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BCX55TA Diodes Incorporated Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3 visit Digikey
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BCX5516H6327XTSA1 Infineon Technologies AG Transistor visit Digikey
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BCX5516H6433XTMA1 Infineon Technologies AG TRANSISTOR AF SOT89-4 visit Digikey

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BCX55 Datasheet

Part Manufacturer Description PDF Type
BCX55 Central Semiconductor SURFACE MOUNT NPN SILICON TRANSISTOR Original
BCX55 Diodes NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Original
BCX55 Infineon Technologies SOT89 VCEO=60 V hFE=40...250 Original
BCX55 Infineon Technologies Single AF Transistors for General Purpose Applications Original
BCX55 Infineon Technologies Ic = 500 mA; Package: PG-SOT89-4; Polarity: NPN; V<sub>CEO</sub> (max): 60.0 V; P<sub>tot</sub> (max): 2,000.0 mW; h<sub>FE</sub> (min): 40.0 - 250.0; I<sub>C</sub>: 1,000.0 mA; Original
BCX55 Kexin NPN Medium Power Transistors Original
BCX55 NXP Semiconductors 60 V, 1 A NPN medium power transistors Original
BCX55 Philips Semiconductors NPN Medium Power Transistor Original
BCX55 Philips Semiconductors NPN medium power transistors Original
BCX55 Siemens Cross Reference Guide 1998 Original
BCX55 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BCX55 Siemens NPN Silicon AF Transistors (For AF driver and output stages High collector current) Original
BCX55 TY Semiconductor NPN Medium Power Transistors - SOT-89 Original
BCX55 Zetex Semiconductors SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original
BCX55 Zetex Semiconductors SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original
BCX55 Motorola European Master Selection Guide 1986 Scan
BCX55 Mullard Quick Reference Guide 1977/78 Scan
BCX55 N/A Basic Transistor and Cross Reference Specification Scan
BCX55 N/A Shortform Transistor PDF Datasheet Scan
BCX55 N/A Diode, Transistor, Thyristor Datasheets and more Scan
Showing first 20 results.

BCX55

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 BM , =2.0V, IC=5.0mA 40 hFE hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 25 fT , Central BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE MAXIMUM , SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar Central Semiconductor
Original
BD NPN transistors transistor bc icbo nA npn bc transistor icbo nA marking r4 diode MARKING BM SOT89 SOT-89 marking bc 100MH
Abstract: Audio Amplifiers MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:B , (2) BCX54 BCX54-10 BCX54-16 RANK BCX55 BCX55-10 BCX55-16 BCX56 BCX56 , SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES PNP Complements to BCX51 , Value BCX54 VEBO Collector-Emitter Voltage BCX55 60 100 BCX54 45 BCX55 60 , Emitter-base breakdown voltage V(BR)CEO* IC=10mA,IB=0 V(BR)EBO 45 BCX55 60 80 V V Jiangsu Changjiang Electronics Technology
Original
BCX52 BCX53
Abstract: V q E= 2.0V, lc =150mA (BCX54-10, BCX55-10, BCX56-10) V c e = 2.0V, lc =150mA (BCX54-16, BCX55-16 , BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BA BC BD BE BG BM , BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR CentralTM semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured , CBO Vq e o v EBO BCX54 45 45 BCX55 60 60 5.0 1.0 1.5 100 200 1.2 -65 to +150 104 BCX56 100 80 UNITS V -
OCR Scan
BD 440 NPN transistors BA SOT-89 transistor bd 370 sot89 marking BH on TRANSISTOR BC 187 MARKING BL SOT89 CP305
