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| Part Number | Manufacturer | Description | ||||||
| 1. |  BD139 |
Philips Semiconductors / NXP Semiconductors | NPN power transistors - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 | 44.59 Kb | 8 Pg. | |||
| 2. | BD139 |
Unitra Cemi | Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 | 2172.85 Kb | 29 Pg. | |||
| 3. | BD139 |
Texas Instruments | Discrete Devices 1978 | 91.16 Kb | 1 Pg. | |||
| 4. | BD139 |
Texas Instruments | The Power Semiconductor Data Book 1974 | 70.62 Kb | 4 Pg. | |||
| 5. | BD139 |
On Semiconductor | Plastic Medium Power Silicon NPN Transistor | 39.16 Kb | 4 Pg. | |||
| 6. | BD139 |
Telefunken Electronic | Power Transistors 1977/78 | 105.17 Kb | 5 Pg. | |||
| 7. | BD139 |
Motorola, Inc. | European Master Selection Guide 1986 | 34.3 Kb | 1 Pg. | |||
| 8. | BD139 |
Thomson-CSF | Shortform Semiconductor Catalogue 1982 | 92.68 Kb | 1 Pg. | |||
| 9. | BD139 |
Siemens Semiconductors | Cross Reference Guide 1998 | 26.71 Kb | 7 Pg. | |||
| 10. | BD139 |
Continental Device India Limited | Semiconductor Device Data Book 1996 | 111.39 Kb | 1 Pg. |
| « Previous 1 2 3 4 5 6 Next » |
| 1. |  206.35 Kb • 2 Pages |
Abstract: ... BD135T / BD137T / BD139T. NPN SILICON EPITAXIAL POWER TRANSISTOR. These devices are designed as ... BD135T BD137T BD139T Unit. Collector Emitter Voltage VCEO 45 60 80 V. Collector Emitter Voltage ... Labels: BD139* |
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| 2. |  212.98 Kb • 2 Pages |
Abstract: ... BD135T / BD137T / BD139T. NPN SILICON EPITAXIAL POWER TRANSISTOR. These devices are designed as ... BD135T BD137T BD139T Unit. Collector Emitter Voltage VCEO 45 60 80 V. Collector Emitter Voltage ... Labels: BD139* |
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| 3. |  34.36 Kb • 4 Pages |
Abstract: ... DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec ... for BD135/BD139 group-10 for BD135/BD139 group-16 63 100. 160 250. * Pulsed: Pulse duration = 300 ... Labels: BD139* |
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| 4. |  72.42 Kb • 4 Pages |
Abstract: ... The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 ... BD135 BD139. VCBO Collector-Base Voltage (IE = 0) 45 80 V. VCEO Collector-Emitter Voltage (IB = 0 ... Labels: BD139* |
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| 5. |  338.77 Kb • 2 Pages |
Abstract: ... BD135 BD137 BD139. Power Transistors NPN Silicon 45,60,80 Volts. TO-126. • DC Current Gain - hFE ... BD139. 45 60 80. Vdc. ICBO Collector Cutoff Current. (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) 0 ... Labels: BD139* |
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| 6. |  66.43 Kb • 2 Pages |
Abstract: ... , BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio ... ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) BD135 BD137 BD139. SYMBOL TEST ... Labels: BD139* |
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| 7. |  26.77 Kb • 1 Pages |
Abstract: ... BD135/BD137/BD139 TRANSISTOR (NPN) FEATURES Power dissipation P CM: 1.25 W (Tamb=25° ... hFE(2) VCE=2V, I C=150mA BD137/BD139 40 160 DC current gain hFE(3) VCE=2V ... Labels: BD139* |
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| 8. |  52.49 Kb • 1 Pages |
Abstract: ... BD135/BD137/BD139 TRANSISTOR (NPN) FEATURES Power dissipation P CM: 1.25 W (Tamb=25° ... BD139 80 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off ... Labels: BD139* |
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| 9. |  69.39 Kb • 2 Pages |
Abstract: ... , BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed for audio ... ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) BD135 BD137 BD139. SYMBOL TEST ... Labels: BD139* |
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| 10. |  37.82 Kb • 4 Pages |
Abstract: ... BD135, BD137, BD139. Plastic Medium Power Silicon NPN Transistor This series of plastic ... BD139 TO-225AA 500 Units/Box. BD139G TO-225AA. (Pb-Free) 500 Units/Box. TO-225AA CASE 77 STYLE ... Labels: BD139*, Pb-Free |
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