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BC860B,235 Nexperia BC859; BC860 - PNP general purpose transistors TO-236 3-Pin visit Digikey
BC860C,215 Nexperia BC859; BC860 - PNP general purpose transistors TO-236 3-Pin visit Digikey
BC860B,215 Nexperia BC859; BC860 - PNP general purpose transistors TO-236 3-Pin visit Digikey
BC860C,235 Nexperia BC859; BC860 - PNP general purpose transistors TO-236 3-Pin visit Digikey
BC860BE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey
BC860BW,135 Nexperia BC859W; BC860W - PNP general purpose transistors SC-70 3-Pin visit Digikey

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Part : SBC8600 WITH 4.3"LCD Supplier : Embest Manufacturer : Newark element14 Stock : 2 Best Price : $235.31 Price Each : $235.31
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BC860 Datasheet

Part Manufacturer Description PDF Type
BC860 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC860 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BC860 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BC860 Infineon Technologies NPN Silicon AF Transistors Original
BC860 Kexin PNP General Purpose Transistor Original
BC860 Korea Electronics General Purpose Transistor Original
BC860 Philips Semiconductors PNP general purpose transistors Original
BC860 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC860 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC860 Rectron Semiconductor PNP Transistor Original
BC860 Siemens Cross Reference Guide 1998 Original
BC860 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC860 Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original
BC860 TY Semiconductor PNP General Purpose Transistor - SOT-23 Original
BC860 Zetex Semiconductors SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS Original
BC860 Zetex Semiconductors SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS Original
BC860 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BC860 Continental Device India Silicon Planar Epitaxial Transistor Scan
BC860 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BC860 Korea Electronics General Purpose Transistor Scan
Showing first 20 results.

BC860

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features · Switching and Amplifier , , BC860 · Complement to BC846 . BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute , = -200uA RG=2K, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor , -23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT-23 Tape & Reel Fairchild Semiconductor
Original
BC856 PNP Epitaxial Silicon Transistor sot-23 BC857CMTF BC857BMTF marking 25 SOT-23 ref IC BC859BMTF BC857AMTF BC857/860 BC858/859
Abstract: ITT SEMICON»/ INTERHETALL 5ÃE J> m Mbö5711 0D02.5T4 b^O «ISI T-2PI-I5 BC856 . . . BC860 , , the types BC857, BC858, BC859 and BC860 can be supplied in all three groups. The BC859 is a low noise type and the BC860 a extremely low noise type. As complementary types the NPN transistors BC846 . . . , 3K C 3L Type Marking BC859A 4 A B 4B C 4C BC860A 4E B 4 F C 4G Absolute Maximum Ratings Symbol Value Unit Collector Base Voltage BC856 â'"VcBO 80 V BC857, BC860 â'"VcBO 50 V BC858, BC859 -
OCR Scan
BC856AR BC856A Q002 BC860 equivalent BC857A BC858A Q002S
Abstract: package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors , V; see Figs 2 and 3 220 - 475 420 - 800 BC859B; BC860B BC859C; BC860C , - 4 dB BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B; BC859C; BC860C , ; BC860B. Fig.2 DC current gain; typical values. MBH728 600 handbook, full pagewidth hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 BC859C; BC860C. NXP Semiconductors
Original
BC849 bc860 nxp MAM256 R75/05/
