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BC860 equivalent

Catalog Datasheet MFG & Type PDF Document Tags

marking 3Fs

Abstract: bc857b infineon = 0.2 mA, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k, BC860 Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 . 50 Hz , BC860 Vn 0.11 µV F 1 4 dB Ceb 9 Ccb 2 pF fT 250 MHz Symbol min
Infineon Technologies
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marking 3Fs bc857b infineon BC857 BC847 BC850 BC857B BC857C BC860C

BC860

Abstract: Q002 , f = 30 . . . 15000 Hz BC859 F - 1.2 4 dB BC860 F - 1.2 2 dB Equivalent Noise EMF at -VCE = 5 V , ITT SEMICON»/ INTERHETALL 5ÃE J> m Mbö5711 0D02.5T4 b^O «ISI T-2PI-I5 BC856 . . . BC860 , , the types BC857, BC858, BC859 and BC860 can be supplied in all three groups. The BC859 is a low noise type and the BC860 a extremely low noise type. As complementary types the NPN transistors BC846 . . . , Symbol Value Unit Collector Base Voltage BC856 â'"VcBO 80 V BC857, BC860 â'"VcBO 50 V BC858, BC859
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BC856AR BC856A Q002 BC860 equivalent BC857A BC858A BC859A BC860A
Abstract: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE , BC860 50 45 200 250 150 125 900 100 100 1,2 4 4 1 3 4 V V mA mW °C MHz dB dB dB BC859 BC860 RATINGS (at T a = 25°C unless otherwise specified) Limiting values , max. max. max. max. max. max. max. max. max. max. BC859 30 30 30 5 BC860 50 V 50 -
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BC859 smd

Abstract: BC859 -23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G , > 100 100 MHz F typ. < < 1,2 4 4 1 3 4 dB dB dB F Data Sheet BC860 max. max. max. max. max. > < Page 1 of 3 BC859 BC860 RATINGS (at TA = 25°C unless , . max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250
Continental Device India
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BC859 smd C-120

BC860

Abstract: BCB60 ï»¿â  bhS3n31 â¡ GE447lì 755 BIAPX N AUER PHILIPS/DISCRETE b?E J> BC859 BC860 SILICON PLANAR , hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ Vgg = 1 V) ~VCEX , |B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 = 4Hp BC860A = 4Ep , . mbboib October 1993 353 This Material Copyrighted By Its Respective Manufacturer BC859 BC860 I â , the Absolute Maximum System (I EC 134) BC859 BC860 Collector-base voltage (open emitter) -vCBO
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BCB59C BCB60 BCB59 philips hq G-024 GE447 S3T31 G024M63

marking TN4

Abstract: 33E marking 711GÃ2b 00bfi445 33e! HPHIN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in , BC859 BC860 Collector-emitter voltage (+ Vre = 1 v) ~VCEX max. 30 50 V Collector-emitter voltage (open , 1.9 0.95 max 0AB -0.1 0.2©1A|B Marking code: BC859 = 4Dp BC859A = 4Ap BC859B = 4Bp BC859C = 4Cp BC860 , Copyrighted By Philips Semiconductors. â  7110fl2b BC859 BC860 OObflMMt. 275 â PHIN JL RATINGS Limiting values in accordance with the Absolute Maximum System {IEC 134) BC859 BC860 Collector-base voltage
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marking TN4 33E marking 7Z96885 7Z60I33

4gp transistor

Abstract: . < BC860 1,2 4 1 3 dB dB 1 4 1 4 dB dB typ. < Equivalent noise voltage at Rg , â  bbsanai o q e h m ?^ ? s s « a p x N ANER PHILIPS/DISCRETE BC859 BC860 b?E V y , equipment in thick and thin-film hybrid circuits. QUICK REFERENCE DATA BC859 BC860 30 50 V V , < Dimensions in mm MHz Marking code: Fig. 1 SOT-23. BC859 BC859A BC859B BC859C BC860 BC860A , BC860 N AMER PHILIPS/DISCRETE - A b7E
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4gp transistor QQ24463

