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Part : BCW31,215 Supplier : Nexperia Manufacturer : Avnet Stock : 53,438 Best Price : €0.0235 Price Each : €0.0294
Part : BCW31,215 Supplier : Nexperia Manufacturer : Avnet Stock : 3,000 Best Price : $0.0345 Price Each : $0.0362
Part : BCW31,215 Supplier : Nexperia Manufacturer : Newark element14 Stock : 1,518 Best Price : $0.0470 Price Each : $0.25
Part : BCW31,215 Supplier : Nexperia Manufacturer : Future Electronics Stock : - Best Price : $0.0481 Price Each : $0.0666
Part : BCW31,215 Supplier : Nexperia Manufacturer : Future Electronics Stock : - Best Price : $0.0397 Price Each : $0.0433
Part : BCW31 Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 15,686 Best Price : $0.04 Price Each : $0.04
Part : BCW31215 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 999 Best Price : $0.04 Price Each : $0.04
Part : BCW31 Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 5,730 Best Price : - Price Each : -
Part : BCW31 Supplier : NEC Manufacturer : Bristol Electronics Stock : 30,000 Best Price : $0.0158 Price Each : $0.1050
Part : BCW31 Supplier : Diodes Manufacturer : Bristol Electronics Stock : 3,000 Best Price : - Price Each : -
Part : BCW31,215 Supplier : NXP Semiconductors Manufacturer : Bristol Electronics Stock : 8,900 Best Price : - Price Each : -
Part : BCW31TA Supplier : Zetex Semiconductors Manufacturer : Bristol Electronics Stock : 33,000 Best Price : - Price Each : -
Part : BCW31 Supplier : NXP Semiconductors Manufacturer : ComSIT Stock : 27,000 Best Price : - Price Each : -
Part : BCW31,215 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 1,518 Best Price : $0.03 Price Each : $0.1660
Part : BCW31,215 Supplier : Nexperia Manufacturer : Farnell element14 Stock : 1,583 Best Price : £0.0418 Price Each : £0.1460
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BCW31 Datasheet

Part Manufacturer Description PDF Type
BCW31 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BCW31 Fairchild Semiconductor NPN General Purpose Amplifier Original
BCW31 Fairchild Semiconductor NPN General Purpose Amplifier Original
BCW31 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BCW31 Kexin NPN General Purpose Transistors Original
BCW31 Korea Electronics General Purpose Transistor Original
BCW31 Philips Semiconductors NPN General Purpose Transistor Original
BCW31 Philips Semiconductors NPN general purpose transistors Original
BCW31 Philips Semiconductors Small-signal Transistors Original
BCW31 Philips Semiconductors NPN general purpose transistors Original
BCW31 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW31 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW31 ROHM TRANS GP BJT NPN 32V 0.1A 3SMT Original
BCW31 TY Semiconductor NPN General Purpose Transistors - SOT-23 Original
BCW31 Allegro MicroSystems TRANS GP BJT NPN 20V 3TO-236AA Scan
BCW31 Continental Device India Silicon Planar Epitaxial Transistor Scan
BCW31 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BCW31 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BCW31 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
BCW31 Ferranti Semiconductors Quick Reference Guide 1985 Scan
Showing first 20 results.

BCW31

Catalog Datasheet MFG & Type PDF Document Tags

BCW32R

Abstract: BCW33 ° max BCW31 = D1 BCW32 = D2 BCW33 = D3 BCW31R = D4 BCW32R = D5 BCW33R = D6 R-types are available on , Hz BCW31 BCW32 BCW33 hFE " > < 110 220 200 450 420 800 VCBO VCEO 'CM max. max. max. 32 32 200 , Its Respective Manufacturer -LJ_ BCW31 N AHER PHILIPS/DISCRETE Db ED_m b b S 3 «=] 31 0 01S , = 200 Hz â¡ bE D BCW31;R BCW32;R BCW33;R h BCW31 BCW32 BCW33 hFE typ. 90 150 270 hFE , Manufacturer I This Material Copyrighted By Its Respective Manufacturer . BCW31 _,. BCW32 N AMER
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OCR Scan
IEC134 BCW31R-D4 BCW32R-D5 N4100 S3T31 001SL3 7Z68043

