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Part : BCW30,215 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : $0.0176 Price Each : $0.0192
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Part : BCW30 Supplier : Nexperia Manufacturer : Newark element14 Stock : 2,480 Best Price : $0.0340 Price Each : $0.1780
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Part : BCW30LT1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 2,202 Best Price : $0.0360 Price Each : $0.17
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Part : BCW30235 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 9,628 Best Price : $0.04 Price Each : $0.04
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Part : BCW30 Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 2,725 Best Price : $0.0883 Price Each : $0.0883
Part : BCW30LT1G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 24,000 Best Price : $0.0467 Price Each : $0.0467
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Part : BCW30 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 1,529 Best Price : $0.04 Price Each : $0.1660
Part : BCW30 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : 1,529 Best Price : $0.04 Price Each : $0.1660
Part : BCW30,215 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.03 Price Each : $0.0340
Part : BCW30LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,202 Best Price : $0.03 Price Each : $0.1340
Part : BCW30LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,202 Best Price : $0.03 Price Each : $0.1340
Part : BCW30LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 6,000 Best Price : $0.02 Price Each : $0.0350
Part : BCW30 Supplier : Nexperia Manufacturer : Farnell element14 Stock : 1,529 Best Price : £0.0176 Price Each : £0.1540
Part : BCW30LT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 6,000 Best Price : £0.0158 Price Each : £0.02
Part : BCW30,215 Supplier : Nexperia Manufacturer : New Advantage Stock : 237,000 Best Price : $0.0432 Price Each : $0.0459
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BCW30 Datasheet

Part Manufacturer Description PDF Type
BCW30 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BCW30 Fairchild Semiconductor PNP General Purpose Amplifier Original
BCW30 Fairchild Semiconductor PNP General Purpose Amplifier Original
BCW30 Galaxy Semi-Conductor Holdings PNP General Purpose Amplifier Original
BCW30 Kexin PNP General Purpose Transistors Original
BCW30 Korea Electronics General Purpose Transistor Original
BCW30 Philips Semiconductors PNP general purpose transistors Original
BCW30 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW30 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BCW30 ROHM TRANS GP BJT PNP 32V 0.1A 3SMT Original
BCW30 STMicroelectronics SMALL SIGNAL PNP TRANSISTORS Original
BCW30 STMicroelectronics SMALL SIGNAL PNP TRANSISTOR Original
BCW30 TY Semiconductor PNP General Purpose Transistors - SOT-23 Original
BCW30 Allegro MicroSystems TRANS GP BJT PNP 20V 3TO-236AA Scan
BCW30 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BCW30 Continental Device India Silicon Planar Epitaxial Transistor Scan
BCW30 Fairchild Semiconductor PNP General Purpose Amplifier Scan
BCW30 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan
BCW30 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BCW30 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan
Showing first 20 results.

BCW30

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -23. 120 260 215 500 10 dB Marking code BCW29 = C1 BCW30 = C2 3 1 BCW29R = C4 BCW30R , N AMER P H I L I P S / D I S CR E T E bb53T31 D01SbS3 DbE D BCW29 BCW30 SILICON PLANAR , D.C. current gain at Tj = 25 °C - l c = 2 mA; - V c e = 5 V BCW30 hF E Collector-base , 1987 269 N AMER P H I L I P S / D I S CR E T E DbE D bbSBTBl 001SL24 3 BCW29 BCW30 V , ObE D â  bbSBTBl D0]iSb2S 5 â  BCW29 BCW30 Silicon planar epitaxial transistors -
OCR Scan
53T31 IEC134 001SLE7

bcw30

Abstract: BCW29 BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors , 200 mA 200 mA -55.+150°C -55.+150°C BCW30 Characteristics (Tj = 25°C) Min. DC current gain ­ Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA BCW29 BCW30 BCW29 BCW30 hFE hFE hFE hFE - , / © Diotec Semiconductor AG 1 BCW29, BCW30 Characteristics (Tj = 25°C) Min. Base-Emitter saturation , komplementäre NPN-Transistoren Marking - Stempelung F RthA ­ ­ < 420 K/W 1) BCW31 . BCW33 BCW29 = C1 BCW30 =
Diotec
Original
UL94V-0

