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BC557 pin out

Catalog Datasheet MFG & Type PDF Document Tags

pin configuration pnp transistor BC557

Abstract: pin configuration pnp transistor BC558 PULL - OUT FORCE All diminsions in mm. H F1 ITEM A PIN CONFIGURATION 1. COLLECTOR 2 , BC557, A, B, C BC558, A, B, C TO-92 Plastic Package PNP SILICON PLANAR EPITAXIAL TRANSISTORS , SYMBOL BC556 BC557 BC558 UNITS 65 80 80 5 45 50 50 5 100 200 200 200 500 , Limited Datasheet V 45 30 BC557 BC558 65 V V Page 1 of 5 PNP SILICON PLANAR , 80 V 50 30 BC557 BC558 Emitter Base Voltage BC556, A, B, C BC557, A, B, C BC558, A 		Continental Device India
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pin configuration pnp transistor BC557 pin configuration pnp transistor BC558 BC557 pin out pin configuration transistor BC557 pin configuration transistor bc558 transistor bc557 pins details ISO/TS16949 C-120

BC557

Abstract: BC556BG Collector - Emitter Voltage Value VCEO Vdc VCBO Vdc â'80 â'50 â'30 BC556 BC557 BC558 Emitter - Base Voltage 3 EMITTER â'65 â'45 â'30 BC556 BC557 BC558 Collector - , = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON , '100 mAdc, VCE = â'5.0 V) hFE A Series Device B Series Devices C Series Devices BC557 A Series 		ON Semiconductor
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BC556BG BC557 transistor pin details bc558b BC556B BC557A BC558B BC556B/D

pin configuration pnp transistor BC557

Abstract: pin configuration pnp transistor BC558 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC556, A, B, C BC557, A, B, C BC558, A, B, C TO , specified) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS 65 80 80 5 45 50 50 5 100 , Limited Datasheet V 45 30 BC557 BC558 65 V V Page 1 of 5 PNP SILICON PLANAR , 80 V 50 30 BC557 BC558 Emitter Base Voltage BC556, A, B, C BC557, A, B, C BC558, A , BC556 BC557 BC558 BC556 BC557 BC558 ICES VCE =80V VCE =50V VCE =30V VCE =80V,Tj=125O C 		Continental Device India
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BC557 pin description pin out TRANSISTOR bc557 information of BC558 uses of bc557 T1 BC558 BC557 equivalent

BC556B

Abstract: bc558b BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 , BC556B BC556BRL1 BC556BZL1 BC557 BC557ZL1 BC557A BC557AZL1 BC557B Package TO­92 TO­92 TO­92 TO­92 TO , BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES 		ON Semiconductor
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free BC557 BC557 TRANSISTOR application transistor BC556b 6885_BC556B BC557 application note transistor BC557 base collector emitter 2000/T 2000/A BC557BRL1 BC557BZL1 BC557C BC557CZL1

BC557/558

Abstract: free BC557 BC556, A, B, BC557, A, B, C BC558, A, B, C PNP SILICON PLANAR EPITAXIAL TRANSISTORS TO , VEBO IC ICM IBM IEM PD BC556 65 80 80 Derate Above 25ºC BC557 45 50 50 5 100 200 , Cut Off Current ICES VCE=80V, VBE=0 BC557 >45 >50 >5.0 , , BC557, A, B, C BC558, A, B, C PNP SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package C , =5V A B C MIN TYP MAX UNITS 90 150 270 IC=2mA, VCE=5V BC556 BC557/558 A B C 		Continental Device India
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BC557/558 bc556a BC558A bc557 to92 BC558 PNP transistor download datasheet BC556 CDIL 201205E

operation of BC557 TRANSISTOR

Abstract: BC557 pin out BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com , BC556 BC557 BC558 Collector-Base Voltage Vdc ­65 ­45 ­30 VCBO BC556 BC557 BC558 , Temperature Range 5000 Units/Box BC557AZL1 Watts mW/°C TO­92 BC557 1.5 12 Shipping , Order Number: BC556/D BC556B, BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25 , Leakage Current (VCES = ­40 V) (VCES = ­20 V) (VCES = ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 		ON Semiconductor
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operation of BC557 TRANSISTOR information of BC557 T2 BC558 TRANSISTOR BC558CZL1 BC558ZL1 BC558CRL1 BC558C BC558BZL1

