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BCR183WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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Part : BCR 183W H6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0163 Price Each : $0.0191
Part : BCR183WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0170 Price Each : $0.0193
Part : BCR183WE6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 90,000 Best Price : $0.02 Price Each : $0.02
Part : BCR183WH6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 33,000 Best Price : $0.04 Price Each : $0.04
Part : BCR183WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 3,000 Best Price : $0.04 Price Each : $0.04
Part : BCR183WH6327 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 8,470 Best Price : $0.0210 Price Each : $0.0379
Part : BCR183WE6327 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 18,000 Best Price : - Price Each : -
Part : BCR183WH6327 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 2,980 Best Price : - Price Each : -
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BCR183W Datasheet

Part Manufacturer Description PDF Type
BCR183W Infineon Technologies PNP Silicon Digital Transistor Original
BCR183W Infineon Technologies Single Ic = 100 mA; Package: PG-SOT323-3; Polarity: PNP; R<sub>1</sub> (typ): 10.0 kOhm; R<sub>2</sub>: 10.0 k?; h<sub>FE</sub> (min): 30.0; V<sub>i (on)</sub> (min): 1.0 2mA / 0.3V; Original
BCR183W Infineon Technologies PNP Silicon Digital Transistor Original
BCR183W Siemens PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Original
BCR183WE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 Original
BCR183WH6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS PNP 250MW SOT323-3 Original

BCR183W

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: information below · Pb-free (RoHS compliant) package · Qualified according AEC Q101 BCR183 BCR183W C 3 , B1 3 C2 EHA07173 Type BCR183 BCR183S BCR183U BCR183W Marking WMs WMs WMs WMs 1=B Pin , dissipationBCR183, TS 102°C BCR183S, TS 115°C BCR183U, TS 118°C BCR183W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR183 BCR183S BCR183U BCR183W Tj Tstg , ) BCR183W 300 mW 250 225 250 225 Ptot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 Infineon Technologies
Original
EHA07183 AN077

BCR183W

Abstract: VSO05561 BCR183W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07183 Type Marking BCR183W WMs Pin Configuration 1=B 2 , -13-2001 BCR183W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , Dec-13-2001 BCR183W DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage , Dec-13-2001 BCR183W Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150
Infineon Technologies
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VSO05561

BCR183

Abstract: BCR183F =C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B SEMB11 WM 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 , °C 250 BCR183T, TS 109C BCR183U, TS 118°C 250 BCR183W, TS 124°C 250 SEMB11, T S 75 , BCR183W 105 SEMB11 Unit K/W 300 1For calculation of R thJA please refer to Application , TS Total power dissipation Ptot = (TS) BCR183W Total power dissipation Ptot = (TS) SEMB11 , -18-2004 BCR183./SEMB11 Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR183W Ptotmax/P
Infineon Technologies
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BCR183F BCR183L3 BCR183/F/L3 BCR183T/W BCR183S/U

infineon marking code B2 SOT23

Abstract: BCR183 information below · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR183/F BCR183W , =E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 1Pb-containing Pin Configuration 2=E 3=C - , , TS 118°C 250 BCR183W, TS 124°C 250 Junction temperature Tj Storage temperature , BCR183W Unit K/W 105 1For calculation of RthJA please refer to Application Note Thermal , 2007-07-31 BCR183. Total power dissipation Ptot = (TS) BCR183W 300 mW 250 P tot 225 200
Infineon Technologies
Original
infineon marking code B2 SOT23 marking WMs transistor marking 6c1

BCR183

Abstract: BCR183F =C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 2=E 2=E 3=C 3=C 1 - - Package - , °C 250 BCR183S, T S 115°C 250 BCR183T, TS 109C 250 BCR183U, TS 118°C 250 BCR183W , BCR183W Unit K/W 105 1For calculation of R thJA please refer to Application Note Thermal , 80 120 °C 100 TS 150 TS Total power dissipation Ptot = (TS) BCR183W Permissible , Permissible Puls Load R thJS = (tp) BCR183W Permissible Pulse Load Ptotmax/P totDC = (tp) BCR185U 10
Infineon Technologies
Original

