BD136/138/140 BD135 BD137 BD139 BD136 BD138 BD140

TO-126 Plastic-Encapsulate Transistors BD136/138/140 TRANSISTOR (PNP) TO 126 FEATURES High Current Complement To BD135,

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136/138/140 BD136/138/140 TRANSISTOR (PNP) TO 126 FEATURES High Current Complement To BD135 BD135, BD137 BD137 And BD139 BD139 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value BD136 BD136 VCBO -45 BD138 BD138 Collector-Base Voltage -60 BD140 BD140 -45 BD138 BD138 -60 BD140 BD140 VCEO V -80 BD136 BD136 Collector-Emitter Voltage Unit -80 -5 V IC Collector Current -1.5 A PC Collector Power Dissipation 1.25 W Thermal Resistance From Junction To Ambient 100 /W VEBO RJA Emitter-Base Voltage V Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Test conditions Min Typ Max IC= -0.1mA,IE=0 BD136 BD136 -45 BD138 BD138 -60 BD140 BD140 Collector-emitter sustaining voltage V -80 VCEO(SUS)* IC=-0.03A,IB=0 BD136 BD136 -45 BD138 BD138 -60 BD140 BD140 Emitter-base breakdown voltage V(BR)EBO ICBO VCB=-30V,IE=0 IEBO VEB=-5V,IC=0 Emitter cut-off current V -0.1 VCE=-2V, IC=-150mA hFE(2)* VCE=-2V, IC=-5mA VCE=-2V, IC=-500mA A 25 hFE(3)* A -10 hFE(1)* Collector-emitter saturation voltage V -80 -5 IE=-0.1mA,IC=0 Collector cut-off current DC current gain Unit 25 * VCE(sat) VBE Base-emitter voltage * 40 250 IC=-500mA,IB=-50mA -0.5 V VCE=-2V, IC=-500mA -1 V *Pulse test: pulse width 350s, duty cycle 2.0%. CLASSIFICATION OF hFE(1) RANK 6 10 16 RANGE 40-100 63-160 100-250 A,Oct,2010