BCW29

Abstract: BCW30 BCW29, BCW30 BCW29, BCW30 Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW29 BCW30 Collector-Emitter-volt. ­ , BCW29 BCW30 hFE hFE ­ ­ 90 150 ­ ­ - VCE = 5 V, - IC = 2 mA BCW29 BCW30 hFE , http://www.diotec.com/ 1 BCW29, BCW30 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min , NPN-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) BCW31 . BCW33 BCW29 = C1 BCW30 =
Diotec
Original

BCW30

Abstract: pnp general purpose amplifier BCW30 Pb Ideally suited for automatic insertion. Lead-free Epitaxial planar die construction , -23 ORDERING INFORMATION Type No. BCW30 Marking Package Code C2X SOT-23 MAXIMUM RATING @ Ta , specification PNP General Purpose Amplifier BCW30 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise , Galaxy Electrical Production specification PNP General Purpose Amplifier BCW30 PACKAGE , Shipping BCW30 SOT-23 3000/Tape&Reel Document number: BL/SSSTC103 Rev.A www.galaxycn.com 3
BL Galaxy Electrical
Original
pnp general purpose amplifier pnp bcw30 Amplifier "marking code" D 3000/T

SOT23 MARKING CODE 720

Abstract: BCW29 Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 , Kong. * = t : Made in Malaysia. TYPE NUMBER MARKING CODE*1) BCW29 C1* BCW30 C2* Top view Fig. 1 , Philips Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 THERMAL , lc = 0; VEB = -5 V - - -100 nA hfe DC current gain BCW29 BCW30 lc = -10 |LIA; Vce = -5V - 90 150 - DC current gain BCW29 BCW30 lc = -2 mA; VCE = -5 V 120 215 - 260 500 VcEsat collector-emitter
-
OCR Scan
BCW32 SOT23 MARKING CODE 720 sot23 marking JR

transistor 720 smd

Abstract: Transistors IC SMD Type Product specification BCW29,BCW30 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 1.3-0.1 , Product specification BCW29,BCW30 Electrical Characteristics Ta = 25 Parameter Symbol , BCW30 260 500 VCE(sat) Base to emitter saturation voltage VBE(sat) IC = -10 mA; IB = , 100 MHz 10 dB hFE Classification TYPE BCW29 BCW30 Marking C1 C2 http
TY Semiconductor
Original
transistor 720 smd

BCW29

Abstract: BCW30 N AMER PHILIPS/DISCRETE DbE D ^53^31 0Q15bE3 1 BCW29 BCW30 T-M-il SILICON PLANAR EPITAXIAL , applications in thick and thin-film circuits. QUICK REFERENCE DATA BCW29 BCW30 D.C. current gain at Tj = , BCW29 BCW30 ratings Limiting values in accordance with the Absolute Maximum System (IEC134 , 200 Hz BCW29 hFE hFE fT typ. 90 150 > 120 215 < 260 500 BCW30 typ. typ. 4,5 150 40 -V (V , Its Respective Manufacturer BCW29 BCW30 I This Material Copyrighted By Its Respective
-
OCR Scan
001SL2M 7Z68043

BCW30

Abstract: ScansUX40 711002b OObûSE? ETH HPHIN BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a , circuits. QUICK REFERENCE DATA D.C. current gain at Tj = 25 °C -lc = 2mA;-VCE = 5 V *FE BCW29 BCW30 > 120 , Version 1.2P This Material Copyrighted By Philips Semiconductors. 711002b 00bÃ52fl 130 BCW29 BCW30 IPHIN , Hz hFE hFE J V typ. typ. < BCW29 BCW30 BCW29 typ. 90 150 > 120 215 < 260 500 BCW30 4.5 150 10 pF MHz , Semiconductors. â  711GÃ2b 00bflS30 fl=H BIPHIN BCW29 BCW30 300 FE 200 100 10" 2 400 "VcEsot (mV) 300 200 100
-
OCR Scan
ScansUX40 ic marking ETH 200MA 7Z680