BCR183W

Abstract: VSO05561 BCR183W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07183 Type Marking BCR183W WMs Pin Configuration 1=B 2 , -20-2001 BCR183W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , -20-2001 BCR183W DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common , -20-2001 BCR183W Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150 100 50 0 0
Infineon Technologies
Original
Abstract: AEC Q101 BCR183/F BCR183W BCR183S/U C C1 B2 3 6 5 E2 4 R2 R1 R1 , BCR183U WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 1Pb-containing Pin , , T S ≤ 115°C 250 BCR183U, TS ≤ 118°C 250 BCR183W, TS ≤ 124°C 250 Junction , BCR183S ≤ 140 BCR183U ≤ 133 BCR183W Unit K/W ≤ 105 1For calculation of , 150 TS 5 2007-07-31 BCR183. Total power dissipation Ptot = Æ'(TS) BCR183W 300 mW Infineon Technologies
Original
Abstract: Q101 BCR183 BCR183W BCR183S BCR183U C C1 B2 3 6 5 E2 4 R2 R1 R1 , =B2 6=C1 SOT363 BCR183U WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 2 , BCR183W, TS ≤ 124°C 250 Junction temperature Tj Storage temperature Tstg Thermal , BCR183 ≤ 240 BCR183S ≤ 140 BCR183U ≤ 133 BCR183W Unit K/W ≤ 105 1For , dissipation P tot = Æ'(TS) BCR183U BCR183W 300 300 mW mW 225 200 200 Ptot 250 Infineon Technologies
Original
Abstract: C2 EHA07173 Type BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W SEMB11 Marking WMs , , TS 135°C BCR183S, T S 115°C BCR183T, TS 109C BCR183U, TS 118°C BCR183W, TS 124°C SEMB11, T S 75 , BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W SEMB11 1For calculation of R thJA please refer to , dissipation Ptot = (TS) BCR183W 300 Total power dissipation Ptot = (TS) SEMB11 300 mW mW Ptot , Permissible Puls Load RthJS = (tp) BCR183W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = (tp Infineon Technologies
Original
Abstract: BCR183S BCR183T BCR183U BCR183W Marking WMs WMs WM WMs WM WMs WMs 1=B 1=B 1=B 1=B 1=B Pin , 135°C BCR183S, T S 115°C BCR183T, TS 109C BCR183U, TS 118°C BCR183W, TS 124°C Junction temperature , BCR183S BCR183T BCR183U BCR183W 1For calculation of R thJA please refer to Application Note Thermal , 150 TS TS Total power dissipation Ptot = (TS) BCR183W 300 mW 250 225 Ptot 200 175 , RthJS = (tp) BCR183W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = (tp) BCR183W 10 3 10 2 Infineon Technologies
Original

infineon marking code E1 sot23

Abstract: E6327 =C1 SC74 BCR183W WMs 1=B 2=E 2=E 1 3=C 3=C - - Package - SC75 SOT323 , BCR183S, T S 115°C 250 BCR183T, TS 109C 250 BCR183U, TS 118°C 250 BCR183W, TS 124 , BCR183F 90 BCR183L3 60 BCR183S 140 BCR183T 165 BCR183U 133 BCR183W , 60 80 100 120 °C 150 TS Total power dissipation Ptot = (TS) BCR183W 300 Ptot , ) Permissible Pulse Load BCR183W Ptotmax/P totDC = (tp) BCR183W 10 3 10 3 P totmax / P totDC
Infineon Technologies
Original
infineon marking code E1 sot23 E6327 DIN 6784 DIN 6784 c1 marking 2x SOT323 WM

BC517 "cross reference"

Abstract: 2n5401 2n3904 NUMBER PHILIPS-TYPE-No. PHILIPS-TYPE-No. BCR183W PDTA114EU BCW65B BSR13 BCR191
Philips Semiconductors
Original
PMBT2369 BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference 2n2925 cross reference 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904

2sc3052ef

Abstract: 2n2222a SOT23 22 47 47 22 47 47 BCR158 BCR158W BCR162 BCR166 BCR166W BCR169 BCR169W BCR183 BCR183W
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

cdma Booster schematic

Abstract: uwb transceiver information below · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR183/F BCR183W , =E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 1Pb-containing Pin Configuration 2=E 3=C - , , TS 118°C 250 BCR183W, TS 124°C 250 Junction temperature Tj Storage temperature , BCR183W Unit K/W 105 1For calculation of RthJA please refer to Application Note Thermal , 2007-07-31 BCR183. Total power dissipation Ptot = (TS) BCR183W 300 mW 250 P tot 225 200
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

MMBD2104

Abstract: Transistor NEC 05F Q101 BCR183 BCR183W BCR183S BCR183U C C1 B2 3 6 5 E2 4 R2 R1 R1 , =B2 6=C1 SOT363 BCR183U WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 2 , BCR183W, TS ≤ 124°C 250 Junction temperature Tj Storage temperature Tstg Thermal , BCR183 ≤ 240 BCR183S ≤ 140 BCR183U ≤ 133 BCR183W Unit K/W ≤ 105 1For , dissipation P tot = Æ'(TS) BCR183U BCR183W 300 300 mW mW 225 200 200 Ptot 250
SMD Code Book
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MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d MMBD2103 BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 C2 EHA07173 Type BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W SEMB11 Marking WMs , , TS 135°C BCR183S, T S 115°C BCR183T, TS 109C BCR183U, TS 118°C BCR183W, TS 124°C SEMB11, T S 75 , BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W SEMB11 1For calculation of R thJA please refer to , dissipation Ptot = (TS) BCR183W 300 Total power dissipation Ptot = (TS) SEMB11 300 mW mW Ptot , Permissible Puls Load RthJS = (tp) BCR183W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = (tp
Infineon Technologies
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600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 B192-H6780-G11-X-7600 SP000316315 SP000262119 SP000314997 SP000013996 SP000012557

SMD Codes

Abstract: TRANSISTOR SMD T1P AEC Q101 BCR183/F BCR183W BCR183S/U C C1 B2 3 6 5 E2 4 R2 R1 R1 , BCR183U WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 BCR183W WMs 1=B 1Pb-containing Pin , , T S ≤ 115°C 250 BCR183U, TS ≤ 118°C 250 BCR183W, TS ≤ 124°C 250 Junction , BCR183S ≤ 140 BCR183U ≤ 133 BCR183W Unit K/W ≤ 105 1For calculation of , 150 TS 5 2007-07-31 BCR183. Total power dissipation Ptot = Æ'(TS) BCR183W 300 mW
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SMD Codes TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor BAV105 LL4148 LL4448 BB241 BB249 LL914
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