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BCY78 Datasheet

Part Manufacturer Description PDF Type
BCY78 Central Semiconductor Pnp Silicon Transistor Original
BCY78 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=100M / Pwr(W)=0.36 Original
BCY78 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=100M / Pwr(W)=0.36 Original
BCY78 Crimson Semiconductor Transistor Selection Guide Scan
BCY78 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCY78 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BCY78 Micro Electronics Semiconductor Device Data Book Scan
BCY78 Motorola Motorola Transistor Datasheets Scan
BCY78 Motorola The European Selection Data Book 1976 Scan
BCY78 Motorola European Master Selection Guide 1986 Scan
BCY78 N/A Basic Transistor and Cross Reference Specification Scan
BCY78 N/A Basic Transistor and Cross Reference Specification Scan
BCY78 N/A Transistor Replacements Scan
BCY78 N/A Catalog Scans - Shortform Datasheet Scan
BCY78 N/A Shortform Transistor PDF Datasheet Scan
BCY78 N/A Cross Reference Datasheet Scan
BCY78 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BCY78 N/A Semiconductor Master Cross Reference Guide Scan
BCY78 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BCY78 N/A Shortform Transistor Datasheet Guide Scan
Showing first 20 results.

BCY78

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package Low Noise Audio Amplifier , Collector Emitter Voltage SYMBOL VCEO VCES BCY77 60 BCY78 32 BCY79 45 UNIT V 60 , =1V *IC=50mA, VCE=1V *IC=100mA, VCE=1V *ONLY BCY78/79 BCY77 >60 >60 >5 , PNP SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package ELECTRICAL , =1.25mA *IC=100mA, IB=2.5mA IC=10uA, VCE=5V Group-7 Group-8 Group-9 Group-10 Only BCY78/79 IC=2mA, VCE Continental Device India
Original
050707E BCY57/58/59 C-120
Abstract: 2 3 emitter base BCY78; BCY79 DESCRIPTION collector, connected to case DESCRIPTION PNP , SYMBOL VcBO PARAMETER collector-base voltage BCY78 BCY79 V CEO CONDITIONS open emitter open base Tamb , 220 310 460 630 400 V V V V mA mW W collector-emitter voltage BCY78 BCY79 collector current (DC) total power dissipation DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79A/III BCY78/IX; BCY79/IX BCY78/X transition frequency turn-off time lc P .o , hFE 120 180 250 380 lc = -1 0 mA; VCE = -
OCR Scan
BCY78- BCY58 BCY59 BCY78/VII BCY78/VIII BCY78/IX BCY78/X
Abstract: BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 V BCY79VIII BCY78VIII , PNP BCY78 ­ BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY78 and BCY79 are PNP transistors , Storage Temperature range Value BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 Unit -45 -32 -45 -32 -5 -5 V V V , Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value BCY79 BCY78 BCY79 BCY78 Comset Semiconductors
Original
BCY78VII BCY78X BCY78IX BCY79IX BCY79VII BCY79X
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY78; BCY79 PNP switching transistors Product , Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 FEATURES , open emitter - -32 V - -45 V BCY78 - -32 V BCY79 - -45 V BCY78 BCY79 VCEO collector-emitter voltage open base - -100 mA Tamb 45 °C - 340 mW Tcase 45 °C - 1 W BCY78/VII; BCY79/VII 120 220 BCY78/VIII; BCY79 Philips Semiconductors
