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BCY58 Datasheet

Part Manufacturer Description PDF Type
BCY58 Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36 Original
BCY58 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36 Original
BCY58 STMicroelectronics LOW NOISE AUDIO AMPLIFIER Original
BCY58 Central Semiconductor BJT: NPN: Silicon Epitaxial Transistor: IC 0.2A Scan
BCY58 Continental Device India Semiconductor Device Data Book 1996 Scan
BCY58 Crimson Semiconductor Transistor Selection Guide Scan
BCY58 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCY58 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BCY58 Infineon Technologies TRANS GP BJT NPN 32V 0.2A 3TO-18 Scan
BCY58 ITT Semiconductors Transistors 1980 Scan
BCY58 Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36 Scan
BCY58 Micro Electronics Semiconductor Devices Scan
BCY58 Micro Electronics Low Level and General Purpose Amplifiers Scan
BCY58 Micro Electronics Semiconductor Device Data Book Scan
BCY58 Motorola Motorola Transistor Datasheets Scan
BCY58 Motorola The European Selection Data Book 1976 Scan
BCY58 Motorola European Master Selection Guide 1986 Scan
BCY58 N/A Basic Transistor and Cross Reference Specification Scan
BCY58 N/A Shortform Transistor PDF Datasheet Scan
BCY58 N/A Transistor Replacements Scan
Showing first 20 results.

BCY58

Catalog Datasheet MFG & Type PDF Document Tags

BCY58

Abstract: TYP50 40 >100 IC=2mA,VCE=5V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10 , =1V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10 VCE(Sat) IC=10mA, IB=0.25mA IC=100mA, IB , IC=2mA, VCE=5V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10
Continental Device India
Original
BCY59 TYP50 X10-4 cdil bcy58-8 BCY581 BCY78/79 BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10

BCY59

Abstract: BCY58 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors Product , Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES , . UNIT open emitter - - 32 V - - 45 V BCY58 - - 32 V BCY59 , - 1 W 120 170 220 BCY58 BCY59 VCEO collector-emitter voltage IC , mA; VCE = 5 V BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII 180 250 310 BCY58/IX; BCY59
Philips Semiconductors
Original
BCY78 BCY79 Transistor BCY58 BCY792 BCY59-VIII VII-80 transistor bcy58 IX MAM264 BCY58/VII BCY58/VIII BCY58/IX

BCY59

Abstract: Transistor BCY58 current gain BCY58/VII; BCY59A/II BCY58A/III; BCY59/VIII BCY58AX; BCY59/IX BCY58/X; BCY59/X DC current , current (max. 100 mA) · Low voltage (max. 45 V). BCY58; BCY59 PINNING PIN 1 2 3 emitter base , voltage BCY58 BCY59 collector-emitter voltage BCY58 BCY59 collector current (DC) total power dissipation DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X , NPN switching transistors BCY58; BCY59 LIMITING VALUES In accordance with the Absolute Maximum
-
OCR Scan
Bcy59 III transistor bcy59 BCV78 BCY58/X BCY59/VH

BCY58

Abstract: Transistor BCY58 IC=10uA,VCE=5V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10 UNITS V V nA nA >20 >40 >100 IC=2mA,VCE=5V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10 Continental , =1V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10 VCE(Sat) IC=10mA, IB=0.25mA IC=100mA, IB , IC=2mA, VCE=5V BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10
Continental Device India
Original
C-120

BCY59

Abstract: BCY58 BCY58VII Typ.20 >120 80 >40 >125 , BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 V BCY59VIII BCY58VIII >20 Typ.95 >180 , NPN BCY58 ­ BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors , Storage Temperature range Value BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 Unit 45 32 45 32 7 7 V V V 200
Comset Semiconductors
Original
BCY58X BCY58IX BCY59VII bcy59 equivalent BCY58V

BCY59

Abstract: bcv59 CHARACTERISTICS (continued) BCY58VII BCY59VII BCY58VIII BCY59VIM BCY58IX BCY59IX BCY58X BCY59X D.C. current , Junction temperature Ti max. 200 200 OC BCY58-BCY59- -VII -VII Vili Vili IX IX X X Small-signal , N AUER PHILIPS/DISCRETE LIE D â  bbS3T31 â¡â¡27bE3 EMS BCY58 BCY59 IAPX SILICON PLANAR , , for use in amplifier and switching applications. QUICK REFERENCE DATA BCY58 BCY59 , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BCY58 BCY59 bTE D 0027b24 Ifll HAPX
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OCR Scan
bcv59 71519 BCY59-10 S3T31

