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BC849C-TP Micro Commercial Components Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy
BC849CE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, visit Digikey Buy
BC849CWH6327XTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
BC849BE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, visit Digikey Buy
BC849B-TP Micro Commercial Components Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 visit Digikey Buy

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Part : BC849CLT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 20,695 Best Price : £0.0204 Price Each : £0.0864
Part : BC849CW,115 Supplier : Nexperia Manufacturer : Farnell element14 Stock : - Best Price : £0.0307 Price Each : £0.1280
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Part : BC849CW,115 Supplier : Nexperia Manufacturer : New Advantage Stock : 33,000 Best Price : $0.0454 Price Each : $0.0492
Part : BC849CW,115 Supplier : NXP Semiconductors Manufacturer : Wuhan P&S Stock : 260 Best Price : $0.03 Price Each : $0.03
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BC849 Datasheet

Part Manufacturer Description PDF Type
BC849 Continental Device India Silicon Planar Epitaxial Transistors Original
BC849 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC849 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC849 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC849 General Semiconductor Small Signal Transistors (NPN) Original
BC849 General Semiconductor General Purpose Bipolar Transistor, NPN, 30V, SOT-23, 3-Pin Original
BC849 General Semiconductor Small Signal Transistor Original
BC849 Infineon Technologies VCEO=30V ICM=200 mA Original
BC849 Kexin NPN General Purpose Transistors Original
BC849 Korea Electronics General Purpose Transistor Original
BC849 Philips Semiconductors Surface mount Si-Epitaxial PlanarTransistors Original
BC849 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC849 Rectron Semiconductor NPN Transistor Original
BC849 Siemens Cross Reference Guide 1998 Original
BC849 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC849 TY Semiconductor NPN General Purpose Transistors - SOT-23 Original
BC849 Zetex Semiconductors SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTOR Original
BC849 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BC849 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan
BC849 Korea Electronics General Purpose Transistor Scan
Showing first 20 results.

BC849

Catalog Datasheet MFG & Type PDF Document Tags

BC846

Abstract: BC849 BC846 THRU BC849 Small Signal Transistors (NPN) FEATURES NPN Silicon Epitaxial Planar , B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a low , 1G BC848A B C BC849B C 1J 1K 1L 2B 2C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS , Collector-Base Voltage BC846 BC847 BC848, BC849 VCBO VCBO VCBO 80 50 30 V V V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCES VCES VCES 80 50 30 V V V
General Semiconductor
Original
BC856 BC859 BC846A BC847A

BC849

Abstract: marking 1A BC846 thru BC849 Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 , (0.95) Type BC846A B BC847A B C Marking 1A 1B 1E 1F 1G Type BC848A B C BC849B C Marking 1J , BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B and C. As , Characteristics (T Parameter Collector-Base Voltage BC846 BC847 BC848, BC849 BC846 BC847 BC848, BC849 BC846 BC847 BC848, BC849 BC846, BC847 BC848, BC849 Symbol VCBO = 25°C unless otherwise noted) Value 80 50 30
General Semiconductor
Original
marking 1A E8/10K 100MH 15000H

ITT Intermetall

Abstract: BC849 BC846 . BC849 NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier , groups A and B, however, the types BC847 and BC848 can be supplied in all three groups. The BC849 is a , BC847A B C Marking 1A 1B 1E 1F 1G Type BC848A B C BC849B C Marking 1J 1K 1L 2B 2C n It . 0 95 0.95 , Collector-Base Voltage BC846 BC847 BC848, BC849 BC846 BC847 BC848, BC849 BC846 BC847 BC848, BC849 BC846, BC847 BC848, BC849 VCBO VcBO VCBO VCES VCES VCES VCEO VCEO VCEO VEBO Vebo v v V V V V V V V mA mA mA mA
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OCR Scan
ITT Intermetall

BC848 equivalent

Abstract: bc847 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846AZ1A BC848B1K BC846 BC856 BC846B1B BC848CZ1L BC847 BC857 BC847AZ1E BC849B2B BC848 BC858 BC847B1F BC849C2C BC849 BC859 BC847C1GZ BC850B2FZ BC850 BC860 BC848A1JZ E C BC850C-Z2G , 80 80 65 50 50 45 BC848 BC849 30 30 30 30 30 30 5 6 BC850 50 50 45 , . Typ Max. VBE(sat) Typ VBE BC846 BC847 BC848 BC849 BC850 15 5 90 250 200 600 300
Zetex Semiconductors
Original
BC848 equivalent X10-4 BC849C-2C spice bc847 DSA003670 BC846B