Original
BCY592 BCY78 Philips BCY79-VIII MAM263 BCY79/VIII SCA54
Abstract: BCY78; BCY79 FEATURES · Low current (max. 100 mA) · Low vo ltage (max. 45 V). PINNING PIN 1 2 em , voltage BCY78 BCY79 V cE O CONDITIONS open em itter open ba se Tam b Tcase MIN. MAX. UNIT -3 2 -4 5 V V collector-em itter voltage BCY78 BCY79 -3 2 -4 5 -1 0 0 340 1 V V mA mW W , C current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BC Y 78/IX ; B C Y 7 9 /IX B C Y 7 8 /X , 134). SYMBOL VcBO PARAM ETER co lle cto r-b a se voltage BCY78 BCY79 BCY78; BCY79 CONDITIONS -
OCR Scan
MGD624
Abstract: SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package Low Noise Audio Amplifier , Collector Emitter Voltage SYMBOL VCEO VCES BCY77 60 BCY78 32 BCY79 45 UNIT V 60 , =1V *IC=50mA, VCE=1V *IC=100mA, VCE=1V *ONLY BCY78/79 BCY77 >60 >60 >5 , PNP SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package ELECTRICAL , =1.25mA *IC=100mA, IB=2.5mA IC=10ÂuA, VCE=5V Group-7 Group-8 Group-9 Group-10 Only BCY78/79 IC=2mA, VCE Continental Device India
Original
Abstract: COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector , TEST CONDITION BCY77 BCY78 VCEO IC=2mA,IB=0 >60 >32 Collector -Emitter Voltage VCES IC , =0.25mA IC=50mA,IB=1.25mA (2) IC=100mA,IB=2.5mA (1) hFE IC=10uA, VCE=5V Only BCY78/79 IC=2mA, VCE=5V Only BCY78/79 IC=10mA, VCE=1V Only BCY78/79 IC=100mA, VCE=1V (1) Only BCY78/79 IC=50mA, VCE Continental Device India
Original
Abstract: EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector -Emitter Voltage VCES 60 32 , BCY77 BCY78 VCEO IC=2mA,IB=0 >60 >32 Collector -Emitter Voltage VCES IC=10uA, VBE=0 >60 >32 , =100mA,IB=2.5mA (1) hFE IC=10uA, VCE=5V Only BCY78/79 IC=2mA, VCE=5V Only BCY78/79 IC=10mA, VCE=1V Only BCY78/79 IC=100mA, VCE=1V (1) Only BCY78/79 IC=50mA, VCE=1V (2) Small Signal Current Gain Continental Device India
Original
TYP140 TYP180 X10-4
Abstract: 1000 mW mW Junction temperature Ti max. 200 °C BCY78-BCY79- -VII -VII Vili Vili IX IX X , Small-signal current gain Output admittance Cc < 7,0 PF Ce < 15 PF F typ. < 2 6 dB dB BCY78-VII , - BCY78-VIII; BO 7Ï »-VIII , BCY78 BCY79 Collector-emitter voltage (open base) -vCEO max. 32 45 V Collector current (d.c.) -ic , Manufacturer N AI1ER PHILIPS/DISCRETE BCY78 BCY79 ^ f J blE D bbSB^ai QD57b53 TflE HAPX RATINGS -
OCR Scan
rpy18 BCY79-VII mw246 7Z72953 7Z72955
Abstract: ­ 45 Unit V V V mA mA mW W °C 1/7 BCY78-BCY79 THERMAL DATA R t h j- cas e R t h j-amb Thermal , BCY78-BCY79 ELECTRICAL CHARACTERISTICS (continued) Symbol h F E* Parameter DC Current Gain Test Conditions I , 1.5x10 ­ 4 2x10 ­ 4 2x10 ­ 4 3x10 ­ 4 3/7 BCY78-BCY79 ELECTRICAL CHARACTERISTICS (continued , BCY78-BCY79 DC Current Gain. Normalized h Parameters. Noise Figure vs. Frequency. Noise Figure (f = 1 kHz). 5/7 BCY78-BCY79 TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 STMicroelectronics
Original
Abstract: . 200 °C BCY78-BCY79- -VII -VII Vili Vili IX IX X Small-signal current gain -lc=2mA;-VGE = 5V , < 6 BCY78-VII VIII IX X BCY79-VII VIII IX u _ _ > _ 30 40 100 hFE typ. 140 200 270 340 , PHILIPS INTERNATIONAL J BCY78 BCY79 SbE D â  711005b 0042122 04^ «PHIN T-37-07 SILICON , and switching applications. QUICK REFERENCE DATA BCY78 BCY79 Collector-emitter voltage (open , By Its Respective Manufacturer BCY78 RCYZQ _ PHILIPS INTERNATIONAL SbE D 711DÃ5b 0DM21S3 70S -
