| Contextual Datasheet Results |
1 - 50 of about 101 for BD139 |
 |
First line: BD135 BD139 SILICON TRANSISTORS BD135 BD135-10 BD135-16 BD139 BD139-10 BD139-16 Marking BD135 Abstract: .. DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or .. datasheet abstract.. |
34.36 Kb |
4 Pages |
 |
 |
|
 |
First line: BD135 BD139 SILICON TRANSISTORS Type BD135 BD135-10 BD135-16 BD139 BD139-10 BD139-16 Marking Abstract: .. The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary .. datasheet abstract.. |
72.42 Kb |
4 Pages |
 |
 |
|
 |
First line: Inchange Semiconductor Product Specification Silicon Power Transistors DESCRIPTION With TO-126 package High Abstract: .. Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION · ·With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers .. datasheet abstract.. |
113.88 Kb |
3 Pages |
 |
 |
|
 |
First line: SavantIC Semiconductor Product Specification Silicon Power Transistors DESCRIPTION TO-126 package current type Abstract: .. Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers .. datasheet abstract.. |
106.47 Kb |
3 Pages |
 |
 |
|
 |
First line: BD135 BD137 BD139 Current Gain Min 150mAdc Abstract: .. BD135 BD137 BD139. Power Transistors NPN Silicon 45,60,80 Volts. TO-126. • DC Current Gain - hFE = 40 Min @IC = 150mAdc • Complementary with BD136, BD138, BD140. Rating Symbol Value Unit. Collector .. datasheet abstract.. |
338.77 Kb |
2 Pages |
 |
 |
|
 |
First line: Datasheet BD135 BD137 BD139 SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION Central Abstract: .. DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS .. datasheet abstract.. |
66.43 Kb |
2 Pages |
 |
 |
|
 |
First line: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY TO-126 Plastic-Encapsulate Transistors BD135 / BD137 / BD139 FEATURES Power dissipation PCM Abstract: .. BD135/BD137/BD139 TRANSISTOR NPN FEATURES Power dissipation P CM: 1.25 W Tamb=25°C Collector current I CM: 1.5 A Operating and storage junction temperature range TJ, Tstg: -55 .. datasheet abstract.. |
26.77 Kb |
1 Pages |
 |
 |
|
 |
First line: Transys Electronics TO-126 Plastic-Encapsulated Transistors BD135 / BD137 / BD139 FEATURES Power dissipation PCM Tamb=25 EMITTER Abstract: .. TO-126 Plastic-Encapsulated Transistors BD135/BD137/BD139 TRANSISTOR NPN FEATURES Power dissipation P CM: 1.25 W Tamb=25°C Collector current I CM: 1.5 A Operating and storage .. datasheet abstract.. |
52.49 Kb |
1 Pages |
 |
 |
|
 |
First line: BD135 / 137 / 139 MEDIUM POWER LINEAR SWITCHING APPLICATIONS EPITAXIAL SILICON TRANSISTOR TO-126 Complement BD136 Abstract: .. : BD139. Collector Emitter Voltage : BD135 : BD137. : BD139. Emitter Base Voltage Collector Current DC Collector Current Pulse Base Current Collector Dissipation TC=25 Collector Dissipation .. datasheet abstract.. |
50.26 Kb |
2 Pages |
 |
 |
|
 |
First line: Datasheet BD135 BD137 BD139 SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION Central Abstract: .. DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MAXIMUM RATINGS .. datasheet abstract.. |
69.39 Kb |
2 Pages |
 |
 |
|
 |
First line: BD135 BD136 BD139 BD140 Complementary voltage transistor Features Products pre-selected current gain Abstract: .. BD135 - BD136 BD139 - BD140. Complementary low voltage transistor. Features ■ Products are pre-selected in DC current gain. Application ■ General purpose. Description These epitaxial planar transistors .. datasheet abstract.. |
