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Part : BC635 Supplier : SPC Multicomp Manufacturer : Newark element14 Stock : 53,879 Best Price : $0.0530 Price Each : $0.1630
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Part : BC635ZL1 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 14,000 Best Price : $0.09 Price Each : $0.09
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Part : BC635 Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 54,879 Best Price : £0.0637 Price Each : £0.2230
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BC635 Datasheet

Part Manufacturer Description PDF Type
BC635 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC635 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BC635 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
BC635 Infineon Technologies TRANS GP BJT NPN 45V 1A 3TO-92 Original
BC635 Motorola High Current Transistors Original
BC635 NXP Semiconductors 45 V, 1 A NPN medium power transistors Original
BC635 On Semiconductor High Current Transistors Original
BC635 Philips Semiconductors NPN medium power transistors Original
BC635 Philips Semiconductors Small-signal Transistors Original
BC635 Siemens Cross Reference Guide 1998 Original
BC635 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BC635 Siemens Transistor / Diode Selection Guide Original
BC635 Siemens NPN Silicon AF Transistor Original
BC635 STMicroelectronics SMALL SIGNAL NPN TRANSISTOR Original
BC635 Various Russian Datasheets Transistor Original
BC635 Bharat Electronics Shortform Transistor Data Scan
BC635 Continental Device India Semiconductor Device Data Book 1996 Scan
BC635 Crimson Semiconductor Transistor Selection Guide Scan
BC635 Micro Electronics Silicon Transistors Scan
BC635 Micro Electronics Medium Power Amplifiers and Switches Scan
Showing first 20 results.

BC635

Catalog Datasheet MFG & Type PDF Document Tags

bc639

Abstract: BC635 ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for , Emitter Voltage Symbol BC635 BC637 BC639 BC635 BC637 BC639 Emitter Base Voltage VCBO , , Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC , 100 nA IEBO - 100 nA BC635 BC637 BC639 V(BR)CBO 45 60 100 - V BC635 BC637 BC639 V(BR)CEO 45 60 80 - V V(BR)EBO 5 - V VCE(sat) -
Semtech Electronics
Original
bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 BC639 collector

bc639

Abstract: BC637 ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for , Emitter Voltage Symbol BC635 BC637 BC639 BC635 BC637 BC639 Emitter Base Voltage VCBO , , Stock Code: 724) ® Dated : 15/03/2007 ST BC635 / BC637 / BC639 Characteristics at Ta = 25 OC , 100 nA IEBO - 100 nA BC635 BC637 BC639 V(BR)CBO 45 60 100 - V BC635 BC637 BC639 V(BR)CEO 45 60 80 - V V(BR)EBO 5 - V VCE(sat) -
Semtech Electronics
Original

bc635

Abstract: transistor C 639 W Qualification Support Click on a product for detailed qualification data Product BC635 BC635_D26Z BC635_D27Z BC635_D75Z BC635_L34Z BC635_NL back to top © 2007 Fairchild Semiconductor Products | Design Center , BC635_D26Z Full Production N/A TO-92 3 TAPE REEL BC635_D27Z Full Production N/A TO-92 3 TAPE REEL BC635_D75Z Full Production N/A TO-92 3 AMMO Line 1: $Y , (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) Line 2: BC635 Line 3: E C B BC635_L34Z
Fairchild Semiconductor
Original
transistor C 639 W BC635/637/639 BC636/638/640 BC637/BC639

bc637 motorola

Abstract: bc639 motorola BC635 BC637 BC639 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B , Junction Temperature Range Symbol VCEO v CBO vebo BC635 45 45 BC637 60 60 5.0 0.5 625 5.0 1.5 12 - 5 , ollector-E m itter Breakdown VoltageO) (Iq = 1 0 mAdc, Ib = 0) v (BR)CEO BC635 BC637 BC639 v (BR)CBO BC635 , S m all-S ign al Transistors, FETs and Diodes Device Data BC635 BC637 BC639 ELECTRICAL , Gain (1C = 5.0 mAdc, V q e = 2.0 Vdc) ( lc = 150 mAdc, V q e = 2.0 Vdc) hFE BC635 BC637 BC639 25 40 40
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bc637 motorola bc639 motorola

transistor C635

Abstract: c63516 information" added BC635_637_639_4 20011010 Product specification - 9397 750 08738 BC635_637_639_3 , : Marking codes Type number Marking code BC635 C635 BC635-16 C63516 BCP54 BCP54 , notice Doc. number Supersedes BC635_BCP54_ BCX54_6 20050225 Product data sheet CPCN200405029 9397 750 14039 BC635_637_639_4; BCP54_55_56_5; BCX54_55_56_4 · The format of the , Semiconductors. · This data sheet contains a type combination out of the previous data sheets BC635_637_639_4
Philips Semiconductors
Original
SC-43A BC636 SC-73 BCP51 BCX51 transistor C635 BD9397 C635 Philips c635 transistor C6351 BCX54-SOT89 SC-62

