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Part : BCW32,215 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.02 Price Each : $0.03
Part : BCW32LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 3,797 Best Price : $0.02 Price Each : $0.1090
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Part : BCW32 Supplier : Nexperia Manufacturer : Farnell element14 Stock : 1,551 Best Price : £0.0239 Price Each : £0.1540
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BCW32 Datasheet

Part Manufacturer Description PDF Type
BCW32 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BCW32 Fairchild Semiconductor NPN General Purpose Amplifier Original
BCW32 Kexin NPN General Purpose Transistors Original
BCW32 Korea Electronics General Purpose Transistor Original
BCW32 Philips Semiconductors Small-signal Transistors Original
BCW32 Philips Semiconductors NPN general purpose transistors Original
BCW32 Philips Semiconductors NPN general purpose transistors Original
BCW32 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW32 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW32 TY Semiconductor NPN General Purpose Transistors - SOT-23 Original
BCW32 Continental Device India Silicon Planar Epitaxial Transistor Scan
BCW32 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BCW32 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
BCW32 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCW32 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan
BCW32 Korea Electronics General Purpose Transistor Scan
BCW32 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan
BCW32 Korea Electronics Transistors Scan
BCW32 Motorola European Master Selection Guide 1986 Scan
BCW32 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BCW32

Catalog Datasheet MFG & Type PDF Document Tags

BCW32

Abstract: DISCRETE SEMICONDUCTORS DAT BCW31; BCW32; BCW33 NPN general purpose transistors Product , BCW31; BCW32; BCW33 NPN general purpose transistors PINNING FEATURES â'¢ Low current (100 mA , NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top view , ' DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 BCW32 BCW33 LIMITING VALUES , transistors BCW31; BCW32; BCW33 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS
NXP Semiconductors
Original
BCW29 BCW30 MAM255 R75/05/

BCW33

Abstract: BCW32 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 D1 BCW32 D2 BCW33 D3 BCW31 BCW32 BCW33 BCW31R D4 BCW32R D5 BCW33R D6 E C BCW31 - BCW29 BCW32 - BCW30 BCW33 - N/A B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter , Saturation Voltage VBE(SAT) 750 850 Collector- Base Cut-Off Current ICBO BCW31 BCW32 hFE
Zetex Semiconductors
Original
BCW31-D1 BCW32R-D5 PARTMARKING MV BCW31R-D4 DSA003672

BCW32R

Abstract: BCW33 ° max BCW31 = D1 BCW32 = D2 BCW33 = D3 BCW31R = D4 BCW32R = D5 BCW33R = D6 R-types are available on , Copyrighted By Its Respective Manufacturer BCW31 N AMER PHILIPS/DISCRETE BCW32"" BCW33 OLE D bt,S3T31 , Hz BCW31 BCW32 BCW33 hFE " > < 110 220 200 450 420 800 VCBO VCEO 'CM max. max. max. 32 32 200 , b 3 2 S BCW32 BCW33 RATINGS Limiting values in accordance with the Absolute Maximum System , = 200 Hz â¡ bE D BCW31;R BCW32;R BCW33;R h BCW31 BCW32 BCW33 hFE typ. 90 150 270 hFE
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OCR Scan
IEC134 N4100 001SL3 7Z68043

BCW32

Abstract: BCW31 -23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 , Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting , V IC = 2 mA; VCE = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance
Continental Device India
Original
C-120

BCW32

Abstract: BCW33 BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 , Noise figure at Rs = 2 kQ IC = 200 |iA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 , Respective Manufacturer BCW31 BCW32 BCW33 RATINGS (at Ta = 25°C unless otherwise specified) Limiting , VBEsat typ. 850 mV D.C. current gain BCW31 BCW32 BCW33 lC = 10 |xA, Vce = 5 V hFE typ. 90 150 270
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OCR Scan
33T4 00007S3
Abstract: Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32 , and BCW30. 3 1 MARKING TYPE NUMBER MARKING CODE BCW31 BCW32 D2* BCW33 2 , Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 , = 0; V qb = 32 V BCW31 BCW32 150 BCW33 270 DC current gain lc = 2 mA; VCE = 5 V BCW31 110 BCW32 200 450 BCW33 420 800 - 220 collector-emitter saturation -
OCR Scan
Abstract: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin , |lA; VCE = 5 V; f = 1 kHz; B = 200 Hz hpE VCBO VCEO ICM BCW31 BCW32 BCW33 110 200 420 , °C fl typ. 300 M Hz F < 10 dB Ptot 39 L BCW31 BCW32 BCW33 , 210 mV 850 mV BCW31 BCW32 BCW33 hFE hpE typ. > < Collector capacitance at f = 1 MHz -
OCR Scan
Abstract: voltage (open emitter) 110 220 BCW32 200 450 BCW33 420 800 v CBO max. 32 V , = 200 Hz 0 BCW33 110 220 > < 0 BCW32 90 typ. Collector capacitance at f , BCW31;R BCW32;R BCW33;R < m 10 â'" dB N il i i i i r i i i i i j 2 0 0 T a m b (°C , PHILIPS/DISCRETE ObE D n BCW31 BCW32 BCW33 Fig. 7. Fig. 8. August 1980 281 BCW31 N AHER^'p HILIPS/DISCRETE BCW32 BCW33 DtE D â  bt.S3 T 31 0 0 1 Sb 3 b T â  r-tf-W -
OCR Scan
0Q15L35 53T31