OCR Scan
0DM21E 7Z72960 T-37-0 D421E 7Z72952
Abstract: 1000 mW mW Junction temperature Tj max. 200 °C BCY78â'" V II BCY79â'" V II V , typ. < BCY78-VII BCY79-VII D.C. current gain - l c = 10 M ; â'" V CE = 5 V PF dB dB V , amplifier and switching applications. QUICK REFERENCE DATA BCY78 BCY79 Collector-emitter voltage (open , 50 002-033/034/035 August 1990 245 N AflER PHILIPS/DISCRETE BCY78 BCY79 bR E bbsaiai , 134) BCY78 Collector-emitter voltage (VgE = 0) Collector-emitter voltage (open base) BCY79 -
OCR Scan
S3T31 0027L
Abstract: 100 340 120 630 150 800 BCY78 458 BCY58/VII TO-18 32 100 340 120 220 150 800 BCY78/VII 458 BCY58/VIII TO-18 32 100 340 180 310 150 800 BCY78/VIII 458 BCY58/IX TO-18 32 100 340 250 460 150 800 BCY78/IX 458 BCY58/X TO-18 32 100 340 380 630 150 800 BCY78/X 458 Philips Semiconductors
Original
PH2907A 2n2222 to-92 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistor 2n2222a data sheet to-92 transistors 458 2N2222 2N2907A 2N2222A 2N2369 2N2369A 2N3904
Abstract: =10mA VCE=1.0V, IC=100mA °C 450 BCY78-VIII BCY79-VIII MIN MAX 30 180 310 120 400 45 °C , 100 200 200 340 1.0 JC BCY78-VII BCY79-VII MIN MAX 140 TYP 120 220 80 40 BCY79 45 45 °C/W MIN MAX 15 10 20 32 45 32 45 5.0 0.60 0.70 0.60 BCY78-IX , V V V V V V V V BCY78-X BCY79-X MIN MAX 100 380 630 240 1000 60 (SEE REVERSE , DATA SHEET BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X PNP SILICON TRANSISTOR JEDEC TO Central Semiconductor
Original
BCY79-IX BCY78/BCY79 100MH
Abstract: =10μA IC=2.0mA IC=10mA IC=100mA BCY78-VII BCY79-VII MIN TYP MAX - 140 120 220 80 40 - BCY78 , 0.25 0.80 0.85 1.20 0.75 BCY78-VIII BCY79-VIII MIN MAX 30 180 310 120 400 45 - BCY78-IX BCY79-IX MIN MAX 40 250 460 160 630 60 - UNITS V V V mA mA mA mW W °C °C/W °C/W UNITS nA μA nA V V V V V V V V V V BCY78-X BCY79-X MIN MAX 100 380 630 , BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS w w w. c e n t r a l Central Semiconductor
Original
Abstract: 600 630 100 300 200 350 2N4401 169 BCY78 TO-18 32 100 340 120 630 100 400 BCY58 464 BCY78/VII TO-18 32 100 340 120 220 100 400 BCY58/VII 464 BCY78/VIII TO-18 32 100 340 180 310 100 400 BCY58/VIII 464 BCY78/IX TO-18 32 100 340 250 460 100 400 BCY58/IX 464 BCY78/X TO-18 32 100 340 380 630 100 400 BCY58/X 464 BCY79 Philips Semiconductors
Original
2n2222 to92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2905 2N2219 2N2905A 2N2219A 2N2906 2N2906A
Abstract: BCY78 BCY79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , Collector connected to case (sim. to TO-18) 7/76 66 BCY78 BCY79 THERMAL DATA Rthj-case Thermal , -0.2I5 mA I c=-100mA lB = -2.5 mA -0.12-0.25 -0.4 -0.8 V V 67 BCY78 BCY79 ELECTRICAL CHARACTERISTICS , 180 MHz 68 BCY78 BCY79 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ , = -1 mA lc=-100 mA VCC=-I0V lBi=-'B2=-10mA 400 250 ns ns 69 BCY78 BCY79 ELECTRICAL CHARACTERISTICS -
OCR Scan
bcy 78 bcy 79
Abstract: BCY78 BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in T O -1 8 m etal , A BCY78 C o lle c to r-e m itte r voltage (open base) C o lle cto r cu rre n t (d.c.) T o ta l pow , September 1994 341 BCY78 BCY79 R A T IN G S L im itin g values in accordance w ith the A b so lu te , Silicon planar epitaxial transistors BCY78 BCY79 C H A R A C T E R IS T IC S T arnb ~ 25 °C unless , -Iq = 10 m A ; -V q E = 5 V fT > 100 September 1994 343 BCY78 BCY79 C o lle cto r -
