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Part : P80C52BCY12 Supplier : - Manufacturer : Chip One Exchange Stock : 1,575 Best Price : - Price Each : -
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BCY 12 Datasheet

Part Manufacturer Description PDF Type
BCY12 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BCY12 N/A Shortform Transistor Datasheet Guide Scan
BCY12 N/A Vintage Transistor Datasheets Scan
BCY12 N/A Diode, Transistor, Thyristor Datasheets and more Scan

BCY 12

Catalog Datasheet MFG & Type PDF Document Tags

KT 819 transistor

Abstract: 2N2222A 338 11 BCY 12 Sp Sp Sp Sp Sp Sn Sn Sp Sn Sn Sp Sn Sn Sn Sn Sp Sp Sn Sn Sn Sn Sp Sp Sp Sp Sn Sp Sn Sp , 1.2 0,06 0,3 0,06 0,005 1,1 1 5,6 1,2,5, 6, 1,2 GC 11 8d AC 188K MP26B, KFY18 KT3107B KT3107Sh, F , 15 15 15 18 32 32 12 20 12 16 16 32 32 18 24 24 18 18 10 10 10 15 18 18 15 15 30 30 20 15 50 30 45 32 30 32 55 50 16 20 20 15 B fT (MHz) 4 1.2 1.5 0,7 1.5 2 2.5 1.5 1.5 1 1 1 ,5 1 ,5 1 ,5 1 ,5 1
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH

AC125K

Abstract: 6AN7 5 5 5 5 6 6 7 7 7 8 8 9 9 9 10 10 10 10 11 11 11 11 12 12 12 12 13 13 13 13 13 13 13 13 3 3 3 3 TYPE , mA S =1.2 mA/V H = 70 n = 58 kQ Capacitances Triode Ci =2.7 pF Co =1.7 pF C,g, =1.5 pF Diode Cu =0.8 pF Cd2 =0.7 pF Outline: 12 * 7 T JA L TWIN DIODE-PENTODE WITH VARIABLE TRANSCONDUC TANCE for , » = 1 Mil Typical Operations U. =175 V I, = 12 mA -Ug= 1.5V S = 14 mA/V H =68 Rcq =230 Ü Capacitances , mA _ U ,= 50 V ft, = ÏY iY x Typical Operation per Section U. = 250 V I. 1.2 mA -U,^= 2 V S = * 1.6
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A741PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram 72741N 72747N 72748N 7B131N 76149N 1709C

BCY792

Abstract: bcy 79 ( , max-permissible reverse voltage nA BCY 78, BCY 79 'BE 50 100 150°C â'¢ ^Tamb 376 1753 F-12 ; 2SC D â  fl23SbOS , AKTIENÛESELLSCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases (18 A 3 DIN , for low noise AF input and driver stages. They can be used as complementary types to BCY 58, BCY 59, and BCY 65 E. BCY 77 BCY 78 -BCY 79 Type Ordering code BCY 77 Q62702-C327 BCY 77 VII Q62702-C327-V1
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Q62702-C327-V2 Q62702-C327-V3 Q60203-Y79-G BCY792 bcy 79 BCY78 BCY 78 BCY77 bcy77ix QQ0432S Q60203-Y78 Q60203-Y78-G Q60203-Y78-H

BCY77

Abstract: BCY79 0.4 (0.2 to 0.8) 0.85 (0.7 to 1.2) V ') applies only to BCY 78, BCY 79 2) applies only to BCY 77 â , BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 (TO-18). The collector , driver stages as well as in complementary stages with BCY 58; BCY 59; BCY 65 E. Type Order number BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C 327-V2 BCY 77 IX Q62702-C 327-V3 BCY 78 VII
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BCY 791x zr 4.7v 1Zv transistor Transistor 78 L 05 Q60203-Y78-J BCY78X Q60203-Y78-K Q60203-Y79-H Q60203-Y79-J