BCW29

Abstract: BCW30 DISCRETE SEMICONDUCTORS DATA SHEET BCW29; BCW30 PNP general purpose transistors Product , PNP general purpose transistors BCW29; BCW30 FEATURES PINNING · Low current (max. 100 mA , (1) TYPE NUMBER BCW29 BCW30 2 1 C1* C2* 2 Top view MAM256 Note 1. * = p , plastic surface mounted package; 3 leads SOT23 BCW30 LIMITING VALUES In accordance with the , NXP Semiconductors Product data sheet PNP general purpose transistors BCW29; BCW30 THERMAL
NXP Semiconductors
Original
R75/05/

BCW29

Abstract: sot23 1fe BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icrominiature , . max. > 120 260 32 32 200 250 150 100 BCW30 215 500 V V mA mW °C MHz 1FE ~ v CBO - v CEO - ' cm Ptot T) fT F < 10 dB Marking code BCW29 = C1p BCW30 = C2p Dimensions in mm 3.0 2.8 PE , available on request. TOP VIEW September 1994 263 BCW29 BCW30 RATINGS Lim iting values in , x 10 mm x 0.7 mm. 264 September 1994 Silico n planar epitaxial transistors BCW29 BCW30
-
OCR Scan
sot23 1fe

d0245

Abstract: BCW30 â I bb53S31 DQ545bl 4Tb HAPX N AUER PHILIPS/DISCRETE b?E ]> BCW29 BCW30 SILICON PLANAR , Ni 30° max nFE -VcBO max -VcEO max -'cm ptot BCW29 BCW30 > 120 215 < 260 500 'J fT max , BCW29 BCW30 , N AMER PHILIPS/DISCRETE b7E D- RATINGS Limiting values in accordance with the Absolute , planar epitaxial transistors N AP1ER PHILIPS/DISCRETE b7E T> D.C. current gain BCW29 BCW30 BCW29 BCW30 -ic= 10M;-VCE = 5V hFE typ. 90 150 -lC= 2mA;-VCE = 5V > 120 215 < 260 500
-
OCR Scan
d0245 332 z marking, sot-23 53S31 DQ545 D0245 S3131
Abstract: S E M IC O N D U C T O R tm BCW30 SOT-23 Mark: C2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents , Characteristics S ym bol TA = 25° C unless otherwise noted C h aracteristic M ax Units *BCW30 Pd , Semiconductor Corporation W30, Rev B BCW30 Discrete POWER & Signal Technologies FAIRCHI I D â , BCW30 PNP General Purpose Amplifier -
OCR Scan
BC857A

BCW29

Abstract: BCW30 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general , Semiconductors Product specification PNP general purpose transistors BCW29; BCW30 FEATURES PINNING , MARKING 2 MARKING CODE(1) TYPE NUMBER BCW29 C1 BCW30 1 2 C2 Top view MAM256 , general purpose transistors BCW29; BCW30 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER , current gain IC = -10 µA; VCE = -5 V BCW29 - 90 - BCW30 - 150 - 120 -
Philips Semiconductors
Original
BP317 SCA63

BCW29R

Abstract: BCW29 SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base , BCW29 hFE BCW30 hFE Transition Frequency fT Collector Capacitance CTC Noise
Zetex Semiconductors
Original
PARTMARKING MV MV SOT23 720 sot23 DSA003672
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS Pâ'"Nâ'"P transisto rs Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER , â'"Ic = 200 mA; â'"VCE = 5 V; f = 1 kHz; B = 200 Hz Continental Device India Limited BCW30 hFE , 500 Page 1 of 3 BCW29 BCW30 RATINGS (at T A = 25°C unless otherwise specified) Limiting Continental Device India
Original
C-120