BC639

Abstract: BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application , ST BC635 VCER 45 V ST BC637 VCER 60 V ST BC639 VCER 100 V ST BC635 VCES 45 V ST BC637 VCES 60 V ST BC639 VCES 100 V ST BC635 , AVAILABLE C C BC635 / BC637 / BC639 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit hFE 25 - - BC635 hFE 40 250 - BC637/BC639 hFE 40 160 -
Bytes
Original

transistor C 639 W

Abstract: bc736 BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â'¢ Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS (Ta = 250C) Characteristic Symbol Rating Unit Collector Emitter Voltage: BC635 VcER 45 V at Rbe = 1Kohm BC637 60 V BC639 100 V Collector Emitter Voltage: BC635 VcES 45 V BC637 60 V BC639 100 V Collector Emitter Voltage: BC635 VCEO 45 V BC637 , BVceo lc = 10mA, Ib=0 :BC635 45 V :BC736 60 V :BC639 80 V Collector Cutoff Current
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transistor BC637 complement transistor 639 fa 506 TI 506 transistor I100O BC635/638 002SD

BC637

Abstract: BC639 BC635-16; BC637-16; BC639-16 100 250 - 500 DC current gain VCEsat collector-emitter , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium , Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES , BC635 - 45 V BC637 - 60 V - 100 V BC635 - 45 V BC637 - , power transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER
Philips Semiconductors
Original
BC638 BC640 BC639-10 bc639 philips bc637 philips MAM259 SCA63

bc639

Abstract: BC635 TRANSISTOR E C B BC635-10; BC637-10; BC639-10 BC635-16; BC637-16; BC639-16 coilector-emitter saturation voltage , PIN 1 2 3 BC635; BC637; BC639 DESCRIPTION base collector emitter 1 . ? | r \ 3 = M AM259 , V CBO PARAMETER collector-base voltage BC635 BC637 BC639 collector-emitter voltage BC635 BC637 , ). SYMBOL V CBO BC635; BC637; BC639 PARAMETER collector-base voltage BC635 BC637 BC639 , 150 +150 V V V V V V V A A UNIT VcEO collector-emitter voltage BC635 BC637 BC639 V ebo
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applications of Transistor BC639

BC635 TRANSISTOR E C B

Abstract: transistor C 639 W NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS TO-92 â'¢ Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic , BC635 : BC637 BC639 BC635 BC637 BC639 BC635 BC637 BC639 Emitter Base Voltage Collector , Voltage : BC635 : BC736 : BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain :BC635 : BC637/BC639 B V ceo Collector Emitter Saturation Voltage Base Emitter On Voltage
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BC635/638/640

BC639 collector

Abstract: transistor 639 BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS · Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS (TA =25t;) Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage BC635 BC637 BC639 BC635 BC637 BC639 BC635 BC637 BC639 , =25TC) Characteristic Coilector-Emitter Breakdown Voltage BC635 :BC736 :BC639 Collector Cut-off Current Emitter Cut-off Current DC Current Gain .BC635 :BC637/BC639 Collector Emitter Saturation Voltage Base
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640 TRANSISTOR NPN

639 TRANSISTOR PNP

Abstract: 638 transistor 10 mm BC635_BC640Rev_4 030106E Continental Device India Limited Data Sheet Page 1 of 5 , Test: Pulse Width < 300µs, Duty Cycle 2% µ BC635_BC640Rev_4 030106E Continental Device India , 645 gm/ pcs 2K 12.5" x 8" x 1.8" 2K 17" x 15" x 13.5" 32K 12.5 kgs BC635_BC640Rev_4 , BC635_BC640Rev_4 030106E Continental Device India Limited Data Sheet Page 4 of 5 Customer Notes , , Fax + 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com BC635_BC640Rev_4 030106E
Continental Device India
Original
639 TRANSISTOR PNP 638 transistor bc636 npn transistor BC639-BC640 NPN transistor 500ma TO-92 transistor bC640 OF CDIL BC635/BC636 BC637/BC638 BC639/BC640 C-120 BC640R

