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BBD-135-T-A Samtec Inc Board Connector, 70 Contact(s), 2 Row(s), Male, Straight, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle, ROHS COMPLIANT visit Digikey Buy
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BD135 Datasheet

Part Manufacturer Description PDF Type
BD135 Central Semiconductor NPN Silicon Transistors, TO-126 Case Original
BD135 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BD135 Micro Commercial Components Power Transistor NPN Silicon Original
BD135 Motorola Plastic Medium Power Silicon NPN Transistor Original
BD135 On Semiconductor Plastic Medium Power Silicon NPN Transistor Original
BD135 Philips Semiconductors NPN GENERAL PURPOSE POWER TRANSISTORS Original
BD135 Philips Semiconductors NPN power transistors Original
BD135 Philips Semiconductors NPN POWER TRANSISTORS Original
BD135 Philips Semiconductors Silicon Planar Epitaxial Power Transistors Original
BD135 Siemens Cross Reference Guide 1998 Original
BD135 STMicroelectronics Complementary low voltage transistor Original
BD135 STMicroelectronics Complementary low voltage transistor Original
BD135 STMicroelectronics NPN SILICON TRANSISTORS Original
BD135 Transys Electronics Plastic-Encapsulated Transistors Original
BD135 Various Russian Datasheets Transistor Original
BD135 Continental Device India NPN Plastic Power Transistor Scan
BD135 Continental Device India Semiconductor Device Data Book 1996 Scan
BD135 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan
BD135 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BD135 Motorola The European Selection Data Book 1976 Scan
Showing first 20 results.

BD135

Catalog Datasheet MFG & Type PDF Document Tags

BD139

Abstract: BD140 schematic diagram NPN Table 1. 2 PNP Device summary Order codes Marking BD135 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 , , VCE = -2 V 25 40 25 250 NPN IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 63 , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135
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Original
BD139-16 BD139 application BD140 application circuits circuits BD139 NPN transistor BD140 npn TRANSISTOR NPN BD140 of ic BD140 BD140-10 BD140-16 BD135-16/BD139-16 BD136-16/BD140-16 JESD97

BD139

Abstract: bd137 !"# BD135 BD137 BD139 )HDWXUHV · · · · 0D[LPXP5DWLQJV Rating Collector-Emitter Voltage , = 40 (Min) @IC = 150mAdc Complementary with BD136, BD138, BD140 Symbol BD135 BD137 BD139 VCEO Value , Silicon 45,60,80 Volts TO-126 A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage , Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , BD135 BD137 BD139 MCC TM Micro Commercial Components 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0
Micro Commercial Components
Original
BD135-BD137-BD139

8D139

Abstract: BDL39 BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n , circuits. The BD136, BD138 and BD140 are complementary to the BD135, BD137 and BD139 respectively. QUICK REFERENCE DATA BD135 BD137 BD 139 Collector-base voltage (open emitter) VCBO max. 45 60 100 V , 0034255 35ô ill BD135 BD137 BD139 yv. RATINGS Limiting values in accordance with the Absolute , . current gain ratio of matched pairs BD135/BD136; BD137/BD138; BD139/BD140 |ICl=150 mA;|VcEl = 2V BD135
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OCR Scan
8D139 BDL39 bdxxx power transistor bd137 Transistor 80139 bd139 bd140

power transistor bd139

Abstract: BD139 transistor 25 40 160 25 BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139 , 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD BD135
Central Semiconductor
Original
power transistor bd139 BD139 transistor BD139 amplifier transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139

BD135

Abstract: BD139 BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead(Pb)-Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD135 BD137 , 6 10 16 40-100 63-160 100-250 Device Marking BD135 = BD135 , BD137 = BD137 , BD139 = BD139 WEITRON http://www.weitron.com.tw 1/3 07-Apr-10 BD135/137/139 ELECTRICAL , Breakdown Voltage IC = 100µA, IE = 0 BD135 BD137 BD139 Collector-Base Breakdown Voltage IC = 30mA, IB
Weitron
Original
ic 139 BD-135 TO126 BD135/137/139 290TYP

bd139

Abstract: bd139 application note MCC BD135 BD137 BD139 #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; #11;#6;#7;omponents 20736 Marilla Street Chatsworth , [LPXP#3;5DWLQJV#3; Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value VCEO #1;#2;#3;#4;#5;#6;#7; Unit 45 60 80 #3; K A Vdc N Collector-Base Voltage BD135 BD137 BD139 , Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5
Micro Commercial Components
Original
bd139 application note