BCW32

Abstract: DISCRETE SEMICONDUCTORS DAT BCW31; BCW32; BCW33 NPN general purpose transistors Product , BCW31; BCW32; BCW33 NPN general purpose transistors PINNING FEATURES â'¢ Low current (100 mA , NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top view , .1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCW31 PACKAGE NAME â , transistors BCW31; BCW32; BCW33 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS
NXP Semiconductors
Original
BCW29 BCW30 MAM255 R75/05/

d2p marking code philips

Abstract: marking d3p current (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 PINNING PIN 1 2 base em itter collector , TYPE NUMBER BCW31 BCW 32 BCW 33 MARKING CODE D ip D2p D3p H 1 Ei Top View MAM255 Fig. 1 , DC current gain BCW31 BCW 32 BCW 33 T"amb - 2 5 CONDITIONS open em itter open base °C - MIN , accordance with the Absolute M aximum Rating System (IEC 134). BCW31 ; BCW32; BCW33 SYMBOL V CBO , 25 °C unless otherwise specified. BCW31; BCW32; BCW33 SYMBOL ICBO PARAMETER collector
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OCR Scan
d2p marking code philips marking d3p 4-20 mA 1997 marking D2p D3P SOT23 D2p marking

BCW32

Abstract: BCW33 BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 , Noise figure at Rs = 2 kQ IC = 200 |iA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 , Respective Manufacturer BCW31 BCW32 BCW33 RATINGS (at Ta = 25°C unless otherwise specified) Limiting , VBEsat typ. 850 mV D.C. current gain BCW31 BCW32 BCW33 lC = 10 |xA, Vce = 5 V hFE typ. 90 150 270
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OCR Scan
33T4 00007S3

BCW33

Abstract: BCW32 SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 D1 BCW32 D2 BCW33 D3 BCW31 BCW32 BCW33 BCW31R D4 BCW32R D5 BCW33R D6 E C BCW31 - BCW29 BCW32 - BCW30 BCW33 - N/A B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter , Saturation Voltage VBE(SAT) 750 850 Collector- Base Cut-Off Current ICBO BCW31 BCW32 hFE
Zetex Semiconductors
Original
BCW31-D1 PARTMARKING MV DSA003672
Abstract: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin , |lA; VCE = 5 V; f = 1 kHz; B = 200 Hz hpE VCBO VCEO ICM BCW31 BCW32 BCW33 110 200 420 , °C fl typ. 300 M Hz F < 10 dB Ptot 39 L BCW31 BCW32 BCW33 , 210 mV 850 mV BCW31 BCW32 BCW33 hFE hpE typ. > < Collector capacitance at f = 1 MHz -
OCR Scan

BCW32

Abstract: BCW31 -23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 , Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting , V IC = 2 mA; VCE = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance
Continental Device India
Original
C-120

bcw33

Abstract: n i BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 , . max. max. max. typ. BCW31 BCW32 BCW33 200 420 110 800 450 220 V 32 32 V mA 200 250 150 300 mW °c MHz hFE VCBO VcEO ·c m P lot T) fT F < 10 dB 39 BCW31 BCW32 BCW33 RA TIN G S (at , BCW31 BCW 32 BCW33 i c = io nA, Vc e = 5 v I c = 2 mA; Vce = 5 V Collector capacitance at f = 1 MHz
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OCR Scan
Abstract: Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32 , and BCW30. 3 1 MARKING TYPE NUMBER MARKING CODE BCW31 BCW32 D2* BCW33 2 , Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32; BCW33 , = 0; V qb = 32 V BCW31 BCW32 150 BCW33 270 DC current gain lc = 2 mA; VCE = 5 V BCW31 110 BCW32 200 450 BCW33 420 800 - 220 collector-emitter saturation -
OCR Scan
Abstract: BCW31 . BCW33 BCW31 . BCW33 NPN Surface Mount General Purpose Si-Epi-Planar Transistors , VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25°C) BCW31 BCW32 32 V 32 V 5V 250 mW 1) 100 mA 200 mA , Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 hFE hFE hFE hFE hFE hFE VCEsat VCEsat ­ , % http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW31 . BCW33 Characteristics (Tj = 25 , Empfohlene komplementäre PNP-Transistoren Marking - Stempelung F RthA ­ ­ < 420 K/W 1) BCW29, BCW30 BCW31 = Diotec
Original
UL94V-0

