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BCW60A Datasheet

Part Manufacturer Description PDF Type
BCW60A Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BCW60A Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BCW60A Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BCW60A General Semiconductor General Purpose Bipolar Transistor, NPN, 32V, SOT-23, 3-Pin Original
BCW60A Infineon Technologies NPN Silicon AF Transistor Original
BCW60A Infineon Technologies SOT23 package Original
BCW60A Kexin NPN General Purpose Transistors Original
BCW60A Philips Semiconductors Small-signal Transistors Original
BCW60A Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW60A Siemens NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Original
BCW60A TY Semiconductor NPN General Purpose Transistors - SOT-23 Original
BCW60A Vishay Telefunken Small Signal Transistors (PNP) Original
BCW60A Zetex Semiconductors SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS Original
BCW60A Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BCW60A Continental Device India Silicon Planar Epitaxial Transistor Scan
BCW60A Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
BCW60A Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCW60A Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan
BCW60A ITT Semiconductors NPN Silicon Epitaxial Planar Transistors Scan
BCW60A Motorola PNP silicon general purpose transistor. Scan
Showing first 20 results.

BCW60A

Catalog Datasheet MFG & Type PDF Document Tags

smd marking AA

Abstract: transistor smd marking AD Transistors IC SMD Type NPN General Purpose Transistors BCW60A/B/C/D SOT-23 Unit: mm , 1 Transistors IC SMD Type BCW60A/B/C/D Electrical Characteristics Ta = 25 Parameter , BCW60B 20 VCE=5V, IC=10ìA BCW60C 40 BCW60D 100 BCW60A 120 220 180 310 250 460 BCW60D 380 630 BCW60A 60 BCW60B DC Current Gain BCW60C VCE=5V, IC , =1mA 150 ns VBB=3.6V, IB2=1mA R1=R2=5K , RL=990 800 ns TYPE BCW60A BCW60B BCW60C
Kexin
Original
smd marking AA transistor smd marking AD smd transistor marking 5K BCW60A/B/C/D
Abstract: Transistors IC SMD Type Product specification BCW60A/B/C/D SOT-23 Unit: mm +0.1 , specification BCW60A/B/C/D Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min , =10ìA BCW60C 40 BCW60D 100 BCW60A 120 220 180 310 250 460 BCW60D 380 630 BCW60A 60 BCW60B DC Current Gain BCW60C VCE=5V, IC=2mA hFE BCW60B 70 VCE=1V, IC , =1mA R1=R2=5K , RL=990 800 ns Marking TYPE BCW60A BCW60B BCW60C BCW60D Marking AA TY Semiconductor
Original

BCW60A

Abstract: BCW60B BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC PACKAGE OUTLINE DETAILS BCW60D = AD ALL DIMENSIONS IN mm , 00007SS b31 â  BCW60A BCW60B BCW60C BCW60D RATINGS (at Ta = 25°C unless otherwise specified , 2 kQ typ. 2 dB IC = 200 |j.|iA; VCE = 5 V; f: 1 kHz; B = 200 Hz F < 6 dB BCW60A 60B 60C 60D D.C , BCW60A BCW60B BCW60C BCW60D D Reverse voltage transfer ratio Vce = 5 V; IC = 2 mA; f: 1 kHz hre
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23833RM

sot 23 mark AD

Abstract: BCW60B BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A/B/C/D Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40
Fairchild Semiconductor
Original
sot 23 mark AD
Abstract: BCW60A . BCW60D BCW60A . BCW60D Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW60A . BCW60D Collector-Emitter-volt. â , 10 µA 20 20 40 100 140 200 300 460 â'" â'" â'" â'" BCW60A BCW60B BCW60C , V, IC = 50 mA 2 hFE hFE hFE hFE VCE = 5 V, IC = 2 mA 1 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 50 70 90 100 â'" â'" â'" â Diotec
Original
UL94V-0 BCW61A BCW61D

BCW60A

Abstract: BCW60B BCW60A . BCW60D BCW60A . BCW60D Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW60A . BCW60D Collector-Emitter-volt. ­ , µA 20 20 40 100 140 200 300 460 ­ ­ ­ ­ BCW60A BCW60B BCW60C BCW60D hFE , mA 2 hFE hFE hFE hFE VCE = 5 V, IC = 2 mA 1 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 50 70 90 100 ­ ­ ­ ­ ­ ­ ­ ­
Diotec
Original

BCW60A

Abstract: BCW60B BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A/B/C/D Package Dimensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40
Fairchild Semiconductor
Original

