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Part : BC807W,115 Supplier : Nexperia Manufacturer : Avnet Stock : 54,000 Best Price : $0.0088 Price Each : $0.0140
Part : BC807W,115 Supplier : Nexperia Manufacturer : Avnet Stock : 78,000 Best Price : €0.0090 Price Each : €0.0180
Part : BC807W,115 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : $0.0083 Price Each : $0.0091
Part : BC807W,135 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : BC807W,135 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : €0.0090 Price Each : €0.0180
Part : BC807W,135 Supplier : Nexperia Manufacturer : Avnet Stock : - Best Price : $0.0083 Price Each : $0.0091
Part : BC807W,115 Supplier : Nexperia Manufacturer : Future Electronics Stock : 57,000 Best Price : $0.0086 Price Each : $0.0093
Part : BC807W115 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 66,000 Best Price : $0.03 Price Each : $0.04
Part : BC807W Supplier : Philips Semiconductors Manufacturer : America II Electronics Stock : 2,996 Best Price : - Price Each : -
Part : BC807W Supplier : NXP Semiconductors Manufacturer : America II Electronics Stock : 69,000 Best Price : - Price Each : -
Part : BC807W,115 Supplier : NXP Semiconductors Manufacturer : Bristol Electronics Stock : 3,000 Best Price : - Price Each : -
Part : BC807W/116 Supplier : Philips Semiconductors Manufacturer : basicEparts Stock : 8,600 Best Price : - Price Each : -
Part : BC807W Supplier : NXP Semiconductors Manufacturer : ComSIT Stock : 15,000 Best Price : - Price Each : -
Part : BC807W Supplier : Philips Semiconductors Manufacturer : Chip One Exchange Stock : 13,086 Best Price : - Price Each : -
Part : BC807W,115 Supplier : Nexperia Manufacturer : Chip1Stop Stock : 42,000 Best Price : $0.0137 Price Each : $0.0207
Part : BC807W,115 Supplier : Nexperia Manufacturer : Chip1Stop Stock : 36,000 Best Price : $0.0166 Price Each : $0.0220
Part : BC807W,115 Supplier : Nexperia Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.0180 Price Each : $0.0180
Part : BC807W,115 Supplier : Nexperia Manufacturer : New Advantage Stock : 48,000 Best Price : $0.02 Price Each : $0.02
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BC807W Datasheet

Part Manufacturer Description PDF Type
BC807W Diotec Surface mount Si-Epitaxial PlanarTransistors Original
BC807W Galaxy Semi-Conductor Holdings PNP Silicon Epitaxial Planar Transistor Original
BC807W Infineon Technologies PNP Silicon AF Transistors Original
BC807W NXP Semiconductors BC807W - 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V Original
BC807W Philips Semiconductors Surface mount Si-Epitaxial PlanarTransistors Original
BC807W Philips Semiconductors PNP General Purpose Transistor Original
BC807W Siemens Cross Reference Guide 1998 Original
BC807W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC807-W N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BC807-W N/A Shortform Data and Cross References (Misc Datasheets) Scan
BC807W,115 NXP Semiconductors 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd Original
BC807W,135 NXP Semiconductors 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 (SC-70); Container: Tape reel smd Original
BC807WT/R NXP Semiconductors 45 V, 500 mA PNP general purpose transistors - Complement: BC817W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; I<sub>C</sub> max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V Original
BC807WTR Philips Semiconductors PNP general purpose transistor Original
BC807WT/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

BC807W

Catalog Datasheet MFG & Type PDF Document Tags

transistor c32725

Abstract: c32725 data sheet CPCN200302007F CPCN200405006F BC807_4; BC807W_3; BC327_3 BC807_4 20040116 Product specification - BC807_3 BC807W_3 19990518 Product specification - BC807W_808W_CNV_2 , BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 - 17 November 2009 , - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337 , ; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807-25; BC807
NXP Semiconductors
Original
transistor c32725 c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor BC807-25W BC327-25 BC807-40 BC807-40W BC327-40

BC807W

Abstract: BC808W BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W -VCBO -VCEO Emitter Base Voltage Value 50 30 45 25 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 12/01/2006 BC807W , hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V
Semtech Electronics
Original

5Ct transistor

Abstract: transistor 5bt High current (max. 500 mA) Low voltage (max. 45 V). BC807W; BC808W PINNING PIN 1 2 3 base emitter , transistor in a SOT323 plastic package. NPN complements: BC817W and BC818W. MARKING TYPE NUMBER BC807W , ) and symbol. QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BC807W BC808W collector-emitter voltage BC807W BC808VV peak collector current total power dissipation DC current gain transition , the Absolute Maximum Rating System (IEC 134). BC807W; BC808W SYMBOL V CBO PARAMETER
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OCR Scan
5Ct transistor transistor 5bt transistor 5ct transistor marking 297 BC807W BC808W BC808-16W BC808-25W BC808-40W 1997J WBH71 BCB08-40W
Abstract: transistor FEATURES BC807W; BC808W PIN CONFIGURATION â'¢ High current â'¢ S- mini package , PARAMETER collector-emitter voltage CONDITIONS MIN. MAX. UNIT < S ii o SYMBOL BC807W: BC807-16W 5A BC807-25W 5B BC807W - -50 V BC807-40W 5C BC808W - -30 , BC807W - -45 V BC808-40W 5G BC808W - -25 V - -1 A - 200 mW , specification BC807W; BC808W LIMITING VALUES In accordance with the Absolute Maximum System (I EC 134). -
OCR Scan