65e7

Abstract: BCY65 ) 0.3 (0.15 to 0.7) 0.9 (0.75 to 1.2) V Uc = 50mA; /B = 1.25 mA)1) 0.1 (>0.7) 0.9 (>1.2) V BCY 58 , BCY 58, BCY 59, BCY 65 E (~2 N 2483) NPN Transistors for AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case , particularly suited to AF prestages driver stages and switching applications. Type Order number BCY 58 VII BCY 58 VIII BCY 58 IX BCY 58X BCY 59 VII BCY 59 VIII BCY 59 IX BCY 59 X BCY 65 EVII BCY 65 E VIII BCY
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Q60203-Y58-G Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K Q60203-Y65-E8 65e7 BCY65 bcy58 59VIII BCY 59 BCY59 Q60203-Y

Q62702-C327

Abstract: bcy77 ) V 0.4 ( , 5SC D â  Ã»53SbOS G00432S 7 «SIEG r . y"¿Cj.^S PNP Silicon Planar Transistors BCY 77 25C 04325 D ;_B£XZ5 -BCY 79 SIENENS AKTIEN6ESELLSCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP , be used as complementary types to BCY 58, BCY 59, and BCY 65 E. Type Ordering code BCY 77 Q62702-C327 BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C327-V2 BCY 77 IX Q62702-C327-V3 BCY 78
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K1754 C327 bcy77 siemens 78-IX Q60203-Y79 Q0Q432 0Q0M331

BCY59

Abstract: BCY 85 0.1 ( , BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 , AKTIENGESELLSCHAF Type Ordering code BCY 58 Q60203-Y58 BCY 58 VII Q60203-Y58-G BCY 58 VIII Q60203-Y58-H BCY 58 IX Q60203-Y58-J BCY 58 X Q60203-Y58-K BCY 59 Q60203-Y59 BCY 59 VII Q60203-Y59-G BCY 59 VIII Q60203-Y59-H BCY 59 IX Q60203-Y59-J BCY 59 X Q60203-Y59-K BCY 65 E Q60203-Y65-S2 BCY 65 E VII Q60203-Y65-E7
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BCY 85 T018 Q60203-Y65-E9 200-C

BCY78X

Abstract: BCY79 0.4 (0.2 to 0.8) 0.85 (0.7 to 1.2) V ') applies only to BCY 78, BCY 79 2) applies only to BCY 77 â , BCY 77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 (TO-18). The collector , driver stages as well as in complementary stages with BCY 58; BCY 59; BCY 65 E. Type Order number BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C 327-V2 BCY 77 IX Q62702-C 327-V3 BCY 78 VII
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BCY77VII BCY77VIII

BCY 107

Abstract: BCY71 -0.9 -1.2 V V 61 BCY 70 BCY 71 BCY 72 ELECTRICAL CHARACTERISTICS (continued) Parameter Test , impedance (for BCY 71 only) -1 mA 1 kHz VCE = -10V 12 Reverse voltage ratio (for BCY 71 only) ; -1 mA 1 , BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F'NP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS BCY 70 BCY 71 BCY 72 VCBO
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BCY 107 BCY71 BCY72 BCY 62 bcy70 BCY 12 G--18S1

bcy580

Abstract: BCY590 '" 10 mA lB =0,25 m A VCEsat BCY 58 0,05 0,12 0,35 V lc = 100 mA lB = 2,5 mA BCY 59 0,15 0,3 0,7 V , NPN SILICON TRANSISTOR TRANSÌSTOR NPN SILICIUM *BCY 58 BCY59 Compi, of BCY 78 and BCY 79 à , amplification 32 V BCY 58 VCEO 45 V BCY 59 'c 200 mA Maximum power dissipation Dissipation de puissance , (Unlessotherwisestated) VALEURS LIMITES ABSOLUES D'UTILISATION amt) ¡Sauf Indications contraires) BCY 58 BCY 58 , SEMCOWUCTEIJRS 45 J BCY 58, BCY 59 STATIC CHARACTERISTICS t , = 25°C (Unless otherwise stated
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bcy580 BCY590 transistor h21e SCHEMA