Abstract: -10, BCX55-10, BCX56-10) VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) VCE=2.0V, IC=500mA VCE , ) BASE DEVICE MARKING CODE BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 BM BCX56 BH BCX56-10 BK BCX56-16 BL R5 (20-November 2009) w w , BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors Central Semiconductor
Original
sot-89 MARKING CODE BM Marking BA SOT89 BM marking code BH Ra
Abstract: =2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) VCE , BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BA BC BD BE BG BM , BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured , BCX54 45 45 BCX55 60 60 5.0 1.0 1.5 100 200 1.2 -65 to +150 104 BCX56 100 80 UNITS V V V A A mA mA W °C Central Semiconductor
Original
marking code ba NPN marking BH
Abstract: -16,BCX55-16,BCX56-16 63 40 IC = 150 mA; VCE = 2 V 63 160 IC = 150 mA; VCE = 2 V hFE 63 IC = 500 mA; VCE = 2 V DC current gain BCX54-10,BCX55-10,BCX56-10 IC = 5 mA; VCE = 2 V IC , TYPE BCX54 BCX54-10 BCX54-16 Marking BA BC BD TYPE BCX55 BCX55-10 BCX55-16 Marking BE BG BM TYPE BCX56 BCX56-10 BCX56-16 Marking BH BK , Transistors SMD Type Product specification BCX54,BCX55,BCX56 Features High current TY Semiconductor
Original
Abstract: TYPE NUMBER BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 MARKING CODE BA BC BD BE BG TYPE NUMBER BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BM BH BK BL Fig.1 Simplified outline (SOT89) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BCX54 BCX55 BCX56 coliector-emitter voltage BCX54 BCX55 BCX56 peak collector current total power dissipation DC current gain , current (max. I A) Low voltage (max. 80 V). BCX54; BCX55; BCX56 PINNING PIN 1 2 3 emitter collector -
OCR Scan
Marking BH SOT89 MBH729
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# BCX55 BCX55-10 BCX55-16 NPN Plastic-Encapsulate Transistors Features · · · · Power Dissipation: PCM=0.5W (Tamb=25) Collector Current: ICM=1.0A Collector-Base Voltage: V(BR)CBO=60V Marking : BCX55=BE, BCX55-10=BG, BCX55-16=BM · Maximum Ratings Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC TJ TSTG , (VEB=5.0V, IC=0) DC Current Gain (VCE=2.0V, IC=150mA) BCX55 BCX55-10 BCX55-16 DC Current Gain (VCE Micro Commercial Components
Original
Abstract: -10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 = BA = BC = BD = BE = BG = BM = BH = BK = BL September 1994 301 BCX54 BCX55 BCX56 RATINGS Lim iting values in accordance with the Absolute Maximum System (IEC 134) BCX54 BCX55 BCX56 max. 45 Collector-base voltage (open emitter) 60 100 V v CBO , BCX54 BCX55 BCX56 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a , E R max. IC M max. ^ to t max. Tj max. _C LL BCX55 60 60 60 1,5 1 150 40 to 250 BCX56 100 V -
OCR Scan
Abstract: PARTMARKING m 0 DETAILS: - C - BA BCX54-10 - BC BCX54- 16 - BD BCX55 - BE BCX55-10 - BG BCX55- 16 - BM BCX56 - BH BCX56-10 - BK BCX5616 - BL BCX54 COMPLEMENTARY BCX54 - BCX51 E \@ TYPES:BCX55 - BCX56 , -­-­-­- ~ollector-B - . - - 4-­ I -4 BCX54 ­- I BCX55 I BCX56 , : Collector-Base Voltage Breakdown BCX54 BCX55 BCX56 V(BI,)CBO BCX54 BCX55 BCX56 Zetex Semiconductors
Original
SOT89 bc DSA003675
Abstract: BCX55-16 BCX56-16 ® SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code s s s X55 BCX56-16 s Marking BCX55-16 X56 SILICON EPITAXIAL PLANAR PNP MEDIUM , -89 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCX55-16 , Max. Operating Junction Temperature 1.3 -65 to 150 150 W C o o C 1/4 BCX55-16 , Breakdown Voltage (I E = 0) I C = 100 uA for BCX55-16 for BCX56-16 60 100 V V V (BR)CEO STMicroelectronics
Original
BCX52-16 BCX53-16 P025H bcx55-16 marking
Abstract: ) COLLECTOR 3) BASE MARKING CODE: BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 , =5.0mA 63 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 40 fT VCE=5.0V, IC , Central BCX54 BCX55 BCX56 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Central Semiconductor
