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Part : BC808-25LT1G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 16,301 Best Price : $0.0290 Price Each : $0.14
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Part : BC80840MTF Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : - Best Price : $0.0240 Price Each : $0.0350
Part : BC80840MTF Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 2,362 Best Price : $0.0450 Price Each : $0.24
Part : BC808-25LT1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 36,000 Best Price : $0.03 Price Each : $0.04
Part : BC808-25LT1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 393,000 Best Price : $0.02 Price Each : $0.02
Part : BC808-40LT1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 402,000 Best Price : $0.04 Price Each : $0.05
Part : BC808-40LT1G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 48,000 Best Price : $0.04 Price Each : $0.05
Part : BC80816MTF Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 14,017 Best Price : $0.07 Price Each : $0.09
Part : BC80825MTF Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 15,000 Best Price : $0.04 Price Each : $0.05
Part : BC80840MTF Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 21,383 Best Price : $0.04 Price Each : $0.05
Part : BC808-40LT1 Supplier : Motorola Manufacturer : America II Electronics Stock : 1,456 Best Price : - Price Each : -
Part : BC808-40LT1 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 6,000 Best Price : $0.0525 Price Each : $0.2625
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Part : BC808-25 Supplier : Diotec Manufacturer : TME Electronic Components Stock : 2,230 Best Price : $0.0118 Price Each : $0.0295
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Part : BC808-25LT1G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 2,900 Best Price : $0.0241 Price Each : $0.0446
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Part : BC808-25LT1G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 16,301 Best Price : $0.03 Price Each : $0.1740
Part : BC80840MTF Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,362 Best Price : $0.03 Price Each : $0.1910
Part : BC80840MTF Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 2,362 Best Price : $0.03 Price Each : $0.1910
Part : BC808-25LT1G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 16,571 Best Price : £0.0336 Price Each : £0.1220
Part : BC80840MTF Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 2,907 Best Price : £0.0270 Price Each : £0.0574
Part : BC808-25LT1G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 13,200 Best Price : $0.02 Price Each : $0.03
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BC808 Datasheet

Part Manufacturer Description PDF Type
BC808 AUK PNP Silicon Transistor (High current application Switching application) Original
BC808 Continental Device India Surface mount Si-Epitaxial PlanarTransistors Original
BC808 Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC808 Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BC808 Fairchild Semiconductor Switching and Amplifier Applications Original
BC808 General Semiconductor Small Signal Transistors (PNP) Original
BC808 Infineon Technologies PNP Silicon AF Transistors Original
BC808 Kexin PNP Silicon AF Transistors Original
BC808 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC808 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
BC808 Rectron Semiconductor Original
BC808 Siemens Cross Reference Guide 1998 Original
BC808 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC808 TY Semiconductor TY Equivalent - PNP Silicon AF Transistors - SOT-23 Original
BC808 Zetex Semiconductors TRANS GP BJT PNP 25V 0.5A 3SOT-23 Original
BC808 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan
BC808 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BC808 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BC808 N/A Transistor Shortform Datasheet & Cross References Scan
BC808 N/A Shortform Transistor PDF Datasheet Scan
Showing first 20 results.

BC808

Catalog Datasheet MFG & Type PDF Document Tags

transistor 5cp

Abstract: 5Bp transistor -16; BC808-16 BC807-25; BC808-25 BC807-40; BC808-40 DC current gain base-emitter voltage collector , NUMBER BC807 BC807-16 BC807-25 BC807-40 MARKING CODE 5Dp 5Ap 5Bp 5Cp TYPE NUMBER BC808 BC808-16 BC808-25 BC808-40 MARKING CODE 5Hp 5Ep 5Fp 5Gp T o p V ie w 1 2 MAM 256 Fig. 1 Simplified , gain; typical values. BC807-40; BC808-40 Fig.4 DC current gain; typical values. 1997 Feb 28 , High current (max. 500 mA) · Low voltage (max. 45 V). BC807; BC808 PINNING PIN 1 2 3 base emitter
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OCR Scan
transistor 5cp 5Bp transistor 5Cp transistor 5DP transistor sot23 5bp 5bp sot23 BC817 BC818

