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Part : BC808W Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 1,172 Best Price : - Price Each : -
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BC808W Datasheet

Part Manufacturer Description PDF Type
BC808W Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC808W Infineon Technologies PNP Silicon AF Transistors Original
BC808W Philips Semiconductors PNP general purpose transistor Original
BC808W Philips Semiconductors PNP General Purpose Transistor Original
BC808W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC808W Siemens Cross Reference Guide 1998 Original
BC808-W N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BC808-W N/A Shortform Data and Cross References (Misc Datasheets) Scan
BC808WT/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

BC808W

Catalog Datasheet MFG & Type PDF Document Tags

BC807W

Abstract: BC808W BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W -VCBO -VCEO Emitter Base Voltage Value 50 30 45 25 , / BC808W Characteristics at Tamb = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V
Semtech Electronics
Original

5Ct transistor

Abstract: transistor 5bt High current (max. 500 mA) Low voltage (max. 45 V). BC807W; BC808W PINNING PIN 1 2 3 base emitter , BC807-16W BC807-25W BC807-40W MARKING CODE 5Dt 5At 5Bt 5Ct TYPE NUMBER BC808W BC808-16W BC808 , ) and symbol. QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BC807W BC808W , the Absolute Maximum Rating System (IEC 134). BC807W; BC808W SYMBOL V CBO PARAMETER collector-base voltage BC807W BC808W collector-emitter voltage BC807W BC808W emitter-base voltage collector
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OCR Scan
5Ct transistor transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W BC817W BC818W BC808-25W BC808-40W BC808VV 1997J
Abstract: transistor FEATURES BC807W; BC808W PIN CONFIGURATION â'¢ High current â'¢ S- mini package , : BC807-16W 5A BC807-25W 5B BC807W - -50 V BC807-40W 5C BC808W - -30 V BC808W: 5H BC808-16W 5E collector-emitter open base voltage BC808-25W 5F BC807W - -45 V BC808-40W 5G BC808W - -25 V - -1 A - 200 mW , specification BC807W; BC808W LIMITING VALUES In accordance with the Absolute Maximum System (I EC 134). -
OCR Scan

BC807W

Abstract: BC808W BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W -VCBO -VCEO Emitter Base Voltage Value 50 30 45 25 , / BC808W Characteristics at Tamb = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V
Semtech Electronics
Original
Abstract: BC807W; BC808W PIN CONFIGURATION â'¢ High current â'¢ S- mini package. DESCRIPTION PNP , PARAMETER BC807-25W 5B 5C BC808W MIN. BC807W BC807-40W VcES g 5A CONDITIONS , -3 0 V -4 5 - V BC808W: 5H BC808-16W 5E collector-emitter open base voltage BC808-25W 5F BC807W BC808-40W 5G BC808W - -2 5 V Icm peak , BC807W; BC808W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL -
OCR Scan

marking 5bs

Abstract: BC807-16W BC807W, BC808W PNP Silicon AF Transistors 3 For general AF applications High , to Application Note Thermal Resistance 1 Nov-29-2001 BC807W, BC808W Electrical , BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W 30 - - V , ) Pulse test: t 300µs, D = 2% 2 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA , Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC807W, BC808W Permissible Pulse
Infineon Technologies
Original
VSO05561 marking 5bs 3CMA marking 5Cs EHP00213 EHP00210 EHP00216 EHP00214 EHP00215

Transistor marking S

Abstract: BC807-16W transistor N AtlER PHILIPS/DISCRETE PIN CONFIGURATION BC807W; BC808W b?E J> FEATURES â'¢ High current , BC807-25W 5B BC807-40W 5C BC808W: 5H BC808-16W SE BC808-25W 5F BC808-40W 5G SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcES collector-emitter voltage BC807W BC808W VÅ" = 0 - -50 -30 V V VCEO collector-emitter voltage BC807W BC808W open base - -45 -25 V V 'cm peak collector current - -1 A Ptt total power , ; BC808W b7E T> SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCES collector-emitter voltage VBE = 0
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OCR Scan
Transistor marking S S3T31 002M443 MAM037