OCR Scan
BCY79C tl 342
Abstract: ) BCY79-VII, BCY78-VI1 40 BCY79-VIII, BCY78-VIII 45 BCY79-IX, BCY78-IX 60 BCY79-X, BCY78-X , Vdc, f = 1 kHz) BCY78-VII, BCY79-VII BCY78-VIII, BCY79-VIII BCY78-IX, BCY79-IX BCY78-X, BCY79-X tife , (iAdc, VCE = 5 Vdc) BCY79-VII, BCY78-VII BCY79-VIII, BCY78-VIII 30 145 BCY79-IX, BCY78-IX , BCY79-VIII, BCY78-VIII 180 250 310 BCY79-IX, BCY78-IX 250 350 460 BCY79-X, BCY78-X 380 500 630 (ic , BCY78-VIII, BCY79-VIII BCY78-IX, BCY79-IX BCY78-X, BCY79-X hie (hi le) 1.6 2.5 3.2 7.5 4.5 6 8.5 12 Kohms -
OCR Scan
BCY791x bcy791 BCV79-VII bcy79V 8CY78-
Abstract: f(T) /?th = parameter; BCY77, BCY78. BCY79 \ \ V Hl3 , BCY 77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and , Q60203-Y78-G BCY 78 VIII Q60203-Y78-H BCY 78 IX Q60203-Y78-J BCY78X Q60203-Y78-K BCY 79 VII Q60203-Y79-G , tr 50 ns u 80 ns to n 85 ( < 150) ns 'off 480 ( , Collector-emitter saturation voltage Vcu.t = f{Ic) /ife = 40, 7amB = parameter BCY78, BCY79 Z5°C. 1 BS -1 -
OCR Scan
Q62702-C327-V1 BCY77VII 1Zv transistor BCY 791x BCY77VIII Q62702-C 327-V2 327-V3 Q60203-Y79-H Q60203-Y79-J
Abstract: SIEMENS AKTIENGESELLSCHAF 25C D BCY77 BCY78 -BCY 79 Static characteristics (Tamb - 25 °C) BCY 77 BCY , > m fl235b05 000432S 4 «SIE6 C3K. UtJi'T u: SIEMENS AKTIEN6ESELLSCHAF- - 2? BCY77 BCY78 ~ BCY 79 , > 023SbQS GQ0433Q Q â  SIE6 , 5 -f- - 2 3 ¿3L u^5517 D, BCY77 BCY78 -BCY 79 SIEMENS AKTIEN6ESELLSCHAF , , BCY79 BCY 77 BCY78 _ BCY 79 h-parameter versus collector-emitter voltage } "â'¢ = 7U^TvJ = f(V=E -
OCR Scan
Q62702-C327 Q62702-C327-V2 Q62702-C327-V3 K1754 78-IX C327 BCY792 G00432S Q60203-Y78 Q60203-Y79
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY78; BCY79 PNP switching transistors Product , Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 FEATURES , open emitter - -32 V - -45 V BCY78 - -32 V BCY79 - -45 V BCY78 BCY79 VCEO collector-emitter voltage open base - -100 mA Tamb 45 °C - 340 mW Tcase 45 °C - 1 W BCY78/VII; BCY79/VII 120 220 BCY78/VIII; BCY79 -
OCR Scan
34RR 78-VIII 79IX BCY 12 Q62702- Q60203-
Abstract: BCY78 BCY79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , Collector connected to case (sim. to TO-18) 7/76 66 BCY78 BCY79 THERMAL DATA Rthj-case Thermal , -0.2I5 mA I c=-100mA lB = -2.5 mA -0.12-0.25 -0.4 -0.8 V V 67 BCY78 BCY79 ELECTRICAL CHARACTERISTICS , 180 MHz 68 BCY78 BCY79 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ , = -1 mA lc=-100 mA VCC=-I0V lBi=-'B2=-10mA 400 250 ns ns 69 BCY78 BCY79 ELECTRICAL CHARACTERISTICS -
OCR Scan
TFK 450 B2 tfk bcy 59 TFK 79 tfk bcy 58 75558 BCY790
Abstract: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and , tr 50 ns u 80 ns to n 85 ( < 150) ns 'off 480 ( , (T) /?th = parameter; BCY77, BCY78. BCY79 \ \ V Hl3 , transfer ratio hFE = f{Ic) -VCE = 1 V; Tamb = parameter BCY78 VII, BCY79 VII â'"- -k Static forward , Collector-emitter saturation voltage Vcu.t = f{Ic) /ife = 40, 7amB = parameter BCY78, BCY79 Z5°C. 1 BS -1 -
OCR Scan
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