BC807W

Abstract: BC808W BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W -VCBO -VCEO Emitter Base Voltage Value 50 30 45 25 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 23/02/2006 BC807W , hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V
Semtech Electronics
Original
Abstract: BC807W; BC808W PIN CONFIGURATION â'¢ High current â'¢ S- mini package. DESCRIPTION PNP , PARAMETER BC807-25W 5B 5C BC808W MIN. BC807W BC807-40W VcES g 5A CONDITIONS II BC807-16W collector-emitter voltage MAX. UNIT o 5D > BC807W: -5 0 V , voltage BC808-25W 5F BC807W BC808-40W 5G BC808W - -2 5 V Icm peak , BC807W; BC808W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL -
OCR Scan

transistor c32725

Abstract: c32725 Supersedes BC807_4; BC807W_3; BC327_3 · The format of the data sheet has been redesigned to comply , is a combination of the previous data sheets BC807_4, BC807W_3 and BC327_3. · · · · · · · , added BC807_4 20040116 Product specification - 9397 750 12393 BC807_3 BC807W_3 19990518 Product specification - 9397 750 05954 BC807W_808W_ CNV_2 BC327_3 19990415 , BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 05 - 21 February 2005
Philips Semiconductors
Original
BC327 C327 C32740 PNp transistor c32716 c32725 transistor transistor c32740 c32740 transistor

C32725 NPN transistor

Abstract: C32740 NPN transistor ': updated 20050221 Product data sheet CPCN200302007F CPCN200405006F BC807_4; BC807W_3; BC327_3 BC807_4 20040116 Product specification - BC807_3 BC807W_3 19990518 Product specification - BC807W_808W_CNV_2 BC327_3 19990415 Product specification - BC327 , BC807; BC807W; BC327 45 V, 500 mA PNP general-purpose transistors Rev. 06 â'" 17 November 2009 , - BC817 BC807W SOT323 SC-70 BC817W BC327[1] SOT54 (TO-92) SC-43A BC337
NXP Semiconductors
Original

marking 5bs

Abstract: BC807-16W BC807W, BC808W PNP Silicon AF Transistors 3 For general AF applications High , to Application Note Thermal Resistance 1 Nov-29-2001 BC807W, BC808W Electrical , BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W 30 - - V , ) Pulse test: t 300µs, D = 2% 2 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA , Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 3 Nov-29-2001 BC807W, BC808W Permissible Pulse
Infineon Technologies
Original
VSO05561 marking 5bs 3CMA marking 5Cs EHP00213 EHP00210 EHP00216 EHP00214 EHP00215

5B marking transistor

Abstract: BC807-16W BC807W FEATURES Pb High current(max.500mA) Lead-free Low voltage. Complements the BC817W , . Marking Package Code BC807W 5A/5B/5C SOT-323 MAXIMUM RATING @ Ta=25 unless otherwise , Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC807W ELECTRICAL , Production specification BC807W www.galaxycn.com 3 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC807W PACKAGE OUTLINE Plastic surface mounted
BL Galaxy Electrical
Original
5B marking transistor BL/SSSTF044 100MH 3000/T

Transistor marking S

Abstract: BC807-16W transistor N AtlER PHILIPS/DISCRETE PIN CONFIGURATION BC807W; BC808W b?E J> FEATURES â'¢ High current , Top view MAM037 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA BC807W: 5D BC807-16W 5A , CONDITIONS MIN. MAX. UNIT VcES collector-emitter voltage BC807W BC808W VÅ" = 0 - -50 -30 V V VCEO collector-emitter voltage BC807W BC808W open base - -45 -25 V V 'cm peak collector current - -1 A Ptt total power , Product specification PNP general purpose transistor N AMER PHILIPS/DISCRETE LIMITING VALUES BC807W
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OCR Scan
Transistor marking S S3T31 002M443