BC807W

Abstract: BC808W BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W Emitter Base Voltage -VCBO -VCEO Value 50 30 45 25 , / BC808W Characteristics at Tamb = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V
Semtech Electronics
Original
Abstract: '" BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j â'" â'" > â , PARAMETER CONDITIONS BC807-16W 5A collector-emitter voltage BC807-25W 5B 5C BC808W , BC808W MIN. BC807W BC807-40W BC808-40W V ces ii o 5D af* BC807W: BC808W , Philips Semiconductors Product specification PNP general purpose transistor BC807W; BC808W N , collector-emitter voltage BC807W -5 0 V BC808W V cE O _ - -3 0 V _ -4 5 V -
OCR Scan
53T31 0D24444 MRA947

5Ct transistor

Abstract: transistor 5ct 91 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W; BC808W PNP general , transistors BC807W; BC808W FEATURES PINNING · High current (max. 500 mA) PIN · Low voltage , TYPE NUMBER 2 MARKING CODE BC807W 5Dt BC808W BC807-16W 5At BC808-16W 1 , -30 V BC807W - -45 V BC808W - -25 V - -1 A Tamb 25 °C - 200 mW BC807W BC808W VCEO collector-emitter voltage ICM peak collector current
Philips Semiconductors
Original
transistor 5ct 91 Q 817 5ct 48 marking 5ft sp 40w MAM048 SCA54
Abstract: ; BC808W FEATURES · High current · S- mini package. PIN CONFIGURATION DESCRIPTION PNP transistor , DESCRIPTION base emitter collector QUICK REFERENCE DATA SYMBOL BC807W: BC807-16W BC807-25W BC807-40W BC808W , . UNIT VcES collector-emitter v oe = o voltage BC807W BC808W collector-emitter open base voltage BC807W BC808W peak collector current total power dissipation DC current gain transition frequency up to T , Semiconductors Product specification PNP general purpose transistor BC807W; BC808W LIMITING VALUES In -
OCR Scan

transistor 5d

Abstract: BC808W ; BC808W FEATURES â'¢ High current â'¢ S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 , . QUICK REFERENCE DATA BC807W: 5D BC807-16W 5A BC807-25W 5B BC807-40W 5C BC808W: 5H BC808-16W 5E , BC807W BC808W vÅ"=o - -50 -30 V V VcEO collector-emitter voltage open base BC807W - -45 V BC808W , general purpose transistor BC807W; BC808W LIMITING VALUES In accordance with the Absolute Maximum System , BC807W - -50 V BC808W - -30 V VCE0 collector-emitter voltage open base; lc = -10 mA BC807W -
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OCR Scan
transistor 5d marking FR PNP SOT323 pnp transistor 313 5H MARKING
Abstract: BC807W, BC808W PNP Silicon AF Transistors 3 â'¢ For general AF applications â'¢ High , -28-2005 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter , breakdown voltage BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W , Feb-28-2005 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified , , f = 1 MHz 3 Feb-28-2005 BC807W, BC808W Permissible Pulse Load RthJS = f (tp) Total Infineon Technologies
Original
Abstract: BC807W, BC808W PNP Silicon AF Transistors For general AF applications High collector current , Resistance 1 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless , 250 40 160 250 350 250 400 630 0.7 1.2 V BC807W BC808W V(BR)CBO BC807W BC808W V(BR)EBO 50 30 5 - 1) Pulse test: t 300µs, D = 2% 2 Nov-29-2001 BC807W, BC808W Electrical , -29-2001 BC807W, BC808W Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 300 Infineon Technologies
Original