BC808

Abstract: code marking 5Cp sot-23 Marking code: BC807 = 5Dp BC807-16 = 5Ap BC807-25 = 5Bp BC807-40 = 5Cp BC808 = 5Hp BC808-16 = 5Ep BC808-25 = 5Fp BC808-40 = 5Gp 0.48 7Z96888. T Reverse pinning types are available on request. October 1993 , -lG = 500mA;-VCE = 1 V -lC = 100 mA; -VcE = 1 V; BC807; BC808 BC807-1 BC808- BC807-25 BC808-25 BC807-40 BC808-40 Transition frequency at f = 100 MHz -lC = 10 mA; â'"VqE = 5 V Collector capacitance at f = 1 , 711005b 00bfl405 755 HPHIN BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a
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OCR Scan
code marking 5Cp sot-23 BC817R 5Cp SOT23 bc818r T10102 12p sot-23 MBB01S
Abstract: Base, 2 = Emitter, 3 = Collector. Type Marking BC807-16 -25 -40 5A 5B 5C BC808-16 , BC807, BC808 Small Signal Transistors (PNP) FEATURES SOT-23 ♦ PNP Silicon Epitaxial , Collector-Emitter Voltage BC807 BC808 - V ces - V ces 50 30 V V Collector-Emitter Voltage BC807 BC808 - V ceo - V CEO 45 25 V V Emitter-Base Voltage - V e bo 5 V , eneral S e m ic o n d u c t o r BC807, BC808 ELECTRICAL CHARACTERISTICS Ratings at 25 °C a m b ie -
OCR Scan

BC807

Abstract: BC808 ; BC808-16L = 5E; BC808-25L = 5F; BC808-40L = 5G Characteristic Symbol Max Unit Total Device Dissipation , 'CBO - - '.00 5.0 nA ON CHARACTERISTICS DC Current Gain flC = 100 mA, Vce = 1.0 V) BC807-16L BC808-16L BC807-25L BC808-25L BC807-40L BC808-40L dC = 500 mA, VCE = 1.0 V) hFE 100 160 250 40 - 250 400 600 , ,Tstq -55 to +150 °C I b3b?ES4 [1005002 ô I BC807-16L, -25L, -40L T-Xl-OJ BC808-16L, -25L, -40L CASE , MOTOROLA SC XSTRS/R F MAXIMUM RATINGS 1EE D Rating Symbol BC807 BC808 Unit Collector-Emitter
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OCR Scan
150X1

5HP ibm

Abstract: BC808-16 TYPE NUMBER 2 MARKING CODE BC807 5Dp BC808 5Ap BC808-16 5Bp BC808-25 5Fp BC807-40 5Cp BC808-40 MAM256 5Ep BC807-25 2 Top view 5Hp BC807 , ; note 1 see Figs 2, 3 and 4 100 - 600 BC807-16; BC808-16 100 - 250 BC807-25; BC808-25 160 - 400 BC807-40; BC808-40 250 - 600 40 - - - - -700 , V 200 150 100 50 0 10-1 1 10 BC807-16; BC808-16. Fig.2 DC current gain
Philips Semiconductors
Original
5HP ibm M3D088 SCA53

BC808-16R

Abstract: bcb07 BC808-16 J BC807-25 L BC808-25 f BC807-40 I BC808-40 ) Transition frequency at f = 35 MHz -lc= 10 mA , = 5 CR BC808-16R = 5 ER -25R= 5 FR -40R= 5 GR 3 R-types are available on request. July 1987 149 This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE BC807 BC808 ObE D , N AMER PHILIPS/DISCRETE ObE D 1^53^31 0015503 S BC807 BC808 SILICON PLANAR EPITAXIAL , frequency at f = 35 MHz -lc= 10 mA; -Vce = 5V BC807 BC808 -VcES max. 50 30 V -VcEO max. 45 25 V
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OCR Scan
BC807-16R bcb07 sot-23 npn marking code cr sot-23 Marking 25R MARKING tAN SOT-23 sot23 marking code tab 7Z88078 0015S07