BCY59

Abstract: BCY58 BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications , Maximum Ratings Symbol Value Unit Collector Emitter Voltage BCY58 Vces 32 V BCY59 Vces 45 V Collector Emitter Voltage BCY58 Vceo 32 V BCY59 Vceo 45 V Emitter Base Voltage Vebo 7 V Collector , 58 BCY58, BCY59 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit h-Parameters at VCE , V Collector Cutoff Current at VCE = 32 V BCY58 Ices - 0.2 10 nA at VCE = 45 V BCY59 Ices -
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OCR Scan
bcy59v BCY 85

KS6060

Abstract: BCY59 ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors BCY58, VII, VIII , SEMICONDUCTOR BCY58, BCY59 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process , noted) BCY58 SYMBOL BCY59 UNIT CES ^CEO tfEB0 'C B Collector-Emitter Voltage Collector-Emitter , =5-0V BVCE0 lc=2.0mA(BCY58 Series) BVceo lc=2.0mA(BCY59 Series) BVEB0 IE=1-OyA VCE(SAT) 'c=^0mA, lB=0.25mA VCE , ) BCY58 SERIES MIN BCY59 SERIES MAX UNIT 10 nA 10 UA 10 nA 32 V 45 V 7.0 V 0.05
-
OCR Scan
KS6060 BCY59-VII T0-18 100MH

bcy591x

Abstract: BCY59 BCY58VIII BCY58IX BCY58X BCY59VII BCY59VIII BCY59IX BCY59X D.C. current gain > 20 40 100 lc= 10/UA , Junction temperature Tj max. 200 200 OC BCY58-BCY59 -VII -VII Vili Vili IX IX X X Small-signal , BCY58 BCY59 PHILIPS INTERNATIONAL SbE D â  SILICON PLANAR EPITAXIAL TRANSISTORS 7110a2b , the case, for use in amplifier and switching applications. QUICK REFERENCE DATA BCY58 BCY59 , Copyrighted By Its Respective Manufacturer BCY58 _ BCY59 PHILIPS INTERNATIONAL JA _ SbE D I RATINGS
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OCR Scan
bcy591x bcy591 bcy581x rs-2 BCY58 Philips silicon planar epitaxial transistors 00M2CH2 T-3S-07 T-35-07

8CY59

Abstract: BCY58 BCY58- 7 BCY58- 8 BCY58- 9 BCY58-10 NPN NPN NPN NPN NPN TO-18 TO -18 TO-18 TO-18 TO-18 32
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OCR Scan
8CY59 BVE80 BCX74-25 8CX74-40 BCX75 BCX75-I6 BCX75-25

BCY59

Abstract: BCY58 BCY58 BCY 59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon , . Unit Ices Collector cutoff current (VBE = 0) for BCY58 VCF = 32V VCE=32V Tamb = 150°C for BCY59 VCF , -0.2V) for BCY58 Vce=32V Tamb = 100°C for BCY59 Vce=45V Tamb = 100°C 20 20 MA MA 'ebo Emitter cutoff current , 300 /-is; duty cycle = 1% 12 BCY58 BCY59 DC current gain Collector-emitter saturation voltage 0
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OCR Scan

Y59 r 120

Abstract: ) BCY58VII BCY59VII BCY58VIII BCY59VIII BCY58IX BCY58X BCY59IX BCY59X D.C. current gain I q = 10 , BCY58â'" II V BCY59â'" II V V III V III IX IX Small-signal current gain at Tj = 25 °C lc , N AUER PHILIPS/DISCRETE f.l D e'E bb53^31 DQS7bE3 245 BCY58 BCY59 IAPX SILICON , to the case, for use in ampli­ fier and switching applications. QUICK REFERENCE DATA BCY58 BCY59 , System (IEC 134) BCY58 BCY59 32 V CES max. 45 V Collector-emitter voltage (open
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OCR Scan
Y59 r 120 7Z694Z0

