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Part : BCY58 Supplier : Philips Semiconductors Manufacturer : Bristol Electronics Stock : 70 Best Price : $1.8750 Price Each : $3.00
Part : BCY5801 Supplier : Philips Semiconductors Manufacturer : ComSIT Stock : 4,900 Best Price : - Price Each : -
Part : BCY588 Supplier : tfk Manufacturer : ComSIT Stock : 990 Best Price : - Price Each : -
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BCY58/59

Catalog Datasheet MFG & Type PDF Document Tags

BCY58

Abstract: TYP50 =100MHz VCB=10V, f=1MHz VBE=0.5V, f=1MHz BCY58/59 UNITS VALUE ALL f=1kHz IC=2mA, VCE=5V BCY58 , ton ts tf toff BCY58/59 UNITS VALUE IC=0.2mA, VCE=5V Rs=2 kohms, f=1kHz , COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input , BCY58 VCEO 32 Collector -Emitter Voltage 32 Collector -Emitter Voltage(RBE=10 ohms) VCES VEBO , C/W BCY58 >32 >7.0 45 >7.0
Continental Device India
Original
TYP50 X10-4 bcy58-8 cdil bcy58-8 BCY581 BCY58-9 BCY78/79 BCY58-7/59-7 BCY58-8/59-8 BCY58-9/59-9 BCY58-10/59-10 C-120

TRANSISTOR A104

Abstract: BCY59C MICRO BCY58 BCY 59 GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar , d.c. current groupings : 8cy58/59 -7 bcy58/59 -8 bcy58/59 -9 bcy58/59-10 GROUP TEST CONDITIONS -â'" , , CES GEO EBO ELECTRICAL CHARACTERISTICS @ BCY 58 BCY 59 39QaW 390mW 1W 1W 200*C 200®C -65®C , otherwise statedQ parameter symbol bcy 58 min typ max BCI 59 min typ max unit test conditions , , Microtron Building, Kwun Tong, Kowloon, Hong Kong. X.I. OÃO A104 R - continue 1 BCY 58 BCY 59
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TRANSISTOR A104 BCY59C BCY 85 BCY59D A104 transistor CEB15 100MH VCB-10V BWW200HZ R2-700

BCY58

Abstract: Transistor BCY58 =100MHz VCB=10V, f=1MHz VBE=0.5V, f=1MHz BCY58/59 UNITS VALUE ALL f=1kHz IC=2mA, VCE=5V BCY58 , ton ts tf toff BCY58/59 UNITS VALUE IC=0.2mA, VCE=5V Rs=2 kohms, f=1kHz , EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 VCEO 32 Collector -Emitter , 45 45 7.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 150 450 deg C/W deg C/W BCY58 >32
Continental Device India
Original
Transistor BCY58 BCY58-10

1w200

Abstract: MAX BCY58/59 -8 BCY 58B BCY 59B MIN MAX BCY58/59 -9 BCY 58C BCY 59C MIN MAX 40 8CY58/59-10 , GENERAL DESCRIPTION : The BCY58 and BCY59 are NPN silicon planar epitaxial transistor. It features , 260 C 200mA 5CtaA 32V 32V 7V @ TA«25eC MIN 32 (unless otherwise statedQ BCY 58 BCI 59 TYP MAX MIN TYP MAX 45 PARAMETER SYMBOL "ces BCY 58 BCY 59 TO-18 MECHANICAL OUTLINE CBE ABSOLUTE MAXIMUM , Collector-Emitter Voltage, CEO Emitter-Base Voltage, V EBO BCY 59 390mW 1W 200°C -65 C t@t200®C 260 C 20CìbA 50mA
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1w200 VCE-45V TA-150 8CY58/59 BCY58/59 IG-10C

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW LOW -POW ER leaded TO -18/ TO-71* BC107/108 BCY58/59 2N2483/2484 TO-92 BC546/547 BCX58 JC500/501 JC546-48 M PS3704-3706 MPS3904 M PS6513-6515 MPS6520/6521 2PC945 2PC1815 S C 59/S C 70f SOT23/ SO T143+ P U M X I tt P U M Z I ft 2PB 1219f 2P B 12 1 9 A t 2PD601/A 2P C 4 0 8 1 t BC846/847 BCV61/63/65+1) BCV71/72 BCW 31-33 BCW 60
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2PA1015 BD136 TRANSISTOR BC 137 TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 JC546 JC sc70 BCW81 BCX70 PMBS3904 PMBT6428/6429 BC337/338 MPS6531/6532