Abstract: TYPE NUMBER 2 MARKING CODE BC859 4Dp BC860 4Ap BC860A 4Bp BC860B 4Fp , - - 4 dB BC859A; BC860A BC859B; BC860B BC859C; BC860C F noise figure BC859A; BC860A IC = -200 uA; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200 Hz BC859B; BC860B BC859C; BC860C , -5 V; see Figs 2, 3 and 4 125 - 250 BC859B; BC860B 220 - 475 BC859C; BC860C , hFE 200 VCE = -5 V 100 0 -10-1 -1 -102 -10 IC (mA) -103 BC859A; BC860A. Philips Semiconductors
Original
BC859B 215 4cp 44 301 marking code PNP transistor M3D088 SCA54
Abstract: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE , BC860 50 45 200 250 150 125 900 100 100 1,2 4 4 1 3 4 V V mA mW °C MHz dB dB dB BC859 BC860 RATINGS (at T a = 25°C unless otherwise specified) Limiting values , max. max. max. max. max. max. max. max. max. max. BC859 30 30 30 5 BC860 50 V 50 -
OCR Scan
Abstract: -23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G , > 100 100 MHz F typ. < < 1,2 4 4 1 3 4 dB dB dB F Data Sheet BC860 max. max. max. max. max. > < Page 1 of 3 BC859 BC860 RATINGS (at TA = 25°C unless , . max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250 Continental Device India
Original
BC859 smd C-120
Abstract: |B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 = 4Hp BC860A = 4Ep BC860B = 4Fp BC860C = 4Gp 1.U 2.5 1.2 max Pinning: 1 = base 2 = emitter 3 = collector â'"ffrl0.1(g , /DISCRETE b?E D' 500 hFE 400 BC859 BC860 BCB59C BC860C , ï»¿â  bhS3n31 â¡ GE447lì 755 BIAPX N AUER PHILIPS/DISCRETE b?E J> BC859 BC860 SILICON PLANAR , hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ Vgg = 1 V) ~VCEX -
OCR Scan
BCB60 G-024 BCB59 philips hq GE447 S3T31 G024M63
Abstract: < Dimensions in mm MHz Marking code: Fig. 1 SOT-23. BC859 BC859A BC859B BC859C BC860 BC860A BC860B BC860C 0.150 = 4Dp = 4Ap = 4Bp = 4Cp = 4Hp = 4Ep = 4Fp = 4Gp Pinning: 1 = base , â  bbsanai o q e h m ?^ ? s s « a p x N ANER PHILIPS/DISCRETE BC859 BC860 b?E V y , equipment in thick and thin-film hybrid circuits. QUICK REFERENCE DATA BC859 BC860 30 50 V V , BC860 N AMER PHILIPS/DISCRETE - A b7E -
OCR Scan
4gp transistor QQ24463
Abstract: 1.9 0.95 max 0AB -0.1 0.2©1A|B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 = 4Hp BC860A = 4Ep BC860B = 4Fp BC860C = 4Gp 1.4 2.5 1.2 max Pinning: 1 = base 2 = emitter 3 = , 711GÃ2b 00bfi445 33e! HPHIN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in , BC859 BC860 Collector-emitter voltage (+ Vre = 1 v) ~VCEX max. 30 50 V Collector-emitter voltage (open , Copyrighted By Philips Semiconductors. â  7110fl2b BC859 BC860 OObflMMt. 275 â PHIN JL RATINGS Limiting -
OCR Scan
33E marking marking TN4 7Z96885 7Z60I33
Abstract: BC859CZ4C BC859 BC849 BC857C3G BC860AZ4E BC860 BC850 BC858A3J BC860B4F BC858B3K E C BC860C4GZ B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC856 BC857 , SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL , and Storage Temperature Range BC858 BC859 BC860 -30 -30 -30 -30 -30 -30 -5 -100 , . VBE(sat) Typ BC856 BC857 BC858 BC859 BC860 -15 -4 -75 -75 -300 -300 VBE Min Typ Max Zetex Semiconductors
Original
BC848 equivalent DSA003670 BC858C BC858B BC857C BC857B3 BC856A3A BC858C3L BC856BZ3B BC859AZ4A BC847 BC857AZ3E
Abstract: current gain DC current gain BC859; BC860 BC859A; B C 860A BC859B; BC860B BC859C ; BC860C VcEsat collecto , NUMBER BC860 B C 860A BC860B B08600 MARKING CODE 4H p 4E p 4Fp 4G p QUICK REFERENCE DATA SYMBOL , , BC860B B C 859C ; BC860C lE = ie = 0 , V CB = - 1 0 V , f = 1 MHz lc = ic = 0 ; V EB = -5 0 0 mV; f = , ; BC860B B C 859C ; BC860C lc = -2 0 0 \iA; V c e = - 5 V; Rs = 2 k ft; f = 1 kHz; B = 200 Hz - - , DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification -
OCR Scan
transistor BC 339 marking code 4D low noise transistor bc 234 transistor BC 536 l43 transistor marking 4d npn B0859A SCA60