142.2 Kb |
9 Pages 
|
 |
 |
|
 |
First line: BD135 BD139 SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION BD135 BD139 silicon epitaxial Abstract: .. DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary .. datasheet abstract.. |
32.81 Kb |
4 Pages |
 |
 |
|
 |
First line: Philips Semiconductors Small-signal Transistors LEADED DEVICES continued GENERAL PURPOSE POWER TRANSISTORS TYPE Abstract: .. BD139 TO-126 80 1500 8000 40 250 190 typ. BD140 477. BD139-10 TO-126 80 1500 8000 63 160 190 typ. BD140-10 477. BD139-16 TO-126 80 1500 8000 100 250 190 typ. BD140-16 477. BD226 TO-126 45 1500 12500 40 250 .. datasheet abstract.. |
4.07 Kb |
1 Pages |
 |
 |
|
 |
First line: BD135 BD137 / BD139 SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION BD135 BD137 BD139 silicon Abstract: .. BD137/BD139. NPN SILICON TRANSISTORS. ■ SGS-THOMSON PREFERRED SALESTYPES. DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package .. datasheet abstract.. |
43.03 Kb |
4 Pages |
 |
 |
|
 |
First line: BD135 BD137 / BD139 SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION BD135 BD137 BD139 silicon Abstract: .. BD137/BD139. NPN SILICON TRANSISTOR. SGS-THOMSON PREFERRED SALESTYPES. DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed .. datasheet abstract.. |
37.22 Kb |
4 Pages |
 |
 |
|
 |
First line: Philips Semiconductors Small-signal Transistors LEADED DEVICES continued GENERAL PURPOSE POWER TRANSISTORS TYPE Abstract: .. BD139 480. BD140-10 TO-126 80 1500 8000 63 160 160 typ. BD139-10 480. BD140-16 TO-126 80 1500 8000 100 250 160 typ. BD139-16 480. BD227 TO-126 45 1500 12500 40 250 50 typ. BD226 486. BD229 TO-126 60 1500 .. datasheet abstract.. |
4.13 Kb |
1 Pages |
 |
 |
|
 |
First line: KSD135 / 137 / 139 EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement BD136 BD140 Abstract: .. : BD139. Collector Emitter Voltage : BD135 : BD137. : BD139. Emitter Base Voltage Collector Current DC Collector Current Pulse Base Current. Collector Dissipation TC=25°C Collector Dissipation .. datasheet abstract.. |
29.28 Kb |
2 Pages |
 |
 |
|
 |
First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D100 BD135 BD137 BD139 power transistors Abstract: .. BD135; BD137; BD139 NPN power transistors book, halfpage M3D100 1999 Apr 12 2 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES • High .. datasheet abstract.. |
47.04 Kb |
8 Pages |
 |
 |
|
 |
First line: BD135 BD137 BD139 Plastic Medium Power Silicon Transistor This series plastic medium-power Abstract: .. BD135, BD137, BD139. Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing .. datasheet abstract.. |
37.82 Kb |
4 Pages 
|
 |
 |
|
 |
First line: DISCRETE SEMICONDUCTORS DATA SHEET book halfpage M3D100 BD135 BD137 BD139 power transistors Abstract: .. BD135; BD137; BD139 NPN power transistors book, halfpage M3D100 1997 Mar 04 2 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES • High .. datasheet abstract.. |
65.93 Kb |
8 Pages |
 |
 |
|
 |
First line: MAXIMUM RATINGS Operating Storage Junction Temperature Range Total Device Dissipation Derate above Abstract: .. BD135 BD137 BD139. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS. 10 WATTS. CASE 77‐09 TO‐225AA TYPE. 3 2 1. STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE. BD135 BD137 BD139. http://onsemi.com .. datasheet abstract.. |
