot 1758
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OCR Scan
D106-V2 D110-P B0137 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 135/BD 137/BD 139/BD D106-V1 D106-V3

BD139

Abstract: BD139 N MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80
Micro Commercial Components
Original
BD139-25 BD139 p BD139 silicon transistors

BD139

Abstract: BD135 BD135 BD139 ® NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO , -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal
STMicroelectronics
Original
of bd139 CIRCUIT DIAGRAM OF BD135 CIRCUIT DIAGRAM OF BD139 transistor BD140 BD139 NPN transistor download datasheet bd139 sot 32 0016114/B

BD135 BD139

Abstract: bd139 BD135 BD139 ® NPN SILICON TRANSISTORS T ype Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES 3 DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Uni t BD139 V CBO Collector-Base Voltage (IE = 0) 45 80 V V CEO , 1.25 W -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R t hj-ca se
STMicroelectronics
Original
BD135 BD139 bd139 equivalent bd139 data sheet BD139 datasheet bd135 equivalent BD139 h parameters
Abstract: 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A A W W °C °C/W , 10 100 80 0.5 1.0 25 40 160 25 190 TYP BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 MIN MAX 100 250 UNIT nA µA nA V V V MHz (SEE REVERSE , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed Central Semiconductor
Original

BD139 N

Abstract: BD139 MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base Current Total Device , BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter Cutoff , www.mccsemi.com Revision: 2 2003/04/30 MCC BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0
Micro Commercial Components
Original
BD135,BD137,BD139 BD-135 Bd139 IC

bd139

Abstract: BD135-BD137-BD139 MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , 300 µsec, Duty cycle 2% www.mccsemi.com BD135 BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10
Micro Commercial Components
Original

BD139

Abstract: BD139 NPN BD135 BD137/BD139 NPN SILICON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 BD137 Uni t BD139 , W -65 to 150 o C 150 o C 1/4 BD135 / BD137 / BD139 THERMAL DATA R t hj-ca , . Collector-Emitter Saturation Voltage I C = 30 mA for BD135 for BD137 for BD139 I C = 0.5 A Un it µA µA
STMicroelectronics
Original
BD139I B139 BD137 SGS bd135 diagram BD137/BD139

BD139 N

Abstract: BD135,BD137,BD139 BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base , ) Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5 ms 2.0 1.0 TJ = 125°C 0.5
Shanghai Lunsure Electronic
Original
b*137 BD137 parameters

transistor bd 126

Abstract: BD139 BD135, BD137, BD139 14 Permissible pulse load Jt. rthjc = f (t); v= parameter W BD136, BD137. BD139 , range . Ic = f(Vce);Tea« = 60°C;v = 0 A B D 135, BD137, BD139 Collector current Ic = f (VBE) VCE = 2 , , BD139-10 Collector cutoff current versus temperature kaO ~ '(T'amh) nA BD135, BD137, BD139 ras 150 , configuration) mA BD135, BD137. BD139 10lr Base-emitter saturation voltage v0EMt=f(jy hn =10; ramb = parameter (common emitter configuration) mA BD136, BD137. BD139 Vf 0 02 0,4 Q6 0,8 10 12V -"-"cEsot 1758
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OCR Scan
transistor bd 126 TRANSISTOR BD 139 transistor BD 135 TRANSISTOR BC 137 BD 139 N bD 106 transistor DIN41869 DIN125A 15A3DIN

BD139 h parameters

Abstract: BD139 MOTOROLA DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , =150mA 40 250 hFE VCE=2.0V, IC=500mA 25 SYMBOL hFE TEST CONDITIONS VCE=2.0V, IC=150mA BD139 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W BD137 MIN MAX 100 10 10 60 0.5 1.0 25 40 160 25 BD139 MIN MAX 100 10 10 80 0.5 1.0
Motorola
Original
BD139 MOTOROLA BD135 transistor BD 139 transistor BD135-D bd139 pin out BD139 circuits BD135/D

bd139 application note

Abstract: power transistor bd139 to 220 EBO BD135 BD 137 BD139 45 60 80 V 45 60 80 V 5 V B 2/V.2.413/0477 A 2 BD 135 â'¢ BD 137 â'¢ BD
Philips Semiconductors
Original
power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips Philips Bd139 power transistor bd136 M3D100 MAM254 SCA53

BD 139 N

Abstract: transistor BD 141 BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features I Products are , and BD139, and the complementary PNP types are the BD136 and BD140. Figure 1. Internal , BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140 , BD135 - BD136 - BD139 - BD140 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . .
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OCR Scan
transistor BD 141 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q62702-D106-P

tfk 135

Abstract: bd139 tfk BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , BD135 BD137 BD139 VCEO 45 60 80 Vdc BD135 BD137 BD139 VCBO 45 60 100 Vdc , °C/W TO-225AA 500 Units/Box BD137G TO-225AA (Pb-Free) 500 Units/Box BD139 TO , . 1 BD135, BD137, BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , ms 1.0 TJ = 125°C 0.5 dc 0.1 0.05 BD135 BD137 BD139 0.02 0.01 1 2 5 10
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tfk 135 bd139 tfk BD 139 140 tfk bd 137 j BD 139 TFK bd139 N125A

BD139 PIN DIAGRAM

Abstract: BD135 PIN DIAGRAM BD135 BD139 ® NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO , -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal
ON Semiconductor
Original
BD139 PIN DIAGRAM BD135 PIN DIAGRAM to225aa TRANSISTOR bd 330 bd139 140 pin diagram of bd139
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