bd139

Abstract: M/triac bd139 BD135 BD139 NPN SILICON TRANSISTORS â  STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package , '" © E0(3) ABSOLUTE MAXIMUM RATINGS Sym bol Param eter V alu e Unit BD135 V CBO C , e ra tin g J u n c tio n T e m p e ra tu re 1/4 BD135/BD139 THERMAL DATA R e s is ta n c e , ) VcEO (s us)* C o lle c to r-E m itte r S u s ta in in g V o lta g e lc = 30 mA fo r BD135 fo r
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OCR Scan
M/triac bd139 BD135/BD139 GCS4S90 BD135/

transistor BD139 N

Abstract: power transistor bd139 25 190 TYP BD135-10 BD137-10 BD139-10 MIN MAX 63 160 TEST CONDITIONS VCE=2.0V, IC , 0.5 1.0 40 63 250 25 190 TYP UNIT nA µA nA V V V MHz BD135-16 BD137-16 BD139 , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , VEBO IC ICM IB IBM PD PD BD135 45 45 TJ,Tstg J-mb J-A BD137 60 60 5.0 1.5 2.0
Central Semiconductor
Original
transistor BD139 N BD139 N BD139 PIN DATA to126 case bd135 N transistor bd135-16 100MH

BD139 h parameters

Abstract: BD139 MOTOROLA SILICON 45, 60, 80 VOLTS 10 WATTS Plastic Medium Power Silicon NPN Transistor BD135 BD137 BD139 SEMICONDUCTOR TECHNICAL DATA Order this document by BD135/D MOTOROLA 2 Motorola Bipolar Power , , COLLECTOR­EMITTER VOLTAGE (VOLTS) 80 BD135 BD137 BD139 0.02 IC, COLLECTOR CURRENT (AMP) 0.05 0.1 , Symbol UnIt ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) BD135 BD137 BD139 BD135 BD137 BD139 PACKAGE DIMENSIONS ­B­ U F Q ­A­ NOTES: 1. DIMENSIONING AND
Motorola
Original
BD139 h parameters BD139 MOTOROLA transistor BD135 BD135 transistor BD 139 transistor BD137 parameters BD135/D

BD139

Abstract: BD139 N MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , VCE(sat) VBE(on) *Pulse test: Pulse width 300 µsec, Duty cycle 2% www.mccsemi.com BD135 , 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80
Micro Commercial Components
Original
BD139-25 BD139 p BD139 silicon transistors

BD135 CURVES

Abstract: BD140 application circuits circuits schematic diagram NPN Table 1. 2 PNP Device summary Order codes Marking BD135 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 , IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 63 100 160 250 PNP IEBO 0.1 10 , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135
STMicroelectronics
Original
BD135 CURVES BD139 time BD13910 BD140 circuits
Abstract: .Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 © 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0 Package Packing , BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features â'¢ Complement to BD136, BD138 and Fairchild Semiconductor
Original

BD135 BD139

Abstract: bd139 BD135 BD139 ® NPN SILICON TRANSISTORS T ype Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES 3 DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Uni t BD139 V CBO Collector-Base Voltage (IE = 0) 45 80 V V CEO , 1.25 W -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R t hj-ca se
STMicroelectronics
Original
BD135 BD139 CIRCUIT DIAGRAM OF BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent bd139 data sheet BD139 datasheet 0016114/B

BD139

Abstract: BD135 BD135 BD139 ® NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO , -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal
STMicroelectronics
Original
of bd139 transistor BD140 BD139 NPN transistor download datasheet BD139 NPN bd139 sot 32 BD139 circuits

bd139 pin out

Abstract: BD139 application MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value 45 60 80 VCEO Unit K A Vdc N Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , 2008/01/01 MCC BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT
Micro Commercial Components
Original
bd139 pin out

bd139

Abstract: bd137 =100MHz 190 SYMBOL TEST CONDITIONS hFE VCE=2.0V, IC=500mA BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 , BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors , Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD , MAX ICBO VCB=30V 100 ICBO VCB=30V, TC=125°C 10 IEBO VEB=5.0V 100 BVCEO IC=30mA (BD135) 45 BVCEO IC
Central Semiconductor
Original
bd137 Transistor power transistor bd135 BD135 NPN transistor BD139 power transistor

