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BCR116SH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SOT-363, 6 PIN visit Digikey Buy
BCR116E6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, visit Digikey Buy
BCR116E6433HTMA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
BCR116WH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN visit Digikey Buy
BCR116E6393HTSA1 Infineon Technologies AG TRANS PREBIAS NPN SOT23 visit Digikey Buy

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Part : BCR 116 E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 3,000 Best Price : $0.0150 Price Each : $0.1080
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Part : BCR 116S H6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0259 Price Each : $0.0303
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Part : BCR116SH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 18,000 Best Price : $0.0269 Price Each : $0.0306
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Part : BCR116E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.0186 Price Each : $0.0213
Part : BCR116SH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.0308 Price Each : $0.0330
Part : BCR116SE6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 20,417 Best Price : $0.04 Price Each : $0.04
Part : BCR116SH6327XTSA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 57,650 Best Price : £0.0220 Price Each : £0.0220
Part : BCR116SH6327XTSA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 2,650 Best Price : £0.0220 Price Each : £0.0220
Part : BCR116WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 1,200 Best Price : £0.0170 Price Each : £0.0260
Part : BCR116WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 500 Best Price : £0.0170 Price Each : £0.0170
Part : BCR116WH6327 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 933 Best Price : $0.0209 Price Each : $0.0374
Part : BCR116E6327 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 9,820 Best Price : - Price Each : -
Part : BCR116E6433 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 12,913 Best Price : - Price Each : -
Part : BCR116SE6327 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 3,420 Best Price : - Price Each : -
Part : BCR116-221JT Supplier : TT Electronics Manufacturer : New Advantage Stock : 4,849 Best Price : $0.03 Price Each : $0.03
Part : BCR116E6327 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 1,250 Best Price : $0.03 Price Each : $0.04
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BCR116 Datasheet

Part Manufacturer Description PDF Type
BCR116 Infineon Technologies NPN Silicon Digital Transistor Original
BCR116 Infineon Technologies R1=4.7k ? R2=47k ? Original
BCR116 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 Original
BCR116 Infineon Technologies Single Ic = 100 mA; Package: PG-SOT23-3; Polarity: NPN; R<sub>1</sub> (typ): 4.7 kOhm; R<sub>2</sub>: 47.0 k?; h<sub>FE</sub> (min): 70.0; V<sub>i (on)</sub> (min): 0.5 2mA / 0.3V; Original
BCR116 Infineon Technologies NPN Silicon Digital Transistor Original
BCR116 Siemens NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) Original
BCR116 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BCR116E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original
BCR116E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 Original
BCR 116E6433 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3SOT-23 T/R Original
BCR116E6433 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 200MW SOT23-3 Original
BCR116F Infineon Technologies NPN Silicon Digital Transistor Original
BCR116FE6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSFP-3 T/R Original
BCR116FE6327 Infineon Technologies Digital Transistors - R1= 4,7 kOhm , R2= 47 kOhm Original
BCR116FE6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSFP-3 Original
BCR116L3 Infineon Technologies NPN Silicon Digital Transistor Original
BCR116L3E6327 Infineon Technologies TRANS DIGITAL BJT NPN 50V 100MA 3TSLP-3-4 T/R Original
BCR116L3E6327 Infineon Technologies Digital Transistors - R1= 4,7 kOhm , R2= 47 kOhm Original
BCR116L3E6327 Infineon Technologies Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 250MW TSLP-3 Original
BCR116S Infineon Technologies NPN Silicon Digital Transistor Array Original
Showing first 20 results.

BCR116

Catalog Datasheet MFG & Type PDF Document Tags

BCR116

Abstract: BCR116 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR116 WGs Pin Configuration 1=B 2 , -16-2001 BCR116 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Jul-16-2001 BCR116 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage , Jul-16-2001 BCR116 Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150
Infineon Technologies
Original
VPS05161

transistor marking code wgs

Abstract: wgs SOT-23 B1 3 C2 EHA07174 Type BCR116 BCR116F BCR116S BCR116W Marking WGs WGs WGs WGs 1=B 1=B 1 , Parameter Junction - soldering point1) BCR116 BCR116F BCR116S BCR116W 1For Symbol VCEO VCBO Vi(fwd) Vi , BCR116. Permissible Puls Load RthJS = (tp) BCR116S 10 3 K/W Permissible Pulse Load Ptotmax/P , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR116/F BCR116W C 3
Infineon Technologies
Original
transistor marking code wgs wgs SOT-23 BCR116/F 726-BCR116SE6727 E6727

