BC857BRLT1 236AB - Datasheet Archive

General Purpose Transistors PNP Silicon BC857BRLT1 3 COLLECTOR is LRC prefered Device 1 BASE 3 2 EMITTER 1 2 CASE 31808,

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BC857BRLT1 BC857BRLT1 3 COLLECTOR is LRC prefered Device 1 BASE 3 2 EMITTER 1 2 CASE 31808, STYLE 6 MAXIMUM RATINGS Rating SOT 23 (TO236AB 236AB) Symbol Value Unit CollectorEmitter Voltage V CEO 50 V CollectorBase Voltage V CBO 60 V EmitterBase Voltage V 6.0 V EBO Collector Current - Continuous IC 150 mAdc Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING BC857BRLT1 BC857BRLT1 =G3F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V 50 - - V V (BR)EBO 6 - - V V 60 - - V I CBO - - 0.1 µA I EBO - - 0.1 µA V CE(sat) - - -0.5 V h FE 120 560 fT - 140 MHz C ob CollectorEmitter Breakdown Voltage (IC = 1 mA) EmitterBase Breakdown Voltage (IE = 50 µA) CollectorBase Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 6 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) - 4.0 5.0 pF (BR)CEO (BR)CBO h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 M351/3 LESHAN RADIO COMPANY, LTD. BC857BRLT1 BC857BRLT1 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) 20 35.0 10 VCE= 10 V T A = 100°C 25°C 40°C 10 50 2 1 0.5 T A = 25°C 28.0 8 24.5 21.0 6 17.5 14.0 4 10.5 7.0 2 3.5µA 0.2 0.1 I B =0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 0.4 0.8 1.2 1.6 2.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) 100 500 T A = 25°C 80 60 VCE= 5 V 3V 1V T A = 25°C 500 450 400 350 300 h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) 31.5 250 200 150 40 100 20 50 µA 200 100 50 I B =0 0 0 1 2 3 4 5 0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 0.5 1 2 5 10 20 50 100 I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) 500 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) collector current ( ) T A = 100°C h FE, DC CURRENT GAIN 25°C 40°C 200 100 50 VCE= 6V 0.2 0.5 1 2 5 10 20 I C, COLLECTOR CURRENT (mA) 50 100 1 T A = 25°C 0.5 0.2 I C /I B = 50 20 0.1 10 0.05 0.2 0.5 1 2 5 10 20 50 100 I C, COLLECTOR CURRENT (mA) M352/3 LESHAN RADIO COMPANY, LTD. BC857BRLT1 BC857BRLT1 Fig.8 Gain bandwidth product vs. emitter current 1000 1 T A = 25°C V CE = 12V f r , TRANSITION FREQUENCY(MHz) I C /I B = 10 0.5 0.2 T A = 100°C 25°C 40°C 0.1 0.05 0.2 0.5 1 2 5 10 20 50 500 200 100 50 100 0.2 0.5 1 2 5 10 20 50 100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 0.5 1 2 5 10 20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) M353/3