BC807W

Abstract: BC808W BC807W / BC808W PNP Silicon Epitaxial Planar Transistors for general purpose and switching , Symbol BC807W BC808W BC807W BC808W Emitter Base Voltage -VCBO -VCEO Value 50 30 45 25 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/02/2006 BC807W , hFE 100 160 250 40 250 400 600 - - BC807W BC808W -V(BR)CBO 50 30 - V BC807W BC808W -V(BR)CEO 45 25 - V -V(BR)EBO 5 - V -VCEsat - 0.7 V
Semtech Electronics
Original
Abstract: Philips Semiconductors Product specification PNP general purpose transistor BC807W , : BC817W. 3 MARKING TYPE NUMBER MARKING CODE«1) TYPE NUMBER MARKING CODE«1) BC807W , purpose transistor BC807W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS , - |E = 0; VCB = -2 0 V; Tj = 150 °C I LO > C Û LU II II > o' BC807W , transistor 1999 M ay 18 BC807W 4 Philips S em iconductors P roduct specification PNP -
OCR Scan
MAM048
Abstract: '" BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j â'" â'" > â , : 5H BC808-16W 5E collector-emitter open base voltage BC808-25W 5F BC807W 5G BC808W MIN. BC807W BC807-40W BC808-40W V ces ii o 5D af* BC807W: BC808W , Philips Semiconductors Product specification PNP general purpose transistor BC807W; BC808W N , collector-emitter voltage BC807W -5 0 V BC808W V cE O _ - -3 0 V _ -4 5 V -
OCR Scan
53T31 0D24444 MRA947

marking 5b philips

Abstract: DISCRETE SEMICONDUCTORS BC807W PNP general purpose transistor Product specification Supersedes , mA) Low voltage (max. 45 V). BC807W PINNING PIN 1 2 base emitter collector DESCRIPTION , plastic package. NPN complement: BC817W. 3 ^= ^= 1 3 MARKING TYPE NUMBER BC807W BC807 , specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a BC807W PARAMETER , current gain BC807W BC807-16W BC807-25W BC807-40W DC current gain 100 100 160 250 600 250 400 600
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OCR Scan
marking 5b philips SCA64

BC807W

Abstract: BC817W . BC807W-16 BC807W-25 BC807W-40 MARK 1M 1N 1R Type Name 2008. 9. 2 Revision No : 0 1/2 BC807W h FE - I C COMMON EMITTER VCE =-1V Ta=100 C Ta=25 C Ta=-25 C 50 30 , SEMICONDUCTOR BC807W TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M Complementary to BC817W. B M D J 3 1 G A 2 MAXIMUM RATING (Ta=25) RATING UNIT Collector-Base Voltage VCBO -50 V
KEC
Original

5Ct transistor

Abstract: transistor 5ct 91 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W; BC808W PNP general , transistors BC807W; BC808W FEATURES PINNING · High current (max. 500 mA) PIN · Low voltage , TYPE NUMBER 2 MARKING CODE BC807W 5Dt BC808W BC807-16W 5At BC808-16W 1 , -30 V BC807W - -45 V BC808W - -25 V - -1 A Tamb 25 °C - 200 mW BC807W BC808W VCEO collector-emitter voltage ICM peak collector current
Philips Semiconductors
Original
transistor 5ct 91 Q 817 5ct 48 marking 5ft sp 40w SCA54

BC807W

Abstract: BC807W40 :100250 , 25:160400 , 40:250630 MARK SPEC TYPE. MARK BC807W-16 1M BC807W-25 1N BC807W-40 1R 2008. 9. 2 Revision No : 0 1/2 BC807W 2008. 9. 2 Revision No : 0 2/2 KEC , SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. BC807W EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES ·Complementary to BC817W. A M B M 2 J G D 1 3 MAXIMUM RATING (Ta=25) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
KEC
Original
BC807W40
Abstract: BC807W, BC808W PNP Silicon AF Transistors For general AF applications High collector current , Resistance 1 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless , 250 40 160 250 350 250 400 630 0.7 1.2 V BC807W BC808W V(BR)CBO BC807W BC808W V(BR)EBO 50 30 5 - 1) Pulse test: t 300µs, D = 2% 2 Nov-29-2001 BC807W, BC808W Electrical , -29-2001 BC807W, BC808W Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 300 Infineon Technologies
Original
Abstract: BC807W, BC808W PNP Silicon AF Transistors 3 â'¢ For general AF applications â'¢ High , -28-2005 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter , breakdown voltage BC807W 45 - - BC808W 25 - - BC807W 50 - - BC808W , Feb-28-2005 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified , , f = 1 MHz 3 Feb-28-2005 BC807W, BC808W Permissible Pulse Load RthJS = f (tp) Total Infineon Technologies
Original

301 marking code PNP transistor

Abstract: bc807 marking code DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC807W PNP general purpose , Product specification PNP general purpose transistor BC807W FEATURES PINNING · High current , TYPE NUMBER 1 MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC807W 5D BC807 , Semiconductors Product specification PNP general purpose transistor BC807W THERMAL CHARACTERISTICS , . UNIT collector cut-off current IEBO emitter cut-off current hFE DC current gain BC807W
Philips Semiconductors
Original
301 marking code PNP transistor bc807 marking code
Abstract: BC807W, BC808W PNP Silicon AF Transistors · For general AF applications · High collector current · , calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-28-2005 BC807W , 40 160 250 350 250 400 630 0.7 1.2 IEBO 100 ICBO 50 ICBO 100 BC807W BC808W V(BR)EBO BC807W BC808W V , = 2% 2 Feb-28-2005 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless , V, f = 1 MHz Ceb 60 Ccb 10 fT 200 typ. max. Unit MHz pF 3 Feb-28-2005 BC807W, BC808W Infineon Technologies
Original
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