BCW33

Abstract: BCW29 BCW31 . BCW33 BCW31 . BCW33 Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW31 BCW32 Collector-Emitter-volt. ­ , µA BCW31 BCW32 BCW33 hFE hFE hFE ­ ­ ­ 90 150 270 ­ ­ ­ VCE = 5 V, IC = 2 mA BCW31 BCW32 BCW33 hFE hFE hFE 110 200 420 ­ ­ ­ 220 450 800 ­ ­ , , Schaltverhältnis 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BCW31 . BCW33
Diotec
Original

BCW31

Abstract: BCW31R BCW32 . BCW33 . BCW31R . BCW32R . BCW33R . D1 D2 D3 D4 D5 D6 BCW31/32/33, Page 3 SOT-23 TRANSISTORS & , BCW31 BCW32 BCW33 NPN Silicon Planar Small Signal Transistors DESCRIPTION These devices are , environments. ABSOLUTE MAXIMUM RATINGS Parameter Symbol BCW31, 32 & 33 Unit Collector-Base Voltage VCBO 30 , semiconductors J® SOT-23 Actual size in inset BCW31/32/33 CHARACTERISTICS (at T; = 25°C unless otherwise stated). Parameter Symbol BCW31, 32 & 33 Unit Test Conditions Min. Typ. Max. Collector-base
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OCR Scan
BCV72 BFQ31 BFQ31A ferranti sot-23 Marking l7 BCW31/32/33 BCW60B BCW60C BCW60D FMMT4124 FMMT-A20
Abstract: N AMER PHILIPS/DISCRETE bbSBTBl D015b31 0 ObE D BCW31 B e rn ? . BCW33 SILICON PLANAR , BCW31 D.C. current gain at T: = 25 °C lc = 2 mA; V C E = 5 V hF E > < Collector-base , OA - D.C. current gain BCW31 Iq = 10 pA, V c e = 5 V h FE lc = 2 m A ; V CE = 5 V h , BCW31;R BCW32;R BCW33;R < m 10 â'" dB N il i i i i r i i i i i j 2 0 0 T a m b (°C , 00 Fig. 3 Power derating curve. June 1987 279 i i_ _ _ _ BCW31 -
OCR Scan
0Q15L35 53T31
Abstract: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 , Q0QQ752 39 10 J JT Ld JJ Ptot LkJ U! 8> ru BCW31 BCW32 BCW33 200 110 420 , ; f = 1 kHz; B = 200 Hz 1 > < max. max. max. â  dB CDIL BCW31 BCW32 BCW33 , mV BCW31 BCW32 BCW33 D.C. current gain i c = io nA, v Ce = 5 v IC = 2 mA; V CE = 5 V hpE -
OCR Scan
000Q7S3

bcw31 bcw32 bcw33

Abstract: marking code 10 sot23 DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32; BCW33 NPN general purpose transistors , specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES PINNING · Low current , TYPE NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top , . Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCW31 PACKAGE , Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33
Philips Semiconductors
Original
bcw31 bcw32 bcw33 marking code 10 sot23 SCA76