BCW33

Abstract: BCW29 Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW31 BCW32 Collector-Emitter-volt. ­ , µA BCW31 BCW32 BCW33 hFE hFE hFE ­ ­ ­ 90 150 270 ­ ­ ­ VCE = 5 V, IC = 2 mA BCW31 BCW32 BCW33 hFE hFE hFE 110 200 420 ­ ­ ­ 220 450 800 ­ ­ , , BCW30 BCW31 = D1 BCW32 = D2 BCW33 = D3 Tested with pulses tp = 300 µs, duty cycle 2% ­ Gemessen
Diotec
Original
UL94V-0
Abstract: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 , Q0QQ752 39 10 J JT Ld JJ Ptot LkJ U! 8> ru BCW31 BCW32 BCW33 200 110 420 , ; f = 1 kHz; B = 200 Hz 1 > < max. max. max. â  dB CDIL BCW31 BCW32 BCW33 , mV BCW31 BCW32 BCW33 D.C. current gain i c = io nA, v Ce = 5 v IC = 2 mA; V CE = 5 V hpE -
OCR Scan
000Q7S3
Abstract: BCW32 BCW32 NPN General Purpose Amplifier â'¢ This device is designed for general purpose applications at collector currents to 300mA. â'¢ Sourced from process 10. 3 2 1 SOT-23 Mark: D2 , Fairchild Semiconductor Corporation Rev. A, August 2002 BCW32 400 Vce = 5V #21; 125 °C 300 #21; , Capacitance vs Reverse Voltage Rev. A, August 2002 BCW32 Typical Characteristics (Continued , ) 125 150 Figure 8. Power Dissipation vs Ambient Temperature Rev. A, August 2002 BCW32 Fairchild Semiconductor
Original
Abstract: Transistors IC SMD Type Product specification BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 , IC SMD Type Product specification BCW31,BCW32,BCW33 Electrical Characteristics Ta = 25 , BCW32 110 200 450 420 BCW33 120 800 Base to emitter saturation voltage VBE(sat , mV mV pF 100 MHz 10 dB hFE Classification TYPE BCW31 BCW32 BCW33 TY Semiconductor
Original

BCW32

Abstract: bcw33 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS -B C W 3 1 -D 1 BCW32 - D2 BCW33 - D3 COMPLEMENTARY TYPES - BCW31 - BCW29 - BCW32 - BCW30 - BCW33 - N/A BC W 31R -D 4 BCW32R - D5 BCW33R - D6 BCW31 BCW32 BCW33 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector , Forward Current Transfer Ratio BCW32 BCW33 Transition Frequency Collector Capacitance Noise Figure SYMBOL
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OCR Scan

smd transistor marking D3

Abstract: BCW33 Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). , printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW31,BCW32,BCW33 Electrical , BCW31 DC current gain BCW32 110 200 450 420 BCW33 120 800 Base to emitter , Classification TYPE BCW32 BCW33 Marking 2 BCW31 D1 D2 D3 www.kexin.com.cn 550 250
Kexin
Original
smd transistor marking D3 SMD TRANSISTOR D2 smd TRANSISTOR marking ku marking D2 SOT-23

BCW31

Abstract: BCW32 / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 , EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain , BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector­base , = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance at f = 1 MHz IE =
Continental Device India
Original

bcw33

Abstract: n i BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.14 Ö3B 3 2.6 2 .4 · ^pT59 § 0.70 0.50 Pin configuration 1 = BASE 2 = , . max. max. max. typ. BCW31 BCW32 BCW33 200 420 110 800 450 220 V 32 32 V mA 200 250 150 300 mW °c MHz hFE VCBO VcEO ·c m P lot T) fT F < 10 dB 39 BCW31 BCW32 BCW33 RA TIN G S (at
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OCR Scan
Abstract: -23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS Nâ'"Pâ'"N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 , Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at T A = 25°C unless otherwise specified) Limiting , mV 750 mV VCEsat typ . VBEsat typ . IC: 50 mA; lB: 2,5 mA 210 mV 850 mV BCW31 BCW32 Continental Device India
Original