BC849

Abstract: BC846 BC846 thru BC849 Small Signal Transistors (NPN) TO-236AB (SOT-23) Mounting Pad Layout .122 , and BC848 can be supplied in all three groups. The BC849 is a low noise type available in groups B , Marking BC848A B C 1E 1F 1G 1J 1K 1L BC849B C 1A 1B Maximum Ratings and Thermal , Collector-Base Voltage BC846 BC847 BC848, BC849 VCBO 80 50 30 V Collector-Emitter Voltage BC846 BC847 BC848, BC849 VCES 80 50 30 V Collector-Emitter Voltage BC846 BC847
General Semiconductor
Original

BC850

Abstract: BC849 UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER , / BC850 BC848 / BC849 Collector-Emitter Voltage BC846 BC847 / BC850 BC848 / BC849 Emitter-Base Voltage BC846 / BC847 BC848 / BC849 / BC850 Collector Current (DC) Collector Dissipation Junction , BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER Base-Emitter On Voltage , BC849/BC850 BC849 BC850 SYMBOL VBE(on) fT Cob Cib NF TEST CONDITIONS MIN TYP MAX
Unisonic Technologies
Original
TRANSISTOR 8BB mark 720 transistor 8bc transistor 8cb BC846 SOT-23 BC846/BC847/BC848/BC849/BC850 QW-R206-027 BC846/BC847/BC848 BC849/BC850

BC850

Abstract: bc849 UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER , / BC849 Collector-Emitter Voltage BC846 BC847 / BC850 BC848 / BC849 Emitter-Base Voltage BC846 / BC847 BC848 / BC849 / BC850 Collector Current (DC) Collector Dissipation Junction Temperature Storage , UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta , Output Capacitance Input Capacitance Noise Figure: BC846/BC847/BC848 BC849/BC850 BC849 BC850 SYMBOL
Unisonic Technologies
Original
marking code P QW-R220-002

BC849

Abstract: BC849B SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS , ABSOLUTE MAXIMUM RATINGS BC849 Collector­emitter voltage (VBE = 0) Collector­emitter voltage (open , Page 1 of 3 BC849 BC850 RATINGS (at TA = 25°C unless otherwise specified) Limiting values , temperature Junction temperature BC849 VCBO VCES VCEO VEBO IC ICM ­I EM IBM Ptot Tstg Tj
Continental Device India
Original
BC850C ISO/TS16949 C-120

bc850

Abstract: .0 _ 2.8 M arking code: BC849 BC849B BC849C BC850 BC850B BC850C = = = = 2 Dp 2Bp 2Cp 2Hp [T , BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage ( V 0 g = 0) C o lle c , BC849 BC850 R A T IN G S L im itin g values in accordance w ith the A b so lu te M axim um System (IE C 134) BC849 Collector-base voltage (open e m itte r) C o lle c to r-e m itte r voltage (V g jr = 0) C o
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OCR Scan
Z9SB85

BC850C

Abstract: NB SOT-23 NPN on request. Dimensions in mm T n 0.U8 -0.1 7Z9688S. 1 TOP VIEW Marking code: BC849 = 2Dp BC849B = 2Bp BC849C =2Cp BC850 = 2Hp BC850B =2Fp BC850C =2Gp Pinning: 1 = base 2 = emitter 3 = collector MBB012 , vn max. 0,135 BC849B BC849C BC850B BC850C hFE typ. 150 270 > 200 420 hFE typ. 290 520 < 450 , 7110flBb OOböMBfl EST â PHIN BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC849 BC850 Collector-emitter voltage (VÃE = 0
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OCR Scan
NB SOT-23 NPN BC850C equivalent 7Z88087

2FP TRANSISTOR

Abstract: 2gp Transistor BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B BC850C MARKING CODE , current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849; BC850 BC849B; BC850B BC849C , power dissipation DC current gain BC849B; BC850B; BC849C; BC850C 290 520 - ICM Plot hFE 200 420 , general purpose transistors BC849; BC850 M BH724 BC849B; BC850B. Fig.2 DC current gain , current (max. 100 mA) · Low voltage (max. 45 V). BC849; BC850 PINNING PIN 1 2 3 base emitter
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OCR Scan
BCB50C 2FP TRANSISTOR 2gp Transistor BCB50 marking 2Fp bc850c, sot23 BC84S BC85C

BC850C

Abstract: BC849C MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see Figs 2 and 3 BC849C , DISCRETE SEMICONDUCTORS DATA SHEET BC849; BC850 NPN general purpose transistors Product , NPN general purpose transistors BC849; BC850 FEATURES PINNING · Low current (max. 100 mA , TYPE NUMBER BC849B PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads
NXP Semiconductors
Original
2F PNP SOT23 bc850 nxp 2G BC850C NXP BC849B MAM255 R75/06/