bc639

Abstract: BC635 TRANSISTOR E C B ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier , ST BC635 VCER 45 V ST BC637 VCER 60 V ST BC639 VCER 100 V ST BC635 VCES 45 V ST BC637 VCES 60 V ST BC639 VCES 100 V ST BC635 , company listed on the Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST BC635 , - BC635 hFE 40 250 - BC637/BC639 hFE 40 160 - hFE 25 - -
Semtech Electronics
Original
C 14M

bc639

Abstract: BC637 ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier , ST BC635 VCER 45 V ST BC637 VCER 60 V ST BC639 VCER 100 V ST BC635 VCES 45 V ST BC637 VCES 60 V ST BC639 VCES 100 V ST BC635 , Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST BC635 / BC637 / BC639 Characteristics at Tamb=25 oC Symbol Min. Typ. Max. Unit hFE 25 - - BC635 hFE 40
Semtech Electronics
Original

BC639

Abstract: BC639 18 INFORMATION THERMAL CHARACTERISTICS BC635RL1 TO­92 2000/Tape & Reel BC635ZL1 TO­92 2000 , BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 , ­92 2000/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639, BC639­16 ELECTRICAL
ON Semiconductor
Original
BC639ZL1 BC639RL1 BC639 18 bc637 050 226AA 2000/T 2000/A 16ZL1

bc639

Abstract: BC63x BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com COLLECTOR 2 3 BASE Symbol BC635 BC637 BC639 Collector-Base Voltage BC635 BC637 BC639 Emitter-Base Voltage , INFORMATION Device BC635RL1 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 (Pb-Free) Shipping 2000 , Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC635ZL1 BC637 BC639 , Order Number: BC635/D Semiconductor Components Industries, LLC, 2004 May, 2004 - Rev. 4 BC635
ON Semiconductor
Original
BC63x BC639-16ZL1

bc736

Abstract: transistor C 639 W BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â'¢ Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector Emitter Voltage BC635 VcER 45 V at RBe=1 Kohm : BC637 60 V BC639 100 V Collector Emitter Voltage BC635 VcES 45 V BC637 60 V BC639 100 V Collector Emitter Voltage BC635 VcEO 45 V BC637 , Collector-Emitter Breakdown Voltage BVceo lc=10mA, Ib=0 : BC635 45 V : BC736 60 V : BC639 80 V
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Abstract: BC635/637/639 BC635/637/639 Switching and Amplifier Applications â'¢ Complement to BC636/638 , 100 V V V : BC635 : BC637 : BC639 VCEO Value : BC635 : BC637 : BC639 VCES Parameter Collector-Emitter Voltage at RBE=1Kâ"¦ : BC635 : BC637 : BC639 45 60 80 V V V V , otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC637 : BC639 , =2V, IC=5mA VCE=2V, IC=150mA hFE3 : All : BC635 : BC637/BC639 : All Min. Typ. Max Fairchild Semiconductor
Original

BC639

Abstract: BC635 ­92 BC635ZL1 February, 2000 ­ Rev. 2 Shipping BC635RL1 © Semiconductor Components Industries, LLC, 2000 Package TO­92 2000 Units/Ammo Pack Publication Order Number: BC635/D BC635, BC637 , BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector ­ Emitter Voltage VCEO 45 60 , )CEO BC635 BC637 BC639 Vdc V(BR)CBO BC635 BC637 BC639 Emitter ­ Base Breakdown Voltage
ON Semiconductor
Original
BC635/D

BC640

Abstract: BC639 application note - BC639-10 63 160 BC635-16; BC637-16; BC639-16 100 250 - 500 DC current , BC635; BC637; BC639 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 80 , . UNIT open emitter BC635 - 45 V BC637 - 60 V - 100 V BC635 - , specification NPN medium power transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS SYMBOL Rth j-a , Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639
Philips Semiconductors
Original
BC639 application note