BC857

Abstract: DSA003670 SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC856 BC858 BC860 ISSUE 6 - APRIL , BC859CZ4C BC859 BC849 BC857C3G BC860AZ4E BC860 BC850 BC858A3J BC860B4F BC858B3K , and Storage Temperature Range BC858 BC859 BC860 -30 -30 -30 -30 -30 -30 -5 -100 , . VBE(sat) Typ BC856 BC857 BC858 BC859 BC860 -15 -4 -75 -75 -300 -300 VBE Min Typ Max , base current. BC856 BC858 BC860 BC857 BC859 ELECTRICAL CHARACTERISTICS (Continued
Zetex Semiconductors
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DSA003670 BC856B BC858B BC858C BC848 equivalent spice bc847 BC856A3A BC858C3L BC856BZ3B BC859AZ4A BC857AZ3E BC859B4B

BC857A

Abstract: BC860 BC846 BC847 BC848 BC849 BC850 BC856 BC858 BC860 BC857 BC859 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L V CBO V CES V CEO V EBO 'c 'e m 'b m 'em BC856 BC857 BC858 BC859 BC860 Collector-Base , BC856 BC857 BC858 -15 BC859 BC860 Max Max UNIT CONDITIONS. nA V c b =-30V (iA -4 , through the operating point lc = 11mA, VCE= 1V at constant base current. BC856 BC858 BC860 PARAMETER , BC856 BC857 BC858 BC859 BC860 2 10 2 10 2 10 1 4 1.2 4 1 4 1 3 UNIT CONDITIONS. dB V c
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BC856A-3A BC856B-Z3B BC857A-Z3E BC857B-3F BC857C-3G BC858A-3J
Abstract: r r z SGS-THOM SON Ä T f M lioe m s e îli» !» BC857/BC858 BC859/BC860 SMALL SIGNAL PNP , ebo Parameter BC857/BC860 Collector-Emitter Voltage ( V b e = 0) Collector-Base Voltage (Ie = 0 , 7 ^2^ 237 D77c H l4 ETD BC857/BC858/BC859/BC860 THERMAL DATA Rthj-amb · Rthj-SR · Thermal , = -30 V VCE = -30 V Tamb = 150 °C V(BR)CES* lc = -10 H-A fo r BC857/BC860 fo r BC858/BC859 lc = -10 |iA for BC857/BC860 for BC858/BC859 lc = -2 mA for BC857/BC860 for BC858/BC859 lc = -10 -
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BC859/BC860 BC857/BC860 BC857/BC858/BC859/BC860

bc860

Abstract: bc858 BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS Type Marking BC857A 3E BC857B , MAXIMUM RATINGS Symbol Parameter Value Uni t BC857/BC860 V CES Collector-Emitter Voltage , /BC859/BC860 THERMAL DATA R t hj-amb · R th j-SR · Thermal Resistance Junction-Ambient Thermal , Collector-Emitter Breakdown Voltage (V BE = 0) I C = -10 µA for BC857/BC860 for BC858/BC859 -50 -30 V V V ( BR)CBO Collector-Base Breakdown Voltage (I E = 0) I C = -10 µA for BC857/BC860 for
STMicroelectronics
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374C tbc857 0044616/B

bc860

Abstract: MARKING CODE 3J . BC860 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications , however, the types BC857, BC858, BC859 and BC860 can be supplied in all three groups. The BC859 is a low noise type and the BC860 a extremely low noise type. As complementary types the NPN transistors BC846 . , Absolute Maximum Ratings Symbol Collector Base Voltage BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860 BC858, BC859 BC856 BC857, BC860 BC858, BC859 Value Unit V V V V V V V V V V mA mA mA mA mW °C °C
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MARKING CODE 3J marking 4A
Abstract: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 = , RATINGS BC859 BC860 Collector-emitter voltage (+V be = 1 V) Collector-emitter voltage (open base , BC860 RA TIN G S (at T a = 25°C unless otherwise specified) Limiting values Collector-base voltage , . max. max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250 mW -55 to -
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BC860

Abstract: BC859 BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 , mm _3.0_ 2.8 0.48 0.38 3 _1,02_ 0.89 _2.00_ 1.80 0.14 ABSOLUTE MAXIMUM RATINGS BC859 BC860 , < 4 3 f = 1 KHz; B = 200 Hz F < 4 4 32 BC859 BC860 RATINGS (at Ta = 25°C unless otherwise specified) Limiting values BC859 BC860 Collector-base voltage (open emitter) -Vcbq max. 30 50 V
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BC859