WGs SOT323

Abstract: BCR116 °C -65 . 150 Value BCR116 240 BCR116F 90 BCR116L3 60 BCR116S 140 , isolated transistors with good matching in one package BCR116/F/L3 BCR116T/W BCR116S C C1 , °C 200 BCR116F, TS 128°C 250 BCR116L3, TS 135°C 250 BCR116S, T S 115°C 250 , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit , TSFP-3 BCR116L3 WG 1=B 2=E 3=C - - - TSLP-3-4 BCR116S WGs 1=E1 2
Infineon Technologies
Original
WGs SOT323 BCR116/F/L3 BCR116T/W
Abstract: BCR116 BCR116W BCR116S C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 , mW BCR116, TS ≤ 102°C 200 BCR116S, TS ≤ 115°C 250 BCR116W, TS ≤ 124°C 250 , BCR116. NPN Silicon Digital Transistor â'¢ Switching circuit, inverter, interface circuit , Pin Configuration BCR116 WGs 1=B BCR116S WGs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 , BCR116. Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Infineon Technologies
Original

transistor marking code wgs

Abstract: marking WGs sot23 · Pb-free (RoHS compliant) package · Qualified according AEC Q101 BCR116 BCR116W C 3 BCR116S , C2 EHA07174 Type BCR116 BCR116S BCR116W Marking WGs WGs WGs 1=B 1=B Pin Configuration 2=E 2 , soldering point1) BCR116 BCR116S BCR116W Tj Tstg Symbol RthJS Symbol VCEO VCBO Vi(fwd) Vi(rev) IC Ptot 200 , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit, driver , BCR116. Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward
Infineon Technologies
Original
marking WGs sot23 infineon marking code B1 SOT23 AN077

BCR116L3

Abstract: BCR116S BCR116F 90 BCR116L3 60 BCR116S 140 BCR116T 165 BCR116W Unit K/W 105 , information below BCR116/F/L3 BCR116T/W BCR116S C C1 B2 3 6 5 E2 4 R2 R1 R1 , Value 100 Unit V mA mW BCR116, TS 102°C 200 BCR116F, TS 128°C 250 BCR116L3, TS 135°C 250 BCR116S, T S 115°C 250 BCR116T, TS 109°C 250 BCR116W, TS 124 , BCR116. Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR116S Ptotmax/P totDC =
Infineon Technologies
Original

BCR116

Abstract: wgs t 240 BCR116F 90 BCR116L3 60 BCR116S 140 BCR116T 165 BCR116W 105 , isolated transistors with good matching in one package BCR116/F/L3 BCR116T/W BCR116S SEMH13 C , Unit V mA mW BCR116, TS 102°C 200 BCR116F, TS 128°C 250 BCR116L3, TS 135°C 250 BCR116S, T S 115°C 250 BCR116T, TS 109°C 250 BCR116W, TS 124°C 250 SEMH13 , -17-2004 BCR116./SEMH13 Permissible Puls Load RthJS = (tp) Permissible Pulse Load BCR116L3 Ptotmax/P
Infineon Technologies
Original
wgs t

marking WGs sot23

Abstract: transistor marking code wgs BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W Marking WGs WGs WG WGs WGs WGs 1=B 1=B 1=B 1=B 1 , Parameter Junction - soldering point 1) BCR116 BCR116F BCR116L3 BCR116S BCR116T BCR116W 1For calculation of , good matching in one multichip package BCR116/F/L3 BCR116T/W C 3 BCR116S C1 6 B2 5 E2 4 , current Total power dissipationBCR116, TS 102°C BCR116F, TS 128°C BCR116L3, TS 135°C BCR116S, T S 115 , -03-2005 BCR116. Total power dissipation Ptot = (TS) BCR116 300 Total power dissipation Ptot = (TS) BCR116F
Infineon Technologies
Original

