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Part : DV18-250B-CY Supplier : Panduit Manufacturer : element14 Asia-Pacific Stock : 50 Best Price : $1.39 Price Each : $1.7040
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Part : DV18-187B-CY Supplier : Panduit Manufacturer : Master Electronics Stock : 125 Best Price : $0.57 Price Each : $0.93
Part : DV18-188B-CY Supplier : Panduit Manufacturer : Master Electronics Stock : 232 Best Price : $0.55 Price Each : $0.89
Part : DV18-206B-CY Supplier : Panduit Manufacturer : Master Electronics Stock : 299 Best Price : $0.55 Price Each : $0.89
Part : DV18-250B-CY Supplier : Panduit Manufacturer : Master Electronics Stock : 295 Best Price : $0.55 Price Each : $0.89
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BCY78/BCY79

Catalog Datasheet MFG & Type PDF Document Tags

bcy79

Abstract: BCY78 PNP BCY78 ­ BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY78 and BCY79 are PNP transistors , Storage Temperature range Value BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 Unit -45 -32 -45 -32 -5 -5 V V V , Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value BCY79 BCY78 BCY79 BCY78 Unit 450 °C/W 150 °C/W 1/4 PNP BCY78 ­ BCY79 ELECTRICAL CHARACTERISTICS Tj
Comset Semiconductors
Original
BCY78IX BCY78VII BCY78VIII BCY78X BCY79IX BCY79VII

bcy79

Abstract: BCY78 2 3 emitter base BCY78; BCY79 DESCRIPTION collector, connected to case DESCRIPTION PNP , SYMBOL VcBO PARAMETER collector-base voltage BCY78 BCY79 V CEO CONDITIONS open emitter open base Tamb , 220 310 460 630 400 V V V V mA mW W collector-emitter voltage BCY78 BCY79 collector current (DC) total power dissipation DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79A/III BCY78/IX; BCY79/IX , collector-base voltage BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 V ebo BCY78; BCY79
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OCR Scan
BCY58 BCY59 BCY78/VII BCY79/VII BCY78/VIII BCY78/IX

bcy79

Abstract: BCY78 BCY78; BCY79 FEATURES · Low current (max. 100 mA) · Low vo ltage (max. 45 V). PINNING PIN 1 2 em , voltage BCY78 BCY79 V cE O CONDITIONS open em itter open ba se Tam b Tcase MIN. MAX. UNIT -3 2 -4 5 V V collector-em itter voltage BCY78 BCY79 -3 2 -4 5 -1 0 0 340 1 V V mA mW W , C current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BC Y 78/IX ; B C Y 7 9 /IX B C Y 7 8 /X , 134). SYMBOL VcBO PARAM ETER co lle cto r-b a se voltage BCY78 BCY79 BCY78; BCY79 CONDITIONS
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OCR Scan
BCY79/VIII MGD624

BCY79

Abstract: rpy18 BCY78 BCY79 Collector-emitter voltage (open base) -vCEO max. 32 45 V Collector current (d.c.) -ic , Manufacturer N AI1ER PHILIPS/DISCRETE BCY78 BCY79 ^ f J blE D bbSB^ai QD57b53 TflE HAPX RATINGS , BCY78 BCY79 Collector-emitter voltage (Vgg = 0) ~VCES max. 32 45 V Collector-emitter voltage (open , bbSB^l DD27bSM in I BCY78 BCY79 IAPX CHARACTERISTICS Tamj-, = 25 °C unless otherwise specified BCY78 BCY79 Collector cut-off currents VBE = 0; -VCE = 25 V â'"'ces typ. < 2 20 - nA nA VBE - 0; -VCE
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OCR Scan
rpy18 BCY78-VII BCY79-VII mw246 BCY78-BCY79- 7Z72953 7Z72955

BCY77

Abstract: BCY78 SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package Low Noise Audio Amplifier , Collector Emitter Voltage SYMBOL VCEO VCES BCY77 60 BCY78 32 BCY79 45 UNIT V 60 , PNP SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package ELECTRICAL , PNP SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package ELECTRICAL , _ 79Rev_4 050707E Continental Device India Limited Data Sheet Page 3 of 5 BCY77, BCY78 BCY79
Continental Device India
Original
BCY57/58/59 C-120

BCY78

Abstract: BCY79 PHILIPS INTERNATIONAL J BCY78 BCY79 SbE D â  711005b 0042122 04^ «PHIN T-37-07 SILICON , and switching applications. QUICK REFERENCE DATA BCY78 BCY79 Collector-emitter voltage (open , '"37â'"07 BCY78 BCY79 Collector-emitter voltage (Vgg = 0) -VCES max. 32 45 V Collector-emitter voltage (open , Copyrighted By Its Respective Manufacturer Sil icori planar epitaxial transistors BCY78 BCY79 PHILIPS , â PHIN T-37-Û7 BCY78 BCY79 Collector cut-off currents typ. < o nA nA VBE = 0; -VCE = 25 V -'ces
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OCR Scan
BCY78 Philips 0DM21S3 0DM21E 7Z72960 T-37-0 D421E 7Z72952