Abstract: BC859A BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G Pin configuration 1 , ¡745 BC859 BC860 -VCEX max. 30 50 V -VCEO max. 30 45 V -ICM max. 200 200 mA Ptot max. 250 250 mW Ti max , This Material Copyrighted By Its Respective Manufacturer BC859 BC860 RATINGS (at Ta = 25°C unless , dissipation up to Tamb = 60 °C* P(0t max. Storage temperature Tstg Junction temperature Tj max. BC860 30
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BST 33 23B33TM DD007147

BC859R

Abstract: 7Z66 N AMER PHILIPS/DISCRETE Db EJ> ^53^31 D01SSMS 7 BC859 BC860 T"-a S1LICON PLANAR EPITAXIAL , hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ VÃg = 1 V) -vcex , ,7 mm. a -Vbe decreases by about 2 mV/K with increasing temperature. BC859 BC860 30 50 V 30 50 V , f = 1 kHz; B = 200 Hz Equivalent noise voltage at Rs = 2 k£2 -lc=200 iiA;-VCE = 5V f = 10 Hz to 50 , selections *T Ne hFE hFE hFE hFE L BC859 BC860 -/ 5 -VCEsat typ. < 75 300 mV mV -VÃEsat typ. 700 mV
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BC859R 7Z66 silicon planar epitaxial transistors BC860AR 7Z66908 5313I D015551
Abstract: hybrid circuits. QUICK REFERENCE DATA BC859 BC860 Collector-emitter voltage (+ V g E = 1 V , E O LE D B C 859 BC860 â  ^53=131 Q Q 155M L ^ â  mfr' N , BC860 Collector-base voltage (open emitter) ~ v CBO max, 30 50 V Collector-emitter , 859 BC860 Silicon planar epitaxial transistors t A - a < - / ? - Saturation , Noise figure at Rs = 2 k£l â'"I q = 200 juA; â'"V q E = 5 V BC859 BC860 fj f = 30 Hz to 15 -
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BC859

Abstract: BC859A SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G , > 100 100 MHz F typ. < < 1,2 4 4 1 3 4 dB dB dB F Data Sheet BC860 max. max. max. max. max. > < Page 1 of 3 BC859 BC860 RATINGS (at TA = 25°C unless , . max. BC859 30 30 30 5 BC860 50 V 50 V 45 V 5 V 100 mA 200 mA 200 mA 200 mA 250
Continental Device India
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ISO/TS16949

top marking 1B sot23

Abstract: marking 3bs , BC859, BC850 Equivalent noise voltage IC = 200 mA, V CE = 5 V, R S = 2 k, f = 10.50 Hz, BC860 Vn 0.11 , . Maximum Ratings Parameter Collector-emitter voltage BC856. BC857., BC860. BC858., BC859. Collector-base voltage BC856. BC857., BC860. BC858., BC859. Emitter-base voltage Collector current Peak , , BC857., BC860. IC = 10 mA, IB = 0 , BC858., BC859. 65 45 30 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC856. IC = 10 µA, IE = 0 , BC857., BC860. IC = 10
Infineon Technologies
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BC856-BC860 top marking 1B sot23 marking 3bs 3bs marking code 3BS MARKING SOT23 3ks BC856BW BC857BF BC857BL3 BC857BW

MARKING 3FS

Abstract: marking 3bs ., BC860. 45 BC858., BC859. 30 Collector-base voltage VCBO BC856. 80 BC857., BC860. 50 BC858., BC859. 30 5 Emitter-base voltage VEBO Collector current IC , . 30 - - IC = 10 µA, IE = 0 , BC856. 80 - - IC = 10 µA, IE = 0 , BC857., BC860 , 10 mA, IB = 0 , BC857., BC860. Unit - Collector-base breakdown voltage V(BR)CBO , , VCE = 5 V, f = 1 kHz, D f = 200 Hz, RS = 2 k, BC859, BC850 Equivalent noise voltage IC = 200 mA
Infineon Technologies
Original
bcr1 BC846 Infineon BC857 3fs BC860BW BC857CW BC858BL3 BC858BW BC858CW
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