BD139

Abstract: =2.0V, IC=500mA BD135-10 BD137-10 BD139-10 MIN MAX 63 160 MAX 100 10 100 0.5 1.0 UNITS , BD135-16 BD137-16 BD139-16 MIN MAX 100 250 R4 (13-March 2014) BD135 BD137 BD139 SILICON , BD135 BD137 BD139 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are silicon NPN epitaxial planar transistors , (SAT) VBE(ON) hFE hFE hFE fT SYMBOL hFE BD135 45 45 BD137 BD139 60 100 60 80 5.0
Central Semiconductor
Original

BD139 N

Abstract: BD135,BD137,BD139 BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base , ) Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5 ms 2.0 1.0 TJ = 125°C 0.5
Shanghai Lunsure Electronic
Original
BD135,BD137,BD139 b*137 bd135 equivalent

BD139

Abstract: bd140-10 schematic diagram NPN Table 1. 2 PNP Device summary Order codes Marking BD135 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 , IC = 150 mA, VCE = 2 V BD139-10 BD135-16/BD139-16 63 100 160 250 PNP Emitter cut-off , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features I Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135
STMicroelectronics
Original

BD139

Abstract: transistor bd137 BD135/BD137/BD139(NPN) TO-126 Transistor TO-126 7.400 7.800 1. EMITTER 3.000 2.500 , VCBO VCEO VEBO IC PC TJ Tstg Parameter BD135 Collector-Base Voltage Collector-Emitter Voltage , otherwise specified) MIN TYP MAX UNIT conditions BD135 45 60 80 45 60 80 5 0.1 10 25 40 25 0.5 1 , BD135 Collector-emitter breakdown voltage V(BR)CEO* Ic=30mA,IB=0 BD137 BD139 Emitter-base , 16 100-250 BD135/BD137/BD139(NPN) TO-126 Transistor Typical Characteristics -
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Original
to-126 transistor bd135 to-126 BD135/BD137/BD139

transistor bd 126

Abstract: BD139 SILICON 45, 60, 80 VOLTS 10 WATTS Plastic Medium Power Silicon NPN Transistor BD135 BD137 BD139 SEMICONDUCTOR TECHNICAL DATA Order this document by BD135/D MOTOROLA 2 Motorola Bipolar Power , , COLLECTOR­EMITTER VOLTAGE (VOLTS) 80 BD135 BD137 BD139 0.02 IC, COLLECTOR CURRENT (AMP) 0.05 0.1 , Symbol UnIt ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) BD135 BD137 BD139 BD135 BD137 BD139 PACKAGE DIMENSIONS ­B­ U F Q ­A­ NOTES: 1. DIMENSIONING AND
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OCR Scan
transistor bd 126 TRANSISTOR BD 139 transistor BD 135 TRANSISTOR BC 137 BD 139 N bD 106 transistor DIN41869 DIN125A 15A3DIN

8D139

Abstract: bd139 Number: BD135/D ÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î , complementary circuits. BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor ON , 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 IC, COLLECTOR CURRENT (AMP) BD135 BD137 , Characteristic THERMAL CHARACTERISTICS BD135 BD137 BD139 BD135 BD137 BD139 PACKAGE DIMENSIONS TO , _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 - BD135 BD137 BD139 ON
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OCR Scan
D106-V2 D110-P B0137 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 135/BD 137/BD 139/BD D106-V1 D106-V3

TRANSISTOR BD 136

Abstract: BD137 parameters DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD BD135 , ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) BD135 SYMBOL TEST CONDITIONS MIN MAX ICBO , 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W
ON Semiconductor
Original
TRANSISTOR BD 136 BD 139 & 140 bd 139

tfk 135

Abstract: bd139 tfk BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 , schematic diagram NPN Table 1. 2 PNP Device summary Order codes Marking BD135 BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139 , BD135 - BD136 - BD139 - BD140 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . .
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OCR Scan
tfk 135 bd139 tfk BD 139 140 tfk bd 137 j TFK bd139 tfk 136 N125A

BD 139 N

Abstract: transistor BD 141 BD135 BD139 ® NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO , -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal
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OCR Scan
transistor BD 141 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q62702-D106-P

BD139-11

Abstract: BD139 DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , VEBO IC ICM IB IBM PD PD BD135 45 45 TJ,Tstg J-mb J-A BD137 60 60 5.0 1.5 2.0 , noted) BD135 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=30V 100 ICBO VCB=30V, TC=125°C 10 IEBO , 25 190 TYP BD135-10 BD137-10 BD139-10 MIN MAX 63 160 TEST CONDITIONS VCE=2.0V, IC
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OCR Scan
BD139-11 BD135C
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