BC639

Abstract: BC 639 BC635 BC637 BC639 1 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B , Junction Temperature Range Symbol VCEO v CBO vebo BC635 45 45 BC637 60 60 5.0 0.5 625 5.0 1.5 12 - 5 , ollector-E m itter Breakdown VoltageO) (Iq = 1 0 mAdc, Ib = 0) v (BR)CEO BC635 BC637 BC639 v (BR)CBO BC635 , S m all-S ign al Transistors, FETs and Diodes Device Data BC635 BC637 BC639 ELECTRICAL , Gain (1C = 5.0 mAdc, V q e = 2.0 Vdc) ( lc = 150 mAdc, V q e = 2.0 Vdc) hFE BC635 BC637 BC639 25 40 40
Siemens
Original
Q68000-A3360 Q68000-A2285 Q68000-A3361 BC 639 bc63 complementary 637 638

transistor C 639 W

Abstract: transistor 639 BC635; BC637; BC639 PHILIPS INTERNATIONAL 5bE D 711002b 0045052 bTS «PHIN SILICON PLANAR EPITAXIAL , audio amplifiers. P-N-P complements are BC636, BC638 and BC640. QUICK REFERENCE DATA BC635 BC637 , Semiconductors. BC635; BC637; BC639 PHILIPS INTERNATIONAL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) SbE D 711Dfl2b DDM20S3 531 HPHIN " T-29-23 â  BC635 BC637 BC639 Collector-base , ;Vce = 2 V Transition frequency at f = 35 MHz lc= 10 mA;VCE = 5 V BC635; BC637; _BC639 â  711002b
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BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor bc 100 transistor BC 639 c F139B CB-76

BC639 philips

Abstract: BC639 BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 - 25 February 2005 , BC635 [2] SOT54 SC-43A BC636 BCP54 SOT223 SC-73 BCP51 BCX54 SOT89 SC , 150 mA 63 - 160 hFE selection -16 VCE = 2 V; IC = 150 mA 100 - 250 BC635 , - 25 February 2005 2 of 17 BC635; BCP54; BCX54 Philips Semiconductors 45 V, 1 A NPN , ] Package Name Description Version BC635 [2] SC-43A plastic single-ended leaded (through
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d 2923 NECC-C-002

BC639

Abstract: BC640 BC635/637/639 BC635/637/639 Switching and Amplifier Applications · Complement to BC636/638/640 , V V V : BC635 : BC637 : BC639 VCEO Value : BC635 : BC637 : BC639 VCES Parameter Collector-Emitter Voltage at RBE=1K : BC635 : BC637 : BC639 45 60 80 V V V V , noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC635 : BC736 : BC639 , =2V, IC=5mA VCE=2V, IC=150mA hFE3 : All : BC635 : BC637/BC639 : All Min. Typ. Max
Philips Semiconductors
Original
BC635 application note SCA53

bc736

Abstract: bc635 BC635; BC637; BC639 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 80 , . UNIT open emitter BC635 - 45 V BC637 - 60 V - 100 V BC635 - , specification NPN medium power transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS SYMBOL Rth j-a , - BC639-10 63 160 BC635-16; BC637-16; BC639-16 100 250 - 500 DC current , Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639
Fairchild Semiconductor
Original

bc639

Abstract: BC637 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium , Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES , BC635 45 V BC637 - 60 V BC639 - 100 V BC635 - 45 V BC637 , transistors BC635; BC637; BC639 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS , saturation voltage BC635-16; BC637-16; BC639-16 IC = 500 mA; IB = 50 mA - 500 mV VBE
Semtech Electronics
Original

bc639

Abstract: BC639 data BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 , ­92 2000/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639, BC639­16 ELECTRICAL , Voltage (1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 Collector­Emitter Zero­Gate
Philips Semiconductors
Original
BC639 data 24825 medium power transistors transistor BC640 SCA73

CTBC 635

Abstract: 635-16 BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS â'¢ Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS (T, = 25°C) Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635 : BC637 : BC639 Collector Emitter Voltage: BC635 : BC637 : BC639 Emitter Base Voltage Collector Current Peak Collector , 505 ELECTRONICS 7^142 DDSSDbM Sbb BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR
Continental Device India
Original
TBC635 CTBC 635 635-16 TBC635-16 63516 cbc635 TBC635R 020505E

transistor C639

Abstract: transistor C635 BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com , Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage 45 60 80 VCBO BC635 BC637 BC639 Emitter - Base Voltage 1 EMITTER Vdc Vdc 45 60 80 , : BC635/D BC635, BC637, BC639, BC639-16 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Collector - Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639
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transistor C639 c639 transistor C639 w
Showing first 20 results.