BCY79

Abstract: amplifier and switching applications. QUICK REFERENCE DATA BCY78 BCY79 Collector-emitter voltage (open , 50 002-033/034/035 August 1990 245 N AflER PHILIPS/DISCRETE BCY78 BCY79 bR E bbsaiai , 134) BCY78 Collector-emitter voltage (VgE = 0) Collector-emitter voltage (open base) BCY79 , b S M 'in I IAPX BCY78 BCY79 Silicon planar epitaxial transistors CHARACTERISTICS Tamb = 25 , HIAPX BCY78 BCY79 J K . Collector capacitance at f = 1 MHz l E = l e = 0 ; - V CB = 1 0 V
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OCR Scan
S3T31 0027L

BCY79

Abstract: BCY592 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY78; BCY79 PNP switching transistors Product , Philips Semiconductors Product specification PNP switching transistors BCY78; BCY79 FEATURES , open emitter - -32 V - -45 V BCY78 - -32 V BCY79 - -45 V BCY78 BCY79 VCEO collector-emitter voltage open base - -100 mA Tamb 45 °C - 340 mW Tcase 45 °C - 1 W BCY78/VII; BCY79/VII 120 220 BCY78/VIII; BCY79
Philips Semiconductors
Original
BCY592 BCY79-VIII MAM263 BCY79/IX BCY78/X SCA54

bcy 79

Abstract: bcy 78 BCY78 BCY79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , Collector connected to case (sim. to TO-18) 7/76 66 BCY78 BCY79 THERMAL DATA Rthj-case Thermal , -0.2I5 mA I c=-100mA lB = -2.5 mA -0.12-0.25 -0.4 -0.8 V V 67 BCY78 BCY79 ELECTRICAL CHARACTERISTICS , 180 MHz 68 BCY78 BCY79 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ , = -1 mA lc=-100 mA VCC=-I0V lBi=-'B2=-10mA 400 250 ns ns 69 BCY78 BCY79 ELECTRICAL CHARACTERISTICS
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OCR Scan
bcy 79 bcy 78
Abstract: SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package Low Noise Audio Amplifier , Collector Emitter Voltage SYMBOL VCEO VCES BCY77 60 BCY78 32 BCY79 45 UNIT V 60 , PNP SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package ELECTRICAL , SILICON PLANAR TRANSISTORS BCY77, BCY78 BCY79 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS , Sheet Page 3 of 5 BCY77, BCY78 BCY79 TO-18 Metal Can Package TO-18 Metal Can Package A G Continental Device India
Original

tl 342

Abstract: BCY79C BCY78 BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in T O -1 8 m etal , September 1994 341 BCY78 BCY79 R A T IN G S L im itin g values in accordance w ith the A b so lu te , Silicon planar epitaxial transistors BCY78 BCY79 C H A R A C T E R IS T IC S T arnb ~ 25 °C unless , -Iq = 10 m A ; -V q E = 5 V fT > 100 September 1994 343 BCY78 BCY79 C o lle cto r , 520 344 September 1994 r Silicon planar epitaxial transistors BCY78 BCY79 S w itch
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OCR Scan
tl 342 BCY79C

BCY78X

Abstract: BCY79 BCY 77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and , tr 50 ns u 80 ns to n 85 ( < 150) ns 'off 480 ( , f(T) /?th = parameter; BCY77, BCY78. BCY79 \ \ V Hl3 , Collector-emitter saturation voltage Vcu.t = f{Ic) /ife = 40, 7amB = parameter BCY78, BCY79 Z5°C. 1 BS -1 , BCY78, BCY79 103 10"1 5 10° 5 ID1 ^ 5 102 ItlA Current gain-bandwidth product fT=f(Ic) -Vce = 5V; T
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OCR Scan
Q62702-C327-V1 BCY77VII BCY 791x BCY77VIII 1Zv transistor Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H

BCY79-VIII

Abstract: bcy79 DATA SHEET BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial , IC=10µA (BCY79) BVCEO IC=2.0mA (BCY78) BVCEO IC=2.0mA (BCY79) BVEBO IE=1.0µA VCE(SAT) IC , SIDE) R3 BCY78/BCY79 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS Continued SYMBOL fT , Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA Thermal Resistance BCY78
Central Semiconductor
Original
BCY78-VIII BCY78-X BCY79-X BCY79-IX BCY78-IX BCY78/BCY79 100MH

