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Part : BCW66GLT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.02 Price Each : $0.0250
Part : BCW66GLT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 11,447 Best Price : $0.02 Price Each : $0.1310
Part : BCW66G Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 1,216 Best Price : £0.0562 Price Each : £0.0858
Part : BCW66G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : - Best Price : £0.0590 Price Each : £0.1650
Part : BCW66GLT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 10,770 Best Price : £0.0317 Price Each : £0.15
Part : BCW66GLT1G Supplier : ON SEMICONDUCTOR Manufacturer : New Advantage Stock : 87,800 Best Price : $0.0240 Price Each : $0.0255
Part : BCW66GLT1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 3 Best Price : $0.03 Price Each : $0.04
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BCW66G Datasheet

Part Manufacturer Description PDF Type
BCW66G Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BCW66G Fairchild Semiconductor NPN General Purpose Amplifier Original
BCW66G Infineon Technologies NPN Silicon AF Transistor Original
BCW66G Siemens NPN Silicon AF Transistors (For general AF applications High current gain) Original
BCW66G STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original
BCW66G Zetex Semiconductors SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original
BCW66G Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BCW66G Continental Device India General Purpose Transistor Scan
BCW66G Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
BCW66G Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCW66G Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan
BCW66G General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSISTOR, bipolar, small signal, plastic, NPN, pkg: SOT-23 (surface mount) Scan
BCW66G International Rectifier HEXFET Power MOSFET Scan
BCW66G Motorola Small-signal NPN transistor. Scan
BCW66G N/A Transistor Shortform Datasheet & Cross References Scan
BCW66G N/A Shortform Transistor PDF Datasheet Scan
BCW66G N/A Shortform Transistor PDF Datasheet Scan
BCW66G N/A Diode, Transistor, Thyristor Datasheets and more Scan
BCW66G N/A Shortform Transistor Datasheet Guide Scan
BCW66G Siemens Semiconductor Data Book (German) 1976/77 Scan
Showing first 20 results.

BCW66G

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: detailed qualification data Product BCW66G BCW66G_D87Z back to top © 2007 Fairchild Semiconductor , Year Coding) Line 2: EG BCW66G_D87Z Full Production N/A SOT-23 3 TAPE REEL Line 1 , BCW66G BCW66G NPN General Purpose Amplifier · This device is designed for general purpose , Corporation Rev. A1, August 2002 BCW66G Thermal Characteristics Symbol PD RJA Total Device , Units mW mW/°C °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BCW66G Fairchild Semiconductor
Original
100MH

30255

Abstract: qSOT-23 -freq u en cy d river s ta g e an d switching applications. t =i B Device BCW66F BCW66G BCW66H cr , Vdc, lc = 0, TA = 150°C VE B = 4.0 Vdc, lc = 0 lc = 100 ixAdc, VC E = 1.0 Vdc BCW66F BCW66G BCW66H : BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H Min 45 5.0 75 - - - 35 50 80 75 110
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OCR Scan
30255 qSOT-23
Abstract: Marking: BCW66F:EF; BCW66G:EG; â"ƒ BCW66H:EH ELECTRICAL CHARACTERISTICS (Ta=25â"ƒ unless , voltage VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H VCE=1V, IC= 10mA BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE1 hFE2 DC current gain * VCE=1V, IC Jiangsu Changjiang Electronics Technology
Original
BCW66F/66G/66H BCW68

BCW66F/66G/66H

Abstract: VCE=1V, IC= 10mA BCW66F BCW66G BCW66H VCE=1V, IC= 100mA BCW66F BCW66G BCW66H VCE=2V, IC= 500mA BCW66F BCW66G BCW66H µA 0.02 µA 35 50 80 75 110 180 100 160 250 35 60 , VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H 0.02 2 V fT VCE= 10V, IC=20mA, f , =2Kâ"¦ 10 dB Transition frequency Marking BCW66F:EF ; BCW66G:EG; BCW66H:EH 100 MHz
Jiangsu Changjiang Electronics Technology
Original

