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Part : BCR169E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0137 Price Each : $0.0156
Part : BCR169SH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0269 Price Each : $0.0306
Part : BCR169WH6327XT Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0170 Price Each : $0.0193
Part : BCR169E6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 270,000 Best Price : $0.02 Price Each : $0.02
Part : BCR169E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 525,000 Best Price : $0.02 Price Each : $0.02
Part : BCR169S Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 2,900 Best Price : $0.02 Price Each : $0.02
Part : BCR169SH6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 24,000 Best Price : $0.05 Price Each : $0.05
Part : BCR169WE6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 54,000 Best Price : $0.02 Price Each : $0.02
Part : BCR169WH6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 81,000 Best Price : $0.04 Price Each : $0.04
Part : BCR169S E6327 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 2,042 Best Price : - Price Each : -
Part : BCR169SH6327 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 2,739 Best Price : $0.0326 Price Each : $0.0513
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BCR169/F/L3

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: matching in one multichip package BCR169/F/L3 BCR169T/W C 3 BCR169S/U C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type BCR169 BCR169F , BCR169. PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , =B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Jan-20-2005 BCR169 , voltage Collector current Total power dissipation BCR169, TS 102°C BCR169F, TS 128°C BCR169L3, TS 135 Infineon Technologies
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BCR169/F/L3 BCR169T BCR169U BCR169W

marking WSs

Abstract: matching in one multichip package BCR169/F/L3 BCR169T/W C 3 BCR169S/U C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type BCR169 BCR169F , BCR169. PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , =B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Jan-20-2005 BCR169 , voltage Collector current Total power dissipation BCR169, TS 102°C BCR169F, TS 128°C BCR169L3, TS 135
Infineon Technologies
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marking WSs

BCR169

Abstract: BCR169F isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W BCR169S BCR169U C , BCR169. PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit , E1 B1 C2 EHA07180 EHA07266 Type Marking Pin Configuration BCR169 WSs 1 , -29-2003 BCR169. Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 50 , Collector current IC 100 Total power dissipation- Ptot Unit V mA mW BCR169, TS 102
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BCR169

Abstract: BCR169F isolated transistors with good matching in one package BCR169/F/L3 BCR169T/W BCR169S/U SEMB3 C , capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 May-18-2004 BCR169./SEMB3 DC , BCR169./SEMB3 PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit , E1 B1 C2 EHA07180 EHA07266 Type Marking Pin Configuration BCR169 WSs 1 , =C - - Package - SC75 SOT323 May-18-2004 BCR169./SEMB3 Maximum Ratings
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BCR169

Abstract: BCR169F information below BCR169/F/L3 BCR169T/W BCR169S/U C C1 B2 E2 3 6 5 4 R1 R1 , BCR169. PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit , Marking Pin Configuration BCR169 WSs 1=B 2=E 3=C - - - SOT23 BCR169F , =C - - Package - SC75 SOT323 2006-05-10 BCR169. Maximum Ratings Parameter , IC Total power dissipation Ptot 100 Unit V mA mW BCR169, TS 102°C 200
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SOt323 marking code 6X

BCR108W

Abstract: BCR169 information below · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR169/F/W , BCR169. PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit , 3 E E1 B1 C2 EHA07180 EHA07266 Type Marking BCR169 WSs 1=B 2 , 1 2007-08-02 BCR169. Maximum Ratings Parameter Symbol Value Collector-emitter , 100 Unit V mA mW BCR169, TS 102°C 200 BCR169F, TS 128°C 250 BCR169S, T S 115
Infineon Technologies
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BCR108W BCW66 infineon marking code B2 SOT23 BCR169/F/W

BCR169

Abstract: ) Pulse test: t < 300 s; D < 2% 2 Dec-13-2001 BCR169 DC Current Gain hFE = f (IC , 2 3 V 5 Vi(off) 3 Dec-13-2001 BCR169 Total power dissipation Ptot = f (TS , BCR169 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , VPS05161 E EHA07180 Type Marking BCR169 WSs Pin Configuration 1=B 2=E Package , calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-13-2001 BCR169
Infineon Technologies
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Abstract: BCR169. PNP Silicon Digital Transistor â'¢ Switching circuit, inverter, interface circuit , information below â'¢ Pb-free (RoHS compliant) package â'¢ Qualified according AEC Q101 BCR169/W , 3 E E1 B1 C2 EHA07180 EHA07266 Type Marking Pin Configuration BCR169 , =E 2=E 1 3=C 3=C - - Package - SOT23 SOT323 2011-08-29 BCR169. Maximum , current IC Total power dissipation Ptot Value 100 Unit V mA mW BCR169, TS â Infineon Technologies
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BCR169/W