BCW60D

Abstract: fairchild SOT-23 Mark PC BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A/B/C/D Package Dimensions SOT-23 Dimensions in Millimeters ©2002
Fairchild Semiconductor
Original
fairchild SOT-23 Mark PC MARKING AB FAIRCHILD

BCW60A

Abstract: BCW60B CDIIL BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC PACKAGE OUTLINE DETAILS BCW60D = AD ALL DIMENSIONS , Vce = 5V; Ic = 200 nA; B = 200Hz F typ. 2 dB 41 BCW60A BCW60B BCW60C BCW60D RATINGS (at Ta = 25 , F < 6 dB D.C. current gain BCW60A 60B 60C 60D VCE = 5 V; IC = 10 |_iA hFE > - 20 40 , typ. BCW60A BCW60B BCW60C BCW60D A B C D 1,5 2 2 3 IO"4 125 175 250 350 250 350 500 700 18 24
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BCW60C

Abstract: BCW60B . 0.008g Marking Code: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: E8 , . Unit µA µA µA µA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE ­ 20 40 100 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ mA mA mA mA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 120 180 250 380 ­ ­ ­ ­ 220 310 460 630 ­ ­ ­ ­ BCW60A BCW60B , , f = 1kHz, B = 200Hz Small Signal Current Gain at VCE = 5V, IC = 2 mA, f = 1.0 kHZ BCW60A
General Semiconductor
Original
BCW60 BCW61 E8/10K

BCW60A

Abstract: BCW60B / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW60A , BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m , fT typ. 250 MHz F typ. 2 dB Page 1 of 3 BCW60A BCW60B BCW60C BCW60D RATINGS , Noise figure at RS = 2 kW IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz typ. typ. < F BCW60A , hie typ. 2,7 3,6 4,5 7,5 kW Data Sheet Page 2 of 3 BCW60A BCW60B BCW60C
Continental Device India
Original
C-120

2sc 1948 a

Abstract: ic Value 32 32 5.0 100 Unit V V V m Adc BCW60A,B,C,D CASE 318-02/03, STYLE 6 SOT-23 (TO , -5 = 1.0 x 0.75 x 0.62 in. *Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING BCW60A = AA , hFE BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hfe BCW60A , BCW60A,B,C,D E L E C T R IC A L C H A R A C T E R IS T IC S (continued) (Ta = 2S°C unless otherwise
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2sc 1948 a MPS3904

BCW60A

Abstract: BCW60B -23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL , 250 150 V V mA mW °C fT typ. 250 MHz F typ. 2 dB Page 1 of 3 BCW60A , kHz; B = 200 Hz typ. typ. < F BCW60A 60B VCE = 5 V; IC: 2 mA VCE = 1 V; IC: 50 mA Input , Sheet Page 2 of 3 BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio VCE = 5 V
Continental Device India
Original
Abstract: BCW60A BCW60B BCW60C BCW60D IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLIN E DETAILS A LL , 200 jiA; B = 200Hz 41 V V mA mW °C II BCW60A BCW60B BCW60C BCW60D RA TIN G S (at , > typ. typ. typ. < F BCW60A 8 pF 2 dB 6 dB 60B 60C 60D 20 40 100 D.C , f ft. BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio V c e = 5 V; I c = 2 -
OCR Scan

BCW60A

Abstract: BCW60D BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO 32 V Collector-Emitter , Gain hFE BCW60B Vce=5V, Ic=10HA 20 BCW60C 40 BCW60D 100 BCW60A Vce=5V, lc=2mA 120 220 BCW60B 180 310 BCW60C 250 460 BCW60D 380 630 BCW60A VCE=1V, lc=50mA 60 , Fairchild Semiconductor Corporation TYPE BCW60A BCW60B BCW60C BCW60D MARK. AA AB AC AD
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transistor ad 1v transistor mark code AD LC marking code transistor
Abstract: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N Silicon transistors Marking BCW6QA = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm , . max. typ. typ. 32 32 200 250 150 V V mA mW °C 250 M Hz 2 dB 41 BCW60A BCW60B BCW60C , = 0,5 V Noise figure at Rs = 2 k£l IC = 200 n.p.A; VCE = 5 V; f: 1 kHz; B = 200 Hz BCW60A fr Cc , 630 100 7,5 kii 42 BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio VCE = 5 V -
OCR Scan