BCW66H

Abstract: marking eh sot23 BCW66F EF BCW66G EG BCW66H EH â'¢ Designed for low-frequency driver stage and switching applications , 'ebo VFB = 4.0 Vdc, lc = 0 â'" â'" 20 nAdc hFE lc = 100 ixAdc, VCE = 1.0 Vdc BCW66F BCW66G 35 50 â'" â'" â'" BCW66H 80 â'" â'" lc = 10 mAdc, VCE = 1.0 Vdc : BCW66F BCW66G 75 110 â'" â'" BCW66H 180 â'" â'" lc = 100 mAdc, VCE = 1.0 Vdc BCW66F BCW66G 100 160 â'" 250 400 BCW66H 250 â'" 630 lc = 500 mAdc, VCE = 2.0 Vdc BCW66F BCW66G 35 60 â'" â'" BCW66H 100 â'" â'" VcE(sat) lc =
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OCR Scan
marking eh sot23 SAL1

003A MARKING TRANSISTOR

Abstract: BCW66F Marking BCW66F EF BCW66G EG BCW66H EH â'¢ Designed for low-frequency driver stage and switching , 35 â'" â'" â'" BCW66G 50 â'" â'" BCW66H 80 â'" â'" Ir. = 10 mAdc, VCE = 1.0 Vdc : BCW66F 75 â'" â'" BCW66G 110 â'" â'" BCW66H 180 â'" â'" "c = 100 mAdc, VCE = 1.0 Vdc BCW66F 100 â'" 250 BCW66G 160 â'" 400 BCW66H 250 â'" 630 lo = 500 mAdc, VCE = 2.0 Vdc BCW66F 35 â'" â'" BCW66G 60 â'" â'" BCW66H 100 â'" â'" VcE(sat) lo = 500 mAdc, lB = 50 mAdc â'" 0.7 â
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OCR Scan
003A MARKING TRANSISTOR

bcw66h

Abstract: ­ ­ ­ ­ ­ 250 400 630 ­ ­ ­ BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 50 80 75 100 180 100 160 250 ­ ­ ­ , Stempelung CEBO RthA ­ 60 pF < 420 K/W 1) BCW68F . BCW68H BCW66F = EF BCW66G = EG BCW66H = EH ­ CCBO ­ 6 pF
Diotec
Original
UL94V-0

Fairchild Semiconductor - Process

Abstract: BCW66G BCW66G NPN General Purpose Amplifier · This device is designed for general purpose , Corporation Rev. A, December 2001 BCW66G Thermal Characteristics Symbol PD RJA Total Device , Units mW mW/°C °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, December 2001 BCW66G , Rev. H4 Product Folder - Fairchild P/N BCW66G - NPN General Purpose Amplifier SEARCH , GO space space space >> Find products >> Home find products space space space BCW66G Related Links
Fairchild Semiconductor
Original
Fairchild Semiconductor - Process

BCW66F

Abstract: BCW66G 100 µA 35 50 80 ­ ­ ­ ­ ­ ­ BCW66F BCW66G BCW66H hFE hFE hFE 75 100 180 ­ ­ ­ ­ ­ ­ VCE = 1 V, IC = 100 mA BCW66F BCW66G BCW66H hFE hFE hFE 100 160 , = 10 mA 1 BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE ­ ­ ­ 35 , . BCW68H BCW66F = EF BCW66G = EG BCW66H = EH Tested with pulses tp = 300 µs, duty cycle 2% ­
Diotec
Original

BCW66G

Abstract: BCW66G BCW66G NPN General Purpose Amplifier · This device is designed for general purpose amplifier applications at collector currents to 500mA. · Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise , Semiconductor Corporation Min. Typ. Rev. A1, August 2002 BCW66G Thermal Characteristics BCW66G Package Dimensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN
Fairchild Semiconductor
Original

BCW65AR

Abstract: BCW65BR EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR , EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR , 160 IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 VBE(SAT) BCW65B hFE BCW66G Static , 160 IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 VBE(SAT) BCW65B hFE BCW66G Static
Zetex Semiconductors
Original
BCW65 BCW66 BCW65A BCW66HR BCW67