BC807C

Abstract: -16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808 40 = = = = = = = = 5Dp 5Ap 5Bp 5Cp 5Hp 5Ep 5Fp 5Gp , - Ic = 100 m A ; - V CE = 1 V ; BC807; BC808 BC807-16 I BC808-16 ) B C 8 0 7 25 I BC808-25 I BC807-40 | BC808-40 ) T ra n sition frequency at f = 100 MHz - I q = 10 m A ; - V q E = 5 V C o lle ctor , BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, In a SO T-23 plastic , Vceo - ' cm ^ to t Ti *T m ax' rnax. max. max. max. 50 45 1000 250 150 80 BC808 30 V 25 V mA mW °C MHz
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BC807C

code marking 5Cp sot-23

Abstract: bc807 code: BC807 = 5Dp BC807-16 = 5Ap BC807-25 = 5Bp BC807-40 = 5Cp BC808 = 5Hp BC808-16 = 5Ep BC808-25 = 5Fp BC808-40 = 5Gp H-lo.2® a|b| 7 1.4 2.5 1.2 max Reverse pinning types are available on , hFE min. 40 -lc = 100 mA; -VCE = 1 V; BC807; BC808 hFE 100 to 600 BC807-16 I BC808-16 I hFE 100 to 250 BC807-25 I BC808-25 i hFE 160 to 400 BC807-40 I BC808-40 j hFE 250 to 600 Transition , ï»¿â  bbSB^ai 002443^ 071 MARX N AUER PHILIPS/DISCRETE b7E J> BC807 BC808 SILICON PLANAR
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OCR Scan
0DS4440 IEC134

marking code 02 5X SOT23

Abstract: BC808 BC808-25LT1, BC808-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features , : BC808-25LT1/D BC808-25LT1, BC808-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC808-25 BC808-40 (IC = -500 mA, VCE = , -10 V, f = 1.0 MHz) ORDERING INFORMATION Device Package BC808-25LT1G BC808-40LT1G 5G , BC808-25LT1, BC808-40LT1 1000 hFE , DC CURRENT GAIN VCE = -1.0 V TA = 25°C 100 10 -0.1
ON Semiconductor
Original
marking code 02 5X SOT23 BC808-25LT1/D
Abstract: BC808-25LT1, BC808-40LT1 General Purpose Transistors PNP Silicon Features http://onsemi.com , 1 2 SOT-23 CASE 318 STYLE 6 1 x D = F = BC808-25LT1 = G = BC808-40LT1 = Date Code 3 5xD 2 THERMAL , /D BC808-25LT1, BC808-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) fT Cobo 100 - - 10 - -0.7 MHz pF VCE(sat) VBE(on) hFE BC808-25 BC808-40 160 250 40 - - - - - - - 400 , V V V Symbol Min Typ Max Unit DEVICE ORDERING INFORMATION Device BC808-25LT1 BC808-40LT1 Package ON Semiconductor
Original

BC808-40 spice

Abstract: BBC817 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 JUNE 1996 PARTMARKING DETAILS BC807 5DZ BC807-16 5AZ BC807-25 5BZ BC807-40 5CZ BC807 BC808 BC808 5HZ BC808-16 5EZ BC808-25 5FZ BC808-40 5GZ COMPLEMENTARY TYPES BC807 BC808 E C B BC817 BC818 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC807 BC808 UNIT Collector-Base Voltage VCBO -50 -30 V Collector-Emitter Voltage VCEO -45 -25 Emitter-Base Voltage VEBO
Zetex Semiconductors
Original
BC808-40 spice BBC817