marking WGs sot23

Abstract: infineon marking code B2 SOT23 -65 . 150 Value BCR116 240 BCR116F 90 BCR116S 140 BCR116W Unit K/W , - Ptot 100 Unit V mA mW BCR116, TS 102°C 200 BCR116F, TS 128°C 250 BCR116S, T , BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit , information below · Pb-free (RoHS compliant) package 1) · Qualified according AEC Q101 BCR116/F BCR116W , Configuration BCR116 WGs 1=B 2=E 3=C - - - SOT23 BCR116F WGs 1=B 2=E 3
Infineon Technologies
Original
infineon marking code B2 SOT23 SOt323 marking code 6X marking code R2 sot23 BCR108T SC75 transistor marking code
Abstract: EHA07174 Type Marking Pin Configuration Package BCR116 BCR116F BCR116L3 BCR116S BCR116T , Value 240 90 60 140 165 105 300 °C Unit K/W BCR116 BCR116F BCR116L3 BCR116S BCR116T , 128°C BCR116L3, TS 135°C BCR116S, T S 115°C BCR116T, TS 109°C BCR116W, TS 124°C SEMH13, TS 75 , isolated transistors with good matching in one package BCR116/F/L3 BCR116T/W C 3 BCR116S SEMH13 C1 , -17-2004 BCR116./SEMH13 Total power dissipation Ptot = (TS) BCR116T 300 Total power dissipation Ptot = (TS Infineon Technologies
Original

BCR116

Abstract: EHA07184 BCR116 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit , R2 1 2 B E EHA07184 Type Marking BCR116 WGs Pin Configuration 1=B 2 , -29-2001 BCR116 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values , % 2 Nov-29-2001 BCR116 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage , Nov-29-2001 BCR116 Total power dissipation Ptot = f (TS ) 300 Ptot mW 200 150
Infineon Technologies
Original

BCR133

Abstract: cimax Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics (TA=25°C) j. /x FE(mln) / Case V., , , Vi(off)mai; Style 100(1. A /5 V VCEO V V ^ (o n ) ^Cimax) mA mW R2 k il k ii MHz 10mA/5V =5mA VCE =5V Lead Code 2mA/0.3V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W BCR146 BCR 148 BCR148W BCR158 BCR162 BCR166 BCR169 BCR183 BCR185
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OCR Scan
BCR553 cimax BCR108W sot323 SOT-23 BCR185W BCR191 BCR192 BCR198 BCR198W BCR503

BC517 "cross reference"

Abstract: 2n5401 2n3904 BC850B BCR116 PDTC143ZT BC850CLT1 BC850C BCR119 PDTC143TT BC856.860 BC856
Philips Semiconductors
Original
PMBT2369 BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference 2n2925 cross reference 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904

2sc3052ef

Abstract: 2n2222a SOT23 BCR108 BCR108W BCR112 BCR112W BCR116 BCR116W BCR119 BCR119W BCR129 BCR129W BCR133 BCR133W , SOT363 SOT363 SOT363 SOT363 SOT363 BCR108S BCR116S BCR119S BCR129S BCR133S BCR135S BCR141S
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 BCR116. NPN Silicon Digital Transistor · Switching circuit, inverter, interface circuit , information below BCR116/F/L3 BCR116T/W BCR116S C C1 B2 3 6 5 E2 4 R2 R1 R1 , Type Marking Pin Configuration BCR116 WGs 1=B 2=E 3=C - - - SOT23 , 1 Package 2006-05-04 BCR116. Maximum Ratings Parameter Symbol Collector-emitter , Value 100 Unit V mA mW BCR116, TS 102°C 200 BCR116F, TS 128°C 250 BCR116L3
Infineon Technologies
Original
600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 B192-H6780-G11-X-7600 SP000316315 SP000262119 SP000314997 SP000013996 SP000012557

TLE4957C

Abstract: SLE66R35E7 Transistors For complete package outlines, refer to pages PO-1 through PO-6 Bias Resistor Transistors Type Maximum Ratings Characteristics (TA=25°C) j. /x FE(mln) / Case V., , , Vi(off)mai; Style 100(1. A /5 V VCEO V V ^ (o n ) ^Cimax) mA mW R2 k il k ii MHz 10mA/5V =5mA VCE =5V Lead Code 2mA/0.3V BCR108 BCR108W BCR112 BCR116 BCR119 BCR133 BCR133W BCR135 BCR135W BCR141 BCR142 BCR142W BCR146 BCR 148 BCR148W BCR158 BCR162 BCR166 BCR169 BCR183 BCR185
Infineon Technologies
Original
TLE4957C SLE66R35E7 SAK-XC2060M-104F80L AA TLE5041 PG-DSOSP-14 BGM1043

cdma Booster schematic

Abstract: uwb transceiver BCR108 BCR108W BCR112 BCR112W BCR116 BCR116W BCR119 BCR119W BCR129 BCR129W BCR133 BCR133W
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

MMBD2104

Abstract: Transistor NEC 05F BC850B BCR116 PDTC143ZT BC850CLT1 BC850C BCR119 PDTC143TT BC856.860 BC856
SMD Code Book
Original
MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d MMBD2103 BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45
Showing first 20 results.