Original
bc 104 npn transistor sot-89 MARKING CODE Ba
Abstract: -10, BCX55-10, BCX56-10) VCE=2.0V, lc =150mA (BCX54-16, BCX55-16, BCX56-16) VCE=2.0V, lC=500mA VCE=5.0V, lC , -10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BA BC BD BE BG BM BH BK BL , BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors , PAGE SOT-89 CASE MAXIMUM RATINGS (TA=25"C> v CBO ^CEO v EBO c ·c m >B >BM BCX54 45 45 BCX55 -
OCR Scan
TRANSISTOR BC 187 bc 187 npn transistor BC 187 TRANSISTOR marking bd sot-89
Abstract: : BCX54 BA BCX54-10 BC BCX54-16 BD BCX55 BE BCX55-10 BG BCX55-16 BM BCX56 BH BCX56-10 BK BCX56-16 BL R0 , hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 40 fT VCE=5.0V, IC=10mA, f=100MHz 130 MAX , BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured Central Semiconductor
Original
Abstract: CLASSIFICATION OF hFE(2) BCX54 Range BCX54-16; BCX55 BCX55-10; BCX55-16; BCX56 Rank , audio amplifiers. 1 2 3 SOT-89 MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD BCX55:BE BCX55-10 , BCX54/BCX55/BCX56 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 2. COLLECTOR , VCEO BCX54 BCX55 VCBO Units 100 V 45 BCX54 BCX55 BCX56 V 60 80 VEBO , Test conditions MIN BCX54 60 BC56 45 BCX55 60 BCX56 UNIT 100 BCX54 Weitron
Original
BCX54/BCX55/BCX56
Abstract: Audio Amplifiers MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56 , BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 RANK BCX54-10 BCX56-10 BCX56 , SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES PNP Complements to BCX51 , Value BCX54 Collector-Emitter Voltage 45 60 100 BCX54 45 BCX55 60 BCX56 VCEO Collector-Base Voltage BCX55 BCX56 VCBO Unit 80 V V Emitter-Base Voltage Jiangsu Changjiang Electronics Technology
Original
Abstract: BCX55 BCX55-10 BCX55-16 Marking BE BG BM TYPE BCX56 BCX56-10 BCX56 , ìA VEB = 5 V, IC = 0 100 nA BCX54-16,BCX55-16,BCX56-16 Collector-emitter saturation , V hFE 63 IC = 500 mA; VCE = 2 V DC current gain BCX54-10,BCX55-10,BCX56-10 IC = 5 mA , Transistors SMD Type NPN Medium Power Transistors BCX54,BCX55,BCX56 Features High current , Rating Unit VCBO V 60 V BCX56 Collector-emitter voltage 45 BCX55 Kexin
Original
smd marking BH KEXIN BH SMD bcx56 smd smd marking BA smd bh npn BH 16 smd
Abstract: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 7 ISSUE 3 ­ FEBRUARY 1996 PARTMARKING DETAILS:BCX54 ­ BA BCX54-10 ­ BC BCX55 ­ BE BCX55-10 ­ BG BCX56 ­ BH BCX56-10 ­ BK C BCX54-16 ­ BD BCX55-16 ­ BM BCX56-16 ­ BL E COMPLEMENTARY TYPES:BCX54 ­ BCX51 BCX55 ­ BCX52 C BCX56 ­ BCX53 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX54 BCX55 BCX56 Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 45 60 100 Zetex Semiconductors
Original
BCX53B
Abstract: TRANSISTORS ISSUE 3 ­ FEBRUARY 1996 7 C BCX54-16 ­ BD BCX55-16 ­ BM BCX56-16 ­ BL PARTMARKING DETAILS:BCX54 ­ BA BCX54-10 ­ BC BCX55 ­ BE BCX55-10 ­ BG BCX56 ­ BH BCX56-10 ­ BK COMPLEMENTARY TYPES:BCX54 ­ BCX51 BCX55 ­ BCX52 BCX54 BCX55 BCX56 E C BCX56 ­ BCX53 B ABSOLUTE MAXIMUM RATINGS. PARAMETER , Current Power Dissipation at Tamb=25°C SYMBOL VCBO VCEO VEBO ICM IC Ptot BCX54 45 45 BCX55 60 60 5 2 1 1 , Voltage Collector-Emitter Breakdown Voltage BCX54 BCX55 BCX56 BCX54 BCX55 BCX56 SYMBOL V(BR)CBO MIN. TYP Diodes
Original
BCX56E
Abstract: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# BCX55 BCX55-10 BCX55-16 NPN Plastic-Encapsulate Transistors Features · · · · Power Dissipation: PCM=0.5W (Tamb=25) Collector Current: ICM=1.0A Collector-Base Voltage: V(BR)CBO=60V Marking Code: BCX55=BE, BCX55-10=BG, BCX55-16=BM Maximum Ratings Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC TJ TSTG , =0) Emitter Cutoff Current (VEB=5.0V, IC=0) DC Current Gain (VCE=2.0V, IC=150mA) BCX55 BCX55-10 BCX55-16 DC Micro Commercial Components