39.16 Kb |
4 Pages |
 |
 |
|
 |
First line: BD135 / 137 / 139 BD135 / 137 / 139 Medium Power Linear Switching Applications Complement BD136 BD138 BD140 respectively Abstract: .. VCEO sus Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139. IC = 30mA, IB = 0 45. 60 80. V V V. ICBO Collector Cut-off Current VCB = 30V, IE = 0 0.1 μA. IEBO Emitter Cut-off Current VEB = 5V, IC = 0 .. datasheet abstract.. |
40.39 Kb |
4 Pages |
 |
 |
|
 |
First line: MAXIMUM RATINGS Operating Storage Junction Temperature Range Total Device Dissipation Derate above Abstract: .. BD135 BD137 BD139. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS. 10 WATTS. CASE 77‐09 TO‐225AA TYPE. 3 2 1. STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE. BD135 BD137 BD139. http://onsemi.com .. datasheet abstract.. |
39.26 Kb |
4 Pages |
 |
 |
|
 |
First line: MAXIMUM RATINGS Operating Storage Junction Temperature Range Total Device Dissipation Derate above Abstract: .. BD135 BD137 BD139. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS. 10 WATTS. CASE 77‐09 TO‐225AA TYPE. BD135 BD137 BD139. http://onsemi.com 2. THERMAL CHARACTERISTICS. Characteristic. Symbol .. datasheet abstract.. |
39.66 Kb |
4 Pages |
 |
 |
|
 |
First line: BD136 / 138 / 140 SILICON TRANSISTOR DESCRIPTION EPITAXIAL SILICON TRANSISTOR BD136 / BD138 / BD140 silicon epitaxial planer transistor Abstract: .. The complementary NPN types are the BD135/BD137/ BD139. TO-126. 1. 1:EMITTER 2:COLLECTOR 3:BASE. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT. Collector-Base Voltage BD136. BD138. BD140 .. datasheet abstract.. |
76.6 Kb |
2 Pages |
 |
 |
|
 |
First line: Continental Device India Limited IS / ISO IECQ Certified Manufacturer TO-126 SOT-32 Plastic Package Abstract: .. BD135, BD137, BD139. IS / IECQC 700000 IS / IECQC 750100. IS/ISO 9002 Lic# QSC/L- 000019.2. Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer. PIN CONFIGURATION 1. EMITTER .. datasheet abstract.. |
34.73 Kb |
3 Pages |
 |
 |
|
 |
First line: Power Transistors TO-126 Case View Bottom View TYPE BVCBO BVCEO mA VCE SAT Abstract: .. BD139 BD140 1.5 12.5 100 80 63 250 150 0.5 0.5 - -. BD175 BD176 3.0 30 45 45 40 - - 150 0.8 1.0 3.0. BD177 BD178 3.0 30 60 60 40 - - 150 0.8 1.0 3.0. BD179 BD180 3.0 30 80 80 40 - - 150 0.8 1.0 3.0. BD233 BD234 2.0 25 45 45 .. datasheet abstract.. |
33.2 Kb |
1 Pages |
 |
 |
|
 |
First line: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 Abstract: .. BD135-16 BD139 BD135-6 BD135 BD136 BD136 BD136-10 BD140-10 BD136-16 BD140-10 BD136-6 .. BD139-10 BD139 BD139-16 BD139 BD139-6 BD139 BD140 BD140 BD140-10 BD140-10 BD140-16 .. datasheet abstract.. |
217.38 Kb |
47 Pages 
|
 |
 |
|
 |
First line: BD136 BD138 / BD140 SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES TRANSISTOR DESCRIPTION BD136 BD138 BD140 Abstract: .. The complementary NPN types are the BD135 BD137 and BD139. INTERNAL SCHEMATIC DIAGRAM. June 1997. 3. 2 1. SOT-32. ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Uni t. BD136 BD138 BD140. VCBO Collector .. datasheet abstract.. |
43.36 Kb |
4 Pages |
 |
 |
|
 |
First line: APPLICATION NOTE Description CAV414 AM402 Analog Microelectronics GmbH AMG developed breadboard that Abstract: .. T1 BD139 transistor, NPN, IC = 1A. D1 1N4002 diode, 1A, URRM =100V. CL1 220nF ceramic, X7R. CL2 220nF ceramic, X7R. COSCA 1.5nF ceramic, COG, ± 30ppm/°C. COSCB 100pF ceramic, COG, ± 30ppm/°C. CX1 1nF ceramic .. datasheet abstract.. |