Abstract: ) BC859B 4B* BC860B 4F* BC859C 4C* BC860C 2 - 2 1 4G* Top V ie w , ; lB = - 5 mA; note 1 VcEsat BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B , Philips Semiconductors Product specification PNP general purpose transistors BC859; BC860 , BC859 -3 0 V BC860 - -5 0 V BC859 - -3 0 V BC860 VcEO - - , Philips S em iconductors P roduct specification PNP general purpose transistors BC859; BC860 -
OCR Scan
Abstract: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features â'¢ Switching and Amplifier , : BC859, BC860 â'¢ Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3 , = -200ÂuA RG=2Kâ"¦, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , Corporation BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon , .Collector BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT Fairchild Semiconductor
Original
MV TRANSISTOR SOT23
Abstract: BC859B-4B BC859C-Z4C BC860A-Z4E BC860B-4F BC860C-4GZ C O M PLEM EN TAR Y TYPES BC856 BC857 BC858 BC859 BC860 BC846 BC847 BC848 BC849 BC850 BC856 BC858 BC860 BC857 BC859 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L V CBO V CES V CEO V EBO 'c 'e m 'b m 'em BC856 BC857 BC858 BC859 BC860 Collector-Base , BC856 BC857 BC858 -15 BC859 BC860 Max Max UNIT CONDITIONS. nA V c b =-30V (iA -4 , through the operating point lc = 11mA, VCE= 1V at constant base current. BC856 BC858 BC860 PARAMETER -
OCR Scan
BC856A-3A BC856B-Z3B BC857A-Z3E BC857B-3F BC857C-3G BC858A-3J
Abstract: BC856 BC858 BC860 S 0 T 2 3 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC857 BC859 , r V o lta g e BC856 BC857 BC858 B C 8 5 9 BC860 UNIT v CBO -8 0 -5 0 -3 0 -3 0 , urrent 'cBO BC856 BC857 BC858 BC859 BC860 UNIT V BE -1 5 -4 -1 5 -4 -1 5 -4 mA , 0 0 0 6 1 ^ 7 732 â  DS23 CHARACTERISTICS (cont.) N BC856 BC857 BC858 BC859 BC860 , hoe D G D a n fl BC856 BC858 BC860 BC857 BC859 CHARACTERISTICS (at Tamb = 2 5 ° C -
OCR Scan
Abstract: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS Type Marking BC857A 3E BC857B 3F BC858A 4E BC860B s 4B BC860A s 4A BC859B s 3K BC859A s , MAXIMUM RATINGS Symbol Parameter Value Uni t BC857/BC860 V CES Collector-Emitter Voltage , /BC859/BC860 THERMAL DATA R t hj-amb · R th j-SR · Thermal Resistance Junction-Ambient Thermal , Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 uA for BC857/BC860 for BC858/BC859 -50 -30 V STMicroelectronics
Original
374C tbc857 BC859/BC860 BC857/BC860 BC857/BC858/BC859/BC860 0044616/B
Abstract: . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications , however, the types BC857, BC858, BC859 and BC860 can be supplied in all three groups. The BC859 is a low noise type and the BC860 a extremely low noise type. As complementary types the NPN transistors BC846 . , 3A 3B 3E 3F 3G 3J 3K 3L Marking code Type BC859A B C BC860A B C Marking 4A 4B 4C 4E 4F 4G Absolute Maximum Ratings Symbol Collector Base Voltage BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860 -
OCR Scan
marking 4A MARKING CODE 3J
Abstract: r r z SGS-THOM SON Ä T f M lioe m s e îli» !» BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B BC859A BC859B BC860A BC860B M arking 3E 3F 3J 3K 4A 4B 4E 4F , ebo Parameter BC857/BC860 Collector-Emitter Voltage ( V b e = 0) Collector-Base Voltage (Ie = 0 , 7 ^2^ 237 D77c H l4 ETD BC857/BC858/BC859/BC860 THERMAL DATA Rthj-amb · Rthj-SR · Thermal , = -30 V VCE = -30 V Tamb = 150 °C V(BR)CES* lc = -10 H-A fo r BC857/BC860 fo r BC858 -
OCR Scan
Abstract: package; 3 leads BC859C BC860B BC860C 2004 Jan 16 2 VERSION SOT23 Philips , ; BC860B BC859C; BC860C collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - -75 , ; B = 200 Hz - - 4 dB BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B , (mA) -103 BC859B; BC860B. Fig.2 DC current gain; typical values. MBH728 600 handbook , BC859C; BC860C. Fig.3 DC current gain; typical values. 2004 Jan 16 5 -102 IC (mA) -103 Philips Semiconductors