Original
Abstract: BCP55; BCX55; BC55PA 60 V, 1 A NPN medium power transistors Rev. 8 â'" 24 October 2011 Product , JEITA JEDEC BCP55 SOT223 SC-73 - BCP52 BCX55 SOT89 SC-62 TO-243 BCX52 , selection -16 [1] Pulse test: tp ï'£ 300 s;  = 0.02. BCP55; BCX55; BC55PA NXP Semiconductors , -73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BCX55 SC-62 plastic , . 2011. All rights reserved. 2 of 22 BCP55; BCX55; BC55PA NXP Semiconductors 60 V, 1 A NPN NXP Semiconductors
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MOSFET TRANSISTOR SMD MARKING CODE bh BC52PA AEC-Q101
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium , Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES , BCX54 BA BCX55-16 BCX54-10 BC BCX56 BD BCX56-10 BE BCX56-16 BL BCX55-10 BG 3 BK BCX55 2 BH BCX54-16 1 BM 1999 Apr 19 Bottom view MAM296 , NPN medium power transistors BCX54; BCX55; BCX56 LIMITING VALUES In accordance with the Philips Semiconductors
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Thermal considerations for SOT89 transistor bc 209 npn BCX56-10-BK TRANSISTOR BC 212 sot89 npn marking code 72 transistor bc 488 SCA63
Abstract: BCP55; BCX55; BC55PA 60 V, 1 A NPN medium power transistors Rev. 8 - 24 October 2011 Product , Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Package NXP BCP55 BCX55 BC55PA [1 , Semiconductors BCP55; BCX55; BC55PA 60 V, 1 A NPN medium power transistors 2. Pinning information Table 3 , information Table 4. Ordering information Package Name BCP55 BCX55 BC55PA [1] Type number[1 , Rev. 8 - 24 October 2011 2 of 22 NXP Semiconductors BCP55; BCX55; BC55PA 60 V, 1 A NPN NXP Semiconductors
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Transistor MARKING CODE AW SOT89 transistor smd marking BJ BC55 NPN transistor BJ 102 131 transistor smd marking BJ pnp
Abstract: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 - 18 February 2005 , BC637 [2] SOT54 SC-43A BC638 BCP55 SOT223 SC-73 BCP52 BCX55 SOT89 SC , ; BCP55; BCX55 Philips Semiconductors 60 V, 1 A NPN medium power transistor 2. Pinning , . 06 - 18 February 2005 2 of 17 BC637; BCP55; BCX55 Philips Semiconductors 60 V, 1 A NPN , heatsink; 4 leads SOT223 BCX55 SC-62 plastic surface mounted package; collector pad for good Philips Semiconductors
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transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium , Semiconductors Product specification NPN medium power transistors BCX54; BCX55; BCX56 FEATURES , BCX54 BA BCX55-16 BCX54-10 BC BCX56 BD BCX56-10 BE BCX56-16 BL BCX55-10 BG 3 BK BCX55 2 BH BCX54-16 1 BM 2001 Oct 10 Bottom view MAM296 , NPN medium power transistors BCX54; BCX55; BCX56 LIMITING VALUES In accordance with the Philips Semiconductors
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date code bcx56 philips transistor BC 55-16 SCA73
Abstract: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 - 25 June 2007 Product , ] SOT54 SC-43A TO-92 BC638 BCP55 SOT223 SC-73 - BCP52 BCX55 SOT89 SC , selection -16 VCE = 2 V; IC = 150 mA 100 - 250 BC637; BCP55; BCX55 NXP Semiconductors , B.V. 2007. All rights reserved. Rev. 07 - 25 June 2007 2 of 15 BC637; BCP55; BCX55 NXP , package with increased heatsink; 4 leads SOT223 BCX55 SC-62 plastic surface-mounted package NXP Semiconductors
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C637 C-63716 C637-16 BC637-16 bc637 nxp bc6356376393
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