BCY 68

Abstract: BCY58 ( , 58, BCY 59, BCY 65 E 12 Transition frequency fT-f (fc); Vce = parameter MHZ BCY 58, BCY 59, BCY 65 E , 2SC D â  Ã¶23Sb05 GGQMBOb NPN Silicon Planar Transistors I SIEG 25C 04306 D BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 cases (18 A 3 DIN , Ordering code BCY 58 Q60203-Y58 BCY 58 VII Q60203-Y58-G BCY 58 VIII Q60203-Y58-H BCY 58 IX Q60203-Y58-J BCY
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0431I BCY 68 BCY68 BCY69 QQQ430

BCY 59

Abstract: BCY 12 (< 1.2) V BCY 58 BCY 59 BCY 65 E Kollektor-Emitter-Reststrom (UCES = 32 V) ^CES 0,2 (< 10) â , N PN-Transistoren für NF-Vor- und Treiberstufen BCY 58 sowie Schalteranwendungen BCY 59 -BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse , BCY 58 VII Q60203- -Y58- -G BCY 58 VIII Q60203- -Y58- -H BCY 58 IX Q60203- -Y58- -J BCY 58 X Q60203- -Y58- -K BCY 59 VII Q60203- -Y59- -G BCY 59 VIII Q60203- -Y59- -H BCY 59 IX Q60203- -Y59- -J BCY 59
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BCY59X BCY58X Ucesat 501-00HS BCY58-VIII bcy65e

BCY71

Abstract: BCY 107 = -1 mA for BCY 70 and BCY 71 only -0.6 -0.9 V * lc = -50 mA lB = -5 m A -1.2 V 16 BCY 70 , = 1 kHz 2 12 kn h re Reverse voltaqe ratio lc =: -1mA VCE=-10V (for BCY 71 only) f 1 kHz , SILICON PLANAR PNP BCY 70 BCY 71 BCY 72 GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS BCY 70 BCY 71 BCY 72 VCBO
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100-C bcy72a

TRANSISTOR A104

Abstract: BCY59C MICRO BCY58 BCY 59 GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar , , CES GEO EBO ELECTRICAL CHARACTERISTICS @ BCY 58 BCY 59 39QaW 390mW 1W 1W 200*C 200®C -65®C , otherwise statedQ parameter symbol bcy 58 min typ max BCI 59 min typ max unit test conditions , , Microtron Building, Kwun Tong, Kowloon, Hong Kong. X.I. OÃO A104 R - continue 1 BCY 58 BCY 59 , Saturation Voltage v BE(sat) G. 75 0.9 1.2 0.75 0.9 1.2 V Ic-100mA I -2.5mA D Base-Qnitter Voltage V BE 0.5
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TRANSISTOR A104 BCY59C BCY59D A104 transistor CEB15 A104 100MH VCB-10V BWW200HZ R2-700

1B57

Abstract: BCY78 BCY78 SILICON PLANAR PNP BCY 79 LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , low-noise input stages. The complementary NPN types are respectively the BCY 58 and BCY 59. ABSOLUTE MAXIMUM RATINGS BCY 78 BCY 79 VCES Collector-emitter voltage (VBE = 0) -32 V -45 V VCEO , Test conditions Min. Typ. Max. Unit 'ces Collector cutoff current (VBE =: 0) for BCY 78 VCE =-25V Vce =-32V VCE=-25V Tamb = 150°C for BCY 79 VCE = -35V VCE =-45V Vqe = -35V Tamb = 150°C -2 -20 -100 -10 -2
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1B57 G-1B57 G-1860

Q62702-C327

Abstract: BCY79 PIMP-Transistoren für rauscharme NF-Vor- und BCY 77 Treiberstufen BCY 78 -BCY 79 BCY 77; BCY 78; BCY 79 sind epitaktische PNP-Silizium-Plariar-Transistoren im Gehäuse 18 A3 DIN 41 876 (TO-18). , rauscharme NF-Vor- und Treiberstufen sowie komplementär zu BCY 58; BCY 59; BCY 65 E verwendbar. Typ Bestellnummer BCY 77 VII Q62702- -C327-V1 BCY 77 VIII Q62702- -C327-V2 BCY 77 IX Q62702- -C327-V3 BCY 78 VII Q60203- -Y78-G BCY 78 VIII Q60203- -Y78-H BCY 78 IX Q60203- -Y78-J BCY 78 X Q60203- -Y78-K BCY
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79IX 34RR 78-VIII