BC107 equivalent transistors

Abstract: 2n5401 equivalent BCY58/59 - package discontinued BCY70/71 - package discontinued BCY78/79 -
Philips Semiconductors
Original
BC107 equivalent transistors 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222/A

BCY78

Abstract: BCY77 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector -Emitter Voltage VCES 60 32 45 Collector -Emitter Voltage VEBO 5.0 5.0 5.0 Emitter -Base Voltage IC 100 200 200
Continental Device India
Original
TYP140 TYP180
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector -Emitter Voltage VCES 60 32 45 Collector -Emitter Voltage VEBO 5.0 5.0 5.0 Emitter -Base Voltage IC 100 200 200 Collector Current Continuous IB 50 50 50 Base Current Continuous PD 600 Continental Device India
Original

BCY59

Abstract: BCY58 - 10 nA 59 BCY58, BCY59 Characteristics, continuation Symbol Min. Typ. Max. Unit Collector , BCY58, BCY59 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications , Maximum Ratings Symbol Value Unit Collector Emitter Voltage BCY58 Vces 32 V BCY59 Vces 45 V Collector Emitter Voltage BCY58 Vceo 32 V BCY59 Vceo 45 V Emitter Base Voltage Vebo 7 V Collector , 58 BCY58, BCY59 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit h-Parameters at VCE
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bcy59v bcy58v

65e7

Abstract: BCY65 circuit) BCY58, BCY 59, BCY65 E f (UA 3.0 |UA 9 t il , (7amb) for max. permissible reverse voltage BCY58, BCY59, BCY65 E 150 °C 239 BCY 58, BCY 59, BCY 65 , BCY 58, BCY 59, BCY 65 E (~2 N 2483) NPN Transistors for AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case , BCY 58 VIII BCY 58 IX BCY 58X BCY 59 VII BCY 59 VIII BCY 59 IX BCY 59 X BCY 65 EVII BCY 65 E VIII BCY
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Q60203-Y58-G Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K Q60203-Y65-E8 65e7 59VIII BCY 59 BCY58-VIII Q60203-Y

BCY59

Abstract: BCY58 BCY58 SILICON PLANAR NPN BCY 59 LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon , Dimensions in mm Collector connected to case (sim. to TO-18) 55 7/76 BCY58 BCY 59 THERMAL DATA 'th , * Pulsed: pulse duration = 300 /zs; duty cycle = 1% BCY58 BCY 59 DC current gain Collector-emitter , and !BCY 79. ABSOLUTE MAXIMUM RATINGS BCY 58 BCY 59 VCES Collector-emitter voltage (VBE = 0) 32 V 45 , conditions Min. Typ. Max. Unit lCES Collector cutoff current (VBE = 0) for BCY58 VCE = 32 V Vce=32V Tamb =
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BcY591

BCY59

Abstract: BCY58 BCY58 BCY 59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon , and BCY 79. ABSOLUTE MAXIMUM RATINGS BCY 58 BCY 59 VCES Collector-emitter voltage (VBE = 0) 32 V 45 , . Unit Ices Collector cutoff current (VBE = 0) for BCY58 VCF = 32V VCE=32V Tamb = 150°C for BCY59 VCF , -0.2V) for BCY58 Vce=32V Tamb = 100°C for BCY59 Vce=45V Tamb = 100°C 20 20 MA MA 'ebo Emitter cutoff current
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BCY59C

Abstract: bcy59 applications. Q U IC K R E F E R E N C E D A T A BCY58 BC Y 59 C o lle c to r-e m itte r voltage (open base) C , BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 m etal package , 1994 325 BCY58 BCY59 R A T IN G S L im itin g values in accordance w ith the A bsolute M axim , max 32 32 7 200 50 1000 - 65 to + 150 200 BC Y 59 45 45 7 V V V mA mA mW °C °C 326 September 1994 S ilicon planar ep itaxia l transistors BCY58 BCY59 C H A R A C T E R IS T IC S Tj = 25
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ty 90-BC BCY58X

