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| Part Number | Manufacturer | Description | ||||||
| 1. | Philips Semiconductors / NXP Semiconductors | NPN power transistors - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 | 44.59 Kb | 8 Pg. | ||||
| 2. | Unitra Cemi | Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 | 2172.85 Kb | 29 Pg. | ||||
| 3. | Texas Instruments | Discrete Devices 1978 | 91.16 Kb | 1 Pg. | ||||
| 4. | Texas Instruments | The Power Semiconductor Data Book 1974 | 70.62 Kb | 4 Pg. | ||||
| 5. | On Semiconductor | Plastic Medium Power Silicon NPN Transistor | 39.16 Kb | 4 Pg. | ||||
| 6. | Telefunken Electronic | Power Transistors 1977/78 | 105.17 Kb | 5 Pg. | ||||
| 7. | Motorola, Inc. | European Master Selection Guide 1986 | 34.3 Kb | 1 Pg. | ||||
| 8. | Thomson-CSF | Shortform Semiconductor Catalogue 1982 | 92.68 Kb | 1 Pg. | ||||
| 9. | Siemens Semiconductors | Cross Reference Guide 1998 | 26.71 Kb | 7 Pg. | ||||
| 10. | Continental Device India Limited | Semiconductor Device Data Book 1996 | 111.39 Kb | 1 Pg. |
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| 1. | 34.36 Kb • 4 Pages |
Abstract: ... DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or ... Labels: BD139 |
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| 2. | 72.42 Kb • 4 Pages |
Abstract: ... The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary ... Labels: BD139 |
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| 3. | 338.77 Kb • 2 Pages |
Abstract: ... BD135 BD137 BD139. Power Transistors NPN Silicon 45,60,80 Volts. TO-126. • DC Current Gain - hFE = 40 (Min) @IC = 150mAdc • Complementary with BD136, BD138, BD140. Rating Symbol Value Unit. Collector ... Labels: BD139 |
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| 4. | 66.43 Kb • 2 Pages |
Abstract: ... DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS ... Labels: BD139 |
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| 5. | 26.77 Kb • 1 Pages |
Abstract: ... BD135/BD137/BD139 TRANSISTOR (NPN) FEATURES Power dissipation P CM: 1.25 W (Tamb=25°C) Collector current I CM: 1.5 A Operating and storage junction temperature range TJ, Tstg: -55 ... Labels: BD139 |
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| 6. | 52.49 Kb • 1 Pages |
Abstract: ... TO-126 Plastic-Encapsulated Transistors BD135/BD137/BD139 TRANSISTOR (NPN) FEATURES Power dissipation P CM: 1.25 W (Tamb=25°C) Collector current I CM: 1.5 A Operating and storage ... Labels: BD139 |
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| 7. | 69.39 Kb • 2 Pages |
Abstract: ... DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS ... Labels: BD139 |
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| 8. | 4.07 Kb • 1 Pages |
Abstract: ... BD139 TO-126 80 1500 8000 40 250 190 typ. BD140 477. BD139-10 TO-126 80 1500 8000 63 160 190 typ. BD140-10 477. BD139-16 TO-126 80 1500 8000 100 250 190 typ. BD140-16 477. BD226 TO-126 45 1500 12500 40 250 ... Labels: BD139 |
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| 9. | 4.13 Kb • 1 Pages |
Abstract: ... BD139 480. BD140-10 TO-126 80 1500 8000 63 160 160 typ. BD139-10 480. BD140-16 TO-126 80 1500 8000 100 250 160 typ. BD139-16 480. BD227 TO-126 45 1500 12500 40 250 50 typ. BD226 486. BD229 TO-126 60 1500 ... Labels: BD139 |
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| 10. | 29.28 Kb • 2 Pages |
Abstract: ... : BD139. Collector Emitter Voltage : BD135 : BD137. : BD139. Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current. Collector Dissipation (TC=25°C) Collector Dissipation ... Labels: BD139 |
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