BD135/137/139 BD135 BD137 BD139 290TYP

NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead(Pb)-Free 1 2 3 TO-126 ABSOLUTE MAXIMUM

BD135/137/139 BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead(Pb)-Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD135 BD135 BD137 BD137 BD139 BD139 Unit Collector-Emitter Voltage VCBO 45 60 80 V Collector-Base Voltage VCEO 45 60 80 V Emitter-Base Voltage VEBO 5.0 5.0 5.0 V Collector Current IC 1.5 A Power Disspation PD 1.25 W Junction Temperature Tj 150 °C Storage , Temperature Tstg -55 to +150 °C Classification Of hFE(2) Rank Range 6 10 16 40-100 63-160 100-250 Device Marking BD135 BD135 = BD135 BD135 , BD137 BD137 = BD137 BD137 , BD139 BD139 = BD139 BD139 WEITRON http://www.weitron.com.tw 1/3 07-Apr-10 BD135/137/139 BD135/137/139 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Symbol Collector-Emitter Breakdown Voltage IC = 100µA, IE = 0 BD135 BD135 BD137 BD137 BD139 BD139 Collector-Base Breakdown Voltage IC = 30mA, IB = 0 Emitter-Base Breakdown Voltage IC = 0, IE = 100µA VCB = 30V, IE=0 VEB = 5.0V, IC=0 BD135 BD135 BD137 BD137 BD139 BD139 Min Max Unit V(BR)CBO 45 60 80 - V V(BR)CEO 45 60 80 - V V(BR)EBO 5.0 - V ICBO - 0.1 µA IEBO - 10 µA - ON CHARACTERISTICS DC Current Gain VCE = 2.0V, IC = 5mA VCE = 2.0V, IC = 150A VCE = 2.0V, IC = 500A hFE(1) hFE(2) hFE(3) 25 40 25 250 Collector-Emitter Saturation Voltage IC = 0.5A, IB = 50mA VCE(sat) - 0.5 V VBE - 1 V Base-Emitter Voltage VCE = 2.0V, IC = 0.5A - - TYPICAL CHARACTERISTICS WEITRON http://www.weitron.com.tw 2/3 07-Apr-10 BD135/137/139 BD135/137/139 TO-126 Outline Dimensions unit:mm TO-126 A G B Dim A B C D E G H J K L M S M H S L D C J E K WEITRON http://www.weitron.com.tw 3/3 Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290TYP 290TYP 4.480 4.680 15.300 15.700 2.100 2.300 3.900 4.100 3.200 3.000 07-Apr-10