BCW32

Abstract: bcw31 bcw32 bcw33 m bbSBTBl DOSHSb? =114 «APX N AUER PHILIPS/DISCRETE b?E ]> y V. BCW31 BCW32 BCW33 SILICON , juA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 200 420 hFE < 220 450 800 vCBO , Copyrighted By Its Respective Manufacturer BCW31 BCW32 BCW33 â  005L»5bfl flSO â  APX N AMER PHILIPS , PHILIPS/DISCRETE b7E D J V BCW31 BCW32 BCW33 D.C. current gain BCW31 BCW32 BCW33 lc=10M, Vce = 5V hFE , BCW32 n AMER PHILIPS/DISCRETE b7E T> BCW33 j _ 600 â fe 400 200 -2 10 400 V ce sat ImV) 300
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OCR Scan
bcw31 bcw32 bcw33 marking code 533-1 lg tv system ic 5452N

ScansUX40

Abstract: J 449 711002b 0DbflS33 STÛ IPHIN J V BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N , = 5 V BCW31 BCW32 BCW33 hFE > < 110 220 200 450 420 800 Collector-base voltage (open emitter , BCW32 I BCW33 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134 , at Rg = 2 ki2 lc = 200 (iA; VQE = 5V f = 1 kHz; B = 200 Hz hFE fT A BCW31 BCW32 BCW33 BCW31 BCW32 , Philips Semiconductors. BCW31 â'" 711002b DQtô53b 20? "PHIN BCW32 BCW33 600 400 200 10"2 IO"1 1 10 Ic(mA
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OCR Scan
ScansUX40 J 449 7Z6a MBBQ12 7Z68041

bcw31 bcw32 bcw33

Abstract: marking code 10 sot23 DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors , specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES PINNING · Low current , TYPE NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top , NAME - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 BCW32 BCW33 , Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33
Philips Semiconductors
Original
marking code 10 sot23 SCA76
Abstract: /BCW32 THERMAL DATA R t hj-amb · Thermal Resistance Junction-Ambient Max 420 o C/W · Mounted on , cycle 2 % 2/4 BCW31/BCW32 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 , 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCW31/BCW32 Information STMicroelectronics
Original
BCW31/32 BCW31/BCW32

d2p marking code philips

Abstract: marking d3p Philips Semiconductors Product specification NPN general purpose transistors FEATURES · Low current (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 PINNING PIN 1 2 base em itter collector DESCRIPTION APPLICATIONS · G eneral purpose sw itching and amplification. 3 DESCRIPTION NPN , accordance with the Absolute M aximum Rating System (IEC 134). BCW31 ; BCW32; BCW33 SYMBOL V CBO , 25 °C unless otherwise specified. BCW31; BCW32; BCW33 SYMBOL ICBO PARAMETER collector
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OCR Scan
d2p marking code philips marking d3p 4-20 mA 1997 marking D2p D3P SOT23 D2p marking

0070000

Abstract: A A mW °C °C 1/4 T) March 1996 7c i2 ':l2 3 7 GD7ÖDD7 5 4 7 BCW31/BCW32 THERMAL , 0070000 483 7 ^ 2 3 7 BCW31/BCW32 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N 0 0.85
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OCR Scan
0070000 100MH

BCW31

Abstract: BCW31R BCW31 BCW32 BCW33 NPN Silicon Planar Small Signal Transistors DESCRIPTION These devices are , : transfer ratio BCW31 hFE 110 90 220 lc = 10 nA. VCE = 5V lc = 2 mA, VCE = 5V BCW32 hFE 200 150 450 lc , BCW32 . BCW33 . BCW31R . BCW32R . BCW33R . D1 D2 D3 D4 D5 D6 BCW31/32/33, Page 3 SOT-23 TRANSISTORS & , U6 BCW32 D2 D5 BSS65 L1 L5 BCW33 D3 D6 BSS66 M6 M8 BCW60A AA - BSS67 M7 M9 BCW60B AB BSS69 L2 L6 , 300 1110/220 2/5 0.25 10/0.5 300 BCW32 30 20 100 300 200/450 2/5 0.25 10/0.5 300 BCW33 30 20 100 300
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OCR Scan
BCV72 BFQ31 BFQ31A ferranti sot-23 Marking l7 BCW60C BCW60D FMMT4124 FMMT-A20 BCW89 FMMT3905
Abstract: purpose transistors FEATURES · Low curren t (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 , j-a Note 1. T ra nsisto r m ounted on an FR4 printed-circuit. BCW31 ; BCW32; BCW33 PARAMETER , Plastic surface mounted package; 3 leads BCW31 ; BCW32; BCW33 SOT23 - J , bjective specification P relim inary specification P roduct specification BCW31 ; BCW32; BCW33 This , NPN general purpose transistors NOTES BCW31 ; BCW32; BCW33 1999 A pr 13 6 Philips S em -
OCR Scan
Showing first 20 results.