BCR169

Abstract: VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300 s; D < 2% 2 Jul-16-2001 BCR169 DC , -16-2001 BCR169 Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150 100 50 0 0 , BCR169 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , B E EHA07180 Type Marking BCR169 WSs Pin Configuration 1=B 2=E Package , calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-16-2001 BCR169
Infineon Technologies
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Abstract: information below â'¢ Pb-free (RoHS compliant) package 1) â'¢ Qualified according AEC Q101 BCR169/F/W , capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 2007-08-02 BCR169. DC , BCR169. PNP Silicon Digital Transistor â'¢ Switching circuit, inverter, interface circuit , 3 E E1 B1 C2 EHA07180 EHA07266 Type Marking BCR169 WSs 1=B 2 , 1 2007-08-02 BCR169. Maximum Ratings Parameter Symbol Value Collector-emitter Infineon Technologies
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Abstract: BCR169. PNP Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , Pb-free (RoHS compliant) package · Qualified according AEC Q101 BCR169/W C 3 BCR169S C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type BCR169 , SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1 2011-08-29 BCR169. Maximum Ratings , Collector current Total power dissipation BCR169, TS 102°C BCR169S, TS 115°C BCR169W, TS 124°C Junction Infineon Technologies
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AN077

BCR133

Abstract: cimax Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics (TA=25°C) j. /x FE(mln) / Case V., , , Vi(off)mai; Style 100(1. A /5 V VCEO V V ^ (o n ) ^Cimax) mA mW R2 k il k ii MHz 10mA/5V =5mA VCE =5V Lead Code 2mA/0.3V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W BCR146 BCR 148 BCR148W BCR158 BCR162 BCR166 BCR169 BCR183 BCR185
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OCR Scan
BCR553 cimax BCR108W sot323 SOT-23 BCR185W BCR191 BCR192 BCR198 BCR198W BCR503

2sc3052ef

Abstract: 2n2222a SOT23 F [dB] 3.5 2 1.3 1.8 3.0 3.0 2.0 1.3 1.5 2.5 2.7 1.8 1.8 1.9 1.9 1.9 2.0 2.0 2.1 , 6 3 3 6 6 8 8 5 5 5 8 8 f [MHz] 800 900 900 900 100 100 900 900 900 900 , 8 8 8 8 8 8 8 8 8 8 3 8 3 3 8 8 8 8 ­ ­ ­ 8 8 f [MHz] ­ 900 900 900 ­ , Maximum Ratings N = NPN P = PNP VCE0 [V] IC [mA] IC VCE [mA] [V] f Gma,Gms [MHz] [dB] IC VCE [mA] [V] Package Family f [MHz] 2 2 5 5 10 2 2 2 2 2 1800 1800 1800
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

cdma Booster schematic

Abstract: uwb transceiver Communication VCTRL 0.5 - 3.0 V VCTRL RFOUT f = 2110 MHz ­ 2170 MHz Varactor Diode: BBY58 , > Automotive VCC (2.4 V . 3.2 V) RFOUT VON f = 315 MHz ICC = 6 mA (CW-mode) POUT = 8.3 dBm @ 50 , NV memory RF - Rx Switch e.g.TDA525x Bus I/F LNA BFP460*, BFP540ESD* ­ * integrated , 3+ Generation 15 GHz 3. Generation 6 - 8 GHz 2. Generation 5 - 6 GHz BFP520(F), BFP540(F , metallization for extra high reliability BFP640, 650 BFP650 Standard BFP640/F SiGe! BFP640F For
Infineon Technologies
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cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

MMBD2104

Abstract: Transistor NEC 05F BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , C C C N C C C N N N N N N N N F N N N N N N N N N N N N N N SOT89 SOT143 SOT343 SOT23 SOT323 , Phi Phi Phi Phi Sie F N N N N N B N N F N N N N N F N N N N N N N N N N N N N R N N N N N N N N N N , Phi Phi Mot Fch Fch Zet Zet Zet Zet Phi Phi Phi Zet Zet Zet Mot Phi Phi Phi Mot Base I QQ PQ F F F F F F F F F F F F F F F F F F F C O C C F D D B B A A S S X WQ O C N M M N N N N C C C N N N N C C C F
SMD Code Book
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MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d MMBD2103 BZV49 BZV55 BAS32 BAS45 BAV105 LL4148