85116

Abstract: . 8.8 mg Marking: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: GS18 / 10 k , DC Characteristics Parameter DC current gain Test condition VCE = 5 V, IC = 10 µA Part BCW60A BCW60B BCW60C BCW60D VCE = 5 V, IC = 2 mA BCW60A BCW60B BCW60C BCW60D VCE = 1 V, IC = 50 mA BCW60A BCW60B BCW60C , BCW60A BCW60B BCW60C BCW60D Turn - on time RL = 990 (see fig.1) VCC = 10 V, IC = 10 mA, IB(on) = - IB
Vishay Semiconductors
Original
85116 88/540/EEC 91/690/EEC D-74025

marking code ACP transistor

Abstract: marking code AAp series. MARKING TYPE NUMBER BCW60A BCW60B BCW60C BCW60D QUICK REFERENCE DATA SYMBOL V cBO V CEO 'CM , voltage peak collector current total power dissipation DC current gain BCW60A BCW60B BCW60C BCW60D , BCW60D hFE DC current gain BCW60A BCW60B BCW60C BCW60D Hfe DC current gain BCW60A BCW60B BCW60C BCW60D
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marking code ACP transistor marking code AAp
Abstract: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Sym bol Collector-Base Voltage , Emitter Cut-off Current DC Current Gain : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D Collector-Emitter Saturation Voltage VcE(sat , BCW60A BCW60B BCW 60C BCW 60D MARK. AA AB AC AD 0 -0 ©1999 Fairchild -
OCR Scan

313 Motorola

Abstract: 25CC MARKING_ | BCW60A - AA; BCW60B = AB; BCW60C = AC; BCW60D = AD ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) 96D 81947^ D _ - T'Zl O? BCW60A,B,C,D CASE 318-02/03, STYLE 6 SOT-23 (TO , 10 jiAdc, Vce = 5.0 Vdc) BCW60A 20 â'" BCW60B 30 â'" BCW60C 40 â'" BCW60D 100 â'" dC = 2.0 mAdc, Vce = 5.0 Vdc) BCW60A 120 220 BCW60B 175 310 BCW60C 250 460 BCW60D 380 630 (IC = 50 mAdc, Vce = 10 Vdc) BCW60A 60 _ BCW60B 70 â'" BCW60C 90 â'" BCW60D 100 â'" AC
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BCW61B BCW61C 313 Motorola 25CC 2N5086 6-SOT-23 marking 27
Abstract: BCW60A . BCW60D BCW60A . BCW60D Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW60A . BCW60D Collector-Emitter-volt. ­ , µA 20 20 40 100 140 200 300 460 ­ ­ ­ ­ BCW60A BCW60B BCW60C BCW60D hFE , mA 2 hFE hFE hFE hFE VCE = 5 V, IC = 2 mA 1 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 50 70 90 100 ­ ­ ­ ­ ­ ­ ­ ­ -
OCR Scan
I-150 BCX70 ITTT111-------
Abstract: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A/B/C/D Package Dimensions SOT-23 Dimensions in Millimeters ©2002 -
OCR Scan
Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567

C1567

Abstract: Q62702-C1567 . 0.008g Marking Code: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: E8 , . Unit µA µA µA µA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE ­ 20 40 100 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ mA mA mA mA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 120 180 250 380 ­ ­ ­ ­ 220 310 460 630 ­ ­ ­ ­ BCW60A BCW60B , , f = 1kHz, B = 200Hz Small Signal Current Gain at VCE = 5V, IC = 2 mA, f = 1.0 kHZ BCW60A
Siemens
Original
Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 C1567 C1517 marking AGs sot-23 marking code AJs sot-23 MARKING CODE JS
Abstract: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW60A , BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m , fT typ. 250 MHz F typ. 2 dB Page 1 of 3 BCW60A BCW60B BCW60C BCW60D RATINGS , Noise figure at RS = 2 kW IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz typ. typ. < F BCW60A , hie typ. 2,7 3,6 4,5 7,5 kW Data Sheet Page 2 of 3 BCW60A BCW60B BCW60C -
OCR Scan
T-29-17

l9902

Abstract: BCW General Purpose Transistor -23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL , 250 150 V V mA mW °C fT typ. 250 MHz F typ. 2 dB Page 1 of 3 BCW60A , kHz; B = 200 Hz typ. typ. < F BCW60A 60B VCE = 5 V; IC: 2 mA VCE = 1 V; IC: 50 mA Input , Sheet Page 2 of 3 BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio VCE = 5 V
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l9902 BCW General Purpose Transistor
Showing first 20 results.