2n2222 to-92

Abstract: 2N2222A TO-92 2N4401 TO-92 40 600 630 150 300 250 250 2N4403 165 BCY58 TO-18 32 100 340 120 630 150 800 BCY78 458 BCY58/VII TO-18 32 100 340 120 220 150 800 BCY78/VII 458 BCY58/VIII TO-18 32 100 340 180 310 150 800 BCY78/VIII 458 BCY58/IX TO-18 32 100 340 250 460 150 800 BCY78/IX 458 BCY58/X TO-18 32 100 340 380 630 150 800 BCY78/X 458
Philips Semiconductors
Original
PH2907A 2n2222 to-92 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistor 2n2222a data sheet to-92 transistors 458 2N2222 2N2907A 2N2222A 2N2369 2N2369A 2N3904

bcy59x

Abstract: BCY59-VIII =100mA, IB=2.5mA BCY58-VII BCY59-VII MIN MAX 20 TYP 120 220 80 40 BCY58-VIII BCY59-VIII MIN MAX 20 180 310 , W °C °C/W °C/W MIN MAX 10 10 10 32 45 32 45 7.0 0.35 0.70 0.85 1.20 BCY58-X BCY59-X MIN MAX 100 380 630 240 1000 60 0.60 0.75 BCY58-IX BCY59-IX MIN MAX 40 250 460 160 630 60 UNITS nA µA nA , DATA SHEET BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial
Central Semiconductor
Original
BCY58/BCY59

BCY59

Abstract: transistor bcy58 IX 0.39 1 mW W ­ 65 to 200 °C 1/6 BCY58-BCY59 THERMAL DATA R t h j- cas e R t h j-amb , 45 60 60 BCY58-BCY59 ELECTRICAL CHARACTERISTICS (continued) Symbol hfe Parameter Small , %. DC Current Gain. Collector-emitter Saturation Voltage. 3/6 BCY58-BCY59 Transition , Noise Figure (f = 10 kHz). Noise Figure vs. Frequency. 4/6 BCY58-BCY59 TO-18 MECHANICAL , 5/6 BCY58-BCY59 Information furnished is believed to be accurate and reliable. However
STMicroelectronics
Original

BCY59C

Abstract: bcy59 BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 m etal package , applications. Q U IC K R E F E R E N C E D A T A BCY58 BC Y 59 C o lle c to r-e m itte r voltage (open base) C , 1994 325 BCY58 BCY59 R A T IN G S L im itin g values in accordance w ith the A bsolute M axim , 1994 S ilicon planar ep itaxia l transistors BCY58 BCY59 C H A R A C T E R IS T IC S Tj = 25 , < < fT > c r ty p . < 2 6 dB dB September 1994 327 BCY58 BCY59 C H A R A C T E
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OCR Scan

BCY59

Abstract: BCY58 BCY58 SILICON PLANAR NPN BCY 59 LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon , Dimensions in mm Collector connected to case (sim. to TO-18) 55 7/76 BCY58 BCY 59 THERMAL DATA 'th , conditions Min. Typ. Max. Unit lCES Collector cutoff current (VBE = 0) for BCY58 VCE = 32 V Vce=32V Tamb = , Collector cutoff current (VBE: = -0.2V) for BCY58 Vce=32V Tamb = 100°C for BCY59 Vce=45V Tamb = 100°C 20 , voltage lc = 2 mA for BCY58 for BCY59 32 45 V V ^CE(sat)* Collector-emitter saturation voltage lc
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OCR Scan

2N2222A TO-92

Abstract: 2n2222 to92 630 100 400 BCY58 464 BCY78/VII TO-18 32 100 340 120 220 100 400 BCY58/VII 464 BCY78/VIII TO-18 32 100 340 180 310 100 400 BCY58/VIII 464 BCY78/IX TO-18 32 100 340 250 460 100 400 BCY58/IX 464 BCY78/X TO-18 32 100 340 380 630 100 400 BCY58/X 464 BCY79
Philips Semiconductors
Original
2n2222 to92 2N2219 transistor equivalent 2n2906 2N2907 PNP Transistor to 92 2N3904-152 2n2907 TO-92 2N2905 2N2219 2N2905A 2N2219A 2N2906 2N2906A