BCY77

Abstract: BCY79 BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and , tr 50 ns u 80 ns to n 85 ( < 150) ns 'off 480 ( , (T) /?th = parameter; BCY77, BCY78. BCY79 \ \ V Hl3 , transfer ratio hFE = f{Ic) -VCE = 1 V; Tamb = parameter BCY78 VII, BCY79 VII â'"- -k Static forward , Collector-emitter saturation voltage Vcu.t = f{Ic) /ife = 40, 7amB = parameter BCY78, BCY79 Z5°C. 1 BS -1
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OCR Scan
zr 4.7v Q62702-C327 Transistor 78 L 05 Q60203-Y78-J Q60203-Y78-K Q60203-Y79-G Q60203-Y79-H Q60203-Y79-J

1B57

Abstract: BCY78 BCY78 BCY79 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions Min. Typ. Max. Unit , -10 mA VCE =-5V f = 100 MHz 180 MHz 23 BCY78 BCY79 ELECTRICAL CHARACTERISTICS (continued , BCY78 SILICON PLANAR PNP BCY 79 LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , Collector connected to ease v,.V7 ? v �7 21 (sim. to TO-18) 7/76 BCY78 BOY 79 THERMAL DATA , time lc= -10 mA VCC=-10V 'bi= -1 b2~ -1 mA lc=-100 mA VCC=-10V ibi=-IB2=-10 mA 400 250 ns ns 24 BCY78
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OCR Scan
1B57 G-1B57 G-1860
Abstract: COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector , TEST CONDITION BCY77 BCY78 VCEO IC=2mA,IB=0 >60 >32 Collector -Emitter Voltage VCES IC , ) IC=100mA,VCE=1V (1) Data Sheet UNIT V V V mA mA mW W deg C K/W K/W BCY79 UNIT >45 , =0.25mA IC=50mA,IB=1.25mA (2) IC=100mA,IB=2.5mA (1) hFE IC=10uA, VCE=5V Only BCY78/79 IC=2mA, VCE Continental Device India
Original

BCY78

Abstract: BCY77 EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector -Emitter Voltage VCES 60 32 , BCY77 BCY78 VCEO IC=2mA,IB=0 >60 >32 Collector -Emitter Voltage VCES IC=10uA, VBE=0 >60 >32 , ) Data Sheet UNIT V V V mA mA mW W deg C K/W K/W BCY79 UNIT >45 V >45 V >5.0 V , =100mA,IB=2.5mA (1) hFE IC=10uA, VCE=5V Only BCY78/79 IC=2mA, VCE=5V Only BCY78/79 IC=10mA, VCE
Continental Device India
Original
TYP140 TYP180 X10-4

bcy59 equivalent

Abstract: BUY69 BCY78 BCY79 T018 T018 PNP PNP 32 32 5 45 45 5 120 630 2 120 630 2 100 100 Low Level Amplifier/Switch
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OCR Scan
BS9365 BD253 BU105 BU108 BUY69 BC326 bcy59 equivalent BSCECC F011 transistor BS9000 BS9363

BCY791x

Abstract: bcy791 100 nA (VCE = 45 V) BCY79 Series 0.2 100 (VCE = 32 V. TA = 100°C, VBE = 0.2 V) BCY78 Series icex 20 liAdc (VCE = 45 V, TA = 100°C. VBE = 0.2 V) BCY79 Series 20 (VCE = 25 V, TA - 150°) BCY78 , FIGURE 8 - TOTAL PERMISSIBLE POWER DISSIPATION (BCY78/BCY79) .Rihic , Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BCY78 Series V(BR)CEO 32 Vdc 0c = 10 mAdc, IC = 0) BCY79 Series 45 Emitter-Base Breakdown Voltage all V(BR)EBO
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OCR Scan
BCY791x bcy791 BCV79-VII BCY79X bcy79V bcy79viii

KS6060

Abstract: BCY59 . The PNP Complementary types are BCY78, BCY79 respectively. MAXJ MUM RATINGS(Ta=25°C unless otherwise
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OCR Scan
KS6060 BCY59-VII T0-18

2N4033

Abstract: 2001 PNP TO-92 TO -18 TO -39 TO -39 PNP BCX78 BCY70 BCY71 BCY78 BCY79 BFX30 BSR602' BSR612) BSR622' BSS46 BSS46
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OCR Scan
BSV12 MPSA642 2N4033 2001 PNP TO-92 TO-92 2001 BSS46-10 BSS622 BSS68 BSV15 BSV16

2n2222 h 331 transistors

Abstract: 2N2222A 331 BCY71 BCY72 BCY78 BCY79 JA100 JA101 JC327 JC327A JC328 JC556 JC557 JC558 JC559 JC560 MPS3702 MPS3703 , BCX79 BCY70 BCY71 BCY72 BCY78 BCY79 BFT44 BFT45 BFX29 BFX30 BFX87 BFX88 BSR60 BSR61 BSR62 BSS60 32 45 40
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OCR Scan
BC337 BC550 JC337A 2n2222 h 331 transistors 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 2n2222 331 transistors BC107 BC108 BC109 BC140 BC141
Showing first 20 results.