BCY59

Abstract: BCY 85 BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 , IX Q60203-Y58-J BCY 58 X Q60203-Y58-K BCY 59 Q60203-Y59 BCY 59 VII Q60203-Y59-G BCY 59 VIII Q60203-Y59-H BCY 59 IX Q60203-Y59-J BCY 59 X Q60203-Y59-K BCY 65 E Q60203-Y65-S2 BCY 65 E VII Q60203-Y65-E7 , in mm Maximum ratings BCY 58 BCY 59 BCY 65 E Collector-emitter voltage Vces 32 45 60 V , AKTIEN6ESELLSCHAF_ BCY58 BCY59 BCY 65 E Static characteristics (Tamb = 25°C) Type BCY 65 E BCY 65 E BCY 65
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Q60203-Y58 Q60203-Y58-H T018 Q60203-Y65-E9 200-C

BCY 68

Abstract: BCY58 2SC D â  Ã¶23Sb05 GGQMBOb NPN Silicon Planar Transistors I SIEG 25C 04306 D BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 cases (18 A 3 DIN , 58 X Q60203-Y58-K BCY 59 Q60203-Y59 BCY 59 VII Q60203-Y59-G BCY 59 VIII Q60203-Y59-H BCY 59 IX Q60203-Y59-J BCY 59 X Q60203-Y59-K BCY 65 E Q60203-Y65-S2 BCY 65 E VII Q60203-Y65-E7 BCY 65 E VIII , 58 BCY 59 BCY 65 E Collector-emitter voltage Vces 32 45 60 V Collector-emitter voltage VcEO 32 45 60
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0431I BCY 68 BCY68 BCY69 QQQ430

BCY59

Abstract: BCY58 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors Product , Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 FEATURES , . UNIT open emitter - - 32 V - - 45 V BCY58 - - 32 V BCY59 , - 1 W 120 170 220 BCY58 BCY59 VCEO collector-emitter voltage IC , mA; VCE = 5 V BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII 180 250 310 BCY58/IX; BCY59
Philips Semiconductors
Original
BCY59X BCY792 BCY59-VIII VII-80 transistor bcy58 IX bcy59 transistor MAM264 BCY58/VII BCY58/VIII BCY58/IX BCY59/IX BCY58/X

BCY59IX

Abstract: bcy59 vebo T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X BCY 58 32 32 7 0.2 0.6 2.28 1 6.67 Tj. T gtg - 6 5 to + 2 0 0 BCY 59 45 45 U nit Vdc Vdc Vdc Am p Watt mW/°C Watt mW/°C °C 2 «'1 3 C o , °C, V b e = 0.2 V) 3 2 V .T a = 150°) 4 5 V .T a = 150°) BCY58 BCY59 all V (B R )C EO V (B R )E B O 7 nAdc BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 all »CES IC EX IC E S , ?5S4 DGÛbMb? 1 | ^ . BCY58, -VII, -Vili, -IX, -X, BCY59, -VII, -Vili, -IX, -X E LE C T R IC A L C H A R A
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BCY59IX bcy59 motorola bcy58-vii bcy58-ix BCY58/BCY59

BCY59

Abstract: Transistor BCY58 current (max. 100 mA) · Low voltage (max. 45 V). BCY58; BCY59 PINNING PIN 1 2 3 emitter base , voltage BCY58 BCY59 collector-emitter voltage BCY58 BCY59 collector current (DC) total power dissipation DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X , NPN switching transistors BCY58; BCY59 LIMITING VALUES In accordance with the Absolute Maximum , collector-base voltage BCY58 BCY59 collector-emitter voltage BCY58 BCY59 emitter-base voltage collector current
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Bcy59 III transistor bcy59 BCV78 BCY59/VH

BCY59

Abstract: BCY58 NPN BCY58 ­ BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors , Storage Temperature range Value BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 Unit 45 32 45 32 7 7 V V V 200 , Value BCY59 BCY58 BCY59 BCY58 Unit 450 °C/W 150 °C/W 1/4 NPN BCY58 ­ BCY59 , BCY58VII Typ.20 >120 80 >40 >125
Comset Semiconductors
Original
BCY58IX BCY58VIII BCY59VII BCY59VIII bcy59 equivalent BCY58/2T6551

BCY59

Abstract: bcv59 N AUER PHILIPS/DISCRETE LIE D â  bbS3T31 â¡â¡27bE3 EMS BCY58 BCY59 IAPX SILICON PLANAR , , for use in amplifier and switching applications. QUICK REFERENCE DATA BCY58 BCY59 , Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BCY58 BCY59 bTE D 0027b24 Ifll HAPX , From junction to ambient in free air From junction to case Rth j-a Rth j-c BCY58 BCY59 , BCY58 BCY59 IAPX J CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut-off
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bcv59 71519 BCY59-10 S3T31 BCY58-BCY59-
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