178.26 Kb |
4 Pages 
|
 |
 |
|
 |
First line: Bipolar Transistors Cross Reference INDUSTY STANDARD REPLACEMENT NEAREST PREFERRED INDUSTY STANDARD REPLACEMENT Abstract: .. BD135-10 BD139-10 BD135-16 BD139-10 BD135-6 BD135 BD136 BD136 BD136-10 BD140-10 BD136-16 BD140-10 BD136-6 BD136 BD137 BD137 BD137-10 BD139-10 BD137-16 BD137 BD137-6 MJE182 .. datasheet abstract.. |
160.72 Kb |
35 Pages 
|
 |
 |
|
 |
First line: BD136 / 138 / 140 BD136 / 138 / 140 Medium Power Linear Switching Applications Complement BD135 BD137 BD139 respectively Abstract: .. Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively. 1 TO-126. 1. Emitter 2.Collector 3.Base. ©2000 Fairchild Semiconductor International. BD136 .. datasheet abstract.. |
40.83 Kb |
4 Pages |
 |
 |
|
 |
First line: THERMAL CHARACTERISTICS MAXIMUM RATINGS Thermal Resistance Junction Ambient Thermal Resistance Junction Case Abstract: .. BD135 BD137 BD139. 50. 0.1. 0.05. IC, COLLECTOR CURRENT AMP TJ = 125ΥC dc. 5 ms. 0.5 ms. 0.1 ms. 0.02. 3 .. datasheet abstract.. |
99.92 Kb |
4 Pages |
 |
 |
|
 |
First line: Data Book 2000-09-01 Leaded Devices 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 Abstract: .. BD139 BCP56M BCX56 BCP56 BD140 BCP53M BCX53 BCP53 BF544 BF543 BF763 BF517 BF959 BF799 BF987 BF999 BF988 BF998 BFP22 BFN24 BFN16 BFN36 BFP23 BFN25 BFN17 BFN37 BFP25 BFN26 BFN18 .. datasheet abstract.. |
40.13 Kb |
7 Pages 
|
 |
 |
|
 |
First line: Philips Semiconductors Small-signal Transistors Diodes TYPE NUMBER 1N821 1N821 1N823 1N823A 1N825 Abstract: .. BD139 BD140 BD230 BD231 BD329 BD330 BD825 BD829 BD830 BDL31 BDL32 BDP31 BDP32 .. datasheet abstract.. |
179.7 Kb |
6 Pages |
 |
 |
|
 |
First line: Philips Semiconductors Small-signal transistors SC10 / CATEGORY CROSS REFERENCE PACKAGE General purpose low-power transistors Abstract: .. BC368 BD139 BCX56 BCP68 BD230 BSR40 BDL31 BD329 BSR41 BDP31 BDX35 BSR42 BSP41 BDX36 BSR43 BSP43 BDX37 PBSS4540Z Medium power/power transistors PNP BC636 BD132 BD830 BC869 BCP51 BC638 .. datasheet abstract.. |
123.44 Kb |
5 Pages 
|
 |
 |
|
 |
First line: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Abstract: .. BD135 BD137 BD139 BD825 BD829 BCX54 BCX55 BCX56 BCP54 BCP55 BCP56 BD131 BDP32 BC368 BD329 .. datasheet abstract.. |
18.86 Kb |
6 Pages 
|
 |
 |
|
 |
First line: Cross Reference Leaded Devices 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 2x Abstract: .. BD139 BCP56M BCX56 BCP56 BD140 BCP53M BCX53 BCP53 Leaded Devices SMD-Packages SOD .. datasheet abstract.. |
26.72 Kb |
7 Pages 
|
 |
 |
|
 |
First line: BD136 BD138 / BD140 SILICON TRANSISTORS Type BD136 BD136-10 BD136-16 BD138 BD140 BD140-10 BD140-16 Abstract: .. The complementary NPN types are the BD135 BD137 and BD139. ®. INTERNAL SCHEMATIC DIAGRAM. November 2001. ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit. BD136 BD138 BD140. VCBO Collector .. datasheet abstract.. |
72.39 Kb |
4 Pages |
 |
 |
|
 |
First line: BIPOLAR TRANSISTOR INTRODUCTION BIPOLAR CROSS REFERENCE order improve overall service SGS-THOMSON introduced Abstract: .. BD135-10 BD135-10 BD139-10. BD135-16 BD135-16 BD135. BD135-6 BD135-6 BD135. BD136 BD136 BD136. BD136-10 BD136-10 BD140-10. BD136-16 BD136-16 BD136. BD136-6 BD136 BD136. BD137 BD137 BD137. BD137 .. datasheet abstract.. |