AS5V

Abstract: BCY 85 PNP-Transistoren für rauscharme NF-Vorstufen BCY 67 BCY 67 ist ein epitaktischer , Transistor ist besondersfür rauscharme NF-Vorstufen verwendbar (Komplementärtransistoren dazu BCY 66). Typ BCY 67 Bestellnummer Q62702-C254 00,1(5 -13,5±1- -5,2. "f vr Gewicht etwa 0,3 g E B G 2,5Uo , mA) Basis-Emitter-Sättigungsspannung (/c = 10 mA; IB = 0,25 mA) "^CEsat "^BEsat 0,12 (0,06 bis 0 , BCY 67 Statische Kenndaten (Tu = 25 °C) Kollektor-Emitter-Reststrom (-t/CES = 35 v) 7c ES 2 (< 20
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AS5V PNP-Transistoren 10ZKH

transistor buv 90

Abstract: BCY 85 N PN-Transistor für rauscharme IMF-Vorstufen BCY 66 BCY 66 ist ein epitaktischer , Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu BCY 67). Typ Bestellnummer BCY 66 Q60203-Y66 0OA5 â'"â 13,5 ±1- "â'¢5,2-02*" Gewicht etwa 0,3 g E B C 2>±o,3 MaÃe , Basis-Emitter-Sättigungsspannung (Ic = 10mA; IB = 0,25 mA) ^CEsat i^BEsat 0,12 (0,05 bis 0,35) 0,7 (0,6 bis 0,85) V V Die obere Grenze gilt für mindestens 90% aller Transistoren â'¢) AOL = 0,65% 237 BCY 66 Statische
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transistor buv 90 BCY 66

BFX90

Abstract: BFR18 o. >- £ ÃJ IL JC > (0 LÃJ U > i) < a NF (dB) M zn S I- LI. a. n o o (SU) uoJ (su) PACKAGE BCY 58 NPN 32 0.1-200 80/520 0.12 10 2 200 3.5 85 480 T0-18 BCY 59 NPN 45 0.1-200 80/360 0.12 10 2 200 3.5 85 480 T0-18 BCY 70 PNP 40 0.01-100 50/150 0.14 10 6 400 2 48 320 T0-18 BCY 71 PNP 45 0.01-100 100/200 0.14 10 2 350 2 â'" T0-18 BCY 72 PNP 25 0.01-100 50/150 0.14 10 6 350 2 48 320 T0-18 BCY 77 PNP 60 0.01-200 80/260 0.12 10 2 180 4.5 85 480 T0-18 BCY 78 PNP 32 0.01-200 80/520 0.12 10 2 180 4.5 85
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BFR16 BFR18 BFW43 BFW44 BFX38 BFX39 BFX90 T0-39

1w200

Abstract: core driver and general purpose industrial applications. MICRO BCY 58 390aW 1W 200*C -65 C tof20G*C 260 C 200mA 5CtaA 32V 32V 7V @ TA«25eC MIN 32 (unless otherwise statedQ BCY 58 BCI 59 TYP MAX MIN TYP MAX 45 PARAMETER SYMBOL "ces BCY 58 BCY 59 TO-18 MECHANICAL OUTLINE CBE ABSOLUTE MAXIMUM , Collector-Emitter Voltage, CEO Emitter-Base Voltage, V EBO BCY 59 390mW 1W 200°C -65 C t@t200®C 260 C 20CìbA 50mA , UNIT uA TEST CONDITIONS VC E ^ V TA-150*C / PARAMETER SYMBOL ICES BCY 58 BCY 59 MIN TYP MAX
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1w200 VCE-45V 8CY58/59 BCY58/59 8CY58/59-10 IG-10C
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