Original
SCA76
Abstract: NUMBER BC859 BC859A BC859B BC859C MARKING CODE 4Dp 4Ap 4Bp 4Cp TYPE NUMBER BC860 BC860A BC860B , current gain DC current gain BC859A; BC860A BC859B: BC860B BC859C; BC860C CONDITIONS |E = 0; VCB = -3 , Hz - - 4 F noise figure BC859A; BC860A BC859B; BC860B BC859C; BC860C 10 4 . . dB , specification PNP general purpose transistors BC859; BC860 BC859A; BC860A. Fig.2 DC current gain , ; BC860 BC85SC; BC860C. Fig.4 DC current gain; typical values. 1997 May 26 353 -
OCR Scan
marking 4Gp PHILIPS marking Code 5C BH727
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product , PNP general purpose transistors BC859; BC860 FEATURES PINNING · Low current (max. 100 mA , Product data sheet PNP general purpose transistors BC859; BC860 LIMITING VALUES In accordance , BC860 - -45 V BC859 BC860 VCEO collector-emitter voltage open base VEBO , BC859; BC860 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL collector cut-off Siemens
Original
Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1727 Q62702-C1713 C1507 b 857 sot-23 marking 3Fs sot-23 marking 1Fs 1Bs sot-23 Q62702-C1772 Q62702-C1746 Q62702-C1884
Abstract: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features · Switching and Amplifier , , BC860 · Complement to BC846 . BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute , = -200uA RG=2K, f=1KHz Units nA -700 -900 VBE (on) Max. -15 ICBO : BC859 : BC860 , BC856- BC860 Rev. B 1 www.fairchildsemi.com BC856- BC860 PNP Epitaxial Silicon Transistor , "-TF" means the tape & reel type packing. 2 BC856- BC860 Rev. B www.fairchildsemi.com BC856 -
OCR Scan
bc 212 equivalent siemens CIB
Abstract: â  bbsanai o q e h m ?^ ? s s « a p x N ANER PHILIPS/DISCRETE BC859 BC860 b?E V y , equipment in thick and thin-film hybrid circuits. QUICK REFERENCE DATA BC859 BC860 30 50 V V , < Dimensions in mm MHz Marking code: Fig. 1 SOT-23. BC859 BC859A BC859B BC859C BC860 BC860A , BC860 N AMER PHILIPS/DISCRETE - A b7E , Collector-base voltage (open emitter) - v CBO BC860 max. 30 50 V 50 V Siemens
Original
Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2298 C2335 bc 3as 856W C2298 C2292 Q62702-C2296
Abstract: hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ V g E = 1 V , E O LE D B C 859 BC860 â  ^53=131 Q Q 155M L ^ â  mfr' N , BC860 Collector-base voltage (open emitter) ~ v CBO max, 30 50 V Collector-emitter , 859 BC860 Silicon planar epitaxial transistors t A - a < - / ? - Saturation , Noise figure at Rs = 2 k£l â'"I q = 200 juA; â'"V q E = 5 V BC859 BC860 fj f = 30 Hz to 15 -
OCR Scan
bc847bc Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742
Abstract: 711GÃ2b 00bfi445 33e! HPHIN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in , BC859 BC860 Collector-emitter voltage (+ Vre = 1 v) ~VCEX max. 30 50 V Collector-emitter voltage (open , 1.9 0.95 max 0AB -0.1 0.2©1A|B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 , Copyrighted By Philips Semiconductors. â  7110fl2b BC859 BC860 OObflMMt. 275 â PHIN JL RATINGS Limiting values in accordance with the Absolute Maximum System {IEC 134) BC859 BC860 Collector-base voltage -
OCR Scan
MARKING CODE 21E SOT323 Q62702-C2297 Q62702-C2299 Q62702-C2300 Q62702-C2301 Q62702-C2302 Q62702-C2303
Abstract: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE , BC860 50 45 200 250 150 125 900 100 100 1,2 4 4 1 3 4 V V mA mW °C MHz dB dB dB BC859 BC860 RATINGS (at T a = 25°C unless otherwise specified) Limiting values , max. max. max. max. max. max. max. max. max. max. BC859 30 30 30 5 BC860 50 V 50 -
OCR Scan
BC 511 MARKING 3FS BC857W BC858W BC859W EHP009U CHP00377 BC856W-
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