BC846PN VPS05604 EHA07193 EHA07177 EHP00361 EHP00363 EHP00381 EHP00367 EHP00365 - Datasheet Archive

 

NPN/PNP Silicon AF Transistor Array 4 5 For AF input stages and driver applications High current gain Low collector-emitter

 

BC846PN BC846PN NPN/PNP Silicon AF Transistor Array 4 5 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP 6 Transistors in one package 2 3 1 VPS05604 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 B2 E2 6 5 4 W1s 1 2 3 TR2 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling EHA07193 EHA07193 TR1 1 2 3 E1 B1 C2 EHA07177 EHA07177 Type Marking BC846PN BC846PN 1Os Pin Configuration Package 1=E 2=B 3=C 4=E 5=B 6=C SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 65 Collector-base voltage VCBO 80 Collector-emitter voltage VCES 80 V Emitter-base voltage VEBO 5 V DC collector current IC 100 Peak collector current ICM 200 Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V mA -65 . 150 Thermal Resistance Junction - soldering point 1) RthJS 140 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC846PN BC846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 65 - - V(BR)CBO 80 - - V(BR)CES 80 - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) - hFE IC = 10 µA, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 200 290 450 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 90 300 IC = 100 mA, IB = 5 mA - 200 650 Base-emitter saturation voltage 1) mV VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - IC = 2 mA, VCE = 5 V 580 660 750 IC = 10 mA, VCE = 5 V - - 820 Base-emitter voltage 1) VBE(ON) 1) Pulse test: t < 300 s; D < 2% 2 Nov-29-2001 BC846PN BC846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 2 - pF Ceb - 10 - h11e - 4.5 - k h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - AC Characteristics per Transistor Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz 3 Open-circuit output admittance S Nov-29-2001 BC846PN BC846PN Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-29-2001 BC846PN BC846PN Collector-base capacitance CCB = f (VCBO) Transition frequency fT = f (IC) Emitter-base capacitance CEB = f (VEBO ) VCE = 5V 12 pF C CB0 ( C EB0 ) BC 846.850 EHP00361 EHP00361 EHP00363 EHP00363 10 3 MHz fT 10 8 5 C EB 10 2 6 5 4 C CB 2 0 10 -1 5 10 0 V VCB0 10 1 10 -1 10 1 (VEB0 ) 5 10 0 5 10 1 mA 10 2 C Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00381 EHP00381 10 4 nA CB0 EHP00367 EHP00367 10 2 C mA 10 3 100 C 25 C -50 C 5 10 1 max 10 2 5 5 typ 10 1 5 10 10 0 5 0 5 10 -1 0 50 100 C 10 -1 150 TA 5 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Nov-29-2001 BC846PN BC846PN DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00365 EHP00365 10 3 h FE 5 100 C EHP00364 EHP00364 10 2 C mA 100 C 25 C -50 C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 10 0 5 10 -1 5 10 1 10 -1 mA 10 2 0 0.2 0.4 0.6 0.8 C V 1.2 V BEsat h parameter he = f (IC) normalized h parameter he = f (VCE) normalized VCE = 5V IC = 2mA EHP00368 EHP00368 10 2 he 5 he h 11e C = 2 mA h 21 e 1.5 VCE = 5 V 10 1 5 EHP00369 EHP00369 2.0 h 12e h 11 e h 12 e 1.0 h 22 e 10 0 h 21e 0.5 5 h 22e 10 -1 0 10 -1 5 10 0 mA 10 1 C 0 10 20 V 30 VCE 6 Nov-29-2001