BC557 transistor pin details

Abstract: transistor marking bc557 Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA , BC557 A Series Device B Series Devices C Series Devices A Series Device B Series Devices C Series 		ON Semiconductor
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transistor marking bc557 bc557bg BC557BRL1G pin diagram of transistor BC558 BC557BZL1G BC557 PNP TRANSISTOR

bc558b

Abstract: bc556b BC556B, BC557, A, B, C, BC558B, C Amplifier Transistors PNP Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BC556 BC557 BC558 Collector-Base Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Base , INFORMATION Device BC556B BC556BRL1 BC556BZL1 BC557, A BC557AZL1 Unit °C/W °C/W BC557B BC557BRL1 TO­92 TO , , BC557, A, B, C, BC558B, C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted 		ON Semiconductor
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transistor IC 557B BC557 bc556 bc558b transistor BC557C/558C APPLICATION OF BC557 transistor BC558BRL

BC558A

Abstract: BC556, A, B, BC557, A, B, C BC558, A, B, C PNP SILICON PLANAR EPITAXIAL TRANSISTORS TO , VCBO VEBO IC ICM IBM IEM PD BC556 65 80 80 Derate Above 25ºC BC557 45 50 50 5 , BC556 >65 >80 Collector Cut Off Current ICES VCE=80V, VBE=0 , Page 1 of 5 ÂuA ÂuA BC556, A, B, BC557, A, B, C BC558, A, B, C PNP SILICON PLANAR EPITAXIAL , IC=2mA, VCE=5V BC556 BC557/558 A B C Collector Emitter Saturation Voltage VCE (sat 		Continental Device India
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BC557A

Abstract: BC557 MOTOROLA mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 - - - - - - ­2.0 ­2.0 ­2.0 - - - ­100 ­100 ­100 ­4.0 ­4.0 , , VCE = ­5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 - - 220 330 		Motorola
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BC557 MOTOROLA BC 557 PNP TRANSISTOR circuits BC558 motorola transistor BC 557B 226AA

BC556B

Abstract: BC557A ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , , f = 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B 		Motorola
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transistor BC 557 BC556 Motorola

transistor BC 557B

Abstract: BC557A ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B 		Motorola
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557B 558B transistor bc 556 datasheet transistor bc 556 t2 BC558 transistors BC 557

T2 BC558 TRANSISTOR

Abstract: BC55x Emitter Voltage Value VCEO BC556 BC557 BC558 Collector - Base Voltage Vdc 3 EMITTER -65 -45 -30 VCBO BC556 BC557 BC558 Emitter - Base Voltage 2 BASE Unit Vdc -80 -50 , Current (VCES = -40 V) (VCES = -20 V) (VCES = -20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 nA mA ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = 		ON Semiconductor
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BC55x BC557AZL1G CBC557 CBC556

bc557

Abstract: BC557A ­20 V, TA = 125°C) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ICES BC556 BC557 BC558 BC556 BC557 BC558 Motorola , BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector ­ Emitter , Current ­ Gain - Bandwidth Product (IC = ­10 mA, VCE = ­5.0 V, f = 100 MHz) fT BC556 BC557 BC558 , 1.0 kHz) Cob MHz NF BC556 BC557 BC558 dB hfe BC556 BC557/558 BC557A BC556B/557B 		Motorola
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BC556B MOTOROLA

pin configuration pnp transistor BC557

Abstract: transistor IC 557B : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 BC557, 557B , BC557, 557B General Purpose Transistor Features: · PNP Silicon Planar Epitaxial Transistors. · , hFE IC = 10uA, VCE = 5V IC = 2mA, VCE = 5V IC = 100mA, VCE = 5V Page 2 BC557B BC557 BC557B BC557B Unit V 31/05/05 V1.0 BC557, 557B General Purpose Transistor Electrical , 8.5 K Voltage Feedback Ratio hre IC = 2mA, VCE = 5V - 557B Typical 2.0 X10-4 Out 		Multicomp
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transistor c 557B c 557b transistors 557b Transistor bc557b