273.9 Kb |
38 Pages 
|
 |
 |
|
 |
First line: Power Transistors TO-126 Case View Bottom View TYPE BVCBO BVCEO mA VCE SAT Abstract: .. BD139 BD140 1.5 12.5 100 80 63 250 150 0.5 0.5 - -. BD175 BD176 3.0 30 45 45 40 - - 150 0.8 1.0 3.0. BD177 BD178 3.0 30 60 60 40 - - 150 0.8 1.0 3.0. BD179 BD180 3.0 30 80 80 40 - - 150 0.8 1.0 3.0. BD233 BD234 2.0 25 45 45 .. datasheet abstract.. |
39.58 Kb |
2 Pages |
 |
 |
|
 |
First line: Semiconductor SWITCHMODEt Silicon Power Transistors BUX85 designed high voltage high speed power Abstract: .. BD139. BUX85. http://onsemi.com 4. PACKAGE DIMENSIONS. CASE 221A‐09 ISSUE AA. TO‐220AB. NOTES: 1 .. datasheet abstract.. |
50.67 Kb |
4 Pages |
 |
 |
|
 |
First line: Semiconductor SWITCHMODEt Silicon Power Transistors BUX85 designed high voltage high speed power Abstract: .. BD139. BUX85. http://onsemi.com 4. PACKAGE DIMENSIONS. CASE 221A‐09 ISSUE AA. TO‐220AB. NOTES: 1 .. datasheet abstract.. |
48.41 Kb |
4 Pages |
 |
 |
|
 |
First line: Semiconductort SWITCHMODEt Silicon Power Transistors BUX85 designed high voltage high speed power Abstract: .. BD139. BUX85. http://onsemi.com 4. PACKAGE DIMENSIONS. CASE 221A‐09 ISSUE AA. TO‐220AB. NOTES: 1 .. datasheet abstract.. |
48.81 Kb |
4 Pages |
 |
 |
|
 |
First line: SPECIFICATIONS FEATURES VCEO sus VCES sus Fall time typ VCE sat max Pulse Test Pulse Abstract: .. BD139. 4 Motorola Bipolar Power Transistor Device Data. PACKAGE DIMENSIONS. CASE 221A‐06 TO‐220AB ISSUE Y. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION .. datasheet abstract.. |
114.96 Kb |
4 Pages |
 |
 |
|
 |
First line: BUX85 SWITCHMODEtNPN Silicon Power Transistors BUX85 designed high voltage high speed power Abstract: .. BD139. BUX85. http://onsemi.com 4. PACKAGE DIMENSIONS. NOTES: 1. DIMENSIONING AND TOLERANCING .. datasheet abstract.. |
60.64 Kb |
4 Pages 
|
 |
 |
|
 |
First line: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 power transistor Product specification File under Discrete Abstract: .. T1 NPN transistor BD139. 1996 Feb 06 8. Philips Semiconductors Product specification. UHF power transistor BLT70. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit .. datasheet abstract.. |
78.31 Kb |
11 Pages |
 |
 |
|
 |
First line: DISCRETE SEMICONDUCTORS DATA SHEET BLT70 power transistor Product specification Philips Semiconductors Product Abstract: .. T1 NPN transistor BD139. 1996 Feb 06 8. Philips Semiconductors Product specification. UHF power transistor BLT70. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit .. datasheet abstract.. |
57.13 Kb |
11 Pages |
 |
 |
|
 |
First line: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D100 BD136 BD138 BD140 power transistors Product Abstract: .. NPN complements: BD135, BD137 and BD139. PINNING PIN DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base Fig.1 Simplified outline TO-126; SOT32 and .. datasheet abstract.. |
47.21 Kb |
8 Pages |
 |
 |
|
 |
First line: Power bipolar transistors Selection guide December www.st.com / bipolar Electronic light ballast design-in guidelines Abstract: .. BD139 BD140 80 80 1.5 12.5 40 250 0.15 2 0.5 0.5 50 Gen. purp. BD139-10 BD140-10 80 80 1.5 12.5 63 160 0.15 2 0.5 0.5 50 Gen. purp. BD139-16 BD140-16 80 80 1.5 12.5 100 250 0.15 2 0.5 0.5 50 Gen. purp. BD179 .. datasheet abstract.. |
449.09 Kb |
10 Pages |
 |
 |
|
| |
Datasheets per page: 50 | 250 | 500 |