BC849

Abstract: NPN sot23 mark NF No. MARK SPEC TYPE BC849B BC849C BC850B BC850C MARK 2B 2C 2F 2G , SEMICONDUCTOR BC849/850 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES E B L L BC849 Collector-Emitter Voltage , E G H J K L M N P M K BC849 Collector-Base Voltage RATING 3 N SYMBOL , . ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Emitter BC849 Breakdown
KEC
Original
NPN sot23 mark NF 2f bc850 2F P marking BC849/850 BC859/860
Abstract: â  bbS3R31 00244b2 451 â  APX N AMER PHILIPS/DISCRETE BC849 BC850 b7E 1 SILICON , E D A T A BC849 Collector-emitter voltage ( V g E = 0) B C 850 V CES max. 30 50 , 3=16 M APX BC849 N AMER PHILIPS/DISCRETE BC850_ _ b?E D RATIN G S Limiting values in accordance with the Absolute Maxim um System (IE C 134) BC849 B C 850 50 V V , . 334 October 1993 ^th j-a = 500 K/W â  bbsa^ai 00244b4 224 « A P X BC849 BC850 -
OCR Scan
S3R31 53T31 DD24M

BC846x

Abstract: sot-23 marking code 8C /BC849L/BC850L ORDERING INFORMATION Order Number Normal Lead Free Plating BC846-x-AE3-6-R BC846L-x-AE3-6-R BC847-x-AE3-6-R BC847L-x-AE3-6-R BC848-x-AE3-6-R BC848L-x-AE3-6-R BC849-x-AE3-6-R BC849L-x-AE3-6-R BC850-x-AE3 , Reel Tape Reel Tape Reel Tape Reel MARKING BC846 BC847 BC848 BC849 BC850 8A 8B 8C 8D , BC847 / BC850 BC848 / BC849 BC846 BC847 / BC850 BC848 / BC849 BC846 / BC847 BC848 / BC849 / BC850 VCBO , Capacitance Input Capacitance BC846/BC847/BC848 BC849/BC850 Noise Figure BC849 BC850 SYMBOL TEST CONDITIONS
Unisonic Technologies
Original
BC846x sot-23 marking code 8C marking 8A sot-23 marking 8b sot-23 BC846-BC850 BC846L/BC847L/BC848L/BC849L/BC850L BC846- BC846L- BC847- BC847L-
Abstract: =48C BC849B=49B BC849C=49C BC850B=50B BC850C=50C ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage BC846 BC847,BC850 BC848,BC849 BC846 BC847,BC850 BC848,BC849 BC846 BC847,BC850 BC848,BC849 Symbol VCEO , BC846,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS CURVE (BC847C,BC848C,BC849C,BC850C , BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE FEATURES · General , ,BC847,BC848,BC849,BC850 SERIES ELECTRICAL CHARACTERISTICS PA RA ME TE R C o lle c to r - E mi tte r B PanJit International
Original
2002/95/EC MIL-STD-750 BC847B BC848B 2011-REV

bc849

Abstract: BC846 THRU BC849 Small Signal Transistors (NPN) FEATURES SOT-23 â  122 (3.1) .118 (3.0 , all three groups. The BC849 is a low noise type available in groups B and C. As com plem entary , 1J 1K 1L BC849B C 2B 2C _ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS , o lle c to r-B a s e V oltage BC846 BC847 BC848, BC849 Vcbo V cB O V CBO 80 50 30 V V V C o lle c to r-E m itte r V oltage BC846 BC847 BC848, BC849 V cE S V cE S 80
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OCR Scan

bc849

Abstract: bc850c MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC849B 2B* BC850B 2F* BC849C 2C , 800 BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B IC = 2 mA; VCE = 5 V; see , DISCRETE SEMICONDUCTORS DAT BC849; BC850 NPN general purpose transistors Product data sheet , purpose transistors BC849; BC850 FEATURES PINNING â'¢ Low current (max. 100 mA) PIN â , TYPE NUMBER BC849B PACKAGE NAME â' DESCRIPTION plastic surface mounted package; 3 leads
NXP Semiconductors
Original

BC849

Abstract: BC849B current gain BC849B; BC850B BC849C; BC850C VCEsat collector-emitter saturation voltage , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general , Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING , MARKING TYPE NUMBER TYPE NUMBER MARKING CODE(1) MARKING CODE(1) BC849B 2B BC850B 2F BC849C 2C BC850C 1 2 2 2G Top view MAM255 Note 1. = p : Made in
Philips Semiconductors
Original
SCA63

