BCX51 BCX52 BCX53 BCX54 BCX55 BCX56 BCX52-16 BCX51-10 BCX51-16 BCX53-10

Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES â�¢ High current (max. 1 A)

Philips Semiconductors Product specification PNP medium power transistors BCX51 BCX51 ; BCX52 BCX52; BCX53 BCX53 FEATURES â�¢ High current (max. 1 A) â�¢ Low voltage (max. 80 V). APPLICATIONS â�¢ Medium power general purposes â�¢ Driver stages of audio amplifiers. DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54 BCX54, BCX55 BCX55 and BCX56 BCX56. MARKING PINNING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE BCX51 BCX51 AA BCX52-16 BCX52-16 AM BCX51-10 BCX51-10 AC BCX53 BCX53 AH BCX51-16 BCX51-16 AD BCX53-10 BCX53-10 AK BCX52 BCX52 AE BCX53-16 BCX53-16 AL BCX52-10 BCX52-10 AG PIN DESCRIPTION 1 emitter 2 collector 3 base \ / 1 _2 _13 Bottom view Fig. 1 Simplified outline (SOT89) and symbol. 1999 Apr 19 2 Philips Semiconductors Product specification PNP medium power transistors BCX51 BCX51 ; BCX52 BCX52; BCX53 BCX53 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcBO collector-base voltage open emitter BCX51 BCX51 - -45 V BCX52 BCX52 - -60 V BCX53 BCX53 - -100 V VcEO collector-emitter voltage open base BCX51 BCX51 - -45 V BCX52 BCX52 - -60 V BCX53 BCX53 - -80 V Vebo emitter-base voltage open collector - -5 V lc collector current (DC) - -1 A 'cm peak collector current - -1.5 A Ibm peak base current - -200 mA Ptot total power dissipation Tamb < 25 Â°C; note 1 - 1.3 W Tstg storage temperature -65 +150 Â°C Tj junction temperature - 150 Â°C Tamb operating ambient temperature -65 +150 Â°C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 94 K/W Rth j-s thermal resistance from junction to soldering point note 1 14 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". 1999 Apr 19 3 Philips Semiconductors Product specification PNP medium power transistors CHARACTERISTICS Tamb = 25 Â°C unless otherwise specified. BCX51 BCX51 ; BCX52 BCX52; BCX53 BCX53 SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -30 V - - -100 nA |E = 0; VCB = -30 V; Tj = 125 Â°C - - -10 |iA Iebo emitter cut-off current lc = 0; VEB = -5 V - - -100 nA hFE DC current gain VCE = -2 V; see Fig.2 lc = -5 mA lc = -150 mA lc = -500 mA 40 63 25 - 250 DC current gain BCX51-10 BCX51-10; BCX52-10 BCX52-10; BCX53-10 BCX53-10 BCX51-16 BCX51-16; BCX52-16 BCX52-16; BCX53-16 BCX53-16 lc = -150 mA; VCE = -2 V; see Fig.2 63 100 - 160 250 VcEsat collector-emitter saturation voltage lc = -500 mA; lB = -50 mA - - -500 mV VBE base-emitter voltage lc = -500 mA; VCE = -2 V - - -1 V fT transition frequency lc = -10 mA; VCE = -5 V; f = 100 MHz - 50 - MHz hFE 120 80 40 -10-1 _10 _102 _103 |c(mA) _104 Fig.2 DC current gain; typical values. MBH730 MBH730 -2 / VCE S \ \ 1999 Apr 19 4 Philips Semiconductors Product specification PNP medium power transistors BCX51 BCX51 ; BCX52 BCX52; BCX53 BCX53 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bl b2 b3 c D E e e1 he L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT89 97-02-28 1999 Apr 19 4