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| Part Number | Manufacturer | Description | |||||
| 1. |  BCR30AM-12 |
Powerex Power Semiconductors | Triac 30 Ampere/400-600 Volts | 70.3 Kb | 4 Pg. | ||
| 2. | BCR30AM-12 |
Mitsubishi Electric Semiconductor | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | 130.21 Kb | 10 Pg. | ||
| 3. | BCR30AM-12 |
Renesas Technology / Hitachi Semiconductor | Medium Power Use Non-Insulated Type, Planar Passivation Type Triac | 163.33 Kb | 11 Pg. | ||
| 4. | BCR30AM-12 |
N/A | Power and Industrial Semiconductors Data Book | 2080.61 Kb | 78 Pg. | ||
| 5. | BCR30AM-12L |
Powerex Power Semiconductors | Triac 30 Ampere/400-600 Volts | 70.3 Kb | 4 Pg. | ||
| 6. | BCR30AM-12L |
Renesas Technology / Hitachi Semiconductor | Triac | 103.63 Kb | 7 Pg. | ||
| 7. | BCR30AM-12LB |
Renesas Technology / Hitachi Semiconductor | Thyristor, Triac for Medium Power Use | 181.47 Kb | 14 Pg. | ||
| 8. | BCR30AM-12LB-A8 |
Renesas Technology / Hitachi Semiconductor | Thyristor, Triac for Medium Power Use | 181.47 Kb | 14 Pg. |
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| 1. |  70.3 Kb • 4 Pages |
Abstract: ... °C unless otherwise specified Ratings Symbol BCR30AM-8 BCR30AM-12 Units. On-state Current, Tc = 75°C IT(RMS) 30 30 Amperes. Repetitive Peak Off-state Voltage (Gate Open) VDRM 400 600 Volts. Non ... Labels: BCR30AM-12 |
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