BCW29R

Abstract: BCW30 SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 3 - JULY 1995_ PARTMARKING DETAILS BCW29 BCW30 BCW29R BCW30R C1 C2 C4 C5 BCW29 BCW30 COMPLEMENTARY TYPES - BCW29 BCW30 - BCW31 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage Peak Pulse Current Continuous C ollector Current Power D issipation at Tamb , -720 -810 250 VßEISAT) 'CBO -100 -10 90 120 150 215 150 7 10 500 260 nA (lA BCW29 BCW30
-
OCR Scan

BCW29

Abstract: BCW30 BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW29 = Cl BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 _3.0_ 2.8 0.48 ! 3 0.38 _1.02_ 0.89 _2.00_ 1.80 0.14 0.09 ABSOLUTE MAXIMUM RATINGS BCW29 BCW30 D.C. current gain at Tj = 25 °C -ic = 2 mA; -Vce = 5 V Collector-base , V mA mW °C MHz dB 37 BCW29 BCW30 RATINGS (at Ta = 25°C unless otherwise specified) Limiting
-
OCR Scan

BC857A

Abstract: BCW30 BCW30 C E B SOT-23 Mark: C2 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced , , Junction to Ambient Max Units *BCW30 350 2.8 357 mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. © 1997 Fairchild Semiconductor Corporation W30, Rev B BCW30 , , BW = 200 Hz BCW30 PNP General Purpose Amplifier Fairchild Semiconductor
Fairchild Semiconductor
Original
Abstract: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arkin g BCW29 = C l BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 2.8 0.14 0.48 0.38 1 3 1 I Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1 2.4 1 1 _1 . 02 _ , Ti > < BCW30 120 260 215 500 32 32 V V mA max. max. max. max, max , BCW29 BCW30 R A T IN G S (at T a = 25°C unless otherwise specified) Limiting values -
OCR Scan
D0G0750
Abstract: r z 7 SGS-THOM SON Ä T # MOeMUmOTBSfflOffiS BCW29 BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW29 BCW30 M arking C1 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR , tì 2 3 7 nnTfiaGH Û3Ô BCW29/BCW30 THERMAL DATA Rthj-amb · Thermal Resistance , -0.18 -0.72 -0.81 -0.6 -0.75 V V V V V lc = -2 mA for BCW29 lc = -10 nA l c = -2 mA for BCW30 lc = , - ^ SCS-THOilSOM I 7 * ^ 2 3 7 007Ö005 77H BCW29/BCW30 SOT-23 MECHANICAL DATA mm -
OCR Scan
BCW29/BCW30

transistors marking HJ

Abstract: marking c2 BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW 30 s s s Marking C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW , October 1997 -65 to 150 o C 150 o C 1/4 BCW30 THERMAL DATA R t hj- amb · , Transition F requency VCB = -10 V -0.75 f = 1KHz 500 150 MHz 7 dB 10 dB BCW30 , 0044616/B 3/4 BCW30 Information furnished is believed to be accurate and reliable. However
STMicroelectronics
Original
transistors marking HJ marking c2
Abstract: BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icrominiature , . max. > 120 260 32 32 200 250 150 100 BCW30 215 500 V V mA mW °C MHz 1FE ~ v CBO - v CEO - ' cm Ptot T) fT F < 10 dB Marking code BCW29 = C1p BCW30 = C2p Dimensions in mm 3.0 2.8 PE , available on request. TOP VIEW September 1994 263 BCW29 BCW30 RATINGS Lim iting values in , x 10 mm x 0.7 mm. 264 September 1994 Silico n planar epitaxial transistors BCW29 BCW30 Diotec
Original
150/C 100/C
Abstract: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base , BCW29 hFE BCW30 hFE Transition Frequency fT Collector Capacitance CTC Noise -
OCR Scan
Showing first 20 results.