BC557B-BULK

Abstract: BC557A-BULK and B, however, the types BC557 and BC558 can be supplied in all three groups. As complementary types , manufactured in the pin configuration TO-18. C 1 2 B 1 18979 2 3 E 3 Mechanical Data Case: TO , Parameter Collector - base voltage Test condition Part BC556 BC557 BC558 Collector - emitter voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter - base voltage Collector current Peak collector current Peak base , , Tj = 125 °C - VCE = 30 V, Tj = 125 °C BC556 BC557 BC558 BC556 BC557 BC558 Part Symbol hre hre hFE hFE 		Vishay Semiconductors
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BC557A-BULK BC557A-TAP BC557B-BULK BC557B-TAP BC546-BC548 bc557cb bc546bc BC546 BC548 BC556A-BULK BC556A-TAP BC556B-BULK BC556B-TAP
Abstract: available in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. As , transistors are also manufactured in the pin configuration TO-18. C 1 2 B 1 2 3 E 3 18979 , otherwise specified Parameter Test condition Symbol Value Unit - VCBO 80 V BC557 , - VCBO 30 V BC556 - VCES 80 V BC557 - VCES 50 V BC558 - VCES 30 V BC556 - VCEO 65 V BC557 - VCEO 45 V BC558 - VCEO 30 V Vishay Semiconductors
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BC557C-BULK BC557C-TAP BC558A-BULK BC558A-TAP BC558B-BULK BC558B-TAP

ICE1HS01G

Abstract: TRANSISTOR D206 resistor RFMIN, connected from FMIN pin to GND, determines the current (IFMIN) flowing out of FMIN pin , current flowing out of FMIN pin, which is discussed in the product datasheet [1]. Figure 4. Minimum , converter using LLC controller ICE1HS01G, which is an 8-pin LLC controller developed by Infineon , TV, AC/DC adapter and Audio system. ICE1HS01G is an 8-pin controller IC, the PCB layout can be , resonant converter, operating in zero voltage switching mode. The controller ICE1HS01G is an 8 pin LLC 		Infineon Technologies
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EVALHS-200W-ICE1HS01G TRANSISTOR D206 24V 5A SMPS circuit diagram LLC resonant transformer core pc47 SMPS CIRCUIT DIAGRAM 24v transistor NPN c115 E16/8/5 1XAWG28

BC557 vishay

Abstract: available in groups A and B, however, the types BC557 and BC558 can be supplied in all three groups. As , are also manufactured in the pin configuration TO-18. 2 B 1 2 3 C 1 18979 E 3 Mechanical , specified Parameter Collector - base voltage Test condition Part BC556 BC557 BC558 Collector - emitter voltage BC556 BC557 BC558 Symbol - VCBO - VCBO - VCBO - VCBO - VCES - VCES - VCES - VCES - VCEO - VCEO - , = 30 V - VCE = 80 V, Tj = 125 °C - VCE = 50 V, Tj = 125 °C - VCE = 30 V, Tj = 125 °C BC556 BC557 		Vishay Semiconductors
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BC557 vishay 88/540/EEC 91/690/EEC D-74025

BC5578

Abstract: transistor Bc 557 Device India Limited ICES BC557 45 50 50 5.0 100 200 200 200 500 4.0 -65 to +150 150 250 UNITS V V V V mA mA mA mA mW mW/deg C deg C deg C deg C/W BC557 BC558 >45 , Gain A typ150 B typ270 C IC=2mA,VCE=5V 75-475 BC556 75-800 BC557,8 110-220 A 200-450 B , Feedback Ratio hre IC=2mA, VCE=5V Out put Adimttance hoe IC=2mA, VCE=5V Continental , in mm. C H PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR MIN. MAX. A 3 2 1 		Continental Device India
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BC5578 transistor bc 557 datasheet transistor bc 558 pnp C 557 transistor bc 558 application ic 558
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