65e7

Abstract: BCY65 65 E Total permissible power dissipation Ptot=f(T) /?,â'ž = parameter; VCEs;VCEO , BCY58. BCY59 , \ \ \ \ th3 imb \ V \ S \ V Permissible pulse load K /ihjc. = 'C); »-parameter W BCY58 , circuit) BCY58, BCY59. BCY65 E Output characteristics Ic = f{ Vct) /B = parameter (common emitter circuit) BCY58, BCY59, BCY65 E Output characteristics Ic = f(Vci) IB = parameter (common emitter circuit) mA BCY58, BCY59, BCY65E / -30 ¡lA / â'" 25 (L A~ J,uA â'" / I -2 I
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OCR Scan
Q60203-Y58-G Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K Q60203-Y65-E8 65e7 59VIII BCY 59 Q60203-Y
Abstract: 0.85 1.20 BCY58-VIII BCY59-VIII MIN MAX 20 180 310 120 400 45 - UNITS V V V mA mA mA mW W °C °C/W °C/W BCY58-IX BCY59-IX MIN MAX 40 250 460 160 630 60 - BCY58-X , =5.0V, VCE=5.0V, VCE=1.0V, VCE=1.0V, IC=10μA IC=2.0mA IC=10mA IC=100mA BCY58-VII BCY59-VII MIN , BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY58 and BCY59 series types are silicon Central Semiconductor
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BCY 68

Abstract: BCY58 2SC D â  Ã¶23Sb05 GGQMBOb NPN Silicon Planar Transistors I SIEG 25C 04306 D BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 cases (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable , D â  Ã›SBSbOS QQQ430? S «SIEG _25C 04307 D" SIEMENS AKTIENûESELLSCHAF_ BCY58 BCY59 BCY65E , % 1730 E-03 353 25C D â  flSBSbOS 0004306 7 »SIEG , 25C 04308 0 SIEMENS AKTIENfiESELLSCHAF- BCY58 BCY59
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OCR Scan
Q60203-Y58 Q60203-Y58-H Q60203-Y59 Q60203-Y59-G Q60203-Y59-H 0431I BCY 68 BCY68 Q60203-Y65-S2

BCY 59

Abstract: BCY 12 2SC D â  Ã¶23Sb05 GGQMBOb NPN Silicon Planar Transistors I SIEG â p- I? & 3 25C 04306 D BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 , AKTIEN6ESELLSCHAF_ BCY58 BCY59 BCY 65 E Static characteristics (Tamb = 25°C) Type BCY 65 E BCY 65 E BCY 65 ,   fl23SbüS 00GM30à ? HSIE6 , 25C 04308 0 SIEMENS AKTIENÛESELLSCHAF- BCY58 BCY59 BCY65E Dynamic , \ \ \ m \ \ 100 200-C BCY58 BCY59 BCY 65 E Permissible pulse load K fthjc =
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OCR Scan
BCY 12 Ucesat 501-00HS BCY 58 Q60203-

BCY59

Abstract: BCY 85 MICRO BCY58 BCY 59 GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications. MECHANICAL OUTLINE TO-18 CBE ABSOLUTE MAXIMUM RATINGS o =25 C, Tâ'žÂ«45°C, Continuous Power Dissipation Continuous , d.c. current groupings : 8cy58/59 -7 bcy58/59 -8 bcy58/59 -9 bcy58/59-10 GROUP TEST CONDITIONS -â'"
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OCR Scan
T018 Q60203-Y65-E7 Q60203-Y65-E9

TRANSISTOR A104

Abstract: BCY59C BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications , Maximum Ratings Symbol Value Unit Collector Emitter Voltage BCY58 Vces 32 V BCY59 Vces 45 V Collector Emitter Voltage BCY58 Vceo 32 V BCY59 Vceo 45 V Emitter Base Voltage Vebo 7 V Collector , 58 BCY58, BCY59 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit h-Parameters at VCE , V Collector Cutoff Current at VCE = 32 V BCY58 Ices - 0.2 10 nA at VCE = 45 V BCY59 Ices -
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OCR Scan
TRANSISTOR A104 BCY59D A104 transistor CEB15 A104 VCB-10V BWW200HZ R2-700

bcy580

Abstract: BCY590 ) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors BCY58, VII, VIII , SEMICONDUCTOR BCY58, BCY59 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process , noted) BCY58 SYMBOL BCY59 UNIT CES ^CEO tfEB0 'C B Collector-Emitter Voltage Collector-Emitter , =5-0V BVCE0 lc=2.0mA(BCY58 Series) BVceo lc=2.0mA(BCY59 Series) BVEB0 IE=1-OyA VCE(SAT) 'c=^0mA, lB=0.25mA VCE , ) BCY58 SERIES MIN BCY59 SERIES MAX UNIT 10 nA 10 UA 10 nA 32 V 45 V 7.0 V 0.05
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OCR Scan
bcy580 BCY590 transistor h21e SCHEMA
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