BCW65A

Abstract: BCW66F BCW68F BCW66G 75 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW68G BCW66H 75 45 1000 350 250/630 100/1 , /250 100/1 0.3 100/10 100 10 BCW66F BCW68G 60 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW66G
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OCR Scan
FMMTA06 FMMTA56 FMMTA05 FMMTA55 100az BCW67A BCW67B
Abstract: BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H DC Current Gain* BCW66F BCW66G BCW66H BCW66F BCW66G , Bauelemente CLASSIFICATION OF hFE(3) Part Number Rank Range Marking BCW66F BCW66G BCW66H F SeCoS
Original

vishay MARKING 09

Abstract: BCW66G BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125 , -May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General Semiconductor Electrical Characteristics , Document Number 88172 09-May-02 BCW66G Vishay Semiconductors formerly General Semiconductor Fig
Vishay Semiconductors
Original
vishay MARKING 09 E8/10K

BCW66G

Abstract: BCW66G BCW66G NPN General Purpose Amplifier 3 · This device is designed for general purpose amplifier applications at collector currents to 500mA. · Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted , Semiconductor Corporation Min. Typ. Rev. A, December 2001 BCW66G Thermal Characteristics BCW66G Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN
Fairchild Semiconductor
Original
Abstract: =1.0V, IC=100mA VCE=2.0V, IC=500mA BCW66F: BCW66G: BCW66H BCW66 75 45 EF EG EH 5.0 800 , 0.3 0.7 1.25 2.0 BCW65B BCW66G MIN MAX 50 110 160 400 60 UNITS nA µA nA V V V , : BCW65A: EA BCW65B: EB BCW65C: EC BCW66F: EF BCW66G: EG BCW66H EH R0 ( 30-November 2001 Central Semiconductor
Original
Abstract: BCW66G Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) Pin Configuration 1. Base 2. Emitter 3. Collector 1 2 max. .004 (0.1) 0.079 (2.0) 0.035 (0.9) 045 (1 15) .007 , °C °C/W °C/W 6/15/00 215 BCW66G Small Signal Transistor (NPN) Electrical Characteristics , 20 20 nA µA nA fT CCB CEB ­ ­ ­ 170 6 60 ­ ­ ­ MHZ pF pF BCW66G Small Signal General Semiconductor
Original

BCW66G

Abstract: BCW68G BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125 , -May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General Semiconductor Electrical Characteristics , Document Number 88172 09-May-02 BCW66G Vishay Semiconductors formerly General Semiconductor Fig
Vishay Semiconductors
Original
vishay TRANSISTOR Sot-23 MARKING CODE

vishay TRANSISTOR Sot-23 MARKING CODE

Abstract: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View Mounting Pad Layout 0.031 (0.8) Pin Configuration 1. Base 2. Emitter 3. Collector 0.035 (0.9) 0.079 , Number 88172 09-May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General , MHZ pF pF www.vishay.com 2 Document Number 88172 09-May-02 BCW66G Vishay Semiconductors
Vishay Semiconductors
Original
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR Nâ'"Pâ'"N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collectorâ'"base , Ptot 60 100 35 V V V mA mW Page 1 of 3 BCW66F, BCW66G BCW66H RATINGS (at T A Continental Device India
Original
C-120

BCW66

Abstract: BCW66G BCW66G NPN General Purpose Amplifier 3 · This device is designed for general purpose amplifier applications at collector currents to 500mA. · Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted , Semiconductor Corporation Min. Typ. Rev. A, December 2001 BCW66G Thermal Characteristics BCW66G Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN
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OCR Scan
Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632

65 b S

Abstract: SOT-23 marking AFE BCW68F BCW66G 75 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW68G BCW66H 75 45 1000 350 250/630 100/1 , /250 100/1 0.3 100/10 100 10 BCW66F BCW68G 60 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW66G
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OCR Scan
65 b S SOT-23 marking AFE

Q62702-C1632

Abstract: C1892 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N­P­N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector­base , 35 V V V mA mW Page 1 of 3 BCW66F, BCW66G BCW66H RATINGS (at TA = 25°C unless
Siemens
Original
C1892
Showing first 20 results.