MARKING 1B SOT23

Abstract: 1B SOT23 =E 3=C SOT23 BC808-16 5Es 1=B 2=E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC807 BC808 VCEO 45 25 , BC807, BC808 PNP Silicon AF Transistors 3 For general AF applications High , Thermal Resistance 1 Nov-29-2001 BC807, BC808 Electrical Characteristics at TA = 25°C, unless
Infineon Technologies
Original
MARKING 1B SOT23 1B SOT23 5As SOT23 5cs sot23 1B marking marking 5Cs EHP00210 EHP00212 EHP00213 EHP00214 EHP00215 EHP00216
Abstract: =E 3=C SOT23 BC808-16 5Es 1=B 2=E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BC807 BC808 VCEO 45 25 , BC807, BC808 PNP Silicon AF Transistors 3 #1; For general AF applications #1; High , Thermal Resistance 1 Aug-20-2001 BC807, BC808 Electrical Characteristics at TA = 25°C, unless Infineon Technologies
Original

bc807-25-gs08

Abstract: 0103ma -40-GS08 5C Tape and Reel BC808-16 BC808-16-GS08 5E Tape and Reel BC808-25 BC808-25-GS08 5F Tape and Reel BC808-40 BC808-40-GS08 5G Tape and Reel Absolute Maximum Ratings , BC807 to BC808 Vishay Semiconductors Small Signal Transistors (PNP) Features · PNP Silicon , Symbol Value Unit - VCES 50 V - VCES 30 V BC807 - VCEO 45 V BC808 Collector - emitter voltage (Base open) Part BC807 BC808 Collector - emitter voltage (Base shorted
Vishay Semiconductors
Original
bc807-25-gs08 0103ma BC807-25-G BC807-40-G bc807-40-gs08 4501 ic BC807-16-GS08 BC807-25-GS08 BC807-40-GS08 88/540/EEC 91/690/EEC D-74025

BC807

Abstract: BC807-16 configuration 1 = Base, 2 = Emitter, 3 = Collector. Type BC807-16 -25 -40 BC808-16 -25 -40 Marking , BC807, BC808 Small Signal Transistors (PNP) FEATURES PNP Silicon Epitaxial Planar Transistors , temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC807 BC808 ­VCES ­VCES 50 30 V V Collector-Emitter Voltage BC807 BC808 ­VCEO ­VCEO 45 25 , fiberglass substrate, see layout 4/98 BC807, BC808 ELECTRICAL CHARACTERISTICS Ratings at 25 °C
General Semiconductor
Original
npn transistors,pnp transistors marking 5A

smd transistor 5c sot-23

Abstract: smd transistor 5d sot-23 -23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P transistor Marking BC807 = 5D BC807­16 = 5A BC807­25 = 5B BC807-40 = 5C BC808 = 5H BC808­16 = 5E BC808­25 = 5F BC808­40 , 100 to 600 BC807­16 BC808­16 hFE 100 to 250 BC807­25 BC808­25 hFE 160 to 400 BC807­40 BC808­40 hFE 250 to 600 fT > Cc typ. Transition frequency at f = 100 MHz , ­VCE0 ­ICM Ptot Tj max. max. max. max. max. fT > BC807 50 45 BC808 30 V 25 V
Continental Device India
Original
smd transistor 5c sot-23 smd transistor 5d sot-23 SMD TRANSISTOR MARKING 5H smd 5H transistor SMD TRANSISTOR MARKING 5c bc807 5g smd transistor C-120
Abstract: -16 I BC808-16 I hpF 100 to 250 BC807-25 l BC808-25 l hFE 160 to 400 BC807-40 l BC808-40 ) Transition frequency at f =35 M Hz â'" I q = 10 mA; â'"V q E = 5 V hpE 250 to 600 , N^AMER PHILIPS/DISCRETE ObE D â  fc.b53T31 0015503 3 BC807 BC808 r - x v n SILICON , ; R and BC8f 8; R respectively. Q U IC K R E F E R E N C E D A T A BC807 BC808 -V c E S max , -16 = 5 A -25 = 5 B July 1987 149 N AMER PHILIPS/DISCRETE BC807 BC808 ObE D bb53T31 -
OCR Scan
53T31 7Z88080 QD15SQ7
Abstract: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTMARKING DETAILS BC807 -5 D Z BC807-16-5A2 BC807-25 - 5BZ BC807-40 - 5CZ _ « / BC808 - 5HZ BC808-16-5EZ BC808-25-5FZ BC808-40 - 5GZ 3 E B COMPLEMENTARY TYPES BC807 BC808 - BC817 BC818 SOT23 ABSOLUTE MAXIMUM RATINGS. BC807 BC808 UNIT V CBO -50 -30 V VcEO PARAMETER -45 -25 V SYMBOL Collector-Base Voltage -
OCR Scan