MARKING 5ct

Abstract: BC807W / BC808W BC807W / BC808W PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation ­ Verlustleistung 2±0.1 0.3 3 PNP 200 mW SOT-323 0.01 g Version 2010-05-21 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse , 5V 200 mW 1) 500 mA 1A 1A 200 mA -55.+150°C -55.+150°C BC808W 30 V 25 V Characteristics (Tj = , Semiconductor AG 1 BC807W / BC808W Characteristics (Tj = 25°C) Min. Base-Emitter-voltage ­
Diotec
Original
MARKING 5ct UL94V-0 BC807-16 BC808-16 BC807-25 BC808-25 BC807-40
Abstract: BC807W, BC808W PNP Silicon AF Transistors · For general AF applications · High collector current · , , BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values , 40 160 250 350 250 400 630 0.7 1.2 IEBO 100 ICBO 50 ICBO 100 BC807W BC808W V(BR)EBO BC807W BC808W V , = 2% 2 Feb-28-2005 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless , V, f = 1 MHz Ceb 60 Ccb 10 fT 200 typ. max. Unit MHz pF 3 Feb-28-2005 BC807W, BC808W Infineon Technologies
Original

5Cs transistor

Abstract: 5BS transistor base current Total power dissipationTS 79 °C BC807, BC808 TS 130 °C BC807W, BC808W Junction , 100 200 mW mA 150 -65 . 150 Value 215 80 °C Unit K/W BC807, BC808 BC807W, BC808W , Ptot = (TS) BC807W, BC808W 360 300 mW mW 300 270 250 225 P tot 240 210 180 150 120 , (tp) BC807W, BC808W 10 3 K/W 10 2 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 , ) BC807W, BC808W 10 3 P totmax/P totDC - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1
Infineon Technologies
Original
5Cs transistor 5BS transistor package marking 5as 5as package transistor 5bs BC817 BC818 BC808-40

transistor 5cs

Abstract: marking 5Cs BC807, BC808 330 TS 130 °C BC807W, BC808W 250 Junction temperature Tj Storage , °C -65 . 150 Value BC807, BC808 215 BC807W, BC808W Unit K/W 80 1For , , BC808W 360 300 mW mW 225 P tot 250 270 P tot 300 240 200 210 , , BC808W Ptotmax/P totDC = (tp) BC807W, BC808W 10 3 10 3 P totmax/P totDC K/W RtthJS
Infineon Technologies
Original
transistor 5cs 5cs 13

2N2907 SOT-23

Abstract: 1N4004 SOD-123 BC808 BC817 BC818 BC807W BC808W BC817W BC818W 0CX68 BCX69 BCV28 BCV48 BCV29 BC846W BC847W BC843W BC849W
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OCR Scan
2N3563 2N6616 BC8488 P2T2222 BAT16-046 BCS59 2N2907 SOT-23 1N4004 SOD-123 BC517 "cross reference" 1N4148 SOD-323 A 1N4001 1N4002 1N4003 1N4004 1N40Q1 1N4148
Abstract: , BC807W, BC808W 250 Junction temperature Tj Storage temperature Tstg Thermal Resistance , , BC808 ≤ 215 BC807W, BC808W Unit K/W ≤ 80 1For calculation of R thJA please refer to Infineon Technologies
Original
BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W

5Cs transistor

Abstract: BC 170 transistor ; BC808W FEATURES · High current · S- mini package. PIN CONFIGURATION DESCRIPTION PNP transistor , DESCRIPTION base emitter collector QUICK REFERENCE DATA SYMBOL BC807W: BC807-16W BC807-25W BC807-40W BC808W , . UNIT VcES collector-emitter v oe = o voltage BC807W BC808W collector-emitter open base voltage BC807W BC808W peak collector current total power dissipation DC current gain transition frequency up to T , Semiconductors Product specification PNP general purpose transistor BC807W; BC808W LIMITING VALUES In
Siemens
Original
Q62702-C2328 BC 170 transistor TRANSISTOR BC 807w Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2329 Q62702-C2330
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