BCW31

Abstract: BCW32 SEMICONDUCTOR BCW31/32 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L 3 H G A 2 D Complementary to BCW29/30. 1 MAXIMUM RATING (Ta=25) UNIT VCBO 30 V Collector-Emitter Voltage , BCW31 BCW32 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN , pF - - 10 dB BCW31 DC Current Gain BCW32 Collector-Emitter Saturation Voltage
KEC
Original
BCW31/32
Abstract: Transistors IC SMD Type Product specification BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 , IC SMD Type Product specification BCW31,BCW32,BCW33 Electrical Characteristics Ta = 25 , cutoff current IC = 0; VEB = 5 V 100 nA hFE IC = 2 mA; VCE = 5 V BCW31 DC current gain , mV mV pF 100 MHz 10 dB hFE Classification TYPE BCW31 BCW32 BCW33 TY Semiconductor
Original
Abstract: purpose transistors FEATURES · Low curren t (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 , ents: B C W 29 and BCW 30. 3 _ 3 MARKING TYPE NUMBER BCW31 BCW 32 BCW 33 MARKING CODE , j-a Note 1. T ra nsisto r m ounted on an FR4 printed-circuit. BCW31 ; BCW32; BCW33 PARAMETER , . 100 10 100 UNIT nA I^A nA Iebo hFE em itte r cut-off current DC cu rre n t gain BCW31 BCW 32 BCW 33 DC cu rre n t gain BCW31 BCW 32 BCW 33 lc = 0; V eb = 5 V lc = 10 jliA; V CE = 5 V - -
OCR Scan

smd transistor marking D3

Abstract: BCW33 Transistors IC SMD Type NPN General Purpose Transistors BCW31,BCW32,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). , printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW31,BCW32,BCW33 Electrical , BCW31 DC current gain BCW32 110 200 450 420 BCW33 120 800 Base to emitter , Classification TYPE BCW32 BCW33 Marking 2 BCW31 D1 D2 D3 www.kexin.com.cn 550 250
Kexin
Original
smd transistor marking D3 SMD TRANSISTOR D2 smd TRANSISTOR marking ku marking D2 SOT-23
Abstract: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E Mark: D1 / D2 / D3 SOT-23 B NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. See BCW71 for characteristics. Absolute Maximum Ratings , Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max *BCW31 / 32 , . ã1997 Fairchild Semiconductor Corporation 3-236 BCW31 / BCW32 / BCW33 NPN General Purpose Fairchild Semiconductor
Original
Abstract: BCW31/32 SMALL SIGNAL NPN TRANSISTORS Type BCW 31 BCW 32 s Marking D1 D2 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW , Temperature o Value 32 32 5 0.1 0.2 300 -65 to 150 150 Unit V V V A A mW o o C C 1/4 BCW31 , cycle 2 % 2/4 BCW31/BCW32 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 , 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 BCW31/BCW32 Information STMicroelectronics
Original
BCW31/BCW32

D3P SOT23

Abstract: transistor SOT23 D3p DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general , transistors BCW31; BCW32; BCW33 FEATURES PINNING · Low current (100 mA) PIN · Low voltage , CODE BCW31 D2p BCW33 Top view MAM255 D1p BCW32 2 2 D3p Fig , V BCW31 110 220 BCW32 200 450 BCW33 fT 1997 Jan 29 transition frequency , Product specification NPN general purpose transistors BCW31; BCW32; BCW33 LIMITING VALUES In
Philips Semiconductors
Original
transistor SOT23 D3p SCA53

BCW31

Abstract: BCW32 / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 , EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain , BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector­base , = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance at f = 1 MHz IE =
Continental Device India
Original

BCW29

Abstract: BCW30 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general , Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES , MARKING MARKING CODE(1) TYPE NUMBER BCW31 BCW32 D2 BCW33 1 D1 2 2 D3 Top , specification NPN general purpose transistors BCW31; BCW32; BCW33 THERMAL CHARACTERISTICS SYMBOL Rth , 100 nA BCW31 - 190 - BCW32 - 330 - - 600 - BCW31 110 -
Philips Semiconductors
Original
BP317
Abstract: m bbSBTBl DOSHSb? =114 «APX N AUER PHILIPS/DISCRETE b?E ]> y V. BCW31 BCW32 BCW33 SILICON , juA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 200 420 hFE < 220 450 800 vCBO , Copyrighted By Its Respective Manufacturer BCW31 BCW32 BCW33 â  005L»5bfl flSO â  APX N AMER PHILIPS , PHILIPS/DISCRETE b7E D J V BCW31 BCW32 BCW33 D.C. current gain BCW31 BCW32 BCW33 lc=10M, Vce = 5V hFE , 1991 451 This Material Copyrighted By Its Respective Manufacturer BCW31 m ^53^31 00E4570 MOT «APX Diotec
Original
150/C 100/C
Showing first 20 results.