MMBD2103

Abstract: ZENER DIODE t2d IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , N N N N N F N N N N N N N N N N N N N N F N N N N N B N N F N N N N N F N N N N N - SOT346 SC70 , Nat Nat Nat Nat Base I QQ M PQ F F F F F F F F F F F F Package SOD323 SOT143 SOT23 SOT143 Leaded , Phi Zet Mot F F N N N F F F F F C O C C F N N N D D B B A A S S X WQ O C N N N N M M N N N N C C C N N N N C C C F N N N N N N N N N A A R N F EMT3 SC70 SC59 SOT346 SOT89 SOT23 SOT323 EMT3 SC70
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MMBD2101 MMBD2102 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 ZENER DIODE t2d 93 NDS358N LL4448 BB241 BB249 LL914 LL4150 BB219

SMD Codes

Abstract: TRANSISTOR SMD T1P IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , C C C N N C C C N N N N N N N N F N N N N N N N N N N N N N N F N N N N N B N N F N N N N N F N N N , Nat Base I QQ M PQ F F F F F F F F F F F F F F N N N F F F F Package SOD323 SOT143 SOT23 SOT143 EMT3 , Phi Phi Phi Phi Mot Mot F C O C C F N N N D D B B A A S S X WQ O C N N N N M M N N N N C C C N N N N C C C F N N N N N N N N N A A R N F N N N N N N N N N SOT346 SOT89 SOT23 SOT323 EMT3 SC70 SC59
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TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor Transistor SMD a7s LL300 BA682 BA683 BA423L LL600 LL3595

smd code book

Abstract: transistor SMD P1f SOT23 SOT23 SOT23 Roh N Roh N Roh N Phi Phi Phi Phi Sil Sil N N F F J J SGS R Roh N Roh N DO Roh N , Phi Phi Rho Rho Vis Phi Phi Phi Nat CX I I X C A C O F X DP N N F N A C C O DP N N I N F N K SOD523 , Rho Phi Sie Sie A D C O N N N N C C DP F D A A UQ C O D D DQ N N DP N D B B B N N N DP N SOT346 , N N N F N N N N N N N N N N N N N N F N N N N N B N N F N N N N N F SOT323 SOT23 SOT23 SOT23 , QQ M PQ F F F F F F F F F F F F F F I I N N N I F F F F EMD2 VMD2 EMT3 SC70 SC59 SOD323 varicap
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smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 DIODE SMD L4W 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 & reel Wired Communication Core Access HDLC Controller PEB 20525 F V1.3 SP000307369 PG-TQFP-100-3 PEB 20525 F V1.3 SP000007591 PG-TQFP-100-3 PEF 20525 F V1.3 SP000225720 PG-TQFP-100-3 PEF 20525 F V1.3 SP000007592 PG-TQFP-100-3 SEROCCOTM-H: Two channel serial , Mbit/s, -40° C to 85° C, tray PEB 20532 F V1.3 SP000007512 PG-TQFP-100-3 PEF 20532 F V1 , each channel up to 12.5 Mbit/s, -40° C to 85° C, tray PEB 20542 F V1.3 SP000007633 PG-TQFP
Infineon Technologies
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600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 B192-H6780-G11-X-7600 SP000316315 SP000262119 SP000314997 SP000013996 SP000012557

transistor SMD s72

Abstract: nec mys 501 H* () 1.2 1.6 1.2 1.9 1.2 1.5 3.1 2.5 2.8 4.3 2.3 2.3 2.4 2.95 2.3 2.3 2.3 2.5 2.8 F () 1.1 , 1.52 2.05 F* () 0.48 0.48 0.42 0.2 0.3 0.6 0.5 0.3 0.3 0.3 S* () 0.03 0.03 0.05 0.07 0.15 0.1 , = ±0.05 B = ±0.1 C = ±0.25 D = ±0.5 F = ±1 G = ±2 ­ R (E) = 1 K (K) = 103 M (M) = 106 G () = , : 1-7 2 3.6 ± 5% 2 1980 . PANASONIC B = ±0.1% C = ±0.25% D = ±0.5% F = ±1.0% , =103; E=104; F=105. -96, 1%, 0603. 10C = 124 x 102 = 12.4 01 02 03 04 05 06 07 08 09 10 11
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transistor SMD s72 nec mys 501 MYS 99 st MYS 99 102 transistor 8BB smd kvp 81A BC818W MUN5131T1 SMBT3904 MVN5131T1 DO215
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