BC807-16LT1G BC807-25LT1G BC807-40LT1G BC807-16LT1/D BC807-16 BC807-25 BC807-40

BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features · These Devices

BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features · These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg -55 to +150 °C Collector Current - Continuous 3 1 2 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM 5xx M G G 1 5xx = Device Code xx = A1, B1, or C M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 9 1 Publication Order Number: BC807-16LT1/D BC807-16LT1/D BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -50 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 100 160 250 40 - - - - 250 400 600 - Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC807-16 BC807-16 BC807-25 BC807-25 BC807-40 BC807-40 (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0.7 V Base -Emitter On Voltage (IC = -500 mA, IB = -1.0 V) VBE(on) - - -1.2 V fT 100 - - MHz Cobo - 10 - pF SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) ORDERING INFORMATION Device Package BC807-16LT3G BC807-16LT3G BC807-25LT3G BC807-25LT3G BC807-40LT3G BC807-40LT3G 5C 3000/Tape & Reel SOT-23 (Pb-Free) BC807-40LT1G BC807-40LT1G 10,000/Tape & Reel SOT-23 (Pb-Free) 5B1 3000/Tape & Reel SOT-23 (Pb-Free) BC807-25LT1G BC807-25LT1G 10,000/Tape & Reel SOT-23 (Pb-Free) 5A1 3000/Tape & Reel SOT-23 (Pb-Free) BC807-16LT1G BC807-16LT1G Shipping SOT-23 (Pb-Free) Specific Marking 10,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D BRD8011/D. http://onsemi.com 2 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-16LT1 BC807-16LT1 500 1 400 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 1 V 150°C 300 25°C 200 -55°C 100 0 0.001 0.01 150°C 25°C -55°C 0.1 0.01 1 0.1 IC/IB = 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.0 VBE(on), BASE-EMITTER VOLTAGE (V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.1 -55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 -55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 1 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS - BC807-16LT1 BC807-16LT1 -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/°C) Figure 5. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 6. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 4 -100 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-25LT1 BC807-25LT1 500 1 VCE = 1 V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 400 25°C 300 200 -55°C 100 0 0.001 0.01 150°C 25°C -55°C 0.1 0.01 1 0.1 IC/IB = 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 1.0 -55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 -55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.1 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 12. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 1000 1 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS - BC807-25LT1 BC807-25LT1 -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/°C) Figure 13. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 14. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 15. Capacitances http://onsemi.com 6 -100 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-40LT1 BC807-40LT1 1000 1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 1 V 900 150°C 800 700 600 500 25°C 400 300 -55°C 200 100 0 0.001 0.01 150°C 25°C -55°C 0.1 0.01 1 0.1 IC/IB = 10 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) 1.0 -55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 -55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current Figure 19. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.1 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 20. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 7 1000 1 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS - BC807-40LT1 BC807-40LT1 -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) V, TEMPERATURE COEFFICIENTS (mV/°C) Figure 21. Saturation Region 0 -1.0 -2.0 -1.0 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 22. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances http://onsemi.com 8 -100 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G TYPICAL CHARACTERISTICS - BC807-16LT1 BC807-16LT1, BC807-25LT1 BC807-25LT1, BC807-40LT1 BC807-40LT1 IC, COLLECTOR CURRENT (A) 1 1 mS 1S 100 mS 0.1 10 mS Thermal Limit 0.01 0.001 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 24. Safe Operating Area http://onsemi.com 9 100 BC807-16LT1G BC807-16LT1G, BC807-25LT1G BC807-25LT1G, BC807-40LT1G BC807-40LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 HE E 1 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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