BCR08AS-12 REJ03G0292-0100 BCR08AS-12A BCR08AS-12A-T13 D-85622 - Datasheet Archive

 

Triac Low Power Use REJ03G0292-0100 Rev.1.00 Aug.20.2004 Features · · · · · Non-Insulated Type

 

BCR08AS-12 BCR08AS-12 Triac Low Power Use REJ03G0292-0100 REJ03G0292-0100 Rev.1.00 Aug.20.2004 Features · · · · · Non-Insulated Type · Planar Passivation Type IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.1.00, Aug.20.2004, page 1 of 6 Symbol Voltage class 12 (Mark BF) Unit VDRM VDSM 600 720 V V BCR08AS-12 BCR08AS-12 Parameter RMS on-state current Symbol IT (RMS) Ratings 0.8 Unit A Surge on-state current ITSM 8 A I2 t 0.26 A2s PGM PG (AV) VGM IGM Tj Tstg - 1 0.1 10 1 ­ 40 to +125 ­ 40 to +125 48 W W V A °C °C mg Symbol IDRM VTM Min. - - Typ. - - Max. 2.0 2.0 Unit mA V Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement VFGT VRGT VRGT VFGT IFGT IRGT IRGT IFGT VGD Rth (j-a) (dv/dt)c - - - - - - - - 0.1 - 0.5 - - - - - - - - - - - 2.0 2.0 2.0 2.0 5 5 5 10 - 65 - V V V V mA mA mA mA V °C/W V/µs Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Conditions Commercial frequency, sine full wave 360° conduction, Ta = 40°CNote3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 V V Tj = 25°C, VD = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage Tj = 125°C, VD = 1/2 VDRM Thermal resistance Junction to ambientNote3 Critical-rate of rise of off-state Tj = 125°C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm). 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = ­ 0.4 A/ms 3. Peak off-state voltage VD = 400 V Rev.1.00, Aug.20.2004, page 2 of 6 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR08AS-12 BCR08AS-12 Performance Curves 101 7 5 4 3 2 10 Tj = 125°C 100 7 5 4 3 2 10­1 Rated Surge On-State Current Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics Tj = 25°C 0 1 2 3 4 8 6 4 2 0 100 5 2 3 4 5 7 101 2 3 4 5 7 102 101 7 5 3 2 100 7 5 3 2 Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 1W PG(AV) = 0.1W VGT IFGT I, IRGT I, IRGT III IGM = 1A IFGT III VGD = 0.2V 10­1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 102 7 5 3 2 Conduction Time (Cycles at 60Hz) Gate Characteristics Gate Voltage (V) On-State Voltage (V) 103 7 5 4 3 2 Typical Example IFGT III IFGT I, IRGT III, IRGT I 102 7 5 4 3 2 101 ­60 ­40 ­20 0 20 40 60 80 100 120 140 Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 Junction Temperature (°C) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Typical Example VFGT I VFGT III VRGT I VRGT III 101 ­60 ­40 ­20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 3 of 6 Transient Thermal Impedance (°C/W) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Current (mA) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 * 25mm×25mm×t0.7mm 5 Ceramic plate 3 2 102 7 5 3 2 Junction to ambient * 101 7 5 3 2 100 10­1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR08AS-12 BCR08AS-12 Allowable Ambient Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 1.6 1.2 0.8 0.4 0 360° Conduction Resistive, inductive loads 0 0.4 0.8 1.2 1.6 Ambient Temperature (°C) On-State Power Dissipation (W) 2.0 25mm×25mm×t0.7mm 140 Ceramic plate 120 80 60 40 20 0 2.0 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 ­60 ­40 ­20 0 20 40 60 80 100 120 140 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) RMS On-State Current (A) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 ­60 ­40 ­20 0 20 40 60 80 100 120 140 Breakover Voltage vs. Junction Temperature Distribution T2+, G­ Typical Example 101 7 5 3 2 100 7 5 3 T2+, G+ 2 T2­, G­ Typical Example T2­, G+ 10­1 0 40 80 ­40 120 Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 4 of 6 160 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 102 7 5 3 2 Junction Temperature (°C) Latching Current vs. Junction Temperature Latching Current (mA) Junction Temperature (°C) 160 Typical Example 140 120 100 80 60 40 20 0 ­60 ­40 ­20 0 20 40 60 80 100120 140 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 101 160 Typical Example Tj = 125°C 140 120 I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) BCR08AS-12 BCR08AS-12 3 2 100 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 Typical Example Minimum 10­1 10­1 2 3 I Quadrant 5 7 100 6 5 7 101 6 A A 6V 330 330 V Test Procedure I Test Procedure II 6 6 A 6V 2 3 4 5 7 102 Gate Current Pulse Width (µs) Rev.1.00, Aug.20.2004, page 5 of 6 3 Gate Trigger Characteristics Test Circuits V 2 3 4 5 7 101 2 Rate of Decay of On-State Commutating Current (A/ms) 6V 102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 III Quadrant 3 Characteristics 2 Value Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Typical Example Tj = 125°C IT = 1A = 500µs VD = 200V 7 5 V 330 Test Procedure III A 6V V 330 Test Procedure IV BCR08AS-12 BCR08AS-12 Package Dimensions SOT-89 EIAJ Package Code Conforms Mass (g) (reference value) Lead Material 0.048 JEDEC Code Cu alloy 4.4 ± 0.1 1.6 ± 0.2 3.9 ± 0.3 0.8 min 2.5 ± 0.1 1.5 ± 0.1 0.5 ± 0.1 1.5 ± 0.1 0.4 ± 0.05 0.4 ± 0.1 3.0 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Surface-mounted type Stick 25 Type name +A Surface-mounted type Taping 3000 Type name +A ­T +Direction (1 or 2)+3 Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example BCR08AS-12A BCR08AS-12A BCR08AS-12A-T13 BCR08AS-12A-T13 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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