BC850 SOT23

Abstract: 2FP TRANSISTOR BC860. PINNING PIN 1 2 3 base emitter collector BC849; BC850 DESCRIPTION handbook, halfpage 3 3 1 MARKING TYPE NUMBER BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B , BC849C; BC850C hFE DC current gain BC849; BC850 BC849B; BC850B BC849C; BC850C VCEsat VBEsat VBE Cc Ce fT , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose , symbol. QUICK REFERENCE DATA SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 ICM
Philips Semiconductors
Original
BC850 SOT23 SCA60

C2310

Abstract: transistor Bc 580 BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P N transistors in a plastic SO T-23 package. Q U IC K R E F E R E N C E D A T A BC849 C o lle c to r-e m itte r voltage ( V 0 g = 0) C o lle c , .0 _ 2.8 M arking code: BC849 BC849B BC849C BC850 BC850B BC850C = = = = 2 Dp 2Bp 2Cp 2Hp [T , BC849 BC850 R A T IN G S L im itin g values in accordance w ith the A b so lu te M axim um System (IE C 134) BC849 Collector-base voltage (open e m itte r) C o lle c to r-e m itte r voltage (V g jr = 0) C o
Siemens
Original
Q62702-C2305 C2310 transistor Bc 580 c2312 TRANSISTOR bc 847 TRANSISTOR BC 135 TRANSISTOR BC Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2306 Q62702-C2307

BC850 SOT23

Abstract: C849 â  bbS3R31 00244b2 451 â  APX N AMER PHILIPS/DISCRETE BC849 BC850 b7E 1 SILICON , E D A T A BC849 Collector-emitter voltage ( V g E = 0) B C 850 V CES max. 30 50 , 3=16 M APX BC849 N AMER PHILIPS/DISCRETE BC850_ _ b?E D RATIN G S Limiting values in accordance with the Absolute Maxim um System (IE C 134) BC849 B C 850 50 V V , . 334 October 1993 ^th j-a = 500 K/W â  bbsa^ai 00244b4 224 « A P X BC849 BC850
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OCR Scan
C849 276.C850
Abstract: UTC BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER , / BC850 BC848 / BC849 Collector-Emitter Voltage BC846 BC847 / BC850 BC848 / BC849 Emitter-Base Voltage BC846 / BC847 BC848 / BC849 / BC850 Collector Current (DC) Collector Dissipation Junction , BC846/BC847/BC848/BC849/BC850 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER Base-Emitter On Voltage , BC849/BC850 BC849 BC850 SYMBOL VBE(on) fT Cob Cib NF TEST CONDITIONS MIN TYP MAX -
OCR Scan

BC848

Abstract: BC847 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general , Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING , BC849 - 30 V BC850 - 45 V BC849 BC850 VCEO collector-emitter voltage , purpose transistors BC849; BC850 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS , Semiconductors Product specification NPN general purpose transistors BC849; BC850 MBH724 300
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OCR Scan
Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741

C1507

Abstract: b 857 7110flBb OOböMBfl EST â PHIN BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC849 BC850 Collector-emitter voltage (VÃE = 0 , on request. Dimensions in mm T n 0.U8 -0.1 7Z9688S. 1 TOP VIEW Marking code: BC849 = 2Dp BC849B = 2Bp , . â  711002b OObflMH^ nb â PHIN BC849 BC850 RATINGS Limiting values in accordance with the Absolute Maximum System {IEC 134) BC849 BC850 Collector-base voltage (open emitter) vCBO max. 30 50 V
Siemens
Original
Q62702-C1727 C1507 b 857 sot-23 marking 1Fs sot-23 marking 3Fs 1Bs sot-23 bc 750 Q62702-C1704 Q62702-C1506 Q62702-C1713 Q62702-C1885 Q62702-C1712

transistor c2311

Abstract: transistor Bc 580 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC849; BC850 NPN general purpose , BC860. PINNING PIN 1 2 3 base emitter collector BC849; BC850 DESCRIPTION handbook, halfpage 3 3 1 MARKING TYPE NUMBER BC849 BC849B BC849C MARKING CODE 2Dp 2Bp 2Cp TYPE NUMBER BC850 BC850B , symbol. QUICK REFERENCE DATA SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 ICM , LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850
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OCR Scan
transistor c2311 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 Q62702-C2308 Q62702-C2309 Q62702-C2310 62702-C2311 Q62702-C2312 Q62702-C2313
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