BC807

Abstract: BC807-16 5A BC808-16 = 5E Codes: -25 = 5B -25 = 5F -40 = 5C -40 = 5G Packaging Codes/Options: E8/10K , BC807, BC808 Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4 , ) BC807 BC808 Collector-Emitter Voltage (Base open) BC807 BC808 Emitter-Base Voltage , page. 2/7/01 BC807, BC808 Small Signal Transistors (PNP) Electrical Characteristics (T = , pF Collector-Emitter Cutoff Current BC807 BC808 Emitter-Base Cutoff Current ­ICES
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Original

8C808

Abstract: bc807 BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G Pin , = 100 mA; -VCE = 1 V; BC807; BC808 hFE 100 to 600 BC807-16 BC808-16 â'¢hFE 100 to 250 BC807-25 BC808-25 hFE 160 to 400 BC807-40 BC808-40 hFE 250 to 600 Transition frequency at f = 100 MHz , mW Ti max. 150 °C fT 80 MHz 19 BC807 BC808 RATINGS (at Ta = 25°C unless otherwise
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OCR Scan
8C808 BC807 5C
Abstract: BC807, BC808 PNP Silicon AF Transistors 3 â'¢ For general AF applications â'¢ High , =E 3=C SOT23 BC808-25 5Fs 1=B 2=E 3=C SOT23 BC808-40 5Gs 1=B 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol BC807 BC808 Collector-emitter , calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-28-2005 BC807, BC808 , - - BC808 25 - - BC807 50 - - BC808 IC = 10 mA, IB = 0 30 - Infineon Technologies
Original

9FC SOT23

Abstract: BC807 BC807/BC808 BC807/BC808 Switching and Amplifier Applications 3 · Suitable for AF-Driver , Symbol VCES Value Units : BC807 : BC808 -50 -30 V V : BC807 : BC808 VCEO , Collector-Emitter Breakdown Voltage : BC807 : BC808 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC807 : BC808 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE , -100 -100 100 60 nA nA 630 100 MHz 12 pF Rev. A1, June 2001 BC807/BC808
Fairchild Semiconductor
Original
9FC SOT23 BC807/BC808 BC817/BC818
Abstract: MCC TM Micro Commercial Components BC808-16 BC808-25 BC808-40 #1;#2;#3;#4;#5;#6;#7;#5;#8;#8; #4;#3;#2; , Marking: BC808-16 5E BC808-25 5F BC808-40 5G A D 3 C Electrical Characteristics @ 25OC , (BR)EBO ICBO IEBO hFE(2) V CE(sat) V BE DC Current Gain (IC=-100mAdc, V CE=-1.0Vdc) BC808-16 BC808-25 BC808-40 DC Current Gain (IC=-300mAdc, V CE=-1.0Vdc) Collector-Emitter Saturation Voltage , .950 .037 .950 w w w.m c c se m i.c om Revision: B 1 of 3 201 3 /0 1 /0 1 MCC